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  • Williams, Dennis

    WIN Semiconductors Corp.

    • A Ultra High Ruggedness Performance of InGaP/GaAs HBT

      Chiou, WiN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp.

  • A. Briere, Michael

    ACOO Enterprises LLC

    • The Status of GaN based Power Device Development at International Rectifier

      Michael A. Briere, ACOO Enterprises LLC

  • Adams, J.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Aden, Steve

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Association, EPIC

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • AXT,

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Badawi, Hani

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Banerji, Pallab

    Indian Institute of Technology Kharagpur

    • Analytical and Simulative Viewpoint of Graded Barrier AlGaN/GaN HEMT for High Input Impedance, Breakdown Voltage and Channel mobility

      Palash Das, Indian Institute of Technology
      Pallab Banerji, Indian Institute of Technology Kharagpur
      Dhrubes Biswas, Indian Institute of Technology

  • Bass, R.

    Naval Research Laboratory

    • 40 nm T-Gate Process Development using ZEP Reflow

      D. J. Meyer
      B. P. Downey
      R. Bass, Naval Research Laboratory
      D. S. Katzer

  • Beene, Jerry

    TriQuint Semiconductor,TX

    • Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography

      Amy Zhou, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Marcus King, TriQuint Semiconductor, TX
      Ming-Yih Kao, Qorvo, Inc.
      Hua-Tang Chen, Qorvo, Inc.
      Chris Puckett, TriQuint Semiconductor

  • Benjamin, Mark

    Lehighton Electronics Inc,

    • Affect of Wafer Height and Bow on Eddy Current Sheet Resistance Measurements

      Mark Benjamin, Lehighton Electronics Inc,

  • Bergunde, Thomas

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Bernardoni, M.

    Department of Information Engineering, University of Parma

    • Empirical and Physical Modeling of Self-Heating in Power AlGaN/GaN HEMTs

      M. Bernardoni, Department of Information Engineering, University of Parma
      N. Delmonte, Department of Information Engineering, University of Parma
      R. Menozzi, University of Parma, Italy

  • Bernstein, Steven

    Raytheon Company

    • GaN Technology for Radars

      Colin S. Whelan, Raytheon Company
      Nicholas J. Kolias, Raytheon Company
      Steven Brierley, Raytheon Company
      Chris MacDonald, Raytheon Company
      Steven Bernstein, Raytheon Company

  • Bhatia, Pavan

     Brewer Science, TriQuint Semiconductor

    • Rework Reduction and Optimization of 150MM Wafer Mount Process

      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor

  • Biswas, Dhrubes

    Indian Institute of Technology

    • Analytical and Simulative Viewpoint of Graded Barrier AlGaN/GaN HEMT for High Input Impedance, Breakdown Voltage and Channel mobility

      Palash Das, Indian Institute of Technology
      Pallab Banerji, Indian Institute of Technology Kharagpur
      Dhrubes Biswas, Indian Institute of Technology

  • Black, W.T.

    RFMD

    • Repair and Maintenance in High-Volume MBE Production

      W.T. Black, RFMD

  • Brierley, Steven

    Raytheon Company

    • GaN Technology for Radars

      Colin S. Whelan, Raytheon Company
      Nicholas J. Kolias, Raytheon Company
      Steven Brierley, Raytheon Company
      Chris MacDonald, Raytheon Company
      Steven Bernstein, Raytheon Company

  • Campbell, Jan

    • ADHESION CHARACTERIZATION OF PHOTO-DEFINABLE EPOXIES ON HIGH ASPECT RATIO STRUCTURES FOR HIGH PERFORMANCE APPLICATIONS

      Jan Campbell
      Qizhi He

  • Chan, R.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Chang, Chih-Chuan

    WIN Semiconductors Corp.

    • 150 nm T-shape Gate Process Capacity Improvement

      Se-Jung Lee, WIN Semiconductors Corp.
      Chih-Chuan Chang, WIN Semiconductors Corp.

  • Chang, Kerry

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Chen, Hua-Tang

    Qorvo, Inc.

    • Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography

      Amy Zhou, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Marcus King, TriQuint Semiconductor, TX
      Ming-Yih Kao, Qorvo, Inc.
      Hua-Tang Chen, Qorvo, Inc.
      Chris Puckett, TriQuint Semiconductor

  • Chen, Minkar

    Global Communications Seminconductor, LLC

    • Methods for Removing TiOx Residue from Au Bond Pad

      Lena Luu, Global Communications Semiconductor, LLC
      Minkar Chen, Global Communications Seminconductor, LLC
      Frank Monzon, Global Communications Semiconductors, Inc.

  • Chen, Ping-Wei

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Chen, Young-Shying

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Chen a, Young-Shying

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Chen b, Gary

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Cheng, Kezia

    Skyworks Solutions Inc.

    • Improving Front Side Process Uniformity by Back-Side Metallization

      Kezia Cheng, Skyworks Solutions Inc.

  • Chiang, Summer

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Chin, Chen-Che

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Chiou,

    WiN Semiconductors Corp.

    • A Ultra High Ruggedness Performance of InGaP/GaAs HBT

      Chiou, WiN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp.

  • Chou, Tung-Yao

    WIN Semiconductors Corp.

    • A Ultra High Ruggedness Performance of InGaP/GaAs HBT

      Chiou, WiN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp.

