-
A Armour, Eric
Veeco Instruments, Inc-
8.1 Advances in MOCVD Technology for III-V Photonics
Eric A Armour, Veeco Instruments, Inc
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-
A Carlson, John
University of Illinois at Urbana-Champaign-
14.1 Epitaxial Bonding and Transfer for Heterogeneous Integration of Electronic-Photonic Circuitry
John A Carlson, University of Illinois at Urbana-ChampaignPatrick Su, University of Illinois at Urbana-ChampaignJohn M Dallesasse, University of Illinois at Urbana-Champaign
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A Mclain, Michael
-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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A. Borek, Mark
Skyworks Solutions, Inc.-
4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing
Lam T. Luu-Henderson, Skyworks Solutions, Inc.Mark A. Borek, Skyworks Solutions, Inc.John W. Bonk, Skyworks Solutions, Inc.Mehran Janani, Skyworks Solutions, Inc.
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A. Middlebrooks, Joseph
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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Aigner, Robert
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Aktas, Ozgur
QROMIS, USA-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies -
14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory
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Alema, Fikadu
Agnitron Technology Incorporated, Chanhassen, MN 55317, USA-
13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics
Ross Miller, Agnitron TechnologyFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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Almeida, Carlos
Semilab SDI-
5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDICarlos Almeida, Semilab SDIAndrew Findlay, Semilab SDIJ. Lagowski, Semilab SDI
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Atherton, John
MACOM-
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Georges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology
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B Woodard, Elena
Skyworks Solutions, Inc., Newbury Park, CA-
9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications
Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CADaniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CAStephen Vargo, SPTS Technologies, Inc.Miki Takagi, SPTS Technologies, Inc.Michael Blair, SPTS Technologies, Inc.
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Bajaj, Sanyam
The Ohio State University, Columbus-
14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity
Shahadat H Sohel, The Ohio State University, ColumbusSanyam Bajaj, The Ohio State University, ColumbusTowhidur Razzak, The Ohio State University, ColumbusDavid J Meyer, U.S. Naval Research Laboratory, Washington, DCSiddharth Rajan, Ohio State University
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Barrett, Jason
MACOM-
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Georges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology
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Basceri, Cem
QROMIS, USA-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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Bergner, Wolfgang
Infineon Technologies Austria AG-
13.1 Performance and Manufacturing Perspectives of SiC T-MOS Devices
Martin Huber, Infineon Technologies Austria AGDethard Peters, Infineon Technologies AGWolfgang Bergner, Infineon Technologies Austria AG
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Beyer, C.
Siltectra GmbH-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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Blair, Michael
SPTS Technologies, Inc.-
9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications
Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CADaniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CAStephen Vargo, SPTS Technologies, Inc.Miki Takagi, SPTS Technologies, Inc.Michael Blair, SPTS Technologies, Inc.
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Blevins, John
Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH-
13.5 Growth of 50mm Beta-Gallium Oxide (β-Ga2O3) Substrates
John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
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Bondarenko, Volodymyr
Qorvo-
4.4 Plating Defect Detection and Process Control
Michael G Meeder, QorvoVolodymyr Bondarenko, Qorvo
-
-
Boon Lee, Kean
University of Sheffield-
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol
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Botwin, Brad
U.S. Department of Commerce, Bureau of Industry and Security-
6.3 The Status of the U.S. Integrated Circuit Design and Manufacturing Industry: Capabilities and Challenges
Brad Botwin, U.S. Department of Commerce, Bureau of Industry and Security
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-
Brown, Tom
Skyworks Solutions, Inc.-
9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications
Sarang Kulkarni, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc. -
9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective
Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Sarang Kulkarni, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc.
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Brueckner, Peter
Fraunhofer IAF-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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Brunner, Frank
Ferdinand-Braun-Institut (FBH)-
3.3 Novel approach for ED transistors integration in GaN HEMT technology
Konstantin Y Osipov, Ampleon Netherlands B.V.I. Ostermay, Ferdinand-Braun-Institut (FBH)Frank Brunner, Ferdinand-Braun-Institut (FBH)
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Bubber, Randhir
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
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C Wood, Peter
SAMCO Inc.-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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C. Fitch, Robert
Sensors Directorate, Air Force Research Laboratory-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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Carter, James
MACOM-
4.1 SPC Process Revitalization in a High Mix Low Volume Fab
Jay D Alexander, MACOMEric Finchem, MACOMJames Carter, MACOM -
8.5 Manufacturing of lasers and photodetectors on 100mm InP in GaAs IC fabrication facility
Debdas Pal, MACOM TechnologyJames Carter, MACOMLisza Elliot, MACOM
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-
Chang, Yu-Wei
WIN Semiconductors Corp-
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Chen, C.
