A Comprehensive Correlation between Lattice Strain and Quantum Well Thickness of MBE Grown AlGaAs/InGaAs/GaAs Pseudomorphic HEMT with Device Performance for Transconductance and Linearity

Partha Mukhopadhyay1 (Member, IEEE), Palash Das1, Saptarshi Pathak1, Edward Y. Chang2 (Senior Member,
IEEE) and Dhrubes Biswas1 (Senior Member, IEEE)
1Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology – Kharagpur, India
2Department of Material Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
partha@ece.iitkgp.ernet.in, Ph: +91-9434502268

KEYWORDS: PHEMT, lattice mismatch, critical thickness, mobility, sheet concentration, gm


Molecular Beam Epitaxy (MBE) grown quantum well (QW) based InGaAs/AlGaAs/GaAs modulation doped heterostructure devices have been studied as an insight to epitaxial growth physics. Analysis of the pre-process characterization data reveals the strain in structure with respect to the varying QW thickness and extends to the bandgap energy discrepancy. Detailed physics based explanation has been presented for mobility and carrier concentration variations in terms of crystallographic aspects. The postprocess device data through ATLAS, SILVACO simulation for output saturation current (ID), and transconductance (gm) correlation has been analyzed for prediction of the impact on device performances.

Paper 13.17.pdf