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A. Abshere, Travis
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Challenges of Equipment Support in a Factory with a Diverse Multigenerational Toolset
David W. BrindzaTravis A. Abshere
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A. Chevtchenko, S.
Ferdinand-Braun-Institut -
A. Gajewski, Don
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Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski -
An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
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A. Gajewski, Donald
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GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
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A. Ledford, Keri
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Ag/Diamond Composite Shims for HPA Thermal Management
Jason H. NadlerKeri A. Ledford
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Agashe, Shashank
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Aigner, R.
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Bulk Acoustic Wave Technology Advances
G. FattingerR. AignerP. StokesA. VolatierF. Dumont
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Alcorn, Paul
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Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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Altman, David
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Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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Andre Jeffrey B. Barner, Ulf
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An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
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Antunes, Helder
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Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski
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Awad, Nicolas
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Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control
Lesley CheemaJason WelterNicolas Awad
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B. Barner, Jeffrey
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GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
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Banbrook, Hal
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Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments
Peter J. Zampardi, Qorvo, Inc.Cristian Cismaru, Skyworks Solutions, Inc.Hal Banbrook
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Barkley, Adam
Wolfspeed, a Cree Company-
High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules
Ty McNuttZach ColeBret WhitakerAdam Barkley, Wolfspeed, a Cree CompanyAlex Lostetter
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Bartle, Dylan
Skyworks Solutions Inc.-
Ultra Fast Switching Speed FET Technology Development
Jerod MasonGuoliang Zhou, Skyworks Solutions, Inc.Joe BulgerJay YangDavid PetzoldDylan Bartle, Skyworks Solutions Inc.
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Bédard, Jean-François
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Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices
Jean-François BédardJan CampbellMartin Ivie
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Benedek, Michael
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Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph SmolkoColin WhelanChristopher MacdonaldJoshua KrauseBradley MikesellMichael Benedek
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Bengtsson, O.
Ferdinand-Braun-Institut -
Bock, Karlheinz
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Heterointegration Technologies for High Frequency Modules Based on Film Substrates
Karlheinz BockErwin Yacoub-GeorgeHenry WolfGerhard Klink
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Bulger, Joe
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Ultra Fast Switching Speed FET Technology Development
Jerod MasonGuoliang Zhou, Skyworks Solutions, Inc.Joe BulgerJay YangDavid PetzoldDylan Bartle, Skyworks Solutions Inc.
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Burk, Al
Wolfspeed, A Cree Company-
Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski
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C. Chao, P.
MEC, BAE Systems, IQE-
A New High Power GaN HEMT with Low Temperature Bonded Diamond Substrate Technology
P. C. Chao, MEC, BAE Systems, IQE
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Campbell, Jan
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Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach
Jan CampbellMartin IvieQizhi He -
Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices
Jean-François BédardJan CampbellMartin Ivie -
Back to the Future: How Implementing Retro-Style Processing Can be an Improvement
Martin IvieJan CampbellQizhi He
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Casbon, Michael
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Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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Cerio, Frank
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Development of PVD-AlN Buffer Process for GaN-on-Si
Frank CerioArindom DattaAdrian DevasahayamBoris Druz
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Chang, Hsiu-Chen
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Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen ChangShu-Hsiao Tsai, WIN Semiconductors CorpCheng-Kuo Lin, WIN Semiconductors CorpTim HsiaoSteven ChouC. Chen, Momentive TechnologiesPi-Hsia Wang
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Chang, Ricky
I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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Cheema, Lesley
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Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control
Lesley CheemaJason WelterNicolas Awad
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Chen, Arnold
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Chen, C.
Momentive Technologies-
Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen ChangShu-Hsiao Tsai, WIN Semiconductors CorpCheng-Kuo Lin, WIN Semiconductors CorpTim HsiaoSteven ChouC. Chen, Momentive TechnologiesPi-Hsia Wang
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Chen, Chia-Hao
WIN Semiconductors Corp-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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Chen, Chin-Shun
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Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps
Martin J. Brophy, Avago TechnologiesChin-Shun ChenKeith Quick, vago Technologies, Keithley Instruments, Inc.