  • Chu a, Kuan-Wei

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Chua, Fu-Chuan

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Chuang b, Patrick

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Compound Materials, Freiberger

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Cox, Keith

    Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

    • A New Single Wafer Cleaning Technology for Compound Semiconductor Manufacturing

      Richard Peters, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Spencer Hochstetler, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Keith Cox, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Palmer Holbrook, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

  • D. Mackenzie, Kenneth

    • High Throughput Stress-Controlled Silicon Nitride Deposition For Compound Semiconductor Device Manufacturing

      Kenneth D. Mackenzie
      Rohit Khanna, Plasma-Therm LLC

  • Das, Palash

    Indian Institute of Technology

    • Analytical and Simulative Viewpoint of Graded Barrier AlGaN/GaN HEMT for High Input Impedance, Breakdown Voltage and Channel mobility

      Palash Das, Indian Institute of Technology
      Pallab Banerji, Indian Institute of Technology Kharagpur
      Dhrubes Biswas, Indian Institute of Technology

  • Della-Morrow, Celicia

    TriQuint Semiconductor

    • Backside Via Process of GaN Device Fabrication

      Ju-Ai Ruan, Qorvo Inc.
      Craig Hall, Qorvo
      Celicia Della-Morrow, TriQuint Semiconductor
      Tom Nagle, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.

  • Delmonte, N.

    Department of Information Engineering, University of Parma

    • Empirical and Physical Modeling of Self-Heating in Power AlGaN/GaN HEMTs

      M. Bernardoni, Department of Information Engineering, University of Parma
      N. Delmonte, Department of Information Engineering, University of Parma
      R. Menozzi, University of Parma, Italy

  • Dimoulas, A.

    MBE Laboratory, NCSR DEMOKRITOS

    • Germanium and compound semiconductor manufacturing for advanced CMOS

      A. Dimoulas, MBE Laboratory, NCSR DEMOKRITOS

  • Donald Cheng, K.Y.

    University of Illinois at Urbana-Champaign

    • Non-Linearity Characterization of Submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs

      Huiming Xu, University of Illinois at Urbana-Champaign
      Eric Iverson, University of Illinois at Urbana-Champaign
      K.Y. Donald Cheng, University of Illinois at Urbana-Champaign

  • Downey, B. P.

    • 40 nm T-Gate Process Development using ZEP Reflow

      D. J. Meyer
      B. P. Downey
      R. Bass, Naval Research Laboratory
      D. S. Katzer

  • Duckham, Alan

    • PVD Magnetron Sputtering Parameters and their Effect on the Composition of AuSn Solder

      Heiner Lichtenberger*, * Materion Microelectronics and Services ** NEXX Systems
      Alan Duckham
      Steve Golovato**, * Materion Microelectronics and Services ** NEXX Systems

  • Eddy, C.R.

    • Profiling the Temperature Distribution in AlGaN/GaN HEMTs with Nanocrystalline Diamond Heat Spreading Layers

      C.R. Eddy

  • Eichler, Stefan

    Freiberger Compound Materials GmbH

    • Green Gallium Arsenide (GaAs) Substrate Manufacturing

      Stefan Eichler, Freiberger Compound Materials GmbH

  • Elarde, V.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Farmosa, Scott

    Skyworks Solutions

    • Successful GaAs Backend Process Improvement

      Scott Farmosa, Skyworks Solutions
      Jennifer Welborn, Skyworks Solutions
      Daniel Nercessian, Skyworks Solutions

  • Fender, Jason

    • A Call to Higher Quality in GaAs

      Jose Suarez
      Jason Fender

    • Method for Detecting GaAs Die Fractures in Device Manufacturing Through the Use of a Designed Test Vehicle

      Jason Fender
      Jose Suarez

  • Freitag, R.G.

    Northrop Grumman Electronic Systems

    • Low-Loss Metal-on-BCB Technology for Next-Generation GaN MMICs

      E.J. Stewart, Northrop Grumman Electronic Systems
      R.G. Freitag, Northrop Grumman Electronic Systems
      J. S. Mason, Northrop Grumman Mission Systems
      M.J. Walker, Northrop Grumman Electronic Systems
      H.G. Henry, Northrop Grumman Electronic Systems

  • Gao, Xiang

    IQE RF LLC

    • Development of AlGaN/GaN HEMTs on Different Substrates

      Ming Pan, Veeco Instruments
      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Mark Oliver, IQE RF LLC

  • Geerpuram, Dwarakanath

    Plasma-Therm LLC

    • The Effects of Increasing the Aspect Ratio of GaAs Backside Vias

      Holly Rubin, Plasma-Therm LLC
      Dwarakanath Geerpuram, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC

  • GmbH, Semiconductors

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Golovato**, Steve

    * Materion Microelectronics and Services ** NEXX Systems

    • PVD Magnetron Sputtering Parameters and their Effect on the Composition of AuSn Solder

      Heiner Lichtenberger*, * Materion Microelectronics and Services ** NEXX Systems
      Alan Duckham
      Steve Golovato**, * Materion Microelectronics and Services ** NEXX Systems

  • Gorka, Daniel

    IQE RF LLC

    • Development of AlGaN/GaN HEMTs on Different Substrates

      Ming Pan, Veeco Instruments
      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Mark Oliver, IQE RF LLC

  • Hafiz, F.

