Growth of GaN, AlGaN and AlN Layers for LED Manufacturing: Investigations on Growth Conditions using a “Hotwall” MOCVD System

R.Schreiner1, D.Fahle2, B.Schineller1, D.Brien1, H.Kalisch2, M.Heuken1, 2, A.Vescan2, G.Strauch1
1 AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Germany
2 GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

Keywords: MOCVD, Hot Ceiling, Hotwall Reactor, Vertical Temperature Profile


We report on a new planetary hotwall research system independently from each other heating the ceiling and the susceptor. Therefore, the influence of an actively controlled ceiling during an MOCVD process can be investigated. At maintained constant susceptor surface temperature, it was found that the temperature profile across the substrate becomes more uniform by increasing the ceiling temperature. Furthermore, the deposition profiles for GaN-related materials and AlN demonstrate a higher maximum where the gas flow hits the wafer
area as well as the coating on the ceiling changes from a solid to a flaky deposition when raising the ceiling temperature above the susceptor temperature.

Paper 13.14.pdf