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  • A. Chevtchenko, S.

    Ferdinand-Braun-Institut

    • Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs

      S. A. Chevtchenko, Ferdinand-Braun-Institut
      P. Kurpas, Ferdinand-Braun-Institut
      N. Chaturvedi, Ferdinand-Braun-Institut

  • A. del Alamo, Jesús

    MIT

    • The High‐Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospect

      Jesús A. del Alamo, MIT

  • Alvarez, Brian

    Skyworks Solutions, Inc.

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Aulnette, Cecile

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Bahouth, Fadi

    RFMD

    • Reducing Broken Thinned GaAs Wafers During Backside Processing

      Fadi Bahouth, RFMD

  • Baker, Greg

    TriQuint Semiconductor, TX

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Banbrook, Hal

    • Balancing Electrical and Thermal Device Characteristics: Thru Wafer Vias vs. Backside Thermal Vias

      Cristian Cismaru, Skyworks Solutions, Inc.
      Hal Banbrook

  • Beene, David

    TriQuint Semiconductor, TX

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Beene, Jerry

    TriQuint Semiconductor,TX

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Berger, Otto

     TriQuint Semiconductor

    • 3G/4G Requirements for Wireless Systems and the Role GaAs and GaN

      Otto Berger,  TriQuint Semiconductor

  • Bernardoni. N. Delmonte, M.

    University of Parma, Italy

    • Modeling of the Impact of Boundary Conditions on AlGaN/GaN HEMT Self Heating

      M. Bernardoni. N. Delmonte, University of Parma, Italy
      R. Menozzi, University of Parma, Italy

  • Bhatia, Pavan

     Brewer Science, TriQuint Semiconductor

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Bingle, Richard

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Biswas, Dhrubes

    Indian Institute of Technology

    • Perspectives, Opportunities and Future of Compound Semiconductor Technologies in India

      Dhrubes Biswas, Indian Institute of Technology

  • Bock, Karlheinz

    • Modular Solid State Technologies for a Multi-functional System Integration

      Karlheinz Bock

  • Bourdelle, Konstantin

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Bratschun, Alan

    Avago Technologies

    • A Study of Implant Damage and Isolation Properties in an InGaP HBT Process

      Alan Bratschun, Avago Technologies
      Martin J. Brophy, Avago Technologies

  • Bronner, W.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Brown, Jerry

    TriQuint Semiconductor, TX

    • Optimization and Characterization of a Photo Definable BCB for HV3S and HVHBT Technologies

      Jerry Brown, TriQuint Semiconductor, TX
      Amy Zhou, TriQuint Semiconductor, TX

  • Burke, Erich

    RFMD

    • Waste Minimization, Pollution Prevention and Resource Recovery at a GaAs Manufacturer

      Erich Burke, RFMD

  • Campbell, Jan

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Carlson, E.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Chang, Chun-Hsiang

    National Taiwan University

    • Investigation of Low-Temperature Optical Characteristics of InGaN/GaN Based Nanorod Light Emitting Arrays

      Chun-Hsiang Chang, National Taiwan University
      Liang-Yi Chen, National Taiwan University
      Ying-Yuan Huang, National Taiwan University

  • Chaturvedi, N.

    Ferdinand-Braun-Institut

    • Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs

      S. A. Chevtchenko, Ferdinand-Braun-Institut
      P. Kurpas, Ferdinand-Braun-Institut
      N. Chaturvedi, Ferdinand-Braun-Institut

  • Chen, Chao-Hong

    WIN Semiconductors Corp.

    • 6 Inch 0.1μm GaAs pHEMT Technology for E/V Band Application

      His-Tsung Lin, WIN Semiconductors Corp.
      Chao-Hong Chen, WIN Semiconductors Corp.
      Shih-Chun Lee, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.

  • Chen, Fu-Nung

    WIN Semiconductors Corp

    • The Demonstration of Enhancement/Depletion-Mode pHEMT Technology with Optimized E-mode Characteristics for Better Yield

      Jhih-Han Du, WIN Semiconductors Corp
      Fu-Nung Chen, WIN Semiconductors Corp
      David Wu, WIN Semiconductors Corp
      Kang-Lin Peng, WIN Semiconductors Corp
      Chen-An Hsieh, WIN Semiconductors Corp
      Tsung-Jung Yeh, WIN Semiconductors Corp

  • Chen, Hsiang

    National Chi Nan University

    • Characterizing Reverse-bias Electroluminescence of InGaN/GaN LEDs

      Hsiang Chen, National Chi Nan University
      Chuan-Haur Kao, National Chi Nan University
      Tien-Chang Lu, National Chi Nan University

  • Chen, Huatang

    TriQuint Semiconductor, TX

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

  • Chen, J.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Chen, Liang-Yi

    National Taiwan University

    • Investigation of Low-Temperature Optical Characteristics of InGaN/GaN Based Nanorod Light Emitting Arrays

      Chun-Hsiang Chang, National Taiwan University
      Liang-Yi Chen, National Taiwan University
      Ying-Yuan Huang, National Taiwan University

  • Chen, M.

    Global Communication Semiconductors, LLC

    • Process Control Improvements for Critical PECVD SiNx Thin Films

      F. Monzon, Global Communication Semiconductors, LLC
      F. Li, Global Communication Semiconductors, LLC
      D. Wolfe, Global Communication Semiconductors, LLC
      T. Dang, Global Communication Semiconductors, LLC
      M. Chen, Global Communication Semiconductors, LLC

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Chen, P.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Cheng, Kezia

    Skyworks Solutions Inc.