    Shibaura Institute of Technology

    • Removal of Surface-Related Current Slump in Field-Plate GaAs FETs

      F. Hafiz, Shibaura Institute of Technology
      M. Kumeno, Shibaura Institute of Technology
      T. Tanaka, Hitachi Metals

  • Hall, Craig

    Qorvo

    • Backside Via Process of GaN Device Fabrication

      Ju-Ai Ruan, Qorvo Inc.
      Craig Hall, Qorvo
      Celicia Della-Morrow, TriQuint Semiconductor
      Tom Nagle, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.

  • He, Qizhi

    • ADHESION CHARACTERIZATION OF PHOTO-DEFINABLE EPOXIES ON HIGH ASPECT RATIO STRUCTURES FOR HIGH PERFORMANCE APPLICATIONS

      Jan Campbell
      Qizhi He

  • Henry, H.G.

    Northrop Grumman Electronic Systems

    • Low-Loss Metal-on-BCB Technology for Next-Generation GaN MMICs

      E.J. Stewart, Northrop Grumman Electronic Systems
      R.G. Freitag, Northrop Grumman Electronic Systems
      J. S. Mason, Northrop Grumman Mission Systems
      M.J. Walker, Northrop Grumman Electronic Systems
      H.G. Henry, Northrop Grumman Electronic Systems

  • Her, Jimmy

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Hillier, G.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Hiramoto, M.

    Samco Inc.

    • Chlorine-Based ICP Etching for Improving the Luminance Efficiency in Nitride LEDs

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.

  • Hochstetler, Spencer

    Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

    • A New Single Wafer Cleaning Technology for Compound Semiconductor Manufacturing

      Richard Peters, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Spencer Hochstetler, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Keith Cox, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Palmer Holbrook, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

  • Holbrook, Palmer

    Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

    • A New Single Wafer Cleaning Technology for Compound Semiconductor Manufacturing

      Richard Peters, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Spencer Hochstetler, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Keith Cox, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Palmer Holbrook, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

  • Hong, Bing-Shan

    WIN Semiconductors Corp.

    • Novel Bi-HEMT Technology for LTE Handset Application

      Bing-Shan Hong, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp

  • Hsiao; G. Chen; S. Chou; H. Liao, T.

    WIN Semiconductors Corp.

    • Manufacturing of Cu-pillar Bump for III-V MMIC Thermal Management

      T. Hsiao; G. Chen; S. Chou; H. Liao, WIN Semiconductors Corp.

  • Huang, John

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Huang, Kevin

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Huang b, Tony

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Huang*, Sen

    Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science

    • ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qimeng Jiang, The Hong Kong University of Science and Technology
      Shu Yang, The Hong Kong University of Science and Technology
      Chunhua Zhou, Hong Kong University of Science and Technology

  • Huanga, Chou-Shuang

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Hung, Chien-Chung

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Hung a, Chien-Chung

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Imada, Tadahiro

    Fujitsu Laboratories Ltd.

    • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

      Shiro Ozaki, Fujitsu Limited
      Toshihiro Ohki, Fujitsu Laboratories Ltd.
      Masahito Kanamura, Fujitsu Laboratories Ltd.
      Tadahiro Imada, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Naoya Okamoto, Fujitsu Laboratories Ltd.

  • Iverson, Eric

    University of Illinois at Urbana-Champaign

    • Non-Linearity Characterization of Submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs

      Huiming Xu, University of Illinois at Urbana-Champaign
      Eric Iverson, University of Illinois at Urbana-Champaign
      K.Y. Donald Cheng, University of Illinois at Urbana-Champaign

  • J Carroll, Patrick

    RF Micro Devices, Inc.

    • Use of Knowledge Discovery fromWafer Fab Data for Yield Improvement

      Patrick J Carroll, RF Micro Devices, Inc.

  • J. Aldrich, David

    President and Chief Executive Officer, Skyworks Solutions, Inc.

    • Semiconductor Innovation: Enabling Mobile Connectivity

      David J. Aldrich, President and Chief Executive Officer, Skyworks Solutions, Inc.

  • J. Kolias, Nicholas

    Raytheon Company

    • GaN Technology for Radars

      Colin S. Whelan, Raytheon Company
      Nicholas J. Kolias, Raytheon Company
      Steven Brierley, Raytheon Company
      Chris MacDonald, Raytheon Company
      Steven Bernstein, Raytheon Company

  • J. Meyer, D.

    • 40 nm T-Gate Process Development using ZEP Reflow

      D. J. Meyer
      B. P. Downey
      R. Bass, Naval Research Laboratory
      D. S. Katzer

  • Jiang, Qimeng

    The Hong Kong University of Science and Technology

    • ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qimeng Jiang, The Hong Kong University of Science and Technology
      Shu Yang, The Hong Kong University of Science and Technology
      Chunhua Zhou, Hong Kong University of Science and Technology

  • John C.C. Fan, Dr.

    Kopin Corporation

    • Challenges and Opportunities in the III-V Industry: A Quarter Century View

      Dr. John C.C. Fan, Kopin Corporation

  • Kamogawa, Harry

    Hitachi Cable, Ltd.

    • Light response in buffer leakages and its application for epi quality development in AlGaN/GaN HEMT structures

      Takeshi Tanaka, SCIOCS Company Ltd.
      Harry Kamogawa, Hitachi Cable, Ltd.