Momentive Technologies-
14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingC. Chen, Momentive TechnologiesLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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Chen, Chen-Yu
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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Chen, Chia-Hao
WIN Semiconductors Corp-
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
-
-
Cheng, Zhe
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire
Shuai Yang, Institute of Semiconductors, Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing -
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
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Christou, Aristos
University of Maryland-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
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-
D Alexander, Jay
MACOM-
4.1 SPC Process Revitalization in a High Mix Low Volume Fab
Jay D Alexander, MACOMEric Finchem, MACOMJames Carter, MACOM
-
-
D Hodge, Michael
Akoustis Technologies-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Dark, Charles
Qorvo-
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
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Diep, Buu
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo -
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
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Du, Jhih-Han
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Dumont, Fabien
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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E Butler, James
Euclid TechLabs-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
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E. Luna, Lunet
NRC Postdoctoral Fellow Residing at NRL-
14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory
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Elliot, Lisza
MACOM-
8.5 Manufacturing of lasers and photodetectors on 100mm InP in GaAs IC fabrication facility
Debdas Pal, MACOM TechnologyJames Carter, MACOMLisza Elliot, MACOM
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-
Fallon, Ken
Akoustis-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Fan, Wei
Momentive Performance Materials Inc-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Fattinger, Gernot
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Feezell, Daniel
Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Feygelson, Tatyana
U. S. Naval Research Laboratory-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory
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Finchem, Eric
MACOM-
4.1 SPC Process Revitalization in a High Mix Low Volume Fab
Jay D Alexander, MACOMEric Finchem, MACOMJames Carter, MACOM
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Findlay, Andrew
Semilab SDI-
5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDICarlos Almeida, Semilab SDIAndrew Findlay, Semilab SDIJ. Lagowski, Semilab SDI
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Formicone, Gabriele
Integra Technologies, Inc.-
3.1 A 15 W/mm GaN Technology for C-band Pulsed Radars with 45% PAE
Gabriele Formicone, Integra Technologies, Inc.
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Frey, D
Cobham Advanced Electronic Solutions-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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Fuentes, Erika
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Fujikura, Hajime
SCIOCS-
7.1 Real potential of GaN electric devices coming from GaN on GaN
Yohei Otoki, SCIOCSHajime Fujikura, SCIOCSTakefumi Yoshida, SCIOCSFumimasa Harikiri, SCIOCSTetsuji Fujimoto, SCIOCS
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Fujimoto, Tetsuji
SCIOCS-
7.1 Real potential of GaN electric devices coming from GaN on GaN
Yohei Otoki, SCIOCSHajime Fujikura, SCIOCSTakefumi Yoshida, SCIOCSFumimasa Harikiri, SCIOCSTetsuji Fujimoto, SCIOCS
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G Meeder, Michael
Qorvo-
4.4 Plating Defect Detection and Process Control
Michael G Meeder, QorvoVolodymyr Bondarenko, Qorvo
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Garcia, Sergio
Skyworks Solutions-
12.1 Global Cycle Time Reduction Methodologies
Juan Velasquez, Skyworks SolutionsSergio Garcia, Skyworks SolutionsHeather Knoedler, Skyworks Solutions
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Gassmann, J
Cobham Advanced Electronic Solutions-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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Gibb, Shawn
Akoustis-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Godejohann, Birte-Julia
Fraunhofer IAF-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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Goto, Ken
Tamura Corporation-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Graham, Samuel
Georgia Institute of Technology-
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Georges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology
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Guiot, Eric
SOITEC-
7.5 Innovative GaN based engineered substrates for power applications
Eric Guiot, SOITEC
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Gupta, Varun
KLA-Tencor Limited-
7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle
Fumimasa Horikiri, Sciocs Company LimitedYoshinobu Narita, Sciocs Company LimitedTakehiro Yoshida, Sciocs Company LimitedChikashi Ito, KLA-Tencor LimitedVarun Gupta, KLA-Tencor LimitedAnoop Somanchi, KLA-Tencor Limited
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H Flemming, Jeb
3D Glass Solutions, Inc.-
2.3 Photosensitive Glass-Ceramics for Heterogeneous Integration
Jeb H Flemming, 3D Glass Solutions, Inc.