    • Electron Radiation as an Indicator of Gold Nodule Defect during E-beam Evaporation

      Kezia Cheng, Skyworks Solutions Inc.

  • Cho, I-Te

    WIN Semiconductors Corp.

    • 6 Inch 0.1μm GaAs pHEMT Technology for E/V Band Application

      His-Tsung Lin, WIN Semiconductors Corp.
      Chao-Hong Chen, WIN Semiconductors Corp.
      Shih-Chun Lee, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.

  • Christou, A.

    • Failure Modes and Effects Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Devices Degradation Mechanisms

      Shahrzad Salemi, University of Maryland
      A. Christou

  • Chung, G.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Chung, Jinwook

    MIT

    • The Best Material for the Function: Seamless On-Wafer Integration of GaN and Si Devices

      Hyung-Seok Lee, MIT
      Kevin Ryu, MIT
      Jinwook Chung, MIT

  • Cismaru, Cristian

    Skyworks Solutions, Inc.

    • Balancing Electrical and Thermal Device Characteristics: Thru Wafer Vias vs. Backside Thermal Vias

      Cristian Cismaru, Skyworks Solutions, Inc.
      Hal Banbrook

  • Clausen, Mike

    PETEC

    • Introduction to the PETEC Flexible Electronics Centre and Technology Challenges

      Mike Clausen, PETEC
      Bela Green, PETEC
      Martin Walkinshaw, PETEC
      Simon Ogier, PETEC

  • Cobo, Rick

    TriQuint Semiconductor, TX

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Crites, J.

    Skyworks Solutions Inc.

    • Relocation of Cobham’s MMIC Wafer Fab

      M. Drinkwine, Cobham
      J. Crites, Skyworks Solutions Inc.

  • D. Albrecht, John

    Defense Advanced Research Projects Agency

    • THz Electronics: Transistors, TMICs, and High Power Amplifiers

      John D. Albrecht, Defense Advanced Research Projects Agency

  • D. Dupuis, Russell

    Georgia Institute of Technology, Atlanta, GA

    • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Yi-Che Lee, Georgia Institute of Technology
      Zachary Lochner, Georgia Institute of Technology
      Hee Jin Kim, Lumileds LLC
      Jae-Hyun Ryou, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

  • Dai, Peter

    Skyworks Solution, Inc.

    • Plasma Etch Induced Surface Damage and its Impacts on GaAs Schottky Diodes

      Hong Shen
      Peter Dai, Skyworks Solution, Inc.

  • Dammann, M.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Dang, T.

    Global Communication Semiconductors, LLC

    • Process Control Improvements for Critical PECVD SiNx Thin Films

      F. Monzon, Global Communication Semiconductors, LLC
      F. Li, Global Communication Semiconductors, LLC
      D. Wolfe, Global Communication Semiconductors, LLC
      T. Dang, Global Communication Semiconductors, LLC
      M. Chen, Global Communication Semiconductors, LLC

  • Daval, Nicolas

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • DenBaars, Steven

    UCSB

    • Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates

      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      James Speck, UCSB
      Steven DenBaars, UCSB

  • Dennler, Ph.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Doria, Joshua

    Skyworks Solutions, Inc.

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Drachev, R.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Drinkwine, M.

    Cobham

    • Relocation of Cobham’s MMIC Wafer Fab

      M. Drinkwine, Cobham
      J. Crites, Skyworks Solutions Inc.

  • Du, Jhih-Han

    WIN Semiconductors Corp

    • The Demonstration of Enhancement/Depletion-Mode pHEMT Technology with Optimized E-mode Characteristics for Better Yield

      Jhih-Han Du, WIN Semiconductors Corp
      Fu-Nung Chen, WIN Semiconductors Corp
      David Wu, WIN Semiconductors Corp
      Kang-Lin Peng, WIN Semiconductors Corp
      Chen-An Hsieh, WIN Semiconductors Corp
      Tsung-Jung Yeh, WIN Semiconductors Corp

  • Dungan, Tom

    Avago Technologies

    • Characterization of BCB Planarization of Isolated and Dense Features in a High-Topography HBT Process

      Tom Dungan, Avago Technologies

  • Ebrahimi, Nercy

    Skyworks Solution Inc.

    • Plating Showerhead System for Improved Backside Wafer Plating

      Jens Riege, Skyworks Solutions, Inc.
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

    • A New Method for Creating Sloped Resist Profiles Using Mask Structures

      Jens Riege, Skyworks Solutions, Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

  • Evertsen, Rogier

    ALSI

    • Backside Processing Steps Elimination and Cost Reduction by Multi Beam Full Cut Laser Dicing

      Rogier Evertsen, ALSI
      Rene Hendriks, ALSI

  • Faili, Firooz

    Element Six Technologies, Santa Clara, CA

    • Material Studies of GaN on Diamond

      Sergey Zaitsev, Group4 Labs, Inc.
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Firooz Faili, Element Six Technologies, Santa Clara, CA

  • Feezell, Daniel

    Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico

    • Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates

      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      James Speck, UCSB
      Steven DenBaars, UCSB

  • Fong, D.