  • Kanamura, Masahito

    Fujitsu Laboratories Ltd.

    • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

      Shiro Ozaki, Fujitsu Limited
      Toshihiro Ohki, Fujitsu Laboratories Ltd.
      Masahito Kanamura, Fujitsu Laboratories Ltd.
      Tadahiro Imada, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Naoya Okamoto, Fujitsu Laboratories Ltd.

  • Kao, Ming-Yih

    Qorvo, Inc.

    • Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography

      Amy Zhou, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Marcus King, TriQuint Semiconductor, TX
      Ming-Yih Kao, Qorvo, Inc.
      Hua-Tang Chen, Qorvo, Inc.
      Chris Puckett, TriQuint Semiconductor

  • Kao, Tsung-Ting

    Georgia Institute of Technology,

    • Threshold Voltage Control of Recessed-Gate III-N HFETs Using an Electrode-less Wet Etching Technique

      Yi-Che Lee, Georgia Institute of Technology
      Cheng-Yin Wang, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,

  • Khanna, Rohit

    Plasma-Therm LLC

    • High Throughput Stress-Controlled Silicon Nitride Deposition For Compound Semiconductor Device Manufacturing

      Kenneth D. Mackenzie
      Rohit Khanna, Plasma-Therm LLC

  • King, Marcus

    TriQuint Semiconductor, TX

    • Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography

      Amy Zhou, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Marcus King, TriQuint Semiconductor, TX
      Ming-Yih Kao, Qorvo, Inc.
      Hua-Tang Chen, Qorvo, Inc.
      Chris Puckett, TriQuint Semiconductor

  • Krause, Rainer

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Ku, Tzu-Kun

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Kumeno, M.

    Shibaura Institute of Technology

    • Removal of Surface-Related Current Slump in Field-Plate GaAs FETs

      F. Hafiz, Shibaura Institute of Technology
      M. Kumeno, Shibaura Institute of Technology
      T. Tanaka, Hitachi Metals

  • Kuo, Eric

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Kuo, Wei-Hung

    Industrial Technology Research Institute

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Laboutin, O.

    Kopin Corporation

    • An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production

      M. Youngers, Kopin Corporation
      P. Rice, Kopin Corporation
      G. Yeboah, Kopin Corporation
      E. Rehder, Kopin Corporation
      O. Laboutin, Kopin Corporation
      K. S. Stevens, Kopin Corporation

  • Lai, William

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Lee, Chwan-Ying

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Lee, Lurng-Shehng

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Lee, Se-Jung

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

    • 150 nm T-shape Gate Process Capacity Improvement

      Se-Jung Lee, WIN Semiconductors Corp.
      Chih-Chuan Chang, WIN Semiconductors Corp.

  • Lee, Yi-Che

    Georgia Institute of Technology

    • Threshold Voltage Control of Recessed-Gate III-N HFETs Using an Electrode-less Wet Etching Technique

      Yi-Che Lee, Georgia Institute of Technology
      Cheng-Yin Wang, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,

  • Lee a, Chwan-Ying

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Lee a, Lurng-Shehng

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Li, Qiang

    Hong Kong University of Science and Technology

    • Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance

      Qiang Li, Hong Kong University of Science and Technology
      Xiuju Zhou, Hong Kong University of Science and Technology

  • Liaoa, Sheng-Yu

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Lichtenberger*, Heiner

    * Materion Microelectronics and Services ** NEXX Systems

    • PVD Magnetron Sputtering Parameters and their Effect on the Composition of AuSn Solder

      Heiner Lichtenberger*, * Materion Microelectronics and Services ** NEXX Systems
      Alan Duckham
      Steve Golovato**, * Materion Microelectronics and Services ** NEXX Systems

  • Lin, Cheng-Kuo

    WIN Semiconductors Corp

    • A Ultra High Ruggedness Performance of InGaP/GaAs HBT

      Chiou, WiN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp.

    • Novel Bi-HEMT Technology for LTE Handset Application

      Bing-Shan Hong, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp

  • Lin, Hsi-Tsung

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Lin, Hsin-Ying

    Graduate Institute of Photonics and Optoelectronics and 2National Taiwan University

    • Demonstration of Low Subthreshold Swing a-InGaZnO Thin Film Transistors

      Liang-Yu Su, National Taiwan University
      Hsin-Ying Lin, Graduate Institute of Photonics and Optoelectronics and 2National Taiwan University
      Huang-Kai Lin, Neoton Optoelectronics, Inc.

  • Lin, Huang-Kai

    Neoton Optoelectronics, Inc.

    • Demonstration of Low Subthreshold Swing a-InGaZnO Thin Film Transistors

      Liang-Yu Su, National Taiwan University
      Hsin-Ying Lin, Graduate Institute of Photonics and Optoelectronics and 2National Taiwan University
      Huang-Kai Lin, Neoton Optoelectronics, Inc.

  • Lin, Suh-Fang

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Lina, Ray-Ming

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Luu, Lena

    Global Communications Semiconductor, LLC

    • Methods for Removing TiOx Residue from Au Bond Pad

      Lena Luu, Global Communications Semiconductor, LLC
      Minkar Chen, Global Communications Seminconductor, LLC
      Frank Monzon, Global Communications Semiconductors, Inc.