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Chen, Quisheng
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Chen, Yu-Ling
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Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications
Shu-Hsiao Tsai, WIN Semiconductors CorpRong-Hao SyuYu-Ling ChenWen-Fu YuCheng-Kuo Lin, WIN Semiconductors Corp
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Cheng, Kezia
Skyworks Solutions Inc.-
High Precision Thin Metal Film Measurement by Optical Transmission
Kezia Cheng, Skyworks Solutions Inc.
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Cho, I-Te
WIN Semiconductors Corp. -
Choi, Chi-hing
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Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications
Tertius RiversCorey Nevers, Qorvo, IncChi-hing ChoiHui Liu
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Chou, Steven
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Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen ChangShu-Hsiao Tsai, WIN Semiconductors CorpCheng-Kuo Lin, WIN Semiconductors CorpTim HsiaoSteven ChouC. Chen, Momentive TechnologiesPi-Hsia Wang
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Christou, A.
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Process-Reliability Relationships in GaN and GaAs Field Effect Transistors and HFETs
A. Christou
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Chumbes, Eduardo
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Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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Cismaru, Cristian
Skyworks Solutions, Inc.-
Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments
Peter J. Zampardi, Qorvo, Inc.Cristian Cismaru, Skyworks Solutions, Inc.Hal Banbrook
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Cole, Zach
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High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules
Ty McNuttZach ColeBret WhitakerAdam Barkley, Wolfspeed, a Cree CompanyAlex Lostetter
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Colin J. Humphreys, Sir
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Low-Cost High-Efficiency GaN LEDs on Large-Area Silicon Substrates
Sir Colin J. Humphreys
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Combe, Suzanne
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Thick Film Photo Resist Application Spun on Application v. Dry Film Lamination
Suzanne Combe
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Corzine, Scott
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Cova, Paolo
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GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling
Nicola DelmontePaolo Cova
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Craig, Scott
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Curtis, Jerry
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A Co-operative Business Model for Advancing Compound Semiconductor Technology
Jerry Curtis
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D. Mackenzie, Kenneth
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Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry
Kenneth D. MackenzieDavid J. JohnsonChristopher W. Johnson
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Dallesasse, J.M.
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The Discovery of III-V Oxidation, Device Progress, and Application to Vertical-Cavity Surface-Emitting Lasers
J.M. Dallesasse
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Danzilio, David
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GaAs Foundry: Challenges and Future
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Datta, Arindom
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Development of PVD-AlN Buffer Process for GaN-on-Si
Frank CerioArindom DattaAdrian DevasahayamBoris Druz
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de Rooij, Michael
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Emerging Applications for GaN Transistors
David ReuschAlex LidowJohan StrydomMichael de Rooij
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Debackere, Peter
Infinera Corporation-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Della-Morrow, C.
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Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-µm GaN on SiC HEMT Process
C. Della-MorrowC. LeeK. Salzman
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Delmonte, Nicola
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GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling
Nicola DelmontePaolo Cova
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DeMars, Scott
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Devasahayam, Adrian
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Development of PVD-AlN Buffer Process for GaN-on-Si
Frank CerioArindom DattaAdrian DevasahayamBoris Druz
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Dragoi, V.
EV Group-
Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, EV GroupT. Matthias, EV GroupT. GlinsnerV. Dragoi, EV GroupT. PlachE. Pabo
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Druz, Boris
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Development of PVD-AlN Buffer Process for GaN-on-Si
Frank CerioArindom DattaAdrian DevasahayamBoris Druz
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Du, Jhih-Han
WIN Semiconductors Corp -
Dumont, F.
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Bulk Acoustic Wave Technology Advances
G. FattingerR. AignerP. StokesA. VolatierF. Dumont
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Eddy, C.R.
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Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
C.R. Eddy
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Engel-Herbert, R.
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Correct Determination of Trap Densities at High-k/III-V Interfaces
R. Engel-Herbert
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Esposto, Michele
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Interfacial Charge Properties of ALD/III-Nitride Interfaces
Ting-Hsiang HungMichele EspostoDigbijoy Neelim NathSriram Krishnamoorthy
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Farrell, Donald
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An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
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Fattinger, G.
