Abstracts are due October 31, 2021
  • Abrokwah, Jonathan

    Avago Technologies
    • 10a.4 Reduction in Current Leakage Fails Through an Improved Metal Lift-off Process

      Joe Hunter, Avago Technologies
      Jonathan Abrokwah, Avago Technologies
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    • 11.4 A SiN Passivation for Improved Moisture Reliability of Au Interconnect With Low-K BCB ILD

      Jonathan Abrokwah, Avago Technologies
      Nathan Perkins, Avago Technologies
      Scott Rumery, Avago Technologies
      Greg Halac, Avago Technologies
      Robert Long, Avago Technologies
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  • Afroz, Shamima

    Northrop Grumman
    • 6a.3 Reduction of Thin Film Stress-induced Micro-masking by Using Ti/Ni Hard Mask for High Power SiC Transistor Fabrication

      Shamima Afroz, Northrop Grumman
      Jason Thomen, Northrop Grumman Corporation
      James Oliver, Northrop Grumman Corporation
      Evan Jones, Wolfspeed | A Cree Company
      Download Paper
  • Afshar, Amir

    University of Alberta
    • 6a.1 Plasma-Enhanced ALD for Improved MOS Interfaces in III-V Semiconductors

      Vallen Rezazadeh, University of Alberta
      Kyle Bothe, University of Alberta
      Amir Afshar, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper
  • Agwani, Suhail

    Freescale Semiconductor, Inc.
    • 2.2 GaN Compelling Features for Developing RF Power Markets

      Pierre Piel, Freescale Semiconductor Inc.
      Suhail Agwani, Freescale Semiconductor, Inc.
      Bruce Green, Freescale Semiconductor, Inc.
      Jim Norling, Freescale Semiconductor, Inc.
      Wayne Burger, Freescale Semiconductor, Inc.
      Monte Miller, Freescale Semiconductor Inc.
      Download Paper
  • Ahmad, Imad

    Northrop Grumman Corporation
    • 5a.3 Characterization and Modeling of Sub-Harmonic Oscillations in GaAs and GaN FET Technologies

      Mike Salib, Northrop Grumman Corporation
      Imad Ahmad, Northrop Grumman Corporation
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  • Ahn, Shihyun

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
    • 10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing

      Byungjae Kim, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida
      David Smith, Arizona State University
      Tsung-Sheng Kang, University of Florida
      Junhao Zhu
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  • Allain, Fabienne

    CEA, Leti
    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Altman, D.

    • 7a.3 GaN on Diamond: Pushing the Boundaries of Conventional MMIC Design and Fabrication

      D. Altman
      Matthew Tyhach, Raytheon Company
      V. Kaper
      J. Sanctuary
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  • Anderson, Travis

    Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
    • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Boris Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
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  • Andreev, Andrei

    Infineon Technologies Austria AG
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
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  • Asubar, Joel

    University of Fukui
    • 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

      Jie Hong Ng, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Banerjee, Abishek

    ON Semiconductor, Oudenaarde 9700, Belgium
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
  • Bao, Qilong

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Bar-Cohen, A.

    Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
    • 7a.1 Developing a New Thermal Paradigm for Gallium Nitride (GaN) Device Technology

      John Blevins, Air Force Research Laboratory
      Glen Via, AFRL
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A Sivananthan, Booz-Allen-Hamilton
      Download Paper
  • Barlage, Douglas

    University of Alberta
    • 6a.1 Plasma-Enhanced ALD for Improved MOS Interfaces in III-V Semiconductors

      Vallen Rezazadeh, University of Alberta
      Kyle Bothe, University of Alberta
      Amir Afshar, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper
  • Baskaran, Rajesh

    MACOM Technology Solutions Inc.
    • 9.4 Simulation of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

      Sameer Joglekar, Massachusetts Institute of Technology
      Chuanxin Lian, MACOM Technology Solutions Inc.
      Rajesh Baskaran, MACOM Technology Solutions Inc.
      Yan Zhang, MACOM Technology Solutions, Inc
      Allen Hanson, MACOM Technology Solutions Inc.
      Download Paper
  • Bengtsson, Olof

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 3.3 Developing of K- and Ka-band High Power Amplifier GaN MMIC Fabrication Technology

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Olof Bengtsson, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Natalia Kemf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Bettencourt, John

    Raytheon IDS
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
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  • Beutel, Paul

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Bing Mei, Xiao

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • Blevins, John

    Air Force Research Laboratory
    • 7a.1 Developing a New Thermal Paradigm for Gallium Nitride (GaN) Device Technology

      John Blevins, Air Force Research Laboratory
      Glen Via, AFRL
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A Sivananthan, Booz-Allen-Hamilton
      Download Paper
  • Bobkowski, Romek

    Qorvo, Inc.
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • Bonafede, Salvatore

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Bonanni, Alberta

    Johannes Kepler University Linz
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Bothe, Kyle

    University of Alberta
    • 6a.1 Plasma-Enhanced ALD for Improved MOS Interfaces in III-V Semiconductors

      Vallen Rezazadeh, University of Alberta
      Kyle Bothe, University of Alberta
      Amir Afshar, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper
  • Boudelle, Konstantin

    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Bower, Chris

    X-Celeprint. Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Brockett, Steve

    Qorvo, Inc.
    • 7b.2 Fabrication Process Induced ESD Damage of MIM Capacitors on a 0.15um pHEMT Process

      Robert Waco, Qorvo Inc.
      Rose Emergo, Qorvo, Inc.
      Steve Brockett, Qorvo, Inc.
      Tertius Rivers
      Yiping Wang, Qorvo Inc.
      Download Paper
  • Brown, Tom

    Skyworks Solutions, Inc.
    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
  • Burger, Wayne

    Freescale Semiconductor, Inc.
    • 2.2 GaN Compelling Features for Developing RF Power Markets

      Pierre Piel, Freescale Semiconductor Inc.
      Suhail Agwani, Freescale Semiconductor, Inc.
      Bruce Green, Freescale Semiconductor, Inc.
      Jim Norling, Freescale Semiconductor, Inc.
      Wayne Burger, Freescale Semiconductor, Inc.
      Monte Miller, Freescale Semiconductor Inc.
      Download Paper
  • C. Chao, P.

    MEC, BAE Systems, IQE
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Cadien, Kenneth

    University of Alberta
    • 6a.1 Plasma-Enhanced ALD for Improved MOS Interfaces in III-V Semiconductors

      Vallen Rezazadeh, University of Alberta
      Kyle Bothe, University of Alberta
      Amir Afshar, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper
  • Cadotte, Roland

    Lockheed Martin
    • 7a.2 GaN Unleashed: The Benefits of Microfluidic Cooling

      John Ditri, Lockheed Martin
      Robert Pearson, Lockheed Martin
      Roland Cadotte, Lockheed Martin
      David Fetterolf, Lockheed Martin
      Michael McNulty, Lockheed Martin
      Denise Luppa, Lockheed Martin
      Download Paper
  • Caesar, Markus

    ON Semiconductor, Oudenaarde 9700, Belgium
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
  • Cai, Yong

    Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Campbell, G

    Science Research Laboratories, Inc.
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Carroll, Patrick

    Qorvo, Inc
    • 7b.1 Automated Optical Inspection (AOI) For Quality Improvement

      Yu Wang, Qorvo, Inc
      Tom Cheng, Qorvo
      Crystal Chueng, Qorvo
      Patrick Carroll, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Download Paper
    • 7b.4 Using Six-Sigma Methodology to Reduce Metal-Insulator-Metal Capacitance Density Variance

      Jing Yao, Qorvo, Inc
      Lou Pagentine, Qorovo, Inc
      Dan Groft, Qorvo, Inc
      Pam Worsley, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Patrick Carroll, Qorvo, Inc
      Download Paper
  • Carter, James

    MACOM
    • 6b.4 Consolidation Method for SPC Data Review in a High Product Mix Semiconductor Fab

      James Carter, MACOM
      Anne Collins, MACOM Technology Solutions
      Download Paper
  • Celii, Francis

    Qorvo
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • Chabak, Kelson

    Air Force Research Laboratory
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Chai, Shumin

    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Chang, Chia-Ta

    WIN Semiconductors Corp.
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Charles, Matthew

    CEA, Leti
    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Chatterjee, Indranil

    H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
  • Chen, Xiang

    Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

      Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Tongbo Wei
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jinmin Li, NAURA Technology Group Co., Ltd.
      Download Paper
  • Cheney, David

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
  • Cheng, Kezia

    MACOM Technology Solution
    • 10a.5 An Evaporation Lift Off Process with Unidirectional Conformal Coverage

      Kezia Cheng, MACOM Technology Solution
      Christopher Macdonald
      Kamal Tabatabaie Alavi, Raytheon Company, Integrated Defense Systems
      Download Paper
  • Cheng, Tom

    Qorvo
    • 7b.1 Automated Optical Inspection (AOI) For Quality Improvement

      Yu Wang, Qorvo, Inc
      Tom Cheng, Qorvo
      Crystal Chueng, Qorvo
      Patrick Carroll, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Download Paper
  • Cheng, Yuan-Hsiang