  • M. Eastham, James

    TriQuint Semiconductor

    • Predicting, Validating, and Improving Yield of Multi-Chip RF Modules During Product Development

      James M. Eastham, TriQuint Semiconductor

  • MacDonald, Chris

    Raytheon Company

    • GaN Technology for Radars

      Colin S. Whelan, Raytheon Company
      Nicholas J. Kolias, Raytheon Company
      Steven Brierley, Raytheon Company
      Chris MacDonald, Raytheon Company
      Steven Bernstein, Raytheon Company

  • Mason, J. S.

    Northrop Grumman Mission Systems

    • Low-Loss Metal-on-BCB Technology for Next-Generation GaN MMICs

      E.J. Stewart, Northrop Grumman Electronic Systems
      R.G. Freitag, Northrop Grumman Electronic Systems
      J. S. Mason, Northrop Grumman Mission Systems
      M.J. Walker, Northrop Grumman Electronic Systems
      H.G. Henry, Northrop Grumman Electronic Systems

  • McCallum, D.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Menozzi, R.

    University of Parma, Italy

    • Empirical and Physical Modeling of Self-Heating in Power AlGaN/GaN HEMTs

      M. Bernardoni, Department of Information Engineering, University of Parma
      N. Delmonte, Department of Information Engineering, University of Parma
      R. Menozzi, University of Parma, Italy

  • Meyuhas, Ariel

    The MAX Group

    • The Best MES Selection Process & Benchmark Survey For a Semiconductor Fab Case Study

      Danny Rosner, MAX I.E.G. LLC
      Ariel Meyuhas, The MAX Group

  • Miyamoto, H.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Monzon, Frank

    Global Communications Semiconductors, Inc.

    • Methods for Removing TiOx Residue from Au Bond Pad

      Lena Luu, Global Communications Semiconductor, LLC
      Minkar Chen, Global Communications Seminconductor, LLC
      Frank Monzon, Global Communications Semiconductors, Inc.

  • Müller, Birgit

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Nagle, Tom

    Qorvo, Inc.

    • Backside Via Process of GaN Device Fabrication

      Ju-Ai Ruan, Qorvo Inc.
      Craig Hall, Qorvo
      Celicia Della-Morrow, TriQuint Semiconductor
      Tom Nagle, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.

  • Nakamura, Norikazu

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

      Shiro Ozaki, Fujitsu Limited
      Toshihiro Ohki, Fujitsu Laboratories Ltd.
      Masahito Kanamura, Fujitsu Laboratories Ltd.
      Tadahiro Imada, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Naoya Okamoto, Fujitsu Laboratories Ltd.

  • Nelson, Drew

    IQE plc

    • Current Developments in Epi Foundry Services for Advanced Wireless Applications

      Drew Nelson, IQE plc

  • Nercessian, Daniel

    Skyworks Solutions

    • Successful GaAs Backend Process Improvement

      Scott Farmosa, Skyworks Solutions
      Jennifer Welborn, Skyworks Solutions
      Daniel Nercessian, Skyworks Solutions

  • Nishimiya, T.

    Samco Inc.

    • Chlorine-Based ICP Etching for Improving the Luminance Efficiency in Nitride LEDs

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.

  • Ogiya, H.

    Samco Inc.

    • Chlorine-Based ICP Etching for Improving the Luminance Efficiency in Nitride LEDs

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.

  • Ohki, Toshihiro

    Fujitsu Laboratories Ltd.

    • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

      Shiro Ozaki, Fujitsu Limited
      Toshihiro Ohki, Fujitsu Laboratories Ltd.
      Masahito Kanamura, Fujitsu Laboratories Ltd.
      Tadahiro Imada, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Naoya Okamoto, Fujitsu Laboratories Ltd.

  • Okamoto, Naoya

    Fujitsu Laboratories Ltd.

    • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

      Shiro Ozaki, Fujitsu Limited
      Toshihiro Ohki, Fujitsu Laboratories Ltd.
      Masahito Kanamura, Fujitsu Laboratories Ltd.
      Tadahiro Imada, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Naoya Okamoto, Fujitsu Laboratories Ltd.

  • Oliver, Mark

    IQE RF LLC

    • Development of AlGaN/GaN HEMTs on Different Substrates

      Ming Pan, Veeco Instruments
      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Mark Oliver, IQE RF LLC

  • Osowski, M.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Otoki, Yohei

    SCIOCS

    • What Happened, What Was Done and What Was Learned in CS Industry through Catastrophic Disasters in Japan

      Yohei Otoki, SCIOCS

  • Ozaki, Shiro

    Fujitsu Limited

    • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

      Shiro Ozaki, Fujitsu Limited
      Toshihiro Ohki, Fujitsu Laboratories Ltd.
      Masahito Kanamura, Fujitsu Laboratories Ltd.
      Tadahiro Imada, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Naoya Okamoto, Fujitsu Laboratories Ltd.