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Bulk Acoustic Wave Technology Advances
G. FattingerR. AignerP. StokesA. VolatierF. Dumont
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Fay, Patrick
University of Notre Dame-
Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing III-V Heterostructure Devices
Yuning ZhaoPatrick Fay, University of Notre Dame
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Fender, Jason
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Back Metal Optimization for PbSn Die Attach Assembly
Jose SuarezJason Fender
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Fetzer, Brian
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Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski
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Fish, Gregory
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Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits
Eric HallJae ShinGregory Fish
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Fisher, Jeremy
Wolfspeed | A Cree Company-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
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Fu, Jianli
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How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation
Susie RossTin KoJianli FuHongxiao Shao
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Fury, Ryan
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GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
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G. Dentai, Andrew
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Gao, Jennifer
Wolfspeed | A Cree Company-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
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Glick, Jeffrey
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Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Glinsner, T.
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Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, EV GroupT. Matthias, EV GroupT. GlinsnerV. Dragoi, EV GroupT. PlachE. Pabo
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GM Tao, Nick
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InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect
Nick GM TaoChien-Ping Lee
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Gupta, A.
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The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB
J. Parke, Northrop Grumman (MS), Linthicum, MDA. GuptaJ. Mason, Northrop Grumman (MS), Linthicum, MDK. Renaldo, Northrop Grumman (MS), Linthicum, MD
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H. Nadler, Jason
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Ag/Diamond Composite Shims for HPA Thermal Management
Jason H. NadlerKeri A. Ledford
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Hagleitner, Helmut
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GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
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Hall, Eric
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Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits
Eric HallJae ShinGregory Fish
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Hallin, Christer
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Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski
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Harris, Mike
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GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned Arrays
Mike Harris
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He, Qizhi
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Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach
Jan CampbellMartin IvieQizhi He -
Back to the Future: How Implementing Retro-Style Processing Can be an Improvement
Martin IvieJan CampbellQizhi He
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Heinrich, W.
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BCB Encapsulation for High Power AlGaN/GaN-HFET Technology
P. Kurpas, Ferdinand-Braun-InstitutO. Bengtsson, Ferdinand-Braun-InstitutS. A. Chevtchenko, Ferdinand-Braun-InstitutR. Zhytnytska, Ferdinand-Braun-InstitutW. HeinrichJ. Würfl, Ferdinand-Braun-Institut
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Higham, Eric
Strategy Analytics-
GaAs Industry Overview and Forecast: 2011 – 2016 Abstract
Eric Higham, Strategy Analytics
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Hill, Christopher
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Hiramoto, M.
Samco Inc.-
Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching
H. Ogiya, Samco Inc.T. Nishimiya, Samco Inc.M. Hiramoto, Samco Inc.S. Motoyama, Samco Inc.O. Tsuji
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Hoke, William
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Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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Hsiao, Tim
-
Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen ChangShu-Hsiao Tsai, WIN Semiconductors CorpCheng-Kuo Lin, WIN Semiconductors CorpTim HsiaoSteven ChouC. Chen, Momentive TechnologiesPi-Hsia Wang
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Hsieh, Stanley
I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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Huang, Shih-Hui
WIN Semiconductors Corp-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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Huang, Willie
-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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Huang, Xiaokang
Qorvo -
Huang*, Sen
Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science-
600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
Zhikai Tang, The Hong Kong University of Science and TechnologySen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceQimeng Jiang, The Hong Kong University of Science and TechnologyShenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
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Hung, Ting-Hsiang
-
Interfacial Charge Properties of ALD/III-Nitride Interfaces
Ting-Hsiang HungMichele EspostoDigbijoy Neelim NathSriram Krishnamoorthy
-
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Hurtt, Sheila
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Isom, Harold
Qorvo -
Ivie, Martin
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Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach
Jan CampbellMartin IvieQizhi He -
Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices
Jean-François BédardJan CampbellMartin Ivie -
Back to the Future: How Implementing Retro-Style Processing Can be an Improvement
Martin IvieJan CampbellQizhi He
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J. Brophy, Martin
Avago Technologies -
J. H. Lambert, Damien
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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J. Johnson, David
-
Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry
Kenneth D. MackenzieDavid J. JohnsonChristopher W. Johnson
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J. Tasker, Paul
-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
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James, Adam
Infinera Corporation-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Jiang, Qimeng
The Hong Kong University of Science and Technology -
John, W.