    UCLA

    • Engineered Substrates: Alternative Technologies using Materials Integration

      M.S. Goorsky, University of California, Los Angeles, CA USA
      M. Jackson, UCLA
      M. Joshi, UCLA
      C. Ventosa, UCLA
      X. Kuo, UCLA
      D. Fong, UCLA

  • Francis, Daniel

    Akash Systems, San Francisco, CA, USA

    • Material Studies of GaN on Diamond

      Sergey Zaitsev, Group4 Labs, Inc.
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Firooz Faili, Element Six Technologies, Santa Clara, CA

  • Friedrichs, Peter

    Infineon Technologies, Neubiberg, Germany

    • SiC Power Devices – Lessons Learned and Prospects After 10 Years of Commercial Availability

      Peter Friedrichs, Infineon Technologies, Neubiberg, Germany

  • Gao, Xiang

    IQE RF LLC

    • A Statistical Study of AlGaN/GaN HEMT Uniformity with Various Buffer and Barrier Structures

      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Songponn Vatanapradit, IQE RF LLC
      Ming Pan, Veeco Instruments

  • Gibbon, John

    Qorvo

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

  • Goorsky, M.S.

    University of California, Los Angeles, CA USA

    • Engineered Substrates: Alternative Technologies using Materials Integration

      M.S. Goorsky, University of California, Los Angeles, CA USA
      M. Jackson, UCLA
      M. Joshi, UCLA
      C. Ventosa, UCLA
      X. Kuo, UCLA
      D. Fong, UCLA

  • Gorka, Daniel

    IQE RF LLC

    • A Statistical Study of AlGaN/GaN HEMT Uniformity with Various Buffer and Barrier Structures

      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Songponn Vatanapradit, IQE RF LLC
      Ming Pan, Veeco Instruments

  • Green, Bela

    PETEC

    • Introduction to the PETEC Flexible Electronics Centre and Technology Challenges

      Mike Clausen, PETEC
      Bela Green, PETEC
      Martin Walkinshaw, PETEC
      Simon Ogier, PETEC

  • Halvorson, James

    TriQuint Semiconductor, TX

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

  • Hansen, D.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • He, Qizhi

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

  • Head, Gary

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • Hendriks, Rene

    ALSI

    • Backside Processing Steps Elimination and Cost Reduction by Multi Beam Full Cut Laser Dicing

      Rogier Evertsen, ALSI
      Rene Hendriks, ALSI

  • Hirose, M.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Holzman, David

    Skyworks Solutions, Inc.

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Hong, Bing-San

    WIN Semiconductors Corp.

    • The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance

      Szu-Ju Li, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Bing-San Hong, WIN Semiconductors Corp.
      Dennis William, WIN Semiconductors Corp.

  • Hou, D.

    Global Communication Semiconductors, LLC

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Hsieh, Chen-An

    WIN Semiconductors Corp

    • The Demonstration of Enhancement/Depletion-Mode pHEMT Technology with Optimized E-mode Characteristics for Better Yield

      Jhih-Han Du, WIN Semiconductors Corp
      Fu-Nung Chen, WIN Semiconductors Corp
      David Wu, WIN Semiconductors Corp
      Kang-Lin Peng, WIN Semiconductors Corp
      Chen-An Hsieh, WIN Semiconductors Corp
      Tsung-Jung Yeh, WIN Semiconductors Corp

  • Huang, Ying-Yuan

    National Taiwan University

    • Investigation of Low-Temperature Optical Characteristics of InGaN/GaN Based Nanorod Light Emitting Arrays

      Chun-Hsiang Chang, National Taiwan University
      Liang-Yi Chen, National Taiwan University
      Ying-Yuan Huang, National Taiwan University

  • Ivie, Martin

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

    • Implementation of Value Added Kaizens (VAK) in a GaAs Manufacturing Facility

      Jan Campbell
      Rick Cobo, TriQuint Semiconductor, TX
      David Beene, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Gary Head
      Martin Ivie
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Greg Baker, TriQuint Semiconductor, TX

  • J. Brophy, Martin

    Avago Technologies

    • A Study of Implant Damage and Isolation Properties in an InGaP HBT Process

      Alan Bratschun, Avago Technologies
      Martin J. Brophy, Avago Technologies

  • Jackson, M.

    UCLA

    • Engineered Substrates: Alternative Technologies using Materials Integration

      M.S. Goorsky, University of California, Los Angeles, CA USA
      M. Jackson, UCLA
      M. Joshi, UCLA
      C. Ventosa, UCLA
      X. Kuo, UCLA
      D. Fong, UCLA

  • Jin Kim, Hee

    Lumileds LLC

    • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Yi-Che Lee, Georgia Institute of Technology
      Zachary Lochner, Georgia Institute of Technology
      Hee Jin Kim, Lumileds LLC
      Jae-Hyun Ryou, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

  • Jitty Gu, Chunzhi

    Evans Analytical Group

    • Rapid Characterization of Vertical Threading Dislocations in GaN Using Dedicated Scanning Transmission Electron Microscopy

      Chunzhi Jitty Gu, Evans Analytical Group
      Mike Salmon, Evans Analytical Group
      Jim Vitarelli, Evans Analytical Group

  • Joshi, M.

    UCLA

    • Engineered Substrates: Alternative Technologies using Materials Integration

      M.S. Goorsky, University of California, Los Angeles, CA USA
      M. Jackson, UCLA
      M. Joshi, UCLA
      C. Ventosa, UCLA
      X. Kuo, UCLA
      D. Fong, UCLA

  • K. Das, Mrinal

    Cree

    • Commercially Available Cree Silicon Carbide Power Devices: Historical Success of JBS Diodes and Future Power Switch Prospects

      Mrinal K. Das, Cree

  • Kao, Chuan-Haur

    National Chi Nan University

    • Characterizing Reverse-bias Electroluminescence of InGaN/GaN LEDs

      Hsiang Chen, National Chi Nan University
      Chuan-Haur Kao, National Chi Nan University
      Tien-Chang Lu, National Chi Nan University

  • Kawasaki, H.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Kelly, Dylan

    Peregrine Semiconductor

    • The Golden Age of Mobile Wireless

      Dylan Kelly, Peregrine Semiconductor
      Duncan Pilgrim, Peregrine Semiconductor

  • Ketterson, Andrew

    Qorvo Inc.