  • Pan, Ming

    Veeco Instruments

    • Development of AlGaN/GaN HEMTs on Different Substrates

      Ming Pan, Veeco Instruments
      Xiang Gao, IQE RF LLC
      Daniel Gorka, IQE RF LLC
      Mark Oliver, IQE RF LLC

  • Pan, N.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Patterson, Neill

    TriQuint Semiconductor

    • A Robust, Non-Parametric Method to Identify Outliers and Improve Final Yield and Quality

      Neill Patterson, TriQuint Semiconductor

  • Pearsall, Thomas

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Peters, Richard

    Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

    • A New Single Wafer Cleaning Technology for Compound Semiconductor Manufacturing

      Richard Peters, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Spencer Hochstetler, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Keith Cox, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group
      Palmer Holbrook, Dynaloy, LLC Samuel Mony, Jiang Wang, Tom Grayson Skyworks Solutions, Inc., Thorsten Matthias, Thomas Glinsner, Martin Schmidbauer EV Group

  • Puckett, Chris

    TriQuint Semiconductor

    • Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography

      Amy Zhou, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Marcus King, TriQuint Semiconductor, TX
      Ming-Yih Kao, Qorvo, Inc.
      Hua-Tang Chen, Qorvo, Inc.
      Chris Puckett, TriQuint Semiconductor

  • R. Barnes, A.

    ESA/ESTEC Noordwijk

    • Preliminary Reliability Data from Accelerated RF Life Tests on European GaN HEMTs

      A. R. Barnes, ESA/ESTEC Noordwijk
      F. Vitobello, ESA/ESTEC Noordwijk

  • Rajaram, G.

    University of Hyderabad

    • New insights into formation of Ni-based alloyed Ohmic contacts to GaAs

      G. Rajaram, University of Hyderabad

  • Raman, Sanjay

    Rodgers, Defense Advanced Research Projects Agency, Tsu-Hsi Chang, Booz Allen Hamilton Inc.

    • The DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program: Towards a Next-Generation Technology Platform for High-Performance Microsystems

      Sanjay Raman, Rodgers, Defense Advanced Research Projects Agency, Tsu-Hsi Chang, Booz Allen Hamilton Inc.

  • Rehder, E.

    Kopin Corporation

    • An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production

      M. Youngers, Kopin Corporation
      P. Rice, Kopin Corporation
      G. Yeboah, Kopin Corporation
      E. Rehder, Kopin Corporation
      O. Laboutin, Kopin Corporation
      K. S. Stevens, Kopin Corporation

  • Renc, Shuh-Sen

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Rice, P.

    Kopin Corporation

    • An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production

      M. Youngers, Kopin Corporation
      P. Rice, Kopin Corporation
      G. Yeboah, Kopin Corporation
      E. Rehder, Kopin Corporation
      O. Laboutin, Kopin Corporation
      K. S. Stevens, Kopin Corporation

  • Rosner, Danny

    MAX I.E.G. LLC

    • The Best MES Selection Process & Benchmark Survey For a Semiconductor Fab Case Study

      Danny Rosner, MAX I.E.G. LLC
      Ariel Meyuhas, The MAX Group

  • Ruan, Ju-Ai

    Qorvo Inc.

    • Backside Via Process of GaN Device Fabrication

      Ju-Ai Ruan, Qorvo Inc.
      Craig Hall, Qorvo
      Celicia Della-Morrow, TriQuint Semiconductor
      Tom Nagle, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.

  • Rubin, Holly

    Plasma-Therm LLC

    • The Effects of Increasing the Aspect Ratio of GaAs Backside Vias

      Holly Rubin, Plasma-Therm LLC
      Dwarakanath Geerpuram, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC

  • S. Katzer, D.

    • 40 nm T-Gate Process Development using ZEP Reflow

      D. J. Meyer
      B. P. Downey
      R. Bass, Naval Research Laboratory
      D. S. Katzer

  • S. Stevens, K.

    Kopin Corporation

    • An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production

      M. Youngers, Kopin Corporation
      P. Rice, Kopin Corporation
      G. Yeboah, Kopin Corporation
      E. Rehder, Kopin Corporation
      O. Laboutin, Kopin Corporation
      K. S. Stevens, Kopin Corporation

  • S. Whelan, Colin

    Raytheon Company

    • GaN Technology for Radars

      Colin S. Whelan, Raytheon Company
      Nicholas J. Kolias, Raytheon Company
      Steven Brierley, Raytheon Company
      Chris MacDonald, Raytheon Company
      Steven Bernstein, Raytheon Company

  • Schenk, Hermann

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Semiconductor, TriQuint

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Sharp, John

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Snodgrass, Ryan

    TriQuint Semiconductor

    • Bridging the Social Gap Working Together for Continued Prosperity and Growth

      Ryan Snodgrass, TriQuint Semiconductor
      Jinhong Yang, Qorvo

  • Soitec,

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Stender, C.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Stevenson, Richard

    Consultant Editor, Compound Semiconductor magazine

    • Europe’s Compound Semiconductor Industry

      Richard Stevenson, Consultant Editor, Compound Semiconductor magazine

  • Stewart, E.J.

    Northrop Grumman Electronic Systems

    • Low-Loss Metal-on-BCB Technology for Next-Generation GaN MMICs

      E.J. Stewart, Northrop Grumman Electronic Systems
      R.G. Freitag, Northrop Grumman Electronic Systems
      J. S. Mason, Northrop Grumman Mission Systems
      M.J. Walker, Northrop Grumman Electronic Systems
      H.G. Henry, Northrop Grumman Electronic Systems

  • Su, Liang-Yu

    National Taiwan University

    • Demonstration of Low Subthreshold Swing a-InGaZnO Thin Film Transistors

      Liang-Yu Su, National Taiwan University
      Hsin-Ying Lin, Graduate Institute of Photonics and Optoelectronics and 2National Taiwan University
      Huang-Kai Lin, Neoton Optoelectronics, Inc.