    • 12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate

      Hsien-Chin Chiu, Chang Gung University
      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Yuan-Hsiang Cheng
      Download Paper
  • Chevtchenko, Sergey

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 3.3 Developing of K- and Ka-band High Power Amplifier GaN MMIC Fabrication Technology

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Olof Bengtsson, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Natalia Kemf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Chiou, Rei-Bin

    WIN Semiconductors Corp.
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Chiu, Hsien-Chin

    Chang Gung University
    • 12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate

      Hsien-Chin Chiu, Chang Gung University
      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Yuan-Hsiang Cheng
      Download Paper
    • 12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate

      Hsien-Chin Chiu, Chang Gung University
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hou-Yu Wang, Chang Gung University
      Jen-Inn Chyi, National Central University
      Download Paper
  • Chou, Tung-Yao

    WIN Semiconductors Corp.
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Christou, Aris

    University of Maryland-College Park
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Chueng, Crystal

    Qorvo
    • 5a.2 Accurate Prediction of Resistor Variation using Minimum Sized Five Resistor TLM

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Crystal Chueng, Qorvo
      Brian Moser, Qorvo, Inc.
      Peter Zampardi, Qorvo Inc.
      Download Paper
    • 7b.1 Automated Optical Inspection (AOI) For Quality Improvement

      Yu Wang, Qorvo, Inc
      Tom Cheng, Qorvo
      Crystal Chueng, Qorvo
      Patrick Carroll, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Download Paper
  • Chyi, Jen-Inn

    National Central University
    • 12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate

      Hsien-Chin Chiu, Chang Gung University
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hou-Yu Wang, Chang Gung University
      Jen-Inn Chyi, National Central University
      Download Paper
  • Cismaru, Cristian

    Skyworks Solutions, Inc.
    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
    • 5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

      Andre Metzger
      Jiang Li, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Cristian Cismaru, Skyworks Solutions, Inc.
      Jiro Yota
      Download Paper
  • Collins, Anne

    MACOM Technology Solutions
    • 6b.4 Consolidation Method for SPC Data Review in a High Product Mix Semiconductor Fab

      James Carter, MACOM
      Anne Collins, MACOM Technology Solutions
      Download Paper
  • Cooper, Jayson

    • 6a.5 Temporary Bonding for Backside Processing of 150-mm SiC Wafers

      Ramachandran Trichur
      Jayson Cooper
      Molly Hladik, Brewer Science, Inc
      Lou Pagentine, Qorovo, Inc
      Download Paper
  • Creamer, Carlton

    BAE Systems Inc
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Crespo, Antonio

    AFRL
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Daumiller, Ingo

    Infineon Technologies Austria AG
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Davis, William

    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • de Buttet, Agnès

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Deal, William

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • Dessiatoun, S

    University of Maryland
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Detchprohm, Theeradetch

    Georgia Tech
    • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

      Tsung-Ting Kao, Georgia Institute of Technology,
      Xiao-Jia Jia, Georgia Institute of Technology
      Yuh-Shiuan Liu, Georgia Institute of Technology
      Theeradetch Detchprohm, Georgia Tech
      Russell Dupuis, Georgia Tech
      Shyh-Chiang Shen, Georgia Institute of Technology
      Download Paper
  • Dimroth, Frank

    Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Ditri, John

    Lockheed Martin
    • 7a.2 GaN Unleashed: The Benefits of Microfluidic Cooling

      John Ditri, Lockheed Martin
      Robert Pearson, Lockheed Martin
      Roland Cadotte, Lockheed Martin
      David Fetterolf, Lockheed Martin
      Michael McNulty, Lockheed Martin
      Denise Luppa, Lockheed Martin
      Download Paper
  • Downey, Brian

    US Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
  • Drazek, Charlotte

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Drouin, Alexis

    SOITEC S.A.
    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Dupuis, Russell

    Georgia Tech
    • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

      Tsung-Ting Kao, Georgia Institute of Technology,
      Xiao-Jia Jia, Georgia Institute of Technology
      Yuh-Shiuan Liu, Georgia Institute of Technology
      Theeradetch Detchprohm, Georgia Tech
      Russell Dupuis, Georgia Tech
      Shyh-Chiang Shen, Georgia Institute of Technology
      Download Paper
  • Dusseault, Thomas

    • 7a.4 GaN MMIC Impingement Jet Cooled Embedded Diamond

      Vincent Gambin
      Benjamin Poust
      Dino Ferizovic, Northrop Grumman Aerospace Systems
      Monte Watanabe, Northrop Grumman Aerospace Systems
      Gary Mandrusiak, GE Global Research
      Thomas Dusseault
      Download Paper
  • Eddy, Charles

    US Naval Research Laboratory
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Emergo, Rose

    Qorvo, Inc.
    • 7b.2 Fabrication Process Induced ESD Damage of MIM Capacitors on a 0.15um pHEMT Process

      Robert Waco, Qorvo Inc.
      Rose Emergo, Qorvo, Inc.
      Steve Brockett, Qorvo, Inc.
      Tertius Rivers
      Yiping Wang, Qorvo Inc.
      Download Paper
  • Eppich, H

    Science Research Laboratories, Inc.
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • F Tsai, H

    WIN Semiconductors Corp.
    • 6b.2 An Effective Data Analysis Approach to Identify Source of Parametric Performance Variations for GaAs Manufacturing

      Mingwei Tsai, WIN semiconductors
      H T Li, WIN Semiconductors Corp.
      H F Tsai, WIN Semiconductors Corp.
      J W Chen, WIN Semiconductors Corp.
      W H Wang, WIN Semiconductors Corp.
      Download Paper
  • Faili, Firooz

    Element Six Technologies
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Fay Fay, Patrick

    University of Notre Dame
    • 12.1 GaN Nanowire MISFETs for Low-Power Applications

      Wenjun Li, University of Notre Dame
      Kasra Pourang, University of Notre Dame
      S M Moududul Islam, Cornell University
      Debdeep Jena, Cornell University
      Patrick Fay Fay, University of Notre Dame
      Download Paper
  • Fecioru, Alin

    X-Celeprint, Ltd.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Feigelson, Boris

    Naval Research Laboratory
    • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Boris Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
  • Feng, Milton

    University of Illinois Urbana-Champaign
    • 6a.2 Inductively Coupled Plasma Dry Etching Process Development for > 50 Gb/s 850 nm Oxide-Confined VCSELs

      Michael Liu
      Curtis Wang, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
    • 10a.2 Nonalloyed Refractory Metals for Self-Aligned InP HBT Emitter Contacts with InAs/InGaAs Emitter Cap

      Ardy Winoto, University of Illinois at Urbana Champaign
      Junyi Qiu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
    • 12.8 Microwave Equivalent Circuit Modeling of 28 GHz Modulated 850 nm Oxide-Confined VCSELs

      Curtis Wang, University of Illinois at Urbana-Champaign
      Michael Liu
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Ferizovic, Dino

    Northrop Grumman Aerospace Systems
    • 7a.4 GaN MMIC Impingement Jet Cooled Embedded Diamond

      Vincent Gambin
      Benjamin Poust
      Dino Ferizovic, Northrop Grumman Aerospace Systems
      Monte Watanabe, Northrop Grumman Aerospace Systems
      Gary Mandrusiak, GE Global Research
      Thomas Dusseault
      Download Paper
  • Ferwalt, Darren

    Cobham Advanced Electronic Systems
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Fetterolf, David

    Lockheed Martin
    • 7a.2 GaN Unleashed: The Benefits of Microfluidic Cooling

      John Ditri, Lockheed Martin
      Robert Pearson, Lockheed Martin
      Roland Cadotte, Lockheed Martin
      David Fetterolf, Lockheed Martin
      Michael McNulty, Lockheed Martin
      Denise Luppa, Lockheed Martin
      Download Paper
  • Feygelson, Tatyana

    Naval Research Laboratory
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Figuet, Christophe

    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Fitch, Robert

    AFRL
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Francis, Daniel

    Element Six Technologies
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Franklin, Angela

    Qorvo
    • 6b.3 Implementation of a Supplier Ship-To-Control Methodology and Resulting Improvements at Qorvo

      Marie Le Guilly, Qorvo
      Sheila Hurtt
      Angela Franklin, Qorvo
      Download Paper
  • Frey, David

    Cobham Advanced Electronic Systems
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Frias, Christopher

    Qorvo, Inc.
    • 6b.1 Automating from Tapeout to Factory for a High-mix Fab

      Christopher Frias, Qorvo, Inc.
      Download Paper
  • Fu, Kai

    Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Fujiwara, Shinya

    Sumiden Semiconductor Materials Co., Ltd.
    • 5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate

      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd.
      Kazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.
      Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.
      Yoshiaki Hagi, Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper
  • Gambin, Vincent

    • 7a.4 GaN MMIC Impingement Jet Cooled Embedded Diamond

      Vincent Gambin
      Benjamin Poust
      Dino Ferizovic, Northrop Grumman Aerospace Systems
      Monte Watanabe, Northrop Grumman Aerospace Systems
      Gary Mandrusiak, GE Global Research
      Thomas Dusseault
      Download Paper
  • Gammel, Peter