-
Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching
K. Y. Osipov, Ferdinand-Braun-InstitutW. JohnN. Kemf, Ferdinand-Braun-InstitutS. A. Chevtchenko, Ferdinand-Braun-InstitutP. Kurpas, Ferdinand-Braun-InstitutM. MatallaO. Krüger
-
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Johnson, Klein
-
Non-850nm Vertical Cavity Laser Applications and Manufacturing Technology
Klein Johnson
-
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Jr.,
Naval Research Laboratory-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
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Kao, Tsung-Ting
Georgia Institute of Technology,-
A Study on Al2O3 Deposition by Atomic Layer Deposition for III-Nitride Metal-Insulator-Semiconductor Field Effect Transistors
Yi-Che Lee, Georgia Institute of TechnologyTsung-Ting Kao, Georgia Institute of Technology,
-
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Kato, Masaki
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Kemf, N.
Ferdinand-Braun-Institut -
Kennedy, Tim
-
Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski
-
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Khan, Asif
-
AlInGaN Based Deep Ultraviolet Light Emitting Diodes and Their Applications Technology
Asif Khan
-
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Kim, Naksup
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
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Kish, Fred
Infinera Corporation-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Klink, Gerhard
-
Heterointegration Technologies for High Frequency Modules Based on Film Substrates
Karlheinz BockErwin Yacoub-GeorgeHenry WolfGerhard Klink
-
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Ko, Tin
-
How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation
Susie RossTin KoJianli FuHongxiao Shao
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Kojima, Toshikazu
-
Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs
Md. Tanvir HasanToshikazu KojimaHirokuni Tokuda, University of Fukui
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Kosugi, Toshihiko
-
Wafer-level Backside Process Technology for Forming High-density VIAs and Backside Metal Patterning for 50-µm-thick InP Substrate
Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaToshihiko Kosugi
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Krause, Joshua
-
Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph SmolkoColin WhelanChristopher MacdonaldJoshua KrauseBradley MikesellMichael Benedek
-
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Krishnamoorthy, Sriram
-
Interfacial Charge Properties of ALD/III-Nitride Interfaces
Ting-Hsiang HungMichele EspostoDigbijoy Neelim NathSriram Krishnamoorthy
-
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Krishnan, Balakrishnan
Papasouliotis, Veeco-
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis
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Krüger, O.
-
Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching
K. Y. Osipov, Ferdinand-Braun-InstitutW. JohnN. Kemf, Ferdinand-Braun-InstitutS. A. Chevtchenko, Ferdinand-Braun-InstitutP. Kurpas, Ferdinand-Braun-InstitutM. MatallaO. Krüger
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-
Kurpas, P.
Ferdinand-Braun-Institut -
L. Pleumeekers, Jacco
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Lai, Margherita
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Lal, Vikrant
Infinera Corporation-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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LaRoche, Jeffrey
Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE-
Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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Lee, C.
-
Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-µm GaN on SiC HEMT Process
C. Della-MorrowC. LeeK. Salzman
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Lee, Chien-Ping
-
InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect
Nick GM TaoChien-Ping Lee
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Lee, Dong
-
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis
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Lee, Sangmin
Wavice Inc.-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc. -
Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski
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Lee, Seungjae
-
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis
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Lee, Yi-Che
Georgia Institute of Technology -
Letaw, Jeff
-
Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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Li, Hongwei
-
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis
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Lidow, Alex
-
Emerging Applications for GaN Transistors
David ReuschAlex LidowJohan StrydomMichael de Rooij
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Lin, Che-Kai
WIN Semiconductors Corp -
Lin, Cheng-Kuo
WIN Semiconductors Corp -
Liu, Hui
-
Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications
Tertius RiversCorey Nevers, Qorvo, IncChi-hing ChoiHui Liu
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Liu, Michael
-
Improvement in enhanced spontaneous emission of Resonant Cavity Light Emitting Transistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector
Mong-Kai WuMichael Liu
-
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Liu, Paul
Infinera Corporation-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Liu, Shenghou
Xiamen San'an Integrated Circuit Co., Ltd. -
Lostetter, Alex
-
High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules
Ty McNuttZach ColeBret WhitakerAdam Barkley, Wolfspeed, a Cree CompanyAlex Lostetter
-
-
M. Wood, Simon
-
An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
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Macdonald, Christopher
-
Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph SmolkoColin WhelanChristopher MacdonaldJoshua KrauseBradley MikesellMichael Benedek
-
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Marsh, Phil
-
Real-time Validation of Probe Contact Quality in GaAs PCM Testing
Martin J. Brophy, Avago TechnologiesPhil MarshAnthony Martinkus
-
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Martinkus, Anthony
-
Real-time Validation of Probe Contact Quality in GaAs PCM Testing
Martin J. Brophy, Avago TechnologiesPhil MarshAnthony Martinkus
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Mason, J.
Northrop Grumman (MS), Linthicum, MD-
The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB
J. Parke, Northrop Grumman (MS), Linthicum, MDA. GuptaJ. Mason, Northrop Grumman (MS), Linthicum, MDK. Renaldo, Northrop Grumman (MS), Linthicum, MD
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Mason, Jerod
-
Ultra Fast Switching Speed FET Technology Development
Jerod MasonGuoliang Zhou, Skyworks Solutions, Inc.Joe BulgerJay YangDavid PetzoldDylan Bartle, Skyworks Solutions Inc.
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Matalla, M.
-
Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching
K. Y. Osipov, Ferdinand-Braun-InstitutW. JohnN. Kemf, Ferdinand-Braun-InstitutS. A. Chevtchenko, Ferdinand-Braun-InstitutP. Kurpas, Ferdinand-Braun-InstitutM. MatallaO. Krüger
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-
Matthias, T.
EV Group-
Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, EV GroupT. Matthias, EV GroupT. GlinsnerV. Dragoi, EV GroupT. PlachE. Pabo
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McClymonds, James
-
Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
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McNutt, Ty
-
High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules
Ty McNuttZach ColeBret WhitakerAdam Barkley, Wolfspeed, a Cree CompanyAlex Lostetter
-
-
Mikesell, Bradley
-
Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph SmolkoColin WhelanChristopher MacdonaldJoshua KrauseBradley MikesellMichael Benedek
-
-
Missey, Mark
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Motoyama, S.
Samco Inc.-
Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching
H. Ogiya, Samco Inc.T. Nishimiya, Samco Inc.M. Hiramoto, Samco Inc.S. Motoyama, Samco Inc.O. Tsuji
-
-
Murthy, Sanjeev
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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Muthiah, Ranjani
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Nagarajan, Radhakrishnan
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Nakamura, Shuji
-
The Latest Progress of Nitride-based Visible LEDs and Laser diodes
Shuji NakamuraUniversity of California
-
-
Namishia, Dan
Wolfspeed | A Cree Company-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
-
-
Neelim Nath, Digbijoy
-
Interfacial Charge Properties of ALD/III-Nitride Interfaces
Ting-Hsiang HungMichele EspostoDigbijoy Neelim NathSriram Krishnamoorthy
-
-
Nevers, Corey
Qorvo, Inc-
Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications
Tertius RiversCorey Nevers, Qorvo, IncChi-hing ChoiHui Liu
-
-
Nguyen, Bang
Qorvo-
Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling
Xiaokang Huang, QorvoLiping ZhuBang Nguyen, QorvoVan Tran, QorvoHarold Isom, Qorvo
-
-
Nishimiya, T.
Samco Inc.-
Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching
H. Ogiya, Samco Inc.T. Nishimiya, Samco Inc.M. Hiramoto, Samco Inc.S. Motoyama, Samco Inc.O. Tsuji
-
-
Nishizawa, Koichiro
Mitsubishi Electric Corporation -
of California, University
-
The Latest Progress of Nitride-based Visible LEDs and Laser diodes
Shuji NakamuraUniversity of California
-
-
Ogiya, H.
Samco Inc.-
Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching
H. Ogiya, Samco Inc.T. Nishimiya, Samco Inc.M. Hiramoto, Samco Inc.S. Motoyama, Samco Inc.O. Tsuji
-
-
P. Schneider, Richard
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Pabo, E.
-
Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, EV GroupT. Matthias, EV GroupT. GlinsnerV. Dragoi, EV GroupT. PlachE. Pabo
-
-
Papasouliotis, George
-
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis
-
-
Parke, J.
Northrop Grumman (MS), Linthicum, MD-
The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB
J. Parke, Northrop Grumman (MS), Linthicum, MDA. GuptaJ. Mason, Northrop Grumman (MS), Linthicum, MDK. Renaldo, Northrop Grumman (MS), Linthicum, MD
-
-
Pelzel, Rodney
IQE, Cardiff, UK-
A Comparison of MOVPE and MBE Growth Technologies for III-V Epitaxial Structures
Rodney Pelzel, IQE, Cardiff, UK
-
-
Petzold, David
-
Ultra Fast Switching Speed FET Technology Development
Jerod MasonGuoliang Zhou, Skyworks Solutions, Inc.Joe BulgerJay YangDavid PetzoldDylan Bartle, Skyworks Solutions Inc.
-
-
Pihlaja, Douglas
-
Real Time Dynamic Application of Part Average Testing (PAT) at Final Test
Douglas Pihlaja
-
-
Plach, T.
-
Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, EV GroupT. Matthias, EV GroupT. GlinsnerV. Dragoi, EV GroupT. PlachE. Pabo
-
-
Pribble, Bill
-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc. -
An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
-
-
Punsalan, David
-
Automated Skiplot Sampling for Photoresist Thickness Measurement
David PunsalanDonald PursleyChristopher Roper
-
-
Pursley, Donald
-
Automated Skiplot Sampling for Photoresist Thickness Measurement
David PunsalanDonald PursleyChristopher Roper
-
-
Quick, Keith
vago Technologies, Keithley Instruments, Inc.-
Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps
Martin J. Brophy, Avago TechnologiesChin-Shun ChenKeith Quick, vago Technologies, Keithley Instruments, Inc.
-
-
Radulescu, Fabian
Wolfspeed | A Cree Company-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc. -
An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
-
-
Renaldo, K.
Northrop Grumman (MS), Linthicum, MD-
The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB
J. Parke, Northrop Grumman (MS), Linthicum, MDA. GuptaJ. Mason, Northrop Grumman (MS), Linthicum, MDK. Renaldo, Northrop Grumman (MS), Linthicum, MD
-
-
Reusch, David
-
Emerging Applications for GaN Transistors
David ReuschAlex LidowJohan StrydomMichael de Rooij
-
-
Ring, Zoltan
-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
-
-
Rivers, Tertius
-
Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications
Tertius RiversCorey Nevers, Qorvo, IncChi-hing ChoiHui Liu
-
-
Roper, Christopher
-
Automated Skiplot Sampling for Photoresist Thickness Measurement
David PunsalanDonald PursleyChristopher Roper
-
-
Ross, Susie
-
How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation
Susie RossTin KoJianli FuHongxiao Shao
-
-
Rossi, Jon
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Roussel, Philippe
-
How GaN-on-Si Could Disrupt the Current Equilibrium of the Booming LED Industry
Philippe Roussel
-
-
S. Witham, Howard
-
Challenges of Short Lifecycle Commercial Products in Compound Semiconductor Manufacturing
Howard S. Witham
-
-
Salzman, K.
-
Achieve Manufacturing Readiness Level 8 of high-power, high efficiency 0.25-µm GaN on SiC HEMT Process
C. Della-MorrowC. LeeK. Salzman
-
-
Shao, Hongxiao
-
How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation
Susie RossTin KoJianli FuHongxiao Shao
-
-
Sheppard, Scott
Wolfspeed | A Cree Company-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc.
-
-
Shiga, Toshihiko
Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.-
Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization of GaAs devices
Daisuke TsunamiKoichiro Nishizawa, Mitsubishi Electric CorporationToshihiko Shiga, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
-
-
Shin, Jae
-
Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits
Eric HallJae ShinGregory Fish
-
-
Smith, Kurt
-
Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam HokeDavid AltmanJames McClymondsPaul AlcornKurt SmithEduardo ChumbesJeff Letaw
-
-
Smolko, Joseph
-
Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph SmolkoColin WhelanChristopher MacdonaldJoshua KrauseBradley MikesellMichael Benedek
-
-
Stokes, P.
-
Bulk Acoustic Wave Technology Advances
G. FattingerR. AignerP. StokesA. VolatierF. Dumont
-
-
Strydom, Johan
-
Emerging Applications for GaN Transistors
David ReuschAlex LidowJohan StrydomMichael de Rooij
-
-
Strzelecka, Eva
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Studenkov, Pavel
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Su, Jie
Veeco Instruments-
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis
-
-
Suarez, Jose
-
Back Metal Optimization for PbSn Die Attach Assembly
Jose SuarezJason Fender
-
-
Syu, Rong-Hao
-
Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications
Shu-Hsiao Tsai, WIN Semiconductors CorpRong-Hao SyuYu-Ling ChenWen-Fu YuCheng-Kuo Lin, WIN Semiconductors Corp
-
-
T. Sheppard, Scott
-
Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Wavice Inc.Tim KennedyChrister HallinHelder AntunesBrian FetzerScott T. SheppardAl Burk, Wolfspeed, A Cree CompanyDon A. Gajewski -
An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner
-
-
Tang, Zhikai
The Hong Kong University of Science and Technology -
Tanvir Hasan, Md.
-
Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs
Md. Tanvir HasanToshikazu KojimaHirokuni Tokuda, University of Fukui
-
-
Thakkar, Nirav
-
Factory Automation for Overall Fab Efficiency
Nirav Thakkar
-
-
Thies, A.
1Ferdinand-Braun-Institut (FBH)-
Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride
A. Thies, 1Ferdinand-Braun-Institut (FBH)N. Kemf, Ferdinand-Braun-InstitutS. A. Chevtchenko, Ferdinand-Braun-Institut
-
-
Tokuda, Hirokuni
University of Fukui -
Tolstikhin, Valery
-
Multi-Guide Vertical Integration in InP – A Regrowth-Free PIC Technology for Optical Communications
Valery Tolstikhin
-
-
Tran, Van
Qorvo-
Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling
Xiaokang Huang, QorvoLiping ZhuBang Nguyen, QorvoVan Tran, QorvoHarold Isom, Qorvo
-
-
Tsai, Shu-Hsiao
WIN Semiconductors Corp -
Tsuji, O.
-
Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching
H. Ogiya, Samco Inc.T. Nishimiya, Samco Inc.M. Hiramoto, Samco Inc.S. Motoyama, Samco Inc.O. Tsuji
-
-
Tsunami, Daisuke
-
Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization of GaAs devices
Daisuke TsunamiKoichiro Nishizawa, Mitsubishi Electric CorporationToshihiko Shiga, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
-
-
Tsutsumi, Takuya
QSI, Cheon-An, Kyunggi-do, 31044, South Korea-
Wafer-level Backside Process Technology for Forming High-density VIAs and Backside Metal Patterning for 50-µm-thick InP Substrate
Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaToshihiko Kosugi
-
-
Uhrmann, T.
EV Group-
Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, EV GroupT. Matthias, EV GroupT. GlinsnerV. Dragoi, EV GroupT. PlachE. Pabo
-
-
Verma, Amit
-
Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire
Pei ZhaoAmit VermaJai Verma
-
-
Verma, Jai
-
Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire
Pei ZhaoAmit VermaJai Verma
-
-
Volatier, A.
-
Bulk Acoustic Wave Technology Advances
G. FattingerR. AignerP. StokesA. VolatierF. Dumont
-
-
W. Brindza, David
-
Challenges of Equipment Support in a Factory with a Diverse Multigenerational Toolset
David W. BrindzaTravis A. Abshere
-
-
W. Evans, Peter
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
W. Johnson, Christopher
-
Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry
Kenneth D. MackenzieDavid J. JohnsonChristopher W. Johnson
-
-
Wang, Pi-Hsia
-
Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen ChangShu-Hsiao Tsai, WIN Semiconductors CorpCheng-Kuo Lin, WIN Semiconductors CorpTim HsiaoSteven ChouC. Chen, Momentive TechnologiesPi-Hsia Wang
-
-
Wang, Wei-Chou
WIN Semiconductors Corp -
Wang, Wen-Kai
WIN Semiconductors Corp.-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
-
-
Wei, Yi-Feng
I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
-
-
Welter, Jason
-
Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control
Lesley CheemaJason WelterNicolas Awad
-
-
Weng, Ming-Hung
I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.-
Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, WIN Semiconductors CorpChia-Hao Chen, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpMing-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Che-Kai Lin, WIN Semiconductors CorpWillie HuangRicky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Shih-Hui Huang, WIN Semiconductors CorpYi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.Michael CasbonPaul J. TaskerWen-Kai Wang, WIN Semiconductors Corp.I-Te Cho, WIN Semiconductors Corp.
-
-
Whelan, Colin
-
Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph SmolkoColin WhelanChristopher MacdonaldJoshua KrauseBradley MikesellMichael Benedek
-
-
Whitaker, Bret
-
High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules
Ty McNuttZach ColeBret WhitakerAdam Barkley, Wolfspeed, a Cree CompanyAlex Lostetter
-
-
Williams, Wayne
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Wolf, Henry
-
Heterointegration Technologies for High Frequency Modules Based on Film Substrates
Karlheinz BockErwin Yacoub-GeorgeHenry WolfGerhard Klink
-
-
Wu, Mong-Kai
-
Improvement in enhanced spontaneous emission of Resonant Cavity Light Emitting Transistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector
Mong-Kai WuMichael Liu
-
-
Würfl, J.
Ferdinand-Braun-Institut -
Y. Osipov, K.
Ferdinand-Braun-Institut -
Yacoub-George, Erwin
-
Heterointegration Technologies for High Frequency Modules Based on Film Substrates
Karlheinz BockErwin Yacoub-GeorgeHenry WolfGerhard Klink
-
-
Yang, Jay
-
Ultra Fast Switching Speed FET Technology Development
Jerod MasonGuoliang Zhou, Skyworks Solutions, Inc.Joe BulgerJay YangDavid PetzoldDylan Bartle, Skyworks Solutions Inc.
-
-
Yap, Kuan-Pei
-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
-
-
Yu, Wen-Fu
-
Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications
Shu-Hsiao Tsai, WIN Semiconductors CorpRong-Hao SyuYu-Ling ChenWen-Fu YuCheng-Kuo Lin, WIN Semiconductors Corp
-
-
Zampardi, Peter J.
Qorvo, Inc.-
Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments
Peter J. Zampardi, Qorvo, Inc.Cristian Cismaru, Skyworks Solutions, Inc.Hal Banbrook
-
-
Zhao, Pei
-
Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire
Pei ZhaoAmit VermaJai Verma
-
-
Zhao, Yuning
-
Full-Wafer, Small-Area Via-Hole Fabrication Process Development for Indium-Bearing III-V Heterostructure Devices
Yuning ZhaoPatrick Fay, University of Notre Dame
-
-
Zhou, Guoliang
Skyworks Solutions, Inc. -
Zhu, Liping
-
Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling
Xiaokang Huang, QorvoLiping ZhuBang Nguyen, QorvoVan Tran, QorvoHarold Isom, Qorvo
-
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Zhytnytska, R.
Ferdinand-Braun-Institut -
Ziari, Mehrdad
Infinera Corporation-
Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. SchneiderJr., Naval Research LaboratoryJacco L. PleumeekersDamien J. H. LambertPeter W. EvansAndrew G. DentaiPaul Liu, Infinera CorporationJon RossiScott CraigMargherita LaiVikrant Lal, Infinera CorporationNaksup KimEva StrzeleckaPavel StudenkovAdam James, Infinera CorporationScott CorzineKuan-Pei YapPeter Debackere, Infinera CorporationShashank AgasheJeffrey GlickChristopher HillQuisheng ChenWayne WilliamsSanjeev MurthyRanjani MuthiahMark MisseyScott DeMarsMehrdad Ziari, Infinera CorporationMasaki KatoRadhakrishnan NagarajanArnold ChenSheila HurttFred Kish, Infinera Corporation
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