  • Suarez, Jose

    • A Call to Higher Quality in GaAs

      Jose Suarez
      Jason Fender

    • Method for Detecting GaAs Die Fractures in Device Manufacturing Through the Use of a Designed Test Vehicle

      Jason Fender
      Jose Suarez

  • Takatani, Shinichiro

    WIN Semiconductors Corp

    • Novel Bi-HEMT Technology for LTE Handset Application

      Bing-Shan Hong, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp

  • Tanaka, T.

    Hitachi Metals

    • Removal of Surface-Related Current Slump in Field-Plate GaAs FETs

      F. Hafiz, Shibaura Institute of Technology
      M. Kumeno, Shibaura Institute of Technology
      T. Tanaka, Hitachi Metals

  • Tanaka, Takeshi

    SCIOCS Company Ltd.

    • Light response in buffer leakages and its application for epi quality development in AlGaN/GaN HEMT structures

      Takeshi Tanaka, SCIOCS Company Ltd.
      Harry Kamogawa, Hitachi Cable, Ltd.

  • Tatavarti, R.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Technologies, Avago

    Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic

    • The CLP Regulation – Opportunity for Global Standardization of Substance Classifications or Threat to Innovation from Regulatory Overreach?

      Hermann Schenk, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Freiberger Compound Materials, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Steve Aden, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Avago Technologies, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Hani Badawi, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      AXT, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Bergunde, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Semiconductors GmbH, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Rainer Krause, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Soitec, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Birgit Müller, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      Thomas Pearsall, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      EPIC Association, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      John Sharp, Azur Space Solar Power GmbH, Roy Blunt, IQE plc, Sylvi Claußnitzer, GAIT Consultant, Iwan Davies, IQE plc, Gerhard Hirschle, United Monolithic
      TriQuint Semiconductor

  • Ting, Hao-Yu

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Tsai, Shu-Hsiao

    WIN Semiconductors Corp

    • Novel Bi-HEMT Technology for LTE Handset Application

      Bing-Shan Hong, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp

  • Tsai a, Ming-Jinn

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Tsaia, Ying-Jie

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Tsumura, Akihiro

    Sangyo Times, Inc.

    • Present Situation and Trend of Compound Semiconductor Industry in Japan

      Akihiro Tsumura, Sangyo Times, Inc.

  • Tuminello, F.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Vitobello, F.

    ESA/ESTEC Noordwijk

    • Preliminary Reliability Data from Accelerated RF Life Tests on European GaN HEMTs

      A. R. Barnes, ESA/ESTEC Noordwijk
      F. Vitobello, ESA/ESTEC Noordwijk

  • Walker, M.J.

    Northrop Grumman Electronic Systems

    • Low-Loss Metal-on-BCB Technology for Next-Generation GaN MMICs

      E.J. Stewart, Northrop Grumman Electronic Systems
      R.G. Freitag, Northrop Grumman Electronic Systems
      J. S. Mason, Northrop Grumman Mission Systems
      M.J. Walker, Northrop Grumman Electronic Systems
      H.G. Henry, Northrop Grumman Electronic Systems

  • Wang, Cheng-Yin

    Georgia Institute of Technology

    • Threshold Voltage Control of Recessed-Gate III-N HFETs Using an Electrode-less Wet Etching Technique

      Yi-Che Lee, Georgia Institute of Technology
      Cheng-Yin Wang, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,

  • Wang, Huang-Wen

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Wang, Wen-Kai

    WIN Semiconductors Corp.

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Wei, Rui-Ching

    WIN Semiconductors Corp.

    • Yield Improvement for Thin 50 um GaAs Product Line

      Rui-Ching Wei, WIN Semiconductors Corp.
      Huang-Wen Wang, WIN Semiconductors Corp.
      Chen-Che Chin, WIN Semiconductors Corp.
      Summer Chiang, WIN Semiconductors Corp.
      Jimmy Her, WIN Semiconductors Corp.
      Ping-Wei Chen, WIN Semiconductors Corp.
      Kevin Huang, WIN Semiconductors Corp.

  • Welborn, Jennifer

    Skyworks Solutions

    • Successful GaAs Backend Process Improvement

      Scott Farmosa, Skyworks Solutions
      Jennifer Welborn, Skyworks Solutions
      Daniel Nercessian, Skyworks Solutions

  • Westerman, Russ

    Plasma-Therm, LLC

    • The Effects of Increasing the Aspect Ratio of GaAs Backside Vias

      Holly Rubin, Plasma-Therm LLC
      Dwarakanath Geerpuram, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC

  • Wibowo, A.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Wu, David

    WIN Semiconductors Corp

    • To Improve E-beam T-gate Yield by Pre-Cleaning Process

      Hao-Yu Ting, WIN Semiconductors Corp.
      John Huang, WIN Semiconductors Corp.
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Eric Kuo, WIN Semiconductors Corp.
      Se-Jung Lee, WIN Semiconductors Corp.
      David Wu, WIN Semiconductors Corp
      William Lai, WIN Semiconductors Corp.
      Kerry Chang, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.