    Skyworks Solutions
    • 1.2 RF Technology Initiatives for 5G

      Peter Gammel, Skyworks Solutions
      Stephen Kovacic, Skyworks Solutions, Inc.
      Download Paper
  • Gassmann, Jeremy

    Cobham Advanced Electronic Systems
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Gaudin, Qweltaz

    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Gebara, Gabe

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Ghosal, Kanchan

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Gila, Brent

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
  • Gilbert, Ryan

    Wyle Laboratories
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Gillespie, James

    Air Force Research Laboratory
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Gomez, David

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Green, A.J.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Green, Bruce

    Freescale Semiconductor, Inc.
    • 2.2 GaN Compelling Features for Developing RF Power Markets

      Pierre Piel, Freescale Semiconductor Inc.
      Suhail Agwani, Freescale Semiconductor, Inc.
      Bruce Green, Freescale Semiconductor, Inc.
      Jim Norling, Freescale Semiconductor, Inc.
      Wayne Burger, Freescale Semiconductor, Inc.
      Monte Miller, Freescale Semiconductor Inc.
      Download Paper
  • Greenlee, Jordan

    NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Boris Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
  • Groft, Dan

    Qorvo, Inc
    • 7b.4 Using Six-Sigma Methodology to Reduce Metal-Insulator-Metal Capacitance Density Variance

      Jing Yao, Qorvo, Inc
      Lou Pagentine, Qorovo, Inc
      Dan Groft, Qorvo, Inc
      Pam Worsley, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Patrick Carroll, Qorvo, Inc
      Download Paper
  • Guenther, Doug

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Guiot, Eric

    SOITEC
    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Guo, Shiping

    IQE RF LLC
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Guo, Yanan

    Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

      Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Tongbo Wei
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jinmin Li, NAURA Technology Group Co., Ltd.
      Download Paper
  • H Liu, P

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • H Wang, W

    WIN Semiconductors Corp.
    • 6b.2 An Effective Data Analysis Approach to Identify Source of Parametric Performance Variations for GaAs Manufacturing

      Mingwei Tsai, WIN semiconductors
      H T Li, WIN Semiconductors Corp.
      H F Tsai, WIN Semiconductors Corp.
      J W Chen, WIN Semiconductors Corp.
      W H Wang, WIN Semiconductors Corp.
      Download Paper
  • Hagi, Yoshiaki

    Sumitomo Electric Industries, Ltd, Itami
    • 5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate

      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd.
      Kazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.
      Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.
      Yoshiaki Hagi, Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper
  • Halac, Greg

    Avago Technologies
    • 11.4 A SiN Passivation for Improved Moisture Reliability of Au Interconnect With Low-K BCB ILD

      Jonathan Abrokwah, Avago Technologies
      Nathan Perkins, Avago Technologies
      Scott Rumery, Avago Technologies
      Greg Halac, Avago Technologies
      Robert Long, Avago Technologies
      Download Paper
  • Hall, Craig

    Qorvo
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • Hamilton, Don

    Qorvo
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Hanson, Allen

    MACOM Technology Solutions Inc.
    • 9.4 Simulation of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

      Sameer Joglekar, Massachusetts Institute of Technology
      Chuanxin Lian, MACOM Technology Solutions Inc.
      Rajesh Baskaran, MACOM Technology Solutions Inc.
      Yan Zhang, MACOM Technology Solutions, Inc
      Allen Hanson, MACOM Technology Solutions Inc.
      Download Paper
  • Hardy, Matthew

    US Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
  • Herring, Ronald

    Qorvo
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Hite, Jennifer

    U.S. Naval Research Laboratory
    • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Boris Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Hladik, Molly

    Brewer Science, Inc
    • 6a.5 Temporary Bonding for Backside Processing of 150-mm SiC Wafers

      Ramachandran Trichur
      Jayson Cooper
      Molly Hladik, Brewer Science, Inc
      Lou Pagentine, Qorovo, Inc
      Download Paper
  • Hobart, Karl

    Naval Research Laboratory
    • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Boris Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Hong Ng, Jie

    University of Fukui
    • 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

      Jie Hong Ng, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Horikiri, Fumimasa

    Sciocs Company Limited
    • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tomoyoshi Mishima, Hosei University
      Tohru Nakamura, Hosei University
      Download Paper
  • Hsu, Jung-Hao

    WIN Semiconductors Corp.
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Hua, Mengyuan

    The Hong Kong University of Science and Technology
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Huang, Alex

    North Carolina State University
    • 5b.4 GaN PN Junction Diode Based on Heated Magnesium Implantation And High Temperature Annealing

      Sizhen WANG, North Carolina State University
      In Hwan JI, North Carolina State University
      Alex Huang, North Carolina State University
      Download Paper
  • Huang*, Sen

    Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Huber, Martin

    Infineon Technologies Austria AG
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Hunter, Joe

    Avago Technologies
    • 10a.4 Reduction in Current Leakage Fails Through an Improved Metal Lift-off Process

      Joe Hunter, Avago Technologies
      Jonathan Abrokwah, Avago Technologies
      Download Paper
  • Hurtt, Sheila

    • 6b.3 Implementation of a Supplier Ship-To-Control Methodology and Resulting Improvements at Qorvo

      Marie Le Guilly, Qorvo
      Sheila Hurtt
      Angela Franklin, Qorvo
      Download Paper
  • Hwan JI, In

    North Carolina State University
    • 5b.4 GaN PN Junction Diode Based on Heated Magnesium Implantation And High Temperature Annealing

      Sizhen WANG, North Carolina State University
      In Hwan JI, North Carolina State University
      Alex Huang, North Carolina State University
      Download Paper
  • Ip, Kelly

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Ishikawa, Fumitaroh

    • 12.9 Improved Optical Quality and 1.26 μm Light Emission from (411) GaAsBi /GaAs MQWs Grown by MBE

      Pallavi Patil
      Fumitaroh Ishikawa
      Satoshi Shimomura
      Download Paper
  • Isom, Harold

    Qorvo
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • J. Chen, Kevin

    The Hong Kong University of Science and Technology
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Janani, Mehran

    Skyworks Solutions, Inc.
    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
  • Jena, Debdeep

    Cornell University
    • 12.1 GaN Nanowire MISFETs for Low-Power Applications

      Wenjun Li, University of Notre Dame
      Kasra Pourang, University of Notre Dame
      S M Moududul Islam, Cornell University
      Debdeep Jena, Cornell University
      Patrick Fay Fay, University of Notre Dame
      Download Paper
  • Jessen, G.H.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Jia, Xiao-Jia

    Georgia Institute of Technology
    • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

      Tsung-Ting Kao, Georgia Institute of Technology,
      Xiao-Jia Jia, Georgia Institute of Technology
      Yuh-Shiuan Liu, Georgia Institute of Technology
      Theeradetch Detchprohm, Georgia Tech
      Russell Dupuis, Georgia Tech
      Shyh-Chiang Shen, Georgia Institute of Technology
      Download Paper
  • Jiang, Huaxing

    Hong Kong University of Science and Technology
    • 11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
    • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs

      Kun Yu, Xi’an Jiaotong University
      Chao Liu, Hong Kong University of Science and Technology
      Huaxing Jiang, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Anping Zhang, Xi'an Jiaotong University
      Download Paper
  • Joglekar, Sameer

    Massachusetts Institute of Technology
    • 9.4 Simulation of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

      Sameer Joglekar, Massachusetts Institute of Technology
      Chuanxin Lian, MACOM Technology Solutions Inc.
      Rajesh Baskaran, MACOM Technology Solutions Inc.
      Yan Zhang, MACOM Technology Solutions, Inc
      Allen Hanson, MACOM Technology Solutions Inc.
      Download Paper
  • Jones, Evan

    Wolfspeed | A Cree Company
    • 6a.3 Reduction of Thin Film Stress-induced Micro-masking by Using Ti/Ni Hard Mask for High Power SiC Transistor Fabrication

      Shamima Afroz, Northrop Grumman
      Jason Thomen, Northrop Grumman Corporation
      James Oliver, Northrop Grumman Corporation
      Evan Jones, Wolfspeed | A Cree Company
      Download Paper
  • Jose Trinadade, Antonio

    X-Celeprint, Ltd.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Joshin, Kazukiyo

    Fujitsu Laboratories Ltd.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Jr.,

    Naval Research Laboratory
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Jung, Helmut

    United Monolithic Semiconductors GmbH, Ulm, Germany
    • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Benoît Lambert, United Monolithic Semiconductors Germany
      Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
      Martin Kuball, University of Bristol
      Download Paper
  • K Chu, K

    BAE Systems
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Kallaher, R

    Modern Microsystems
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Kamada, Yoichi

    Fujitsu Laboratories
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Kang, Tsung-Sheng

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
    • 10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing

      Byungjae Kim, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida
      David Smith, Arizona State University
      Tsung-Sheng Kang, University of Florida
      Junhao Zhu
      Download Paper
  • Kao, Tsung-Ting

    Georgia Institute of Technology,
    • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

      Tsung-Ting Kao, Georgia Institute of Technology,
      Xiao-Jia Jia, Georgia Institute of Technology
      Yuh-Shiuan Liu, Georgia Institute of Technology
      Theeradetch Detchprohm, Georgia Tech
      Russell Dupuis, Georgia Tech
      Shyh-Chiang Shen, Georgia Institute of Technology
      Download Paper
  • Kaper, V.

