Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates

Daniel Feezell, James Speck, Steven DenBaars, and Shuji Nakamura
Materials Department, University of California, Santa Barbara, CA 93106-9560
*Email: feezell@engineering.ucsb.edu; Tel: +1-805-893-4362

Keywords: GaN, light-emitting diode, laser diode, nonpolar, semipolar


Recently, considerable research effort has been applied to the development of optoelectronic devices on nonpolar and semipolar free-standing GaN substrates. The major driving force behind this effort is the realization of laser diodes (LDs) and light-emitting diodes (LEDs) with improved optical efficiency, particularly in the violet, blue, and green spectral regions. The principle markets for these sources include data storage, projection displays, and general lighting. We present a summary of materials and device development for LDs and LEDs grown on several orientations of nonpolar and semipolar free-standing GaN. The novel crystal orientations explored in this work result in devices that may offer several performance benefits over conventional c-plane (polar) technology.

Paper 11a.2.pdf