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H Jessen, Gregg
Sensors Directorate, Air Force Research Laboratory-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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H Leach, Jacob
Kyma Technologies-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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-
H Sohel, Shahadat
The Ohio State University, Columbus-
14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity
Shahadat H Sohel, The Ohio State University, ColumbusSanyam Bajaj, The Ohio State University, ColumbusTowhidur Razzak, The Ohio State University, ColumbusDavid J Meyer, U.S. Naval Research Laboratory, Washington, DCSiddharth Rajan, Ohio State University
-
-
Hagi, Yoshiaki
Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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-
Hall, Craig
Qorvo-
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
-
-
Hamilton, Pat
Qorvo Inc.-
4.3 Systematic Data Mining Approaches for Yield Improvement
Yiping Wang, Qorvo Inc.Pat Hamilton, Qorvo Inc.Robert Waco, Qorvo Inc.Jeremy Middleton*, TriQuint Semiconductor, Inc.
-
-
Harikiri, Fumimasa
SCIOCS-
7.1 Real potential of GaN electric devices coming from GaN on GaN
Yohei Otoki, SCIOCSHajime Fujikura, SCIOCSTakefumi Yoshida, SCIOCSFumimasa Harikiri, SCIOCSTetsuji Fujimoto, SCIOCS
-
-
Hatta, Naoki
SICOXS Corporation-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
-
-
He, Jiabei
The Hong Kong University of Science and Technology-
5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric
Jiabei He, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyZhaofu Zhang, The Hong Kong University of Science and TechnologyGaofei Tang, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology -
5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study
Zhaofu Zhang, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyJiabei He, The Hong Kong University of Science and TechnologyQingkai Qian, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology
-
-
Herrault, Florian
HRL Laboratories-
2.4 Heterogeneous Integration Technologies for Next-Generation RF and mm-Wave Subsystems
Florian Herrault, HRL Laboratories
-
-
Higashiwaki, Masataka
National Institute of Information and Communications Technology-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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-
Ho, Benny
WIN Semiconductors Corp-
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Hobart, Karl D.
U.S. Naval Research Laboratory-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory
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-
Hoi Wong, Man
National Institute of Information and Communications Technology-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Horikawa, Satoshi
Sumitomo Electric Industries, Ltd, Itami-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Horikiri, Fumimasa
Sciocs Company Limited-
7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle
Fumimasa Horikiri, Sciocs Company LimitedYoshinobu Narita, Sciocs Company LimitedTakehiro Yoshida, Sciocs Company LimitedChikashi Ito, KLA-Tencor LimitedVarun Gupta, KLA-Tencor LimitedAnoop Somanchi, KLA-Tencor Limited
-
-
Hou, Daniel
Global Communication Semiconductors, LLC-
12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry
Mo Wu, Global Communication Semiconductors, LLCWon Sang Lee, RFHIC US Corp.Daniel Hou, Global Communication Semiconductors, LLCKyong Won Lee, RFHIC Corporation
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Houlden, Rohan
Akoustis-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
-
-
Houston, Peter
University of Sheffield, Sheffield-
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol
-
-
Hsiao, Fu-Chen
North Carolina State University-
8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers
Patrick Su, University of Illinois at Urbana-ChampaignThomas O’brien Jr.Fu-Chen Hsiao, North Carolina State UniversityJohn M Dallesasse, University of Illinois at Urbana-Champaign
-
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hu,
-
14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer
-
-
Hua, Mengyuan
The Hong Kong University of Science and Technology-
5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric
Jiabei He, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyZhaofu Zhang, The Hong Kong University of Science and TechnologyGaofei Tang, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology -
5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study
Zhaofu Zhang, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyJiabei He, The Hong Kong University of Science and TechnologyQingkai Qian, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology
-
-
Huang, Chuck
WIN Semiconductors Corp.-
12.2 The Package Trend for Compound Semiconductor
Chuck Huang, WIN Semiconductors Corp.