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

  • Kiefer, R.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • King, Marcus

    TriQuint Semiconductor, TX

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

  • Knoedler, Heather

    Skyworks Solutions

    • Plating Showerhead System for Improved Backside Wafer Plating

      Jens Riege, Skyworks Solutions, Inc.
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

    • Collector Contact Optimization in GaAs HBT Manufacturing

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.

  • Kumar, D.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Kuo, X.

    UCLA

    • Engineered Substrates: Alternative Technologies using Materials Integration

      M.S. Goorsky, University of California, Los Angeles, CA USA
      M. Jackson, UCLA
      M. Joshi, UCLA
      C. Ventosa, UCLA
      X. Kuo, UCLA
      D. Fong, UCLA

  • Kurpas, P.

    Ferdinand-Braun-Institut

    • Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs

      S. A. Chevtchenko, Ferdinand-Braun-Institut
      P. Kurpas, Ferdinand-Braun-Institut
      N. Chaturvedi, Ferdinand-Braun-Institut

  • Lao, P.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Lee, Hyung-Seok

    MIT

    • The Best Material for the Function: Seamless On-Wafer Integration of GaN and Si Devices

      Hyung-Seok Lee, MIT
      Kevin Ryu, MIT
      Jinwook Chung, MIT

  • Lee, Shih-Chun

    WIN Semiconductors Corp.

    • 6 Inch 0.1μm GaAs pHEMT Technology for E/V Band Application

      His-Tsung Lin, WIN Semiconductors Corp.
      Chao-Hong Chen, WIN Semiconductors Corp.
      Shih-Chun Lee, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.

  • Lee, Yi-Che

    Georgia Institute of Technology

    • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Yi-Che Lee, Georgia Institute of Technology
      Zachary Lochner, Georgia Institute of Technology
      Hee Jin Kim, Lumileds LLC
      Jae-Hyun Ryou, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

  • Letertre, Fabrice

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Li, F.

    Global Communication Semiconductors, LLC

    • Process Control Improvements for Critical PECVD SiNx Thin Films

      F. Monzon, Global Communication Semiconductors, LLC
      F. Li, Global Communication Semiconductors, LLC
      D. Wolfe, Global Communication Semiconductors, LLC
      T. Dang, Global Communication Semiconductors, LLC
      M. Chen, Global Communication Semiconductors, LLC

  • Li, Szu-Ju

    WIN Semiconductors Corp.

    • The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance

      Szu-Ju Li, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Bing-San Hong, WIN Semiconductors Corp.
      Dennis William, WIN Semiconductors Corp.

  • Lin, Cheng-Kuo

    WIN Semiconductors Corp

    • The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance

      Szu-Ju Li, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Bing-San Hong, WIN Semiconductors Corp.
      Dennis William, WIN Semiconductors Corp.

  • Lin, His-Tsung

    WIN Semiconductors Corp.

    • 6 Inch 0.1μm GaAs pHEMT Technology for E/V Band Application

      His-Tsung Lin, WIN Semiconductors Corp.
      Chao-Hong Chen, WIN Semiconductors Corp.
      Shih-Chun Lee, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.

  • Loboda, M.J.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Lochner, Zachary

    Georgia Institute of Technology

    • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Yi-Che Lee, Georgia Institute of Technology
      Zachary Lochner, Georgia Institute of Technology
      Hee Jin Kim, Lumileds LLC
      Jae-Hyun Ryou, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

  • Lowe, Frank

    Akash Systems, San Francisco, CA, USA

    • Material Studies of GaN on Diamond

      Sergey Zaitsev, Group4 Labs, Inc.
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Firooz Faili, Element Six Technologies, Santa Clara, CA

  • Lu, Tien-Chang

    National Chi Nan University

    • Characterizing Reverse-bias Electroluminescence of InGaN/GaN LEDs

      Hsiang Chen, National Chi Nan University
      Chuan-Haur Kao, National Chi Nan University
      Tien-Chang Lu, National Chi Nan University

  • Lupo, Darrel

    TriQuint Semiconductor,TX

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

  • Luu, Lam

    Skyworks Solutions, Inc.

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Luu-Henderson, Lam

    Skyworks Solutions Inc.

    • Collector Contact Optimization in GaAs HBT Manufacturing

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.

  • Mackenzie, K.

    Plasma-Therm LLC,

    • Improving Corrosion Resistance of Plasma Etch Reactors Testing Anodize Coatings and Cleaning Methods

      K. Mackenzie, Plasma-Therm LLC,
      K. Pizzo, Plasma‐Therm
      E. Scott, Plasma‐Therm

  • Maleville, Christophe

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Matsushita, K.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Mazure, Carlos

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Meguro, Takeshi

    Hitachi Cable

    • Role of Buffer Layers of High Power GaAs MESFETs for Higher Output Power

      Junichiro Takeda, Hitachi Cable
      Yohei Otoki, SCIOCS
      Tadayoshi Tsuchiya, Hitachi Cable
      Takeshi Meguro, Hitachi Cable
      Yukio Sasaki, Hitachi Cable

  • Menozzi, R.

