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  • A. Abshere, Travis

    • Challenges of Equipment Support in a Factory with a Diverse Multigenerational Toolset

      David W. Brindza
      Travis A. Abshere
      Download Paper

  • A. Gajewski, Don

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • A. Gajewski, Donald

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • A. Ledford, Keri

    • Ag/Diamond Composite Shims for HPA Thermal Management

      Jason H. Nadler
      Keri A. Ledford
      Download Paper

  • Agashe, Shashank

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Aigner, R.

    • Bulk Acoustic Wave Technology Advances

      G. Fattinger
      R. Aigner
      P. Stokes
      A. Volatier
      F. Dumont
      Download Paper

  • Alcorn, Paul

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Altman, David

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Andre Jeffrey B. Barner, Ulf

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • Antunes, Helder

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

  • Awad, Nicolas

    • Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control

      Lesley Cheema
      Jason Welter
      Nicolas Awad
      Download Paper

  • B. Barner, Jeffrey

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Banbrook, Hal

    • Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments

      Peter J. Zampardi, Qorvo, Inc.
      Cristian Cismaru, Skyworks Solutions, Inc.
      Hal Banbrook
      Download Paper

  • Barkley, Adam

    Wolfspeed, a Cree Company

    • High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules

      Ty McNutt
      Zach Cole
      Bret Whitaker
      Adam Barkley, Wolfspeed, a Cree Company
      Alex Lostetter
      Download Paper

  • Bartle, Dylan

    Skyworks Solutions Inc.

    • Ultra Fast Switching Speed FET Technology Development

      Jerod Mason
      Guoliang Zhou, Skyworks Solutions, Inc.
      Joe Bulger
      Jay Yang
      David Petzold
      Dylan Bartle, Skyworks Solutions Inc.
      Download Paper

  • Bédard, Jean-François

    • Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices

      Jean-François Bédard
      Jan Campbell
      Martin Ivie
      Download Paper

  • Benedek, Michael

    • Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production

      Joseph Smolko
      Colin Whelan
      Christopher Macdonald
      Joshua Krause
      Bradley Mikesell
      Michael Benedek
      Download Paper

  • Bengtsson, O.

    Ferdinand-Braun-Institut

  • Bock, Karlheinz

    • Heterointegration Technologies for High Frequency Modules Based on Film Substrates

      Karlheinz Bock
      Erwin Yacoub-George
      Henry Wolf
      Gerhard Klink
      Download Paper

  • Bulger, Joe

    • Ultra Fast Switching Speed FET Technology Development

      Jerod Mason
      Guoliang Zhou, Skyworks Solutions, Inc.
      Joe Bulger
      Jay Yang
      David Petzold
      Dylan Bartle, Skyworks Solutions Inc.
      Download Paper

  • Burk, Al

    Wolfspeed, A Cree Company

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

  • C. Chao, P.

    MEC, BAE Systems, IQE

    • A New High Power GaN HEMT with Low Temperature Bonded Diamond Substrate Technology

      P. C. Chao, MEC, BAE Systems, IQE
      Download Paper

  • Campbell, Jan

    • Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach

      Jan Campbell
      Martin Ivie
      Qizhi He
      Download Paper

    • Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices

      Jean-François Bédard
      Jan Campbell
      Martin Ivie
      Download Paper

    • Back to the Future: How Implementing Retro-Style Processing Can be an Improvement

      Martin Ivie
      Jan Campbell
      Qizhi He
      Download Paper

  • Casbon, Michael

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Cerio, Frank

    • Development of PVD-AlN Buffer Process for GaN-on-Si

      Frank Cerio
      Arindom Datta
      Adrian Devasahayam
      Boris Druz
      Download Paper

  • Chang, Hsiu-Chen

    • Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process

      Hsiu-Chen Chang
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Tim Hsiao
      Steven Chou
      C. Chen, Momentive Technologies
      Pi-Hsia Wang
      Download Paper

  • Chang, Ricky

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Cheema, Lesley

    • Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control

      Lesley Cheema
      Jason Welter
      Nicolas Awad
      Download Paper

  • Chen, Arnold

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Chen, C.

    Momentive Technologies

    • Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process

      Hsiu-Chen Chang
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Tim Hsiao
      Steven Chou
      C. Chen, Momentive Technologies
      Pi-Hsia Wang
      Download Paper

  • Chen, Chia-Hao

    WIN Semiconductors Corp

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Chen, Chin-Shun

    • Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps

      Martin J. Brophy, Avago Technologies
      Chin-Shun Chen
      Keith Quick, vago Technologies, Keithley Instruments, Inc.
      Download Paper

  • Chen, Quisheng

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Chen, Yu-Ling

    • Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications

      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Rong-Hao Syu
      Yu-Ling Chen
      Wen-Fu Yu
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Download Paper

  • Cheng, Kezia

    Skyworks Solutions Inc.