-
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Huang, Clement
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
-
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Huang, Shih-Hui
WIN Semiconductors Corp-
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Huang, Xiaokang
Qorvo-
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
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-
Huber, Martin
Infineon Technologies Austria AG-
13.1 Performance and Manufacturing Perspectives of SiC T-MOS Devices
Martin Huber, Infineon Technologies Austria AGDethard Peters, Infineon Technologies AGWolfgang Bergner, Infineon Technologies Austria AG
-
-
I Shahin, David
University of Maryland-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
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Inomoto, Ryo
Yamaguchi University-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Isom, Harold
Qorvo-
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
-
-
Ito, Chikashi
KLA-Tencor Limited-
7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle
Fumimasa Horikiri, Sciocs Company LimitedYoshinobu Narita, Sciocs Company LimitedTakehiro Yoshida, Sciocs Company LimitedChikashi Ito, KLA-Tencor LimitedVarun Gupta, KLA-Tencor LimitedAnoop Somanchi, KLA-Tencor Limited
-
-
J Meyer, David
U.S. Naval Research Laboratory, Washington, DC-
14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity
Shahadat H Sohel, The Ohio State University, ColumbusSanyam Bajaj, The Ohio State University, ColumbusTowhidur Razzak, The Ohio State University, ColumbusDavid J Meyer, U.S. Naval Research Laboratory, Washington, DCSiddharth Rajan, Ohio State University
-
-
J Sires, Jeremiah
Skyworks Solutions, Inc.-
14.3 Reactive Sputtering: TaN Process Characterization and Post PM Qualification Improvements
Jeremiah J Sires, Skyworks Solutions, Inc.
-
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J. Chen, Kevin
The Hong Kong University of Science and Technology-
5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric
Jiabei He, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyZhaofu Zhang, The Hong Kong University of Science and TechnologyGaofei Tang, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology -
5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study
Zhaofu Zhang, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyJiabei He, The Hong Kong University of Science and TechnologyQingkai Qian, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology
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J. Green, Andrew
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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J. Kub, Fritz
U.S. Naval Research Laboratory-
14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory
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-
J. Roesch, William
TriQuint Semiconductor, Inc.-
11.1 The Reliability of Compound Semiconductors, Proving It’s Good Enough
William J. Roesch, TriQuint Semiconductor, Inc.
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Janani, Mehran
Skyworks Solutions, Inc.-
4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing
Lam T. Luu-Henderson, Skyworks Solutions, Inc.Mark A. Borek, Skyworks Solutions, Inc.John W. Bonk, Skyworks Solutions, Inc.Mehran Janani, Skyworks Solutions, Inc.
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Jhan, Richard
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Joshi, Somit
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
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Joshin, Kazukiyo
Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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-
K Berkoh, Daniel
Skyworks Solutions, Inc., Newbury Park, CA-
9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications
Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CADaniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CAStephen Vargo, SPTS Technologies, Inc.Miki Takagi, SPTS Technologies, Inc.Michael Blair, SPTS Technologies, Inc.
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K Kovi, Kiran
Euclid TechLabs-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
-
-
K. Gillespie, James
Sensors Directorate, Air Force Research Laboratory-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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K. Tiku, Shiban
Skyworks Solutions, Inc.-
12.4 New Product Introduction and Design for Manufacturability in GaAs IC Industry
Shiban K. Tiku, Skyworks Solutions, Inc.
-
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Kameyama, Takehiko
New Japan Radio Co., Ltd-
6.4 How we have continued GaAs RFIC business in Japan; Survival History of New Japan Radio
Shigeki Yamaga, New Japan Radio Co., LtdHiroyuki Yoshinaga, New Japan Radio Co., LtdTakehiko Kameyama, New Japan Radio Co., Ltd
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Kaneko, Shuichi
Sumiden Semiconductor Materials Co., Ltd, Kobe-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Kao, Yung-Chung
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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Karboyan, Serge
Nexperia. Manchester, UK-
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol
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Khouri, Kamal
NXP Semiconductors-
1.2 Automotive Industry Trends and Their Impact on the Future Vehicle
Kamal Khouri, NXP Semiconductors
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Kim, Daeho
Akoustis-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Kirste, Lutz
Fraunhofer IAF-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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Knoedler, Heather
Skyworks Solutions-
12.1 Global Cycle Time Reduction Methodologies
Juan Velasquez, Skyworks SolutionsSergio Garcia, Skyworks SolutionsHeather Knoedler, Skyworks Solutions
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Kobayashi, Takayuki
SAMCO Inc.-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Koehler, Andrew
U. S. Naval Research Laboratory-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory
-
-
Konishi, Keita
Tokyo University of Agriculture and Technology-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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-
Kotani, Junji
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Kozak, B.
Momentive Technologies