    University of Parma, Italy

    • Modeling of the Impact of Boundary Conditions on AlGaN/GaN HEMT Self Heating

      M. Bernardoni. N. Delmonte, University of Parma, Italy
      R. Menozzi, University of Parma, Italy

  • Mikulla, M.

    Fraunhofer Institute

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Milam, Vicki

    TriQuint Semiconductor, TX

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

  • Mitsunaga, Masahiro

    Sony Semiconductor

    • Integration of E-Mode P-Channel JFET into GaAs E/D-Mode JPHEMT Technology for Multi-Band/Mode Antenna Switch Application

      Masahiro Mitsunaga, Sony Semiconductor
      Shinichi Tamari, Sony Semiconductor

  • Mony, Samuel

    Skyworks Solutions, Inc.

    • A New Method for Creating Sloped Resist Profiles Using Mask Structures

      Jens Riege, Skyworks Solutions, Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

  • Monzon, F.

    Global Communication Semiconductors, LLC

    • Process Control Improvements for Critical PECVD SiNx Thin Films

      F. Monzon, Global Communication Semiconductors, LLC
      F. Li, Global Communication Semiconductors, LLC
      D. Wolfe, Global Communication Semiconductors, LLC
      T. Dang, Global Communication Semiconductors, LLC
      M. Chen, Global Communication Semiconductors, LLC

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Müller, S.

    Fraunhofer Institute

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Mußer, M.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Nakanishi, S.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Nappa, Dario

    TriQuint Semiconductor,TX

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

  • Nguyen, Bich-Yen

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Ogier, Simon

    PETEC

    • Introduction to the PETEC Flexible Electronics Centre and Technology Challenges

      Mike Clausen, PETEC
      Bela Green, PETEC
      Martin Walkinshaw, PETEC
      Simon Ogier, PETEC

  • Ooki, Mitsuhiro

    Sony Semiconductor

    • The Green Activity of Back Grinding Process

      Shinji Tsukino, Sony Semiconductor
      Norio Sakaguchi, Sony Semiconductor
      Seiji Tsunematsu, Sony Semiconductor
      Mitsuhiro Ooki, Sony Semiconductor
      Osamu Sakamoto, Sony Semiconductor

  • Otoki, Yohei

    SCIOCS

    • Role of Buffer Layers of High Power GaAs MESFETs for Higher Output Power

      Junichiro Takeda, Hitachi Cable
      Yohei Otoki, SCIOCS
      Tadayoshi Tsuchiya, Hitachi Cable
      Takeshi Meguro, Hitachi Cable
      Yukio Sasaki, Hitachi Cable

  • Pan, Ming

    Veeco Instruments

    • A Statistical Study of AlGaN/GaN HEMT Uniformity with Various Buffer and Barrier Structures

      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Songponn Vatanapradit, IQE RF LLC
      Ming Pan, Veeco Instruments

  • Peng, Kang-Lin

    WIN Semiconductors Corp

    • The Demonstration of Enhancement/Depletion-Mode pHEMT Technology with Optimized E-mode Characteristics for Better Yield

      Jhih-Han Du, WIN Semiconductors Corp
      Fu-Nung Chen, WIN Semiconductors Corp
      David Wu, WIN Semiconductors Corp
      Kang-Lin Peng, WIN Semiconductors Corp
      Chen-An Hsieh, WIN Semiconductors Corp
      Tsung-Jung Yeh, WIN Semiconductors Corp

  • Pengelly, Raymond

    Cree Inc.

    • Commercial GaN Devices for Switching and Low‐Noise Applications

      Raymond Pengelly, Cree Inc.
      Scott Sheppard, Wolfspeed | A Cree Company
      Thomas Smith, Cree Inc.
      Bill Pribble

  • Pepper, J.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Philippe Roussel, Dr.

    Yole Développement

    • Will GaN-on-Si Displace Si and SiC in Power Electronics?

      Dr. Philippe Roussel, Yole Développement

  • Pilgrim, Duncan

    Peregrine Semiconductor

    • The Golden Age of Mobile Wireless

      Dylan Kelly, Peregrine Semiconductor
      Duncan Pilgrim, Peregrine Semiconductor

  • Pizzo, K.

    Plasma‐Therm

    • Improving Corrosion Resistance of Plasma Etch Reactors Testing Anodize Coatings and Cleaning Methods

      K. Mackenzie, Plasma-Therm LLC,
      K. Pizzo, Plasma‐Therm
      E. Scott, Plasma‐Therm

  • Preble, E.A.

    Kyma Technologies, Inc.

    • Considerations towards a Nitride Semiconductor Substrate Roadmap

      E.A. Preble, Kyma Technologies, Inc.
      H.A. Splawn, Kyma Technologies, Inc.

  • Pribble, Bill

    • Commercial GaN Devices for Switching and Low‐Noise Applications

      Raymond Pengelly, Cree Inc.
      Scott Sheppard, Wolfspeed | A Cree Company
      Thomas Smith, Cree Inc.
      Bill Pribble

  • Quay, R.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • R. Hess, Ronald

    RFMD

    • Optimized PECVD Chamber Clean for Improved Film Deposition Capability

      Ronald R. Hess, RFMD

  • Riege, Jens

    Skyworks Solutions, Inc.