    • 7a.3 GaN on Diamond: Pushing the Boundaries of Conventional MMIC Design and Fabrication

      D. Altman
      Matthew Tyhach, Raytheon Company
      V. Kaper
      J. Sanctuary
      Download Paper
  • karboyan, Serge

    University of Bristol
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
  • Karcher, Christian

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Kassinos, A

    BAE Systems
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Kazior, Thomas

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Kemf, Natalia

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 3.3 Developing of K- and Ka-band High Power Amplifier GaN MMIC Fabrication Technology

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Olof Bengtsson, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Natalia Kemf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Kennedy, Theodore

    Raytheon IDS
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Ketterson, Andrew

    Qorvo Inc.
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Kim, Byungjae

    University of Florida
    • 10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing

      Byungjae Kim, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida
      David Smith, Arizona State University
      Tsung-Sheng Kang, University of Florida
      Junhao Zhu
      Download Paper
  • Kleven, Brian

    Qorvo
    • 6b.5 Outlier Labeling Method for Univariate Data for Module Test and Die Sort

      Thorsten Saeger
      Brian Kleven, Qorvo
      Ingrid Otero, Qorvo
      Michelle Wallace, Qorvo
      Randi Ziglar, Qorvo
      Download Paper
  • Kneeburg, David

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Knuuttila, Lauri

    Infineon Technologies Austria AG
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Koehler, Andrew

    Naval Research Laboratory
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Kopnarski, Michael

    IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Kounoike, Kazuaki

    Sumiden Semiconductor Materials Co., Ltd.
    • 5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate

      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd.
      Kazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.
      Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.
      Yoshiaki Hagi, Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper
  • Kovacic, Stephen

    Skyworks Solutions, Inc.
    • 1.2 RF Technology Initiatives for 5G

      Peter Gammel, Skyworks Solutions
      Stephen Kovacic, Skyworks Solutions, Inc.
      Download Paper
  • Kraft, Rob

    Qorvo Inc.
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Kub, Francis

    U.S. Naval Research Laboratory
    • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Boris Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
  • Kub, Fritz

    Naval Research Laboratory
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Kuball, Martin

    University of Bristol
    • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

      Alexander Pooth, University of Bristol
      Michael Uren, University of Bristol
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Martin Kuball, University of Bristol
      Download Paper
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
    • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Benoît Lambert, United Monolithic Semiconductors Germany
      Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
      Martin Kuball, University of Bristol
      Download Paper
  • Kurpas, Paul

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
    • 3.3 Developing of K- and Ka-band High Power Amplifier GaN MMIC Fabrication Technology

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Olof Bengtsson, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Natalia Kemf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Kuzuhara, Masaaki

    University of Fukui
    • 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

      Jie Hong Ng, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Lambert, Benoît

    United Monolithic Semiconductors Germany
    • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Benoît Lambert, United Monolithic Semiconductors Germany
      Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
      Martin Kuball, University of Bristol
      Download Paper
  • Lange, M

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • LaRoche, Jeffrey

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Law, Mark

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
  • Le Guilly, Marie

    Qorvo
    • 6b.3 Implementation of a Supplier Ship-To-Control Methodology and Resulting Improvements at Qorvo

      Marie Le Guilly, Qorvo
      Sheila Hurtt
      Angela Franklin, Qorvo
      Download Paper
  • Lee, Cathy

    Qorvo Inc.
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Lee, J

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • Leedy, K.D.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Leong, K

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • Li, Chang-Ho

    WIN Semiconductors Corp.
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Li, Jiang

    Skyworks Solutions, Inc.
    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
    • 5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

      Andre Metzger
      Jiang Li, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Cristian Cismaru, Skyworks Solutions, Inc.
      Jiro Yota
      Download Paper
  • Li, Jinmin

    NAURA Technology Group Co., Ltd.
    • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

      Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Tongbo Wei
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jinmin Li, NAURA Technology Group Co., Ltd.
      Download Paper
  • Li, Junfeng

    Chinese Academy of Sciences
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Li, Vivian

    Qorvo Inc.
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Li, Wenjun

    University of Notre Dame
    • 12.1 GaN Nanowire MISFETs for Low-Power Applications

      Wenjun Li, University of Notre Dame
      Kasra Pourang, University of Notre Dame
      S M Moududul Islam, Cornell University
      Debdeep Jena, Cornell University
      Patrick Fay Fay, University of Notre Dame
      Download Paper
  • Li, Yankui

    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Lian, Chuanxin

    MACOM Technology Solutions Inc.
    • 9.4 Simulation of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

      Sameer Joglekar, Massachusetts Institute of Technology
      Chuanxin Lian, MACOM Technology Solutions Inc.
      Rajesh Baskaran, MACOM Technology Solutions Inc.
      Yan Zhang, MACOM Technology Solutions, Inc
      Allen Hanson, MACOM Technology Solutions Inc.
      Download Paper
  • Lin, Cheng-Kuo

    WIN Semiconductors Corp
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Lin, Ju-Hsien

    WIN Semiconductors Corp.
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Lin, Yi-Hsuan

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
  • Liu, Chao

    Hong Kong University of Science and Technology
    • 11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
    • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs

      Kun Yu, Xi’an Jiaotong University
      Chao Liu, Hong Kong University of Science and Technology
      Huaxing Jiang, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Anping Zhang, Xi'an Jiaotong University
      Download Paper
  • Liu, Cheng

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Liu, Dong

    University of Oxford, University of Bristol
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Liu, Michael

    • 6a.2 Inductively Coupled Plasma Dry Etching Process Development for > 50 Gb/s 850 nm Oxide-Confined VCSELs

      Michael Liu
      Curtis Wang, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
    • 12.8 Microwave Equivalent Circuit Modeling of 28 GHz Modulated 850 nm Oxide-Confined VCSELs

      Curtis Wang, University of Illinois at Urbana-Champaign
      Michael Liu
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Liu, Shenghou

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Liu, Xinyu

    Institute of Microelectronics, Chinese Academy of Sciences
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Liu, Yuh-Shiuan

    Georgia Institute of Technology
    • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

      Tsung-Ting Kao, Georgia Institute of Technology,
      Xiao-Jia Jia, Georgia Institute of Technology
      Yuh-Shiuan Liu, Georgia Institute of Technology
      Theeradetch Detchprohm, Georgia Tech
      Russell Dupuis, Georgia Tech
      Shyh-Chiang Shen, Georgia Institute of Technology
      Download Paper
  • Long, Robert

    Avago Technologies
    • 11.4 A SiN Passivation for Improved Moisture Reliability of Au Interconnect With Low-K BCB ILD

      Jonathan Abrokwah, Avago Technologies
      Nathan Perkins, Avago Technologies
      Scott Rumery, Avago Technologies
      Greg Halac, Avago Technologies
      Robert Long, Avago Technologies
      Download Paper
  • Lossy, Richard

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
    • 3.3 Developing of K- and Ka-band High Power Amplifier GaN MMIC Fabrication Technology

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Olof Bengtsson, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Natalia Kemf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Lu, Xing

    Hong Kong University of Science and Technology
    • 11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
    • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs

      Kun Yu, Xi’an Jiaotong University
      Chao Liu, Hong Kong University of Science and Technology
      Huaxing Jiang, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Anping Zhang, Xi'an Jiaotong University
      Download Paper
  • Lu, Yunyou

    The Hong Kong University of Science and Technology
    • 9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Yunyou Lu, The Hong Kong University of Science and Technology
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Yong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Baoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Lube, Michael

    Qorvo
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Lundskog, Anders

    Infineon Technologies Austria AG
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Luppa, Denise

    Lockheed Martin
    • 7a.2 GaN Unleashed: The Benefits of Microfluidic Cooling

      John Ditri, Lockheed Martin
      Robert Pearson, Lockheed Martin
      Roland Cadotte, Lockheed Martin
      David Fetterolf, Lockheed Martin
      Michael McNulty, Lockheed Martin
      Denise Luppa, Lockheed Martin
      Download Paper
  • M Moududul Islam, S

    Cornell University
    • 12.1 GaN Nanowire MISFETs for Low-Power Applications

      Wenjun Li, University of Notre Dame
      Kasra Pourang, University of Notre Dame
      S M Moududul Islam, Cornell University
      Debdeep Jena, Cornell University
      Patrick Fay Fay, University of Notre Dame
      Download Paper
  • Macdonald, Christopher

    • 10a.5 An Evaporation Lift Off Process with Unidirectional Conformal Coverage

      Kezia Cheng, MACOM Technology Solution
      Christopher Macdonald
      Kamal Tabatabaie Alavi, Raytheon Company, Integrated Defense Systems
      Download Paper
  • Makiyama, Kozo