    • High Precision Thin Metal Film Measurement by Optical Transmission

      Kezia Cheng, Skyworks Solutions Inc.
      Download Paper

  • Chevtchenko, S. A.

    Ferdinand-Braun-Institut (FBH)

  • Cho, I-Te

    WIN Semiconductors Corp.

  • Choi, Chi-hing

    • Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications

      Tertius Rivers
      Corey Nevers, Qorvo, Inc
      Chi-hing Choi
      Hui Liu
      Download Paper

  • Chou, Steven

    • Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process

      Hsiu-Chen Chang
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Tim Hsiao
      Steven Chou
      C. Chen, Momentive Technologies
      Pi-Hsia Wang
      Download Paper

  • Christou, A.

    • Process-Reliability Relationships in GaN and GaAs Field Effect Transistors and HFETs

      A. Christou
      Download Paper

  • Chumbes, Eduardo

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Cismaru, Cristian

    Skyworks Solutions, Inc.

    • Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments

      Peter J. Zampardi, Qorvo, Inc.
      Cristian Cismaru, Skyworks Solutions, Inc.
      Hal Banbrook
      Download Paper

  • Cole, Zach

    • High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules

      Ty McNutt
      Zach Cole
      Bret Whitaker
      Adam Barkley, Wolfspeed, a Cree Company
      Alex Lostetter
      Download Paper

  • Colin J. Humphreys, Sir

    • Low-Cost High-Efficiency GaN LEDs on Large-Area Silicon Substrates

      Sir Colin J. Humphreys
      Download Paper

  • Combe, Suzanne

    • Thick Film Photo Resist Application Spun on Application v. Dry Film Lamination

      Suzanne Combe
      Download Paper

  • Corzine, Scott

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Cova, Paolo

    • GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling

      Nicola Delmonte
      Paolo Cova
      Download Paper

  • Craig, Scott

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Curtis, Jerry

    • A Co-operative Business Model for Advancing Compound Semiconductor Technology

      Jerry Curtis
      Download Paper

  • D. Mackenzie, Kenneth

    • Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry

      Kenneth D. Mackenzie
      David J. Johnson
      Christopher W. Johnson
      Download Paper

  • Dallesasse, J.M.

    University of Illinois at Urbana-Champaign

    • The Discovery of III-V Oxidation, Device Progress, and Application to Vertical-Cavity Surface-Emitting Lasers

      J.M. Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

  • Danzilio, David

  • Datta, Arindom

    • Development of PVD-AlN Buffer Process for GaN-on-Si

      Frank Cerio
      Arindom Datta
      Adrian Devasahayam
      Boris Druz
      Download Paper

  • de Rooij, Michael

    • Emerging Applications for GaN Transistors

      David Reusch
      Alex Lidow
      Johan Strydom
      Michael de Rooij
      Download Paper

  • Debackere, Peter

    Infinera Corporation

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Della-Morrow, C.

    • Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-µm GaN on SiC HEMT Process

      C. Della-Morrow
      C. Lee
      K. Salzman
      Download Paper

  • Delmonte, Nicola

    • GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling

      Nicola Delmonte
      Paolo Cova
      Download Paper

  • DeMars, Scott

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Devasahayam, Adrian

    • Development of PVD-AlN Buffer Process for GaN-on-Si

      Frank Cerio
      Arindom Datta
      Adrian Devasahayam
      Boris Druz
      Download Paper

  • Dragoi, V.

    EV Group

    • Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications

      T. Uhrmann, EV Group
      T. Matthias, EV Group
      T. Glinsner
      V. Dragoi, EV Group
      T. Plach
      E. Pabo
      Download Paper

  • Druz, Boris

    • Development of PVD-AlN Buffer Process for GaN-on-Si

      Frank Cerio
      Arindom Datta
      Adrian Devasahayam
      Boris Druz
      Download Paper

  • Du, Jhih-Han

    WIN Semiconductors Corp

  • Dumont, F.

    • Bulk Acoustic Wave Technology Advances

      G. Fattinger
      R. Aigner
      P. Stokes
      A. Volatier
      F. Dumont
      Download Paper

  • Eddy, C.R.

    • Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy

      C.R. Eddy
      Download Paper

  • Engel-Herbert, R.

    • Correct Determination of Trap Densities at High-k/III-V Interfaces

      R. Engel-Herbert
      Download Paper

  • Esposto, Michele

    • Interfacial Charge Properties of ALD/III-Nitride Interfaces

      Ting-Hsiang Hung
      Michele Esposto
      Digbijoy Neelim Nath
      Sriram Krishnamoorthy
      Download Paper

  • Farrell, Donald

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • Fattinger, G.