    • Plating Showerhead System for Improved Backside Wafer Plating

      Jens Riege, Skyworks Solutions, Inc.
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

    • A New Method for Creating Sloped Resist Profiles Using Mask Structures

      Jens Riege, Skyworks Solutions, Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

  • Ryou, Jae-Hyun

    Georgia Institute of Technology

    • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Yi-Che Lee, Georgia Institute of Technology
      Zachary Lochner, Georgia Institute of Technology
      Hee Jin Kim, Lumileds LLC
      Jae-Hyun Ryou, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

  • Ryu, Kevin

    MIT

    • The Best Material for the Function: Seamless On-Wafer Integration of GaN and Si Devices

      Hyung-Seok Lee, MIT
      Kevin Ryu, MIT
      Jinwook Chung, MIT

  • Sadaka, Mariam

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Sahota, Kamaru

    Qualcomm

    • RF Front End Component Requirements for Mobile LTE Terminals (Withdrawn)

      Kamaru Sahota, Qualcomm

  • Sakaguchi, Norio

    Sony Semiconductor

    • The Green Activity of Back Grinding Process

      Shinji Tsukino, Sony Semiconductor
      Norio Sakaguchi, Sony Semiconductor
      Seiji Tsunematsu, Sony Semiconductor
      Mitsuhiro Ooki, Sony Semiconductor
      Osamu Sakamoto, Sony Semiconductor

  • Sakamoto, Osamu

    Sony Semiconductor

    • The Green Activity of Back Grinding Process

      Shinji Tsukino, Sony Semiconductor
      Norio Sakaguchi, Sony Semiconductor
      Seiji Tsunematsu, Sony Semiconductor
      Mitsuhiro Ooki, Sony Semiconductor
      Osamu Sakamoto, Sony Semiconductor

  • Sakurai, H.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Salemi, Shahrzad

    University of Maryland

    • Failure Modes and Effects Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Devices Degradation Mechanisms

      Shahrzad Salemi, University of Maryland
      A. Christou

  • Salmon, Mike

    Evans Analytical Group

    • Rapid Characterization of Vertical Threading Dislocations in GaN Using Dedicated Scanning Transmission Electron Microscopy

      Chunzhi Jitty Gu, Evans Analytical Group
      Mike Salmon, Evans Analytical Group
      Jim Vitarelli, Evans Analytical Group

  • Salzman, Keith

    TriQuint Semiconductor, TX

    • Improved T-Gate Yield Using E-Beam Trilayer Resist Process

      Huatang Chen, TriQuint Semiconductor, TX
      Andrew Ketterson, Qorvo Inc.
      Marcus King, TriQuint Semiconductor, TX
      Keith Salzman, TriQuint Semiconductor, TX
      Vicki Milam, TriQuint Semiconductor, TX
      James Halvorson, TriQuint Semiconductor, TX
      Jan Campbell

  • Sanchez, E.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Sasaki, Yukio

    Hitachi Cable

    • Role of Buffer Layers of High Power GaAs MESFETs for Higher Output Power

      Junichiro Takeda, Hitachi Cable
      Yohei Otoki, SCIOCS
      Tadayoshi Tsuchiya, Hitachi Cable
      Takeshi Meguro, Hitachi Cable
      Yukio Sasaki, Hitachi Cable

  • Schwarzenbach, Walter

    SOITEC

    • Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications

      Bich-Yen Nguyen, SOITEC
      Mariam Sadaka, SOITEC
      Nicolas Daval, SOITEC
      Walter Schwarzenbach, SOITEC
      Cecile Aulnette, SOITEC
      Konstantin Bourdelle, SOITEC
      Fabrice Letertre, SOITEC
      Christophe Maleville, SOITEC
      Carlos Mazure, SOITEC

  • Scott, E.

    Plasma‐Therm

    • Improving Corrosion Resistance of Plasma Etch Reactors Testing Anodize Coatings and Cleaning Methods

      K. Mackenzie, Plasma-Therm LLC,
      K. Pizzo, Plasma‐Therm
      E. Scott, Plasma‐Therm

  • Shen, Hong

    • Plasma Etch Induced Surface Damage and its Impacts on GaAs Schottky Diodes

      Hong Shen
      Peter Dai, Skyworks Solution, Inc.

  • Sheppard, Scott

    Wolfspeed | A Cree Company

    • Commercial GaN Devices for Switching and Low‐Noise Applications

      Raymond Pengelly, Cree Inc.
      Scott Sheppard, Wolfspeed | A Cree Company
      Thomas Smith, Cree Inc.
      Bill Pribble

  • Shevenock, Steve

    Avago Technologies

    • Shuffle Up and Deal: the Use of Wafer Randomization as a Yield and Process Analysis Tool

      Albert Wang, Avago Technologies
      Mark Urfer, Avago Technologies
      Steve Shevenock, Avago Technologies

  • Smith, Thomas

    Cree Inc.

    • Commercial GaN Devices for Switching and Low‐Noise Applications

      Raymond Pengelly, Cree Inc.
      Scott Sheppard, Wolfspeed | A Cree Company
      Thomas Smith, Cree Inc.
      Bill Pribble

  • Speck, James

    UCSB

    • Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates

      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      James Speck, UCSB
      Steven DenBaars, UCSB

  • Splawn, H.A.

    Kyma Technologies, Inc.

    • Considerations towards a Nitride Semiconductor Substrate Roadmap

      E.A. Preble, Kyma Technologies, Inc.
      H.A. Splawn, Kyma Technologies, Inc.

  • Takada, Y.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Takagi, K.

    Toshiba Corp.

    • Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band

      K. Matsushita, Toshiba Corp.
      H. Sakurai, Toshiba Corp.
      S. Nakanishi, Toshiba Corp.
      K. Takagi, Toshiba Corp.
      H. Kawasaki, Toshiba Corp.
      Y. Takada, Toshiba Corp.
      M. Hirose, Toshiba Corp.

  • Takagi, Kazutaka

    Toshiba Corp.

    • A Difference of Thermal Design between GaN and GaAs

      Takuji Yamamura, Toshiba Corporation
      Kazutaka Takagi, Toshiba Corp.

  • Takeda, Junichiro

    Hitachi Cable

    • Role of Buffer Layers of High Power GaAs MESFETs for Higher Output Power

      Junichiro Takeda, Hitachi Cable
      Yohei Otoki, SCIOCS
      Tadayoshi Tsuchiya, Hitachi Cable
      Takeshi Meguro, Hitachi Cable
      Yukio Sasaki, Hitachi Cable

  • Tamari, Shinichi

    Sony Semiconductor

    • Integration of E-Mode P-Channel JFET into GaAs E/D-Mode JPHEMT Technology for Multi-Band/Mode Antenna Switch Application

      Masahiro Mitsunaga, Sony Semiconductor
      Shinichi Tamari, Sony Semiconductor

  • Teran, Jesus

    Skyworks Solutions, Inc.

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Tiku, Shiban

    Skyworks Solutions, Inc.

    • Plating Showerhead System for Improved Backside Wafer Plating

      Jens Riege, Skyworks Solutions, Inc.
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

    • Collector Contact Optimization in GaAs HBT Manufacturing

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.

  • Tran, P.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Tsai, Shu-Hsiao

    WIN Semiconductors Corp

    • The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance

      Szu-Ju Li, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Bing-San Hong, WIN Semiconductors Corp.
      Dennis William, WIN Semiconductors Corp.

  • Tsuchiya, Tadayoshi

    Hitachi Cable

    • Role of Buffer Layers of High Power GaAs MESFETs for Higher Output Power

      Junichiro Takeda, Hitachi Cable
      Yohei Otoki, SCIOCS
      Tadayoshi Tsuchiya, Hitachi Cable
      Takeshi Meguro, Hitachi Cable
      Yukio Sasaki, Hitachi Cable

  • Tsukino, Shinji

    Sony Semiconductor

    • The Green Activity of Back Grinding Process

      Shinji Tsukino, Sony Semiconductor
      Norio Sakaguchi, Sony Semiconductor
      Seiji Tsunematsu, Sony Semiconductor
      Mitsuhiro Ooki, Sony Semiconductor
      Osamu Sakamoto, Sony Semiconductor

  • Tsunematsu, Seiji

    Sony Semiconductor

    • The Green Activity of Back Grinding Process

      Shinji Tsukino, Sony Semiconductor
      Norio Sakaguchi, Sony Semiconductor
      Seiji Tsunematsu, Sony Semiconductor
      Mitsuhiro Ooki, Sony Semiconductor
      Osamu Sakamoto, Sony Semiconductor

  • Urfer, Mark

    Avago Technologies

    • Shuffle Up and Deal: the Use of Wafer Randomization as a Yield and Process Analysis Tool

      Albert Wang, Avago Technologies
      Mark Urfer, Avago Technologies
      Steve Shevenock, Avago Technologies

  • van Raay, F.

    Fraunhofer Institute for Applied Solid State Physics

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Vatanapradit, Songponn

    IQE RF LLC

    • A Statistical Study of AlGaN/GaN HEMT Uniformity with Various Buffer and Barrier Structures

      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Songponn Vatanapradit, IQE RF LLC
      Ming Pan, Veeco Instruments

  • Velasquez, Juan

    Skyworks Solutions

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

  • Ventosa, C.

    UCLA

    • Engineered Substrates: Alternative Technologies using Materials Integration

      M.S. Goorsky, University of California, Los Angeles, CA USA
      M. Jackson, UCLA
      M. Joshi, UCLA
      C. Ventosa, UCLA
      X. Kuo, UCLA
      D. Fong, UCLA

  • Vitarelli, Jim

    Evans Analytical Group

    • Rapid Characterization of Vertical Threading Dislocations in GaN Using Dedicated Scanning Transmission Electron Microscopy

      Chunzhi Jitty Gu, Evans Analytical Group
      Mike Salmon, Evans Analytical Group
      Jim Vitarelli, Evans Analytical Group

  • Walkinshaw, Martin

    PETEC

    • Introduction to the PETEC Flexible Electronics Centre and Technology Challenges

      Mike Clausen, PETEC
      Bela Green, PETEC
      Martin Walkinshaw, PETEC
      Simon Ogier, PETEC

  • Waltereit, P.

    Fraunhofer Institute

    • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

      W. Bronner, Fraunhofer Institute for Applied Solid State Physics
      P. Waltereit, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      M. Dammann, Fraunhofer Institute for Applied Solid State Physics
      R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
      Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
      F. van Raay, Fraunhofer Institute for Applied Solid State Physics
      M. Mußer, Fraunhofer Institute for Applied Solid State Physics
      R. Quay, Fraunhofer Institute for Applied Solid State Physics
      M. Mikulla, Fraunhofer Institute

  • Wan, J.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Wang, Albert

    Avago Technologies

    • Shuffle Up and Deal: the Use of Wafer Randomization as a Yield and Process Analysis Tool

      Albert Wang, Avago Technologies
      Mark Urfer, Avago Technologies
      Steve Shevenock, Avago Technologies

  • Wang, S.