  • Xu, Huiming

    University of Illinois at Urbana-Champaign

    • Non-Linearity Characterization of Submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs

      Huiming Xu, University of Illinois at Urbana-Champaign
      Eric Iverson, University of Illinois at Urbana-Champaign
      K.Y. Donald Cheng, University of Illinois at Urbana-Champaign

  • Xuan, Rong

    Technology Development Division, Episil-Precision Inc, Taiwan

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Yang, Jinhong

    Qorvo

    • Bridging the Social Gap Working Together for Continued Prosperity and Growth

      Ryan Snodgrass, TriQuint Semiconductor
      Jinhong Yang, Qorvo

  • Yang, Shu

    The Hong Kong University of Science and Technology

    • ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qimeng Jiang, The Hong Kong University of Science and Technology
      Shu Yang, The Hong Kong University of Science and Technology
      Chunhua Zhou, Hong Kong University of Science and Technology

  • Yang, Yinbao

    Qorvo, Inc.

    • Backside Via Process of GaN Device Fabrication

      Ju-Ai Ruan, Qorvo Inc.
      Craig Hall, Qorvo
      Celicia Della-Morrow, TriQuint Semiconductor
      Tom Nagle, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.

  • Yang a, Tzu-Ming

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Yeboah, G.

    Kopin Corporation

    • An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production

      M. Youngers, Kopin Corporation
      P. Rice, Kopin Corporation
      G. Yeboah, Kopin Corporation
      E. Rehder, Kopin Corporation
      O. Laboutin, Kopin Corporation
      K. S. Stevens, Kopin Corporation

  • Yen, Cheng-Tyng

    Electronics and OptoElectronics Research Laboratories (EOL), ITR

    • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

      Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Wei-Hung Kuo, Industrial Technology Research Institute
      Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • Yen a, Cheng-Tyng

    Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

    • Characteristics of 4H-SiC Dual-Metal and MOS Trench Schottky Rectifiers

      Cheng-Tyng Yen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Patrick Chuang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Young-Shying Chen a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chien-Chung Hung a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Chwan-Ying Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Lurng-Shehng Lee a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tzu-Ming Yang a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Kuan-Wei Chu a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Ming-Jinn Tsai a, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Gary Chen b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b
      Tony Huang b, Cheng-Tyng Yen (a, Patrick Chuang (b,Young-Shying Chen (a, Chien-Chung Hung (a, Chwan-Ying Lee (a, Lurng-Shehng Lee (a, Tzu-Ming Yang (a, Kuan-Wei Chu (a, Ming-Jinn Tsai (a, Gary Chen (b, Tony Huang (b

  • Youngers, M.

    Kopin Corporation

    • An In-Situ Reflectance Implementation for High Volume Electronic Device Epitaxial Wafer Production

      M. Youngers, Kopin Corporation
      P. Rice, Kopin Corporation
      G. Yeboah, Kopin Corporation
      E. Rehder, Kopin Corporation
      O. Laboutin, Kopin Corporation
      K. S. Stevens, Kopin Corporation

  • Youtsey, C.

    MicroLink Devices, Inc.

    • Epitaxial Lift-Off of Large-Area GaAs Thin-Film Multi-Junction Solar Cells

      C. Youtsey, MicroLink Devices, Inc.
      J. Adams, MicroLink Devices, Inc.
      R. Chan, MicroLink Devices, Inc.
      V. Elarde, MicroLink Devices, Inc.
      G. Hillier, MicroLink Devices, Inc.
      M. Osowski, MicroLink Devices, Inc.
      D. McCallum, MicroLink Devices, Inc.
      H. Miyamoto, MicroLink Devices, Inc.
      N. Pan, MicroLink Devices, Inc.
      C. Stender, MicroLink Devices, Inc.
      R. Tatavarti, MicroLink Devices, Inc.
      F. Tuminello, MicroLink Devices, Inc.
      A. Wibowo, MicroLink Devices, Inc.

  • Yu, Sheng-Fu

    National Cheng Kung University

    • Investigation of Efficiency Droop for InGaN-based LEDs with Carrier Localization State and Polarization Effect

      Sheng-Fu Yu, National Cheng Kung University

  • Yub, Sheng-Fu

    a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

    • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

      Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
      Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Zhou, Amy

    TriQuint Semiconductor, TX

    • Set up and Characterization of an Optical Wide Stepper Process For DR15 Technology as a replacement for E-Beam Lithography

      Amy Zhou, TriQuint Semiconductor, TX
      Jerry Beene, TriQuint Semiconductor,TX
      Marcus King, TriQuint Semiconductor, TX
      Ming-Yih Kao, Qorvo, Inc.
      Hua-Tang Chen, Qorvo, Inc.
      Chris Puckett, TriQuint Semiconductor

  • Zhou, Chunhua

    Hong Kong University of Science and Technology

    • ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qimeng Jiang, The Hong Kong University of Science and Technology
      Shu Yang, The Hong Kong University of Science and Technology
      Chunhua Zhou, Hong Kong University of Science and Technology

  • Zhou, Xiuju

    Hong Kong University of Science and Technology

    • Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance

      Qiang Li, Hong Kong University of Science and Technology
      Xiuju Zhou, Hong Kong University of Science and Technology