    • Bulk Acoustic Wave Technology Advances

      G. Fattinger
      R. Aigner
      P. Stokes
      A. Volatier
      F. Dumont
      Download Paper

  • Fay, Patrick

    University of Notre Dame

    • Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing III-V Heterostructure Devices

      Yuning Zhao
      Patrick Fay, University of Notre Dame
      Download Paper

  • Fender, Jason

    • Back Metal Optimization for PbSn Die Attach Assembly

      Jose Suarez
      Jason Fender
      Download Paper

  • Fetzer, Brian

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

  • Fish, Gregory

    • Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits

      Eric Hall
      Jae Shin
      Gregory Fish
      Download Paper

  • Fisher, Jeremy

    Wolfspeed | A Cree Company

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Fu, Jianli

    • How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation

      Susie Ross
      Tin Ko
      Jianli Fu
      Hongxiao Shao
      Download Paper

  • Fury, Ryan

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • G. Dentai, Andrew

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Gao, Jennifer

    Wolfspeed | A Cree Company

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Glick, Jeffrey

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Glinsner, T.

    • Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications

      T. Uhrmann, EV Group
      T. Matthias, EV Group
      T. Glinsner
      V. Dragoi, EV Group
      T. Plach
      E. Pabo
      Download Paper

  • GM Tao, Nick

    • InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect

      Nick GM Tao
      Chien-Ping Lee
      Download Paper

  • Gupta, A.

    • The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB

      J. Parke, Northrop Grumman (MS), Linthicum, MD
      A. Gupta
      J. Mason, Northrop Grumman (MS), Linthicum, MD
      K. Renaldo, Northrop Grumman (MS), Linthicum, MD
      Download Paper

  • H. Nadler, Jason

    • Ag/Diamond Composite Shims for HPA Thermal Management

      Jason H. Nadler
      Keri A. Ledford
      Download Paper

  • Hagleitner, Helmut

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Hall, Eric

    • Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits

      Eric Hall
      Jae Shin
      Gregory Fish
      Download Paper

  • Hallin, Christer

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

  • Harris, Mike

    • GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned Arrays

      Mike Harris
      Download Paper

  • He, Qizhi

    • Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach

      Jan Campbell
      Martin Ivie
      Qizhi He
      Download Paper

    • Back to the Future: How Implementing Retro-Style Processing Can be an Improvement

      Martin Ivie
      Jan Campbell
      Qizhi He
      Download Paper

  • Heinrich, W.

    • BCB Encapsulation for High Power AlGaN/GaN-HFET Technology

      P. Kurpas, Ferdinand-Braun-Institut
      O. Bengtsson, Ferdinand-Braun-Institut
      S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
      R. Zhytnytska, Ferdinand-Braun-Institut
      W. Heinrich
      J. Würfl, Ferdinand-Braun-Institut (FBH)
      Download Paper

  • Higham, Eric

    Strategy Analytics

    • GaAs Industry Overview and Forecast: 2011 – 2016 Abstract

      Eric Higham, Strategy Analytics
      Download Paper

  • Hill, Christopher

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Hiramoto, M.

    Samco Inc.

    • Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      S. Motoyama, Samco Inc.
      O. Tsuji
      Download Paper

  • Hoke, William

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Hsiao, Tim

    • Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process

      Hsiu-Chen Chang
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Tim Hsiao
      Steven Chou
      C. Chen, Momentive Technologies
      Pi-Hsia Wang
      Download Paper

  • Hsieh, Stanley

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Huang, Shih-Hui

    WIN Semiconductors Corp

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Huang, Willie

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Huang, Xiaokang

    Qorvo

  • Huang*, Sen

    Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science

    • 600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation

      Zhikai Tang, The Hong Kong University of Science and Technology
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qimeng Jiang, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Download Paper

  • Hung, Ting-Hsiang

    • Interfacial Charge Properties of ALD/III-Nitride Interfaces

      Ting-Hsiang Hung
      Michele Esposto
      Digbijoy Neelim Nath
      Sriram Krishnamoorthy
      Download Paper

  • Hurtt, Sheila

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Isom, Harold

    Qorvo

  • Ivie, Martin

    • Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach

      Jan Campbell
      Martin Ivie
      Qizhi He
      Download Paper

    • Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices

      Jean-François Bédard
      Jan Campbell
      Martin Ivie
      Download Paper

    • Back to the Future: How Implementing Retro-Style Processing Can be an Improvement

      Martin Ivie
      Jan Campbell
      Qizhi He
      Download Paper

  • J. Brophy, Martin

    Avago Technologies

  • J. H. Lambert, Damien

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • J. Johnson, David

    • Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry

      Kenneth D. Mackenzie
      David J. Johnson
      Christopher W. Johnson
      Download Paper

  • J. Tasker, Paul

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • James, Adam

    Infinera Corporation

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Jiang, Qimeng

    The Hong Kong University of Science and Technology

  • John, W.

    • Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching

      K. Y. Osipov, Ferdinand-Braun-Institut
      W. John
      N. Kemf, Ferdinand-Braun-Institut
      S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
      P. Kurpas, Ferdinand-Braun-Institut
      M. Matalla
      O. Krüger
      Download Paper

  • Johnson, Klein

    • Non-850nm Vertical Cavity Laser Applications and Manufacturing Technology

      Klein Johnson
      Download Paper

  • Jr.,

    Naval Research Laboratory

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Kao, Tsung-Ting

    Georgia Institute of Technology,

    • A Study on Al2O3 Deposition by Atomic Layer Deposition for III-Nitride Metal-Insulator-Semiconductor Field Effect Transistors

      Yi-Che Lee, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,
      Download Paper

  • Kato, Masaki

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Kemf, N.

    Ferdinand-Braun-Institut

  • Kennedy, Tim

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

  • Khan, Asif

    • AlInGaN Based Deep Ultraviolet Light Emitting Diodes and Their Applications Technology

      Asif Khan
      Download Paper

  • Kim, Naksup

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Kish, Fred

    North Carolina State University

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Klink, Gerhard

    • Heterointegration Technologies for High Frequency Modules Based on Film Substrates

      Karlheinz Bock
      Erwin Yacoub-George
      Henry Wolf
      Gerhard Klink
      Download Paper

  • Ko, Tin

    • How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation

      Susie Ross
      Tin Ko
      Jianli Fu
      Hongxiao Shao
      Download Paper

  • Kojima, Toshikazu

    • Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs

      Md. Tanvir Hasan
      Toshikazu Kojima
      Hirokuni Tokuda, University of Fukui
      Download Paper

  • Kosugi, Toshihiko

    • Wafer-level Backside Process Technology for Forming High-density VIAs and Backside Metal Patterning for 50-µm-thick InP Substrate

      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Toshihiko Kosugi
      Download Paper

  • Krause, Joshua

    • Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production

      Joseph Smolko
      Colin Whelan
      Christopher Macdonald
      Joshua Krause
      Bradley Mikesell
      Michael Benedek
      Download Paper

  • Krishnamoorthy, Sriram

    • Interfacial Charge Properties of ALD/III-Nitride Interfaces

      Ting-Hsiang Hung
      Michele Esposto
      Digbijoy Neelim Nath
      Sriram Krishnamoorthy
      Download Paper

  • Krishnan, Balakrishnan

    Papasouliotis, Veeco

    • MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon

      Jie Su, Veeco Instruments
      Hongwei Li
      Seungjae Lee
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Dong Lee
      George Papasouliotis
      Download Paper

  • Krüger, O.

    • Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching

      K. Y. Osipov, Ferdinand-Braun-Institut
      W. John
      N. Kemf, Ferdinand-Braun-Institut
      S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
      P. Kurpas, Ferdinand-Braun-Institut
      M. Matalla
      O. Krüger
      Download Paper

  • Kurpas, P.

    Ferdinand-Braun-Institut

  • L. Pleumeekers, Jacco

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Lai, Margherita

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Lal, Vikrant

    Infinera Corporation

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • LaRoche, Jeffrey

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Lee, C.

    • Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-µm GaN on SiC HEMT Process

      C. Della-Morrow
      C. Lee
      K. Salzman
      Download Paper

  • Lee, Chien-Ping

    • InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect

      Nick GM Tao
      Chien-Ping Lee
      Download Paper

  • Lee, Dong

    • MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon

      Jie Su, Veeco Instruments
      Hongwei Li
      Seungjae Lee
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Dong Lee
      George Papasouliotis
      Download Paper

  • Lee, Sangmin

    Wavice Inc.

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

  • Lee, Seungjae

    • MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon

      Jie Su, Veeco Instruments
      Hongwei Li
      Seungjae Lee
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Dong Lee
      George Papasouliotis
      Download Paper

  • Lee, Yi-Che

    Georgia Institute of Technology

  • Letaw, Jeff

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Li, Hongwei

    • MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon

      Jie Su, Veeco Instruments
      Hongwei Li
      Seungjae Lee
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Dong Lee
      George Papasouliotis
      Download Paper

  • Lidow, Alex

    • Emerging Applications for GaN Transistors

      David Reusch
      Alex Lidow
      Johan Strydom
      Michael de Rooij
      Download Paper

  • Lin, Cheng-Kuo

    WIN Semiconductors Corp

  • Liu, Hui

    • Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications

      Tertius Rivers
      Corey Nevers, Qorvo, Inc
      Chi-hing Choi
      Hui Liu
      Download Paper

  • Liu, Michael

    • Improvement in enhanced spontaneous emission of Resonant Cavity Light Emitting Transistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector

      Mong-Kai Wu
      Michael Liu
      Download Paper

  • Liu, Paul

    Infinera Corporation

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Liu, Shenghou

    Xiamen San'an Integrated Circuit Co., Ltd.