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Maleville, Christophe

    SOITEC
    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Mandrusiak, Gary

    GE Global Research
    • 7a.4 GaN MMIC Impingement Jet Cooled Embedded Diamond

      Vincent Gambin
      Benjamin Poust
      Dino Ferizovic, Northrop Grumman Aerospace Systems
      Monte Watanabe, Northrop Grumman Aerospace Systems
      Gary Mandrusiak, GE Global Research
      Thomas Dusseault
      Download Paper
  • Martin, Trevor

    IQE Europe, St Mellons, Cardiff, UK
    • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

      Alexander Pooth, University of Bristol
      Michael Uren, University of Bristol
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Martin Kuball, University of Bristol
      Download Paper
  • Martin Horcajo, Sara

    Centre for Device Thermography and Reliability (CDTR), University of Bristol
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
    • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Benoît Lambert, United Monolithic Semiconductors Germany
      Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
      Martin Kuball, University of Bristol
      Download Paper
  • Mason, Sarah

    Broadcom
    • 7b.3 Reduction of Capacitor Metal Defect Formation in High Volume Manufacturing

      Sarah Mason, Broadcom
      Download Paper
  • Mausolf, Karsten

    Qorvo
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • May Lau, Kei

    Hong Kong University of Science and Technology
    • 11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
    • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs

      Kun Yu, Xi’an Jiaotong University
      Chao Liu, Hong Kong University of Science and Technology
      Huaxing Jiang, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Anping Zhang, Xi'an Jiaotong University
      Download Paper
  • McClure, Mike

    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • McCormick, Eric

    Qorvo, Inc.
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • McGray, C

    Modern Microsystems
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • McNulty, Michael

    Lockheed Martin
    • 7a.2 GaN Unleashed: The Benefits of Microfluidic Cooling

      John Ditri, Lockheed Martin
      Robert Pearson, Lockheed Martin
      Roland Cadotte, Lockheed Martin
      David Fetterolf, Lockheed Martin
      Michael McNulty, Lockheed Martin
      Denise Luppa, Lockheed Martin
      Download Paper
  • Meitl, Matthew

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Metzger, Andre

    • 5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

      Andre Metzger
      Jiang Li, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Cristian Cismaru, Skyworks Solutions, Inc.
      Jiro Yota
      Download Paper
  • Meyer, David

    US Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
  • Middleton*, Jeremy

    TriQuint Semiconductor, Inc.
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Miller, Monte

    Freescale Semiconductor Inc.
    • 2.2 GaN Compelling Features for Developing RF Power Markets

      Pierre Piel, Freescale Semiconductor Inc.
      Suhail Agwani, Freescale Semiconductor, Inc.
      Bruce Green, Freescale Semiconductor, Inc.
      Jim Norling, Freescale Semiconductor, Inc.
      Wayne Burger, Freescale Semiconductor, Inc.
      Monte Miller, Freescale Semiconductor Inc.
      Download Paper
  • Mishima, Tomoyoshi

    Hosei University
    • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tomoyoshi Mishima, Hosei University
      Tohru Nakamura, Hosei University
      Download Paper
  • Moens, Peter

    ON Semiconductor, Corp. R&D
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
  • Moereke, Janina

    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Mohata, Dheeraj

    Global Communication Semiconductors, LLC
    • 5a.2 Accurate Prediction of Resistor Variation using Minimum Sized Five Resistor TLM

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Crystal Chueng, Qorvo
      Brian Moser, Qorvo, Inc.
      Peter Zampardi, Qorvo Inc.
      Download Paper
  • Mongia, R.K.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Moore, Tanya

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Morishita, Tomonori

    Sumiden Semiconductor Materials Co., Ltd.
    • 5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate

      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd.
      Kazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.
      Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.
      Yoshiaki Hagi, Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper
  • Morvan, Erwan

    CEA, Leti
    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Moser, Brian

    Qorvo, Inc.
    • 5a.2 Accurate Prediction of Resistor Variation using Minimum Sized Five Resistor TLM

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Crystal Chueng, Qorvo
      Brian Moser, Qorvo, Inc.
      Peter Zampardi, Qorvo Inc.
      Download Paper
  • Nakamura, Tohru

    Hosei University
    • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tomoyoshi Mishima, Hosei University
      Tohru Nakamura, Hosei University
      Download Paper
  • Nappa, Dario

    TriQuint Semiconductor,TX
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • Narita, Yoshinobu

    Sciocs Company Limited
    • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tomoyoshi Mishima, Hosei University
      Tohru Nakamura, Hosei University
      Download Paper
  • Nepal, Neeraj

    US Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
  • Nguyen, Bich-Yen

    SOITEC
    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Niida, Yoshitaka

    Fujitsu Laboratories LTD.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Norling, Jim

    Freescale Semiconductor, Inc.
    • 2.2 GaN Compelling Features for Developing RF Power Markets

      Pierre Piel, Freescale Semiconductor Inc.
      Suhail Agwani, Freescale Semiconductor, Inc.
      Bruce Green, Freescale Semiconductor, Inc.
      Jim Norling, Freescale Semiconductor, Inc.
      Wayne Burger, Freescale Semiconductor, Inc.
      Monte Miller, Freescale Semiconductor Inc.
      Download Paper
  • Ohadi, M

    University of Maryland
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Ohki, Toshihiro

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Ohta, Hiroshi

    Hosei University
    • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tomoyoshi Mishima, Hosei University
      Tohru Nakamura, Hosei University
      Download Paper
  • Okamoto, Naoya

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Oksanen, Lauri

    Nokia Solutions and Networks
    • 1.1 Looking Ahead to 5G

      Lauri Oksanen, Nokia Solutions and Networks
      Download Paper
  • Oliva, Eduard

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Oliver, James

    Northrop Grumman Corporation
    • 6a.3 Reduction of Thin Film Stress-induced Micro-masking by Using Ti/Ni Hard Mask for High Power SiC Transistor Fabrication

      Shamima Afroz, Northrop Grumman
      Jason Thomen, Northrop Grumman Corporation
      James Oliver, Northrop Grumman Corporation
      Evan Jones, Wolfspeed | A Cree Company
      Download Paper
  • Osipov, Konstantin

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 3.3 Developing of K- and Ka-band High Power Amplifier GaN MMIC Fabrication Technology

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Olof Bengtsson, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Natalia Kemf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Otero, Ingrid

    Qorvo
    • 6b.5 Outlier Labeling Method for Univariate Data for Module Test and Die Sort

      Thorsten Saeger
      Brian Kleven, Qorvo
      Ingrid Otero, Qorvo
      Michelle Wallace, Qorvo
      Randi Ziglar, Qorvo
      Download Paper
  • Ozaki, Shiro

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Pagentine, Lou

    Qorovo, Inc
    • 6a.5 Temporary Bonding for Backside Processing of 150-mm SiC Wafers

      Ramachandran Trichur
      Jayson Cooper
      Molly Hladik, Brewer Science, Inc
      Lou Pagentine, Qorovo, Inc
      Download Paper
    • 7b.4 Using Six-Sigma Methodology to Reduce Metal-Insulator-Metal Capacitance Density Variance

      Jing Yao, Qorvo, Inc
      Lou Pagentine, Qorovo, Inc
      Dan Groft, Qorvo, Inc
      Pam Worsley, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Patrick Carroll, Qorvo, Inc
      Download Paper
  • Pate, Bradford

    Naval Research Laboratory
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Patil, Pallavi

    • 12.9 Improved Optical Quality and 1.26 μm Light Emission from (411) GaAsBi /GaAs MQWs Grown by MBE

      Pallavi Patil
      Fumitaroh Ishikawa
      Satoshi Shimomura
      Download Paper
  • Patrick, Erin

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
  • Pearson, Chris

    5G Americas
    • 2.1 LTE Guides the Path to the 5G Revolution

      Chris Pearson, 5G Americas
  • Pearson, Robert

    Lockheed Martin
    • 7a.2 GaN Unleashed: The Benefits of Microfluidic Cooling

      John Ditri, Lockheed Martin
      Robert Pearson, Lockheed Martin
      Roland Cadotte, Lockheed Martin
      David Fetterolf, Lockheed Martin
      Michael McNulty, Lockheed Martin
      Denise Luppa, Lockheed Martin
      Download Paper
  • Pearton, Stephen

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
    • 10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing

      Byungjae Kim, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida
      David Smith, Arizona State University
      Tsung-Sheng Kang, University of Florida
      Junhao Zhu
      Download Paper
  • Peng, Li-Yi

    Chang Gung University
    • 12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate

      Hsien-Chin Chiu, Chang Gung University
      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Yuan-Hsiang Cheng
      Download Paper
    • 12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate

      Hsien-Chin Chiu, Chang Gung University
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hou-Yu Wang, Chang Gung University
      Jen-Inn Chyi, National Central University
      Download Paper
  • Perkins, Nathan

    Avago Technologies
    • 11.4 A SiN Passivation for Improved Moisture Reliability of Au Interconnect With Low-K BCB ILD

      Jonathan Abrokwah, Avago Technologies
      Nathan Perkins, Avago Technologies
      Scott Rumery, Avago Technologies
      Greg Halac, Avago Technologies
      Robert Long, Avago Technologies
      Download Paper
  • Piel, Pierre

    Freescale Semiconductor Inc.
    • 2.2 GaN Compelling Features for Developing RF Power Markets