    Global Communication Semiconductors, Inc.

    • Managing Process Diversity for Opto Wafer Fabrication in a Photonics Foundry

      S. Wang, Global Communication Semiconductors, Inc.
      F. Monzon, Global Communication Semiconductors, LLC
      P. Chen, Global Communication Semiconductors, Inc.
      J. Chen, Global Communication Semiconductors, Inc.
      D. Kumar, Global Communication Semiconductors, Inc.
      P. Lao, Global Communication Semiconductors, Inc.
      J. Pepper, Global Communication Semiconductors, Inc.
      P. Tran, Global Communication Semiconductors, Inc.
      M. Chen, Global Communication Semiconductors, LLC
      D. Hou, Global Communication Semiconductors, LLC

  • Weaver, Daniel

    • Overall Equipment Efficiency Improvement for GaAs Fab Evaporators

      Jesus Teran, Skyworks Solutions, Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Lam Luu, Skyworks Solutions, Inc.
      Richard Bingle
      Brian Alvarez, Skyworks Solutions, Inc.
      Joshua Doria, Skyworks Solutions, Inc.
      David Holzman, Skyworks Solutions, Inc.
      Juan Velasquez, Skyworks Solutions

    • Collector Contact Optimization in GaAs HBT Manufacturing

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Daniel Weaver
      Heather Knoedler, Skyworks Solutions
      Shiban Tiku, Skyworks Solutions, Inc.

  • Weimar, Andreas

    Osram

    • High Brightness LEDs: Manufacturing and Applications

      Andreas Weimar, Osram

  • William, Dennis

    WIN Semiconductors Corp.

    • The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance

      Szu-Ju Li, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Bing-San Hong, WIN Semiconductors Corp.
      Dennis William, WIN Semiconductors Corp.

  • Wolfe, D.

    Global Communication Semiconductors, LLC

    • Process Control Improvements for Critical PECVD SiNx Thin Films

      F. Monzon, Global Communication Semiconductors, LLC
      F. Li, Global Communication Semiconductors, LLC
      D. Wolfe, Global Communication Semiconductors, LLC
      T. Dang, Global Communication Semiconductors, LLC
      M. Chen, Global Communication Semiconductors, LLC

  • Wu, David

    WIN Semiconductors Corp

    • The Demonstration of Enhancement/Depletion-Mode pHEMT Technology with Optimized E-mode Characteristics for Better Yield

      Jhih-Han Du, WIN Semiconductors Corp
      Fu-Nung Chen, WIN Semiconductors Corp
      David Wu, WIN Semiconductors Corp
      Kang-Lin Peng, WIN Semiconductors Corp
      Chen-An Hsieh, WIN Semiconductors Corp
      Tsung-Jung Yeh, WIN Semiconductors Corp

  • Yamamura, Takuji

    Toshiba Corporation

    • A Difference of Thermal Design between GaN and GaAs

      Takuji Yamamura, Toshiba Corporation
      Kazutaka Takagi, Toshiba Corp.

  • Yang, Howie

    TriQuint Semiconductor,TX

    • The Use of a Structured Approach to Solve Yield Limiting Defects in a Compound Semiconductor Factory

      Jan Campbell
      Qizhi He
      Howie Yang, TriQuint Semiconductor,TX
      Martin Ivie
      John Gibbon, Qorvo
      Darrel Lupo, TriQuint Semiconductor,TX
      Dario Nappa, TriQuint Semiconductor,TX
      Jerry Beene, TriQuint Semiconductor,TX

  • Yeh, Tsung-Jung

    WIN Semiconductors Corp

    • The Demonstration of Enhancement/Depletion-Mode pHEMT Technology with Optimized E-mode Characteristics for Better Yield

      Jhih-Han Du, WIN Semiconductors Corp
      Fu-Nung Chen, WIN Semiconductors Corp
      David Wu, WIN Semiconductors Corp
      Kang-Lin Peng, WIN Semiconductors Corp
      Chen-An Hsieh, WIN Semiconductors Corp
      Tsung-Jung Yeh, WIN Semiconductors Corp

  • Young, Morris

    AXT, Inc

    • China’s Fast Growing Role in the Future of Compound Semiconductor Technology and Manufacturing

      Morris Young, AXT, Inc

  • Zaitsev, Sergey

    Group4 Labs, Inc.

    • Material Studies of GaN on Diamond

      Sergey Zaitsev, Group4 Labs, Inc.
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Firooz Faili, Element Six Technologies, Santa Clara, CA

  • Zhang, J.

    Dow Corning Corporation

    • Advances in SiC Substrates for Power and Energy Applications

      M.J. Loboda, Dow Corning Corporation
      G. Chung, Dow Corning Corporation
      E. Carlson, Dow Corning Corporation
      R. Drachev, Dow Corning Corporation
      D. Hansen, Dow Corning Corporation
      E. Sanchez, Dow Corning Corporation
      J. Wan, Dow Corning Corporation
      J. Zhang, Dow Corning Corporation

  • Zhang, Yun

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing

    • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Yi-Che Lee, Georgia Institute of Technology
      Zachary Lochner, Georgia Institute of Technology
      Hee Jin Kim, Lumileds LLC
      Jae-Hyun Ryou, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA

  • Zhou, Amy

    TriQuint Semiconductor, TX

    • Optimization and Characterization of a Photo Definable BCB for HV3S and HVHBT Technologies

      Jerry Brown, TriQuint Semiconductor, TX
      Amy Zhou, TriQuint Semiconductor, TX