  • Lostetter, Alex

    • High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules

      Ty McNutt
      Zach Cole
      Bret Whitaker
      Adam Barkley, Wolfspeed, a Cree Company
      Alex Lostetter
      Download Paper

  • M. Wood, Simon

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • Macdonald, Christopher

    • Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production

      Joseph Smolko
      Colin Whelan
      Christopher Macdonald
      Joshua Krause
      Bradley Mikesell
      Michael Benedek
      Download Paper

  • Marsh, Phil

    • Real-time Validation of Probe Contact Quality in GaAs PCM Testing

      Martin J. Brophy, Avago Technologies
      Phil Marsh
      Anthony Martinkus
      Download Paper

  • Martinkus, Anthony

    • Real-time Validation of Probe Contact Quality in GaAs PCM Testing

      Martin J. Brophy, Avago Technologies
      Phil Marsh
      Anthony Martinkus
      Download Paper

  • Mason, J.

    Northrop Grumman (MS), Linthicum, MD

    • The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB

      J. Parke, Northrop Grumman (MS), Linthicum, MD
      A. Gupta
      J. Mason, Northrop Grumman (MS), Linthicum, MD
      K. Renaldo, Northrop Grumman (MS), Linthicum, MD
      Download Paper

  • Mason, Jerod

    • Ultra Fast Switching Speed FET Technology Development

      Jerod Mason
      Guoliang Zhou, Skyworks Solutions, Inc.
      Joe Bulger
      Jay Yang
      David Petzold
      Dylan Bartle, Skyworks Solutions Inc.
      Download Paper

  • Matalla, M.

    • Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching

      K. Y. Osipov, Ferdinand-Braun-Institut
      W. John
      N. Kemf, Ferdinand-Braun-Institut
      S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
      P. Kurpas, Ferdinand-Braun-Institut
      M. Matalla
      O. Krüger
      Download Paper

  • Matthias, T.

    EV Group

    • Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications

      T. Uhrmann, EV Group
      T. Matthias, EV Group
      T. Glinsner
      V. Dragoi, EV Group
      T. Plach
      E. Pabo
      Download Paper

  • McClymonds, James

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • McNutt, Ty

    • High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules

      Ty McNutt
      Zach Cole
      Bret Whitaker
      Adam Barkley, Wolfspeed, a Cree Company
      Alex Lostetter
      Download Paper

  • Mikesell, Bradley

    • Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production

      Joseph Smolko
      Colin Whelan
      Christopher Macdonald
      Joshua Krause
      Bradley Mikesell
      Michael Benedek
      Download Paper

  • Missey, Mark

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Motoyama, S.

    Samco Inc.

    • Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      S. Motoyama, Samco Inc.
      O. Tsuji
      Download Paper

  • Murthy, Sanjeev

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Muthiah, Ranjani

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Nagarajan, Radhakrishnan

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Nakamura, Shuji

    • The Latest Progress of Nitride-based Visible LEDs and Laser diodes

      Shuji Nakamura
      University of California
      Download Paper

  • Namishia, Dan

    Wolfspeed | A Cree Company

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Neelim Nath, Digbijoy

    • Interfacial Charge Properties of ALD/III-Nitride Interfaces

      Ting-Hsiang Hung
      Michele Esposto
      Digbijoy Neelim Nath
      Sriram Krishnamoorthy
      Download Paper

  • Nevers, Corey

    Qorvo, Inc

    • Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications

      Tertius Rivers
      Corey Nevers, Qorvo, Inc
      Chi-hing Choi
      Hui Liu
      Download Paper

  • Nguyen, Bang

    Qorvo

    • Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling

      Xiaokang Huang, Qorvo
      Liping Zhu
      Bang Nguyen, Qorvo
      Van Tran, Qorvo
      Harold Isom, Qorvo
      Download Paper

  • Nishimiya, T.

    Samco Inc.

    • Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      S. Motoyama, Samco Inc.
      O. Tsuji
      Download Paper

  • Nishizawa, Koichiro

    Mitsubishi Electric Corporation

  • of California, University

    • The Latest Progress of Nitride-based Visible LEDs and Laser diodes

      Shuji Nakamura
      University of California
      Download Paper

  • Ogiya, H.

    Samco Inc.

    • Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      S. Motoyama, Samco Inc.
      O. Tsuji
      Download Paper

  • P. Schneider, Richard

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Pabo, E.

    • Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications

      T. Uhrmann, EV Group
      T. Matthias, EV Group
      T. Glinsner
      V. Dragoi, EV Group
      T. Plach
      E. Pabo
      Download Paper

  • Papasouliotis, George

    • MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon

      Jie Su, Veeco Instruments
      Hongwei Li
      Seungjae Lee
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Dong Lee
      George Papasouliotis
      Download Paper

  • Parke, J.

    Northrop Grumman (MS), Linthicum, MD

    • The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB

      J. Parke, Northrop Grumman (MS), Linthicum, MD
      A. Gupta
      J. Mason, Northrop Grumman (MS), Linthicum, MD
      K. Renaldo, Northrop Grumman (MS), Linthicum, MD
      Download Paper

  • Pelzel, Rodney

    IQE, Cardiff, UK

    • A Comparison of MOVPE and MBE Growth Technologies for III-V Epitaxial Structures

      Rodney Pelzel, IQE, Cardiff, UK
      Download Paper

  • Petzold, David

    • Ultra Fast Switching Speed FET Technology Development

      Jerod Mason
      Guoliang Zhou, Skyworks Solutions, Inc.
      Joe Bulger
      Jay Yang
      David Petzold
      Dylan Bartle, Skyworks Solutions Inc.
      Download Paper

  • Pihlaja, Douglas

    • Real Time Dynamic Application of Part Average Testing (PAT) at Final Test

      Douglas Pihlaja
      Download Paper

  • Plach, T.

    • Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications

      T. Uhrmann, EV Group
      T. Matthias, EV Group
      T. Glinsner
      V. Dragoi, EV Group
      T. Plach
      E. Pabo
      Download Paper

  • Pribble, Bill

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • Punsalan, David

    • Automated Skiplot Sampling for Photoresist Thickness Measurement

      David Punsalan
      Donald Pursley
      Christopher Roper
      Download Paper

  • Pursley, Donald

    • Automated Skiplot Sampling for Photoresist Thickness Measurement

      David Punsalan
      Donald Pursley
      Christopher Roper
      Download Paper

  • Quick, Keith

    vago Technologies, Keithley Instruments, Inc.

    • Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps

      Martin J. Brophy, Avago Technologies
      Chin-Shun Chen
      Keith Quick, vago Technologies, Keithley Instruments, Inc.
      Download Paper

  • Radulescu, Fabian

    Radulescu LLP

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • Renaldo, K.

    Northrop Grumman (MS), Linthicum, MD

    • The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB

      J. Parke, Northrop Grumman (MS), Linthicum, MD
      A. Gupta
      J. Mason, Northrop Grumman (MS), Linthicum, MD
      K. Renaldo, Northrop Grumman (MS), Linthicum, MD
      Download Paper

  • Reusch, David

    • Emerging Applications for GaN Transistors

      David Reusch
      Alex Lidow
      Johan Strydom
      Michael de Rooij
      Download Paper

  • Ring, Zoltan

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Rivers, Tertius

    • Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications

      Tertius Rivers
      Corey Nevers, Qorvo, Inc
      Chi-hing Choi
      Hui Liu
      Download Paper

  • Roper, Christopher

    • Automated Skiplot Sampling for Photoresist Thickness Measurement

      David Punsalan
      Donald Pursley
      Christopher Roper
      Download Paper

  • Ross, Susie

    • How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation

      Susie Ross
      Tin Ko
      Jianli Fu
      Hongxiao Shao
      Download Paper

  • Rossi, Jon

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Roussel, Philippe

    • How GaN-on-Si Could Disrupt the Current Equilibrium of the Booming LED Industry

      Philippe Roussel
      Download Paper

  • S. Witham, Howard

    • Challenges of Short Lifecycle Commercial Products in Compound Semiconductor Manufacturing

      Howard S. Witham
      Download Paper

  • Salzman, K.

    • Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-µm GaN on SiC HEMT Process

      C. Della-Morrow
      C. Lee
      K. Salzman
      Download Paper

  • Shao, Hongxiao

    • How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation

      Susie Ross
      Tin Ko
      Jianli Fu
      Hongxiao Shao
      Download Paper

  • Sheppard, Scott

    Wolfspeed | A Cree Company

    • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

      Ryan Fury
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey B. Barner
      Bill Pribble
      Jeremy Fisher, Wolfspeed | A Cree Company
      Donald A. Gajewski
      Fabian Radulescu, Radulescu LLP
      Helmut Hagleitner
      Dan Namishia, Wolfspeed | A Cree Company
      Zoltan Ring
      Jennifer Gao, Wolfspeed | A Cree Company
      Sangmin Lee, Wavice Inc.
      Download Paper

  • Shiga, Toshihiko

    Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.

    • Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization of GaAs devices

      Daisuke Tsunami
      Koichiro Nishizawa, Mitsubishi Electric Corporation
      Toshihiko Shiga, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Download Paper

  • Shin, Jae

    • Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits

      Eric Hall
      Jae Shin
      Gregory Fish
      Download Paper

  • Smith, Kurt

    • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Hoke
      David Altman
      James McClymonds
      Paul Alcorn
      Kurt Smith
      Eduardo Chumbes
      Jeff Letaw
      Download Paper

  • Smolko, Joseph

    • Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production

      Joseph Smolko
      Colin Whelan
      Christopher Macdonald
      Joshua Krause
      Bradley Mikesell
      Michael Benedek
      Download Paper

  • Stokes, P.

    • Bulk Acoustic Wave Technology Advances

      G. Fattinger
      R. Aigner
      P. Stokes
      A. Volatier
      F. Dumont
      Download Paper

  • Strydom, Johan

    • Emerging Applications for GaN Transistors

      David Reusch
      Alex Lidow
      Johan Strydom
      Michael de Rooij
      Download Paper

  • Strzelecka, Eva

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Studenkov, Pavel

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Su, Jie

    Veeco Instruments

    • MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon

      Jie Su, Veeco Instruments
      Hongwei Li
      Seungjae Lee
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Dong Lee
      George Papasouliotis
      Download Paper

  • Suarez, Jose

    • Back Metal Optimization for PbSn Die Attach Assembly

      Jose Suarez
      Jason Fender
      Download Paper

  • Syu, Rong-Hao

    • Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications

      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Rong-Hao Syu
      Yu-Ling Chen
      Wen-Fu Yu
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Download Paper

  • T. Sheppard, Scott

    • Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity

      Sangmin Lee, Wavice Inc.
      Tim Kennedy
      Christer Hallin
      Helder Antunes
      Brian Fetzer
      Scott T. Sheppard
      Al Burk, Wolfspeed, A Cree Company
      Don A. Gajewski
      Download Paper

    • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

      Simon M. Wood
      Scott T. Sheppard
      Fabian Radulescu, Radulescu LLP
      Don A. Gajewski
      Bill Pribble
      Donald Farrell
      Ulf Andre Jeffrey B. Barner
      Download Paper

  • Tang, Zhikai

    The Hong Kong University of Science and Technology

  • Tanvir Hasan, Md.

    • Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs

      Md. Tanvir Hasan
      Toshikazu Kojima
      Hirokuni Tokuda, University of Fukui
      Download Paper

  • Thakkar, Nirav

    Einnosys Technologies

    • Factory Automation for Overall Fab Efficiency

      Nirav Thakkar, Einnosys Technologies
      Download Paper

  • Thies, A.

    Ferdinand-Braun-Institute (FBH)

    • Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride

      A. Thies, Ferdinand-Braun-Institute (FBH)
      N. Kemf, Ferdinand-Braun-Institut
      S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
      Download Paper

  • Tokuda, Hirokuni

    University of Fukui

  • Tolstikhin, Valery

    • Multi-Guide Vertical Integration in InP – A Regrowth-Free PIC Technology for Optical Communications

      Valery Tolstikhin
      Download Paper

  • Tran, Van

    Qorvo

    • Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling

      Xiaokang Huang, Qorvo
      Liping Zhu
      Bang Nguyen, Qorvo
      Van Tran, Qorvo
      Harold Isom, Qorvo
      Download Paper

  • Tsai, Shu-Hsiao

    WIN Semiconductors Corp

  • Tsuji, O.

    • Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching

      H. Ogiya, Samco Inc.
      T. Nishimiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      S. Motoyama, Samco Inc.
      O. Tsuji
      Download Paper

  • Tsunami, Daisuke

    • Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization of GaAs devices

      Daisuke Tsunami
      Koichiro Nishizawa, Mitsubishi Electric Corporation
      Toshihiko Shiga, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Download Paper

  • Tsutsumi, Takuya

    QSI, Cheon-An, Kyunggi-do, 31044, South Korea

    • Wafer-level Backside Process Technology for Forming High-density VIAs and Backside Metal Patterning for 50-µm-thick InP Substrate

      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Toshihiko Kosugi
      Download Paper

  • Uhrmann, T.

    EV Group

    • Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications

      T. Uhrmann, EV Group
      T. Matthias, EV Group
      T. Glinsner
      V. Dragoi, EV Group
      T. Plach
      E. Pabo
      Download Paper

  • Verma, Amit

    • Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire

      Pei Zhao
      Amit Verma
      Jai Verma
      Download Paper

  • Verma, Jai

    • Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire

      Pei Zhao
      Amit Verma
      Jai Verma
      Download Paper

  • Volatier, A.