      Pierre Piel, Freescale Semiconductor Inc.
      Suhail Agwani, Freescale Semiconductor, Inc.
      Bruce Green, Freescale Semiconductor, Inc.
      Jim Norling, Freescale Semiconductor, Inc.
      Wayne Burger, Freescale Semiconductor, Inc.
      Monte Miller, Freescale Semiconductor Inc.
      Download Paper
  • Plissonnier, Marc

    CEA, Leti
    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Poling, B.S.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Pomeroy, James

    University of Bristol
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
    • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Benoît Lambert, United Monolithic Semiconductors Germany
      Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
      Martin Kuball, University of Bristol
      Download Paper
  • Pool, Fred

    Qorvo
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Pooth, Alexander

    University of Bristol
    • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

      Alexander Pooth, University of Bristol
      Michael Uren, University of Bristol
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Martin Kuball, University of Bristol
      Download Paper
  • Pourang, Kasra

    University of Notre Dame
    • 12.1 GaN Nanowire MISFETs for Low-Power Applications

      Wenjun Li, University of Notre Dame
      Kasra Pourang, University of Notre Dame
      S M Moududul Islam, Cornell University
      Debdeep Jena, Cornell University
      Patrick Fay Fay, University of Notre Dame
      Download Paper
  • Poust, Benjamin

    • 7a.4 GaN MMIC Impingement Jet Cooled Embedded Diamond

      Vincent Gambin
      Benjamin Poust
      Dino Ferizovic, Northrop Grumman Aerospace Systems
      Monte Watanabe, Northrop Grumman Aerospace Systems
      Gary Mandrusiak, GE Global Research
      Thomas Dusseault
      Download Paper
  • Prevatte, Carl

    X-Celeprint, Inc.
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Qiu, Junyi

    University of Illinois at Urbana-Champaign
    • 10a.2 Nonalloyed Refractory Metals for Self-Aligned InP HBT Emitter Contacts with InAs/InGaAs Emitter Cap

      Ardy Winoto, University of Illinois at Urbana Champaign
      Junyi Qiu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Raff, Joseph

    Qorvo
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • Ramanathan, Ravi

    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
    • 5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

      Andre Metzger
      Jiang Li, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Cristian Cismaru, Skyworks Solutions, Inc.
      Jiro Yota
      Download Paper
  • Raymond*, Brook

    Nitronex Corporation
    • 8a.2 Transfer Printing of Microscale Compound Semiconductor Devices

      Kanchan Ghosal, X-Celeprint, Inc.
      David Gomez, X-Celeprint, Inc.
      Matthew Meitl, X-Celeprint, Inc.
      Salvatore Bonafede, X-Celeprint, Inc.
      Carl Prevatte, X-Celeprint, Inc.
      Tanya Moore, X-Celeprint, Inc.
      Brook Raymond*, Nitronex Corporation
      David Kneeburg, X-Celeprint, Inc.
      Alin Fecioru, X-Celeprint, Ltd.
      Antonio Jose Trinadade, X-Celeprint, Ltd.
      Chris Bower, X-Celeprint. Inc.
      Download Paper
  • Reitmeier, Zach

    Qorvo, Inc
    • 7b.1 Automated Optical Inspection (AOI) For Quality Improvement

      Yu Wang, Qorvo, Inc
      Tom Cheng, Qorvo
      Crystal Chueng, Qorvo
      Patrick Carroll, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Download Paper
    • 7b.4 Using Six-Sigma Methodology to Reduce Metal-Insulator-Metal Capacitance Density Variance

      Jing Yao, Qorvo, Inc
      Lou Pagentine, Qorovo, Inc
      Dan Groft, Qorvo, Inc
      Pam Worsley, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Patrick Carroll, Qorvo, Inc
      Download Paper
  • Ren, Fan

    University of Florida
    • 8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping

      Tsung-Sheng Kang, University of Florida
      Yi-Hsuan Lin, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Erin Patrick, University of Florida
      Mark Law, University of Florida
      David Cheney, University of Florida
      Brent Gila, University of Florida
      Stephen Pearton, University of Florida
    • 10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing

      Byungjae Kim, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida
      David Smith, Arizona State University
      Tsung-Sheng Kang, University of Florida
      Junhao Zhu
      Download Paper
  • Rezazadeh, Vallen

    University of Alberta
    • 6a.1 Plasma-Enhanced ALD for Improved MOS Interfaces in III-V Semiconductors

      Vallen Rezazadeh, University of Alberta
      Kyle Bothe, University of Alberta
      Amir Afshar, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper
  • Rivers, Tertius

    • 7b.2 Fabrication Process Induced ESD Damage of MIM Capacitors on a 0.15um pHEMT Process

      Robert Waco, Qorvo Inc.
      Rose Emergo, Qorvo, Inc.
      Steve Brockett, Qorvo, Inc.
      Tertius Rivers
      Yiping Wang, Qorvo Inc.
      Download Paper
  • Rumery, Scott

    Avago Technologies
    • 11.4 A SiN Passivation for Improved Moisture Reliability of Au Interconnect With Low-K BCB ILD

      Jonathan Abrokwah, Avago Technologies
      Nathan Perkins, Avago Technologies
      Scott Rumery, Avago Technologies
      Greg Halac, Avago Technologies
      Robert Long, Avago Technologies
      Download Paper
  • Sadaka, Mariam

    SOITEC
    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Saeger, Thorsten

    • 6b.5 Outlier Labeling Method for Univariate Data for Module Test and Die Sort

      Thorsten Saeger
      Brian Kleven, Qorvo
      Ingrid Otero, Qorvo
      Michelle Wallace, Qorvo
      Randi Ziglar, Qorvo
      Download Paper
  • Salib, Mike

    Northrop Grumman Corporation
    • 5a.3 Characterization and Modeling of Sub-Harmonic Oscillations in GaAs and GaN FET Technologies

      Mike Salib, Northrop Grumman Corporation
      Imad Ahmad, Northrop Grumman Corporation
      Download Paper
  • Sanctuary, J.

    • 7a.3 GaN on Diamond: Pushing the Boundaries of Conventional MMIC Design and Fabrication

      D. Altman
      Matthew Tyhach, Raytheon Company
      V. Kaper
      J. Sanctuary
      Download Paper
  • Sato, Masaru

    Fujitsu Laboratories LTD.
    • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kamada, Fujitsu Laboratories
      Masaru Sato, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Download Paper
  • Schauwecker, Bernd

    United Monolithic Semiconductors
    • 10b.1 RF-WLR Investigation on 0.5µm AlGaN-GaN HEMTs

      Bernd Schauwecker, United Monolithic Semiconductors
      Simon Stolz, United Monoloihtic Semiconductors GmbH
      Download Paper
  • Schubert, Peter

    Indiana University-Purdue University Indianapolis
    • 12.2 Doubly Self-Aligned DMOSFET in SiC for Microgravity Manufacture

      Peter Schubert, Indiana University-Purdue University Indianapolis
      Download Paper
  • Schwarzenbach, Walter

    SOITEC
    • 8a.1 Beyond Silicon CMOS: Progress and Challenges

      Bich-Yen Nguyen, SOITEC
      Qweltaz Gaudin
      Mariam Sadaka, SOITEC
      Christophe Maleville, SOITEC
      Walter Schwarzenbach, SOITEC
      Konstantin Boudelle
      Christophe Figuet
      Download Paper
  • Scott Katzer, D.

    Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
  • Shahin, David

    University of Maryland
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
  • Shamsi, Sajid

    Qorvo.Inc
    • 4.2 Reducing Power vs. Time (PVT) Failure in BiFET2 Device Technology

      Sajid Shamsi, Qorvo.Inc
      Download Paper
  • Shen, Shyh-Chiang

    Georgia Institute of Technology
    • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

      Tsung-Ting Kao, Georgia Institute of Technology,
      Xiao-Jia Jia, Georgia Institute of Technology
      Yuh-Shiuan Liu, Georgia Institute of Technology
      Theeradetch Detchprohm, Georgia Tech
      Russell Dupuis, Georgia Tech
      Shyh-Chiang Shen, Georgia Institute of Technology
      Download Paper
  • Shimomura, Satoshi

    • 12.9 Improved Optical Quality and 1.26 μm Light Emission from (411) GaAsBi /GaAs MQWs Grown by MBE

      Pallavi Patil
      Fumitaroh Ishikawa
      Satoshi Shimomura
      Download Paper
  • Shooshtari, A

    University of Maryland
    • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

      Carlton Creamer, BAE Systems Inc
      P. C. Chao, MEC, BAE Systems, IQE
      K K Chu, BAE Systems
      A Kassinos, BAE Systems
      G Campbell, Science Research Laboratories, Inc.
      H Eppich, Science Research Laboratories, Inc.
      A Shooshtari, University of Maryland
      S Dessiatoun, University of Maryland
      M Ohadi, University of Maryland
      C McGray, Modern Microsystems
      R Kallaher, Modern Microsystems
      Download Paper
  • Siefer, Gerald

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Silvestri, Marco

    Infineon Technologies Austria AG
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Singh, Manjeet

    Skyworks Solutions, Inc.
    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
  • Sivananthan, A