    • Bulk Acoustic Wave Technology Advances

      G. Fattinger
      R. Aigner
      P. Stokes
      A. Volatier
      F. Dumont
      Download Paper

  • W. Brindza, David

    • Challenges of Equipment Support in a Factory with a Diverse Multigenerational Toolset

      David W. Brindza
      Travis A. Abshere
      Download Paper

  • W. Evans, Peter

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • W. Johnson, Christopher

    • Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry

      Kenneth D. Mackenzie
      David J. Johnson
      Christopher W. Johnson
      Download Paper

  • Wang, Pi-Hsia

    • Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process

      Hsiu-Chen Chang
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Tim Hsiao
      Steven Chou
      C. Chen, Momentive Technologies
      Pi-Hsia Wang
      Download Paper

  • Wang, Wei-Chou

    WIN Semiconductors Corp.

  • Wang, Wen-Kai

    WIN Semiconductors Corp.

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Wei, Yi-Feng

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Welter, Jason

    • Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control

      Lesley Cheema
      Jason Welter
      Nicolas Awad
      Download Paper

  • Weng, Ming-Hung

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production

      Wei-Chou Wang, WIN Semiconductors Corp.
      Chia-Hao Chen, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Willie Huang
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Michael Casbon
      Paul J. Tasker
      Wen-Kai Wang, WIN Semiconductors Corp.
      I-Te Cho, WIN Semiconductors Corp.
      Download Paper

  • Whelan, Colin

    • Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production

      Joseph Smolko
      Colin Whelan
      Christopher Macdonald
      Joshua Krause
      Bradley Mikesell
      Michael Benedek
      Download Paper

  • Whitaker, Bret

    • High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules

      Ty McNutt
      Zach Cole
      Bret Whitaker
      Adam Barkley, Wolfspeed, a Cree Company
      Alex Lostetter
      Download Paper

  • Williams, Wayne

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Wolf, Henry

    • Heterointegration Technologies for High Frequency Modules Based on Film Substrates

      Karlheinz Bock
      Erwin Yacoub-George
      Henry Wolf
      Gerhard Klink
      Download Paper

  • Wu, Mong-Kai

    • Improvement in enhanced spontaneous emission of Resonant Cavity Light Emitting Transistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector

      Mong-Kai Wu
      Michael Liu
      Download Paper

  • Würfl, J.

    Ferdinand-Braun-Institut (FBH)

  • Y. Osipov, K.

    Ferdinand-Braun-Institut

  • Yacoub-George, Erwin

    • Heterointegration Technologies for High Frequency Modules Based on Film Substrates

      Karlheinz Bock
      Erwin Yacoub-George
      Henry Wolf
      Gerhard Klink
      Download Paper

  • Yang, Jay

    • Ultra Fast Switching Speed FET Technology Development

      Jerod Mason
      Guoliang Zhou, Skyworks Solutions, Inc.
      Joe Bulger
      Jay Yang
      David Petzold
      Dylan Bartle, Skyworks Solutions Inc.
      Download Paper

  • Yap, Kuan-Pei

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper

  • Yu, Wen-Fu

    • Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications

      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Rong-Hao Syu
      Yu-Ling Chen
      Wen-Fu Yu
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Download Paper

  • Zampardi, Peter J.

    Qorvo, Inc.

    • Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments

      Peter J. Zampardi, Qorvo, Inc.
      Cristian Cismaru, Skyworks Solutions, Inc.
      Hal Banbrook
      Download Paper

  • Zhao, Pei

    • Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire

      Pei Zhao
      Amit Verma
      Jai Verma
      Download Paper

  • Zhao, Yuning

    • Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing III-V Heterostructure Devices

      Yuning Zhao
      Patrick Fay, University of Notre Dame
      Download Paper

  • Zhou, Guoliang

    Skyworks Solutions, Inc.

  • Zhu, Liping

    • Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling

      Xiaokang Huang, Qorvo
      Liping Zhu
      Bang Nguyen, Qorvo
      Van Tran, Qorvo
      Harold Isom, Qorvo
      Download Paper

  • Zhytnytska, R.

    Ferdinand-Braun-Institut

  • Ziari, Mehrdad

    Infinera Corporation

    • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

      Richard P. Schneider
      Jr., Naval Research Laboratory
      Jacco L. Pleumeekers
      Damien J. H. Lambert
      Peter W. Evans
      Andrew G. Dentai
      Paul Liu, Infinera Corporation
      Jon Rossi
      Scott Craig
      Margherita Lai
      Vikrant Lal, Infinera Corporation
      Naksup Kim
      Eva Strzelecka
      Pavel Studenkov
      Adam James, Infinera Corporation
      Scott Corzine
      Kuan-Pei Yap
      Peter Debackere, Infinera Corporation
      Shashank Agashe
      Jeffrey Glick
      Christopher Hill
      Quisheng Chen
      Wayne Williams
      Sanjeev Murthy
      Ranjani Muthiah
      Mark Missey
      Scott DeMars
      Mehrdad Ziari, Infinera Corporation
      Masaki Kato
      Radhakrishnan Nagarajan
      Arnold Chen
      Sheila Hurtt
      Fred Kish, North Carolina State University
      Download Paper