    Booz-Allen-Hamilton
    • 7a.1 Developing a New Thermal Paradigm for Gallium Nitride (GaN) Device Technology

      John Blevins, Air Force Research Laboratory
      Glen Via, AFRL
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A Sivananthan, Booz-Allen-Hamilton
      Download Paper
  • Skelton, Wade

    Qorvo Inc.
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Smith, David

    Arizona State University
    • 10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing

      Byungjae Kim, University of Florida
      Shihyun Ahn, University of Florida
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida
      David Smith, Arizona State University
      Tsung-Sheng Kang, University of Florida
      Junhao Zhu
      Download Paper
  • Soirez, Lovelace

    Novati
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Stolz, Simon

    United Monoloihtic Semiconductors GmbH
    • 10b.1 RF-WLR Investigation on 0.5µm AlGaN-GaN HEMTs

      Bernd Schauwecker, United Monolithic Semiconductors
      Simon Stolz, United Monoloihtic Semiconductors GmbH
      Download Paper
  • Storm, David

    US Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
  • Sun, Huarui

    University of Bristol
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Sun, Mike

    Skyworks Solutions, Inc.
    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
    • 5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

      Andre Metzger
      Jiang Li, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Cristian Cismaru, Skyworks Solutions, Inc.
      Jiro Yota
      Download Paper
  • Sutherlin, K.A.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • T Li, H

    WIN Semiconductors Corp.
    • 6b.2 An Effective Data Analysis Approach to Identify Source of Parametric Performance Variations for GaAs Manufacturing

      Mingwei Tsai, WIN semiconductors
      H T Li, WIN Semiconductors Corp.
      H F Tsai, WIN Semiconductors Corp.
      J W Chen, WIN Semiconductors Corp.
      W H Wang, WIN Semiconductors Corp.
      Download Paper
  • Tabatabaie Alavi, Kamal

    Raytheon Company, Integrated Defense Systems
    • 10a.5 An Evaporation Lift Off Process with Unidirectional Conformal Coverage

      Kezia Cheng, MACOM Technology Solution
      Christopher Macdonald
      Kamal Tabatabaie Alavi, Raytheon Company, Integrated Defense Systems
      Download Paper
  • Tadjer, Marko

    Naval Research Laboratory
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
    • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

      Marko Tadjer, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Takayesu, Guy

    Qorvo
    • 7b.5 Analysis and Solution to Ion Trim Drift Utilizing Software and a Residual Gas Analyzer

      Eric McCormick, Qorvo, Inc.
      Romek Bobkowski, Qorvo, Inc.
      Karsten Mausolf, Qorvo
      Guy Takayesu, Qorvo
      Dario Nappa, TriQuint Semiconductor,TX
      Francis Celii, Qorvo
      Mike McClure
      Craig Hall, Qorvo
      Joseph Raff, Qorvo
      Download Paper
  • Tatum, Jim

    Finisar
    • 2.3 Vertical Cavity Surface Emitting Lasers in Data Networks and Consumer Devices

      Jim Tatum, Finisar
      Download Paper
  • Tetlak, S.E.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Theimer, J.P.

    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Thomen, Jason

    Northrop Grumman Corporation
    • 6a.3 Reduction of Thin Film Stress-induced Micro-masking by Using Ti/Ni Hard Mask for High Power SiC Transistor Fabrication

      Shamima Afroz, Northrop Grumman
      Jason Thomen, Northrop Grumman Corporation
      James Oliver, Northrop Grumman Corporation
      Evan Jones, Wolfspeed | A Cree Company
      Download Paper
  • Tibbits, Thomas

    • 5b.2 InP based engineered substrates for CPV cells above 46% of efficiency

      Eric Guiot, SOITEC
      Frank Dimroth, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
      Alexis Drouin, SOITEC S.A.
      Charlotte Drazek
      Agnès de Buttet
      Thomas Tibbits
      Paul Beutel
      Christian Karcher
      Eduard Oliva
      Gerald Siefer
      Download Paper
  • Tokuda, Hirokuni

    University of Fukui
    • 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

      Jie Hong Ng, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Torres, Alphonse

    CEA, Leti
    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Trichur, Ramachandran

    • 6a.5 Temporary Bonding for Backside Processing of 150-mm SiC Wafers

      Ramachandran Trichur
      Jayson Cooper
      Molly Hladik, Brewer Science, Inc
      Lou Pagentine, Qorovo, Inc
      Download Paper
  • Trimble, Tina

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Theodore Kennedy, Raytheon IDS
      Lovelace Soirez, Novati
      John Bettencourt, Raytheon IDS
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      William Davis
      Download Paper
  • Tsai, Mingwei

    WIN semiconductors
    • 6b.2 An Effective Data Analysis Approach to Identify Source of Parametric Performance Variations for GaAs Manufacturing

      Mingwei Tsai, WIN semiconductors
      H T Li, WIN Semiconductors Corp.
      H F Tsai, WIN Semiconductors Corp.
      J W Chen, WIN Semiconductors Corp.
      W H Wang, WIN Semiconductors Corp.
      Download Paper
  • Tsai, Shu-Hsiao

    WIN Semiconductors Corp
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Twitchen, Daniel

    Element Six Technologies
    • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

      Martin Kuball, University of Bristol
      Huarui Sun, University of Bristol
      Dong Liu, University of Oxford, University of Bristol
      James Pomeroy, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Tyhach, Matthew

    Raytheon Company
    • 7a.3 GaN on Diamond: Pushing the Boundaries of Conventional MMIC Design and Fabrication

      D. Altman
      Matthew Tyhach, Raytheon Company
      V. Kaper
      J. Sanctuary
      Download Paper
  • Uren, Michael

    University of Bristol
    • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

      Alexander Pooth, University of Bristol
      Michael Uren, University of Bristol
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Martin Kuball, University of Bristol
      Download Paper
    • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

      Serge karboyan, University of Bristol
      Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
      James Pomeroy, University of Bristol
      Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
      Michael Uren, University of Bristol
      Peter Moens, ON Semiconductor, Corp. R&D
      Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
      Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
      Martin Kuball, University of Bristol
      Download Paper
  • Vaidyanathan, Kaushik

    Qorvo Inc.
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Vandendaele, William

    CEA, Leti
    • 9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications

      Janina Moereke
      Erwan Morvan, CEA, Leti
      William Vandendaele, CEA, Leti
      Fabienne Allain, CEA, Leti
      Alphonse Torres, CEA, Leti
      Matthew Charles, CEA, Leti
      Marc Plissonnier, CEA, Leti
      Download Paper
  • Via, Glen

    AFRL
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
    • 7a.1 Developing a New Thermal Paradigm for Gallium Nitride (GaN) Device Technology

      John Blevins, Air Force Research Laboratory
      Glen Via, AFRL
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A Sivananthan, Booz-Allen-Hamilton
      Download Paper
  • W Chen, J

    WIN Semiconductors Corp.
    • 6b.2 An Effective Data Analysis Approach to Identify Source of Parametric Performance Variations for GaAs Manufacturing

      Mingwei Tsai, WIN semiconductors
      H T Li, WIN Semiconductors Corp.
      H F Tsai, WIN Semiconductors Corp.
      J W Chen, WIN Semiconductors Corp.
      W H Wang, WIN Semiconductors Corp.
      Download Paper
  • Waco, Robert

    Qorvo Inc.
    • 7b.2 Fabrication Process Induced ESD Damage of MIM Capacitors on a 0.15um pHEMT Process

      Robert Waco, Qorvo Inc.
      Rose Emergo, Qorvo, Inc.
      Steve Brockett, Qorvo, Inc.
      Tertius Rivers
      Yiping Wang, Qorvo Inc.
      Download Paper
  • Wahl, Michael

    IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
    • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

      Martin Huber, Infineon Technologies Austria AG
      Ingo Daumiller, Infineon Technologies Austria AG
      Andrei Andreev, Infineon Technologies Austria AG
      Marco Silvestri, Infineon Technologies Austria AG
      Lauri Knuuttila, Infineon Technologies Austria AG
      Michael Wahl, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Michael Kopnarski, IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
      Alberta Bonanni, Johannes Kepler University Linz
      Anders Lundskog, Infineon Technologies Austria AG
      Download Paper
  • Walker, Mark

    Cobham Advanced Electronic Solutions
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Walker Jr, Dennis

    Air Force Research Laboatory, Sensors Directorate
    • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

      James Gillespie, Air Force Research Laboratory
      Kelson Chabak, Air Force Research Laboratory
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Darren Ferwalt, Cobham Advanced Electronic Systems
      David Frey, Cobham Advanced Electronic Systems
      Jeremy Gassmann, Cobham Advanced Electronic Systems
      Mark Walker, Cobham Advanced Electronic Solutions
      Ryan Gilbert, Wyle Laboratories
      Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
      Glen Via, AFRL
      A.J. Green
      K.D. Leedy
      R.K. Mongia
      B.S. Poling
      K.A. Sutherlin
      S.E. Tetlak
      J.P. Theimer
      G.H. Jessen
      Download Paper
  • Wallace, Michelle

    Qorvo
    • 6b.5 Outlier Labeling Method for Univariate Data for Module Test and Die Sort

      Thorsten Saeger
      Brian Kleven, Qorvo
      Ingrid Otero, Qorvo
      Michelle Wallace, Qorvo
      Randi Ziglar, Qorvo
      Download Paper
  • Wang, Curtis

    University of Illinois at Urbana-Champaign
    • 6a.2 Inductively Coupled Plasma Dry Etching Process Development for > 50 Gb/s 850 nm Oxide-Confined VCSELs

      Michael Liu
      Curtis Wang, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
    • 12.8 Microwave Equivalent Circuit Modeling of 28 GHz Modulated 850 nm Oxide-Confined VCSELs

      Curtis Wang, University of Illinois at Urbana-Champaign
      Michael Liu
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Wang, Hao-Yu

    Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    • 12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate

      Hsien-Chin Chiu, Chang Gung University
      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Yuan-Hsiang Cheng
      Download Paper
  • Wang, Hou-Yu

    Chang Gung University
    • 12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate

      Hsien-Chin Chiu, Chang Gung University
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hou-Yu Wang, Chang Gung University
      Jen-Inn Chyi, National Central University
      Download Paper
  • Wang, Hsiang-Chun

    Chang Gung University
    • 12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate

      Hsien-Chin Chiu, Chang Gung University
      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Yuan-Hsiang Cheng
      Download Paper
    • 12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate

      Hsien-Chin Chiu, Chang Gung University
      Li-Yi Peng, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hou-Yu Wang, Chang Gung University
      Jen-Inn Chyi, National Central University
      Download Paper
  • Wang, Junxi

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

      Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Tongbo Wei
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jinmin Li, NAURA Technology Group Co., Ltd.
      Download Paper
  • WANG, Sizhen

    North Carolina State University
    • 5b.4 GaN PN Junction Diode Based on Heated Magnesium Implantation And High Temperature Annealing

      Sizhen WANG, North Carolina State University
      In Hwan JI, North Carolina State University
      Alex Huang, North Carolina State University
      Download Paper
  • Wang, Xiaolei

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Wang, Xinghua

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Wang, Yiping

    Qorvo Inc.
    • 7b.2 Fabrication Process Induced ESD Damage of MIM Capacitors on a 0.15um pHEMT Process

      Robert Waco, Qorvo Inc.
      Rose Emergo, Qorvo, Inc.
      Steve Brockett, Qorvo, Inc.
      Tertius Rivers
      Yiping Wang, Qorvo Inc.
      Download Paper
  • Wang, Yu

    Qorvo, Inc
    • 7b.1 Automated Optical Inspection (AOI) For Quality Improvement

      Yu Wang, Qorvo, Inc
      Tom Cheng, Qorvo
      Crystal Chueng, Qorvo
      Patrick Carroll, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Download Paper
  • Wang, Yu-Chi

    WIN Semiconductors Corp
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Watanabe, Monte

    Northrop Grumman Aerospace Systems
    • 7a.4 GaN MMIC Impingement Jet Cooled Embedded Diamond

      Vincent Gambin
      Benjamin Poust
      Dino Ferizovic, Northrop Grumman Aerospace Systems
      Monte Watanabe, Northrop Grumman Aerospace Systems
      Gary Mandrusiak, GE Global Research
      Thomas Dusseault
      Download Paper
  • Weaver, Bradley

    U.S. Naval Research Laboratory
    • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Bradley Weaver, U.S. Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      David Shahin, University of Maryland
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Download Paper
  • Wei, Ke

    Institute of Microelectronics, Chinese Academy of Sciences
    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Wei, Tongbo

    • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

      Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Tongbo Wei
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jinmin Li, NAURA Technology Group Co., Ltd.
      Download Paper
  • Weng, Chang'e

    Qorvo
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Wheeler, Virginia

    U.S. Naval Research Laboratory
    • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

      David Meyer, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      D. Scott Katzer, Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Matthew Hardy, US Naval Research Laboratory
      Download Paper
    • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Tatyana Feygelson, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Williams, Dennis

    WIN Semiconductors Corp
    • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

      Ju-Hsien Lin, WIN Semiconductors Corp.
      Rei-Bin Chiou, WIN Semiconductors Corp.
      Jung-Hao Hsu, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Chia-Ta Chang, WIN Semiconductors Corp.
      Chang-Ho Li, WIN Semiconductors Corp.
      Tung-Yao Chou, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Winoto, Ardy

    University of Illinois at Urbana Champaign
    • 10a.2 Nonalloyed Refractory Metals for Self-Aligned InP HBT Emitter Contacts with InAs/InGaAs Emitter Cap

      Ardy Winoto, University of Illinois at Urbana Champaign
      Junyi Qiu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Worsley, Pam

    Qorvo, Inc
    • 7b.4 Using Six-Sigma Methodology to Reduce Metal-Insulator-Metal Capacitance Density Variance

      Jing Yao, Qorvo, Inc
      Lou Pagentine, Qorovo, Inc
      Dan Groft, Qorvo, Inc
      Pam Worsley, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Patrick Carroll, Qorvo, Inc
      Download Paper
  • Xiang, Jinjuan

    • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
      Shiping Guo, IQE RF LLC
      Junfeng Li, Chinese Academy of Sciences
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Chao Zhao, Chinese Academy of Sciences
      Jinjuan Xiang
      Shumin Chai
      Yankui Li
      Download Paper
  • Yabuhara, Yoshiki

    Sumitomo Electric Industries, Ltd, Itami
    • 5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate

      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd.
      Kazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.
      Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.
      Yoshiaki Hagi, Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper
  • Yamamoto, Masayoshi

    Shimane University
    • 8b.1 Benefits and Requirements of Using SiC and/or GaN Power Switching Devices for “Real” Power Control Systems

      Masayoshi Yamamoto, Shimane University
      Download Paper
  • Yan, Jianchang

    Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

      Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Tongbo Wei
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jinmin Li, NAURA Technology Group Co., Ltd.
      Download Paper
  • Yang, Jinhong

    Qorvo
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Yang, Yinbao

    Qorvo, Inc.
    • 6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

      Vivian Li, Qorvo Inc.
      Wade Skelton, Qorvo Inc.
      Yinbao Yang, Qorvo, Inc.
      Andrew Ketterson, Qorvo Inc.
      Michael Lube, Qorvo
      Harold Isom, Qorvo
      Cathy Lee, Qorvo Inc.
      Rob Kraft, Qorvo Inc.
      Download Paper
  • Yao, Jing

    Qorvo, Inc
    • 7b.4 Using Six-Sigma Methodology to Reduce Metal-Insulator-Metal Capacitance Density Variance

      Jing Yao, Qorvo, Inc
      Lou Pagentine, Qorovo, Inc
      Dan Groft, Qorvo, Inc
      Pam Worsley, Qorvo, Inc
      Zach Reitmeier, Qorvo, Inc
      Patrick Carroll, Qorvo, Inc
      Download Paper
  • Yoshida, Takehiro

    Sciocs Company Limited
    • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tomoyoshi Mishima, Hosei University
      Tohru Nakamura, Hosei University
      Download Paper
  • Yoshida, W

    Northrop Grumman Corporation
    • 4.4 A Terahertz Capable 25 nm InP HEMT MMIC Process

      William Deal, Northrop Grumman Corporation
      W Yoshida, Northrop Grumman Corporation
      Xiao Bing Mei, Northrop Grumman Corporation
      M Lange, Northrop Grumman Corporation
      Z Zhou, Northrop Grumman Corporation
      J Lee, Northrop Grumman Corporation
      P H Liu, Northrop Grumman Corporation
      K Leong, Northrop Grumman Corporation
      Download Paper
  • Yota, Jiro

    • 4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process

      Jiang Li, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Jiro Yota
      Cristian Cismaru, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Download Paper
    • 5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

      Andre Metzger
      Jiang Li, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Ravi Ramanathan
      Cristian Cismaru, Skyworks Solutions, Inc.
      Jiro Yota
      Download Paper
  • Yu, Kun

    Xi’an Jiaotong University
    • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs

      Kun Yu, Xi’an Jiaotong University
      Chao Liu, Hong Kong University of Science and Technology
      Huaxing Jiang, Hong Kong University of Science and Technology
      Xing Lu, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Anping Zhang, Xi'an Jiaotong University
      Download Paper
  • Zampardi, Peter

    Qorvo Inc.
    • 5a.2 Accurate Prediction of Resistor Variation using Minimum Sized Five Resistor TLM

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Crystal Chueng, Qorvo
      Brian Moser, Qorvo, Inc.
      Peter Zampardi, Qorvo Inc.
      Download Paper
  • Zevenbergen, Brian

    Qorvo, Inc.
    • 10a.1 Uniformity Improvement and Defect Reduction of NiCr Thin Film Resistor

      Chang’e Weng, Qorvo
      Jinhong Yang, Qorvo
      Ronald Herring, Qorvo
      Don Hamilton, Qorvo
      Kaushik Vaidyanathan, Qorvo Inc.
      Brian Zevenbergen, Qorvo, Inc.
      Fred Pool, Qorvo
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper
  • Zhang, Anping

    Xi'an Jiaotong University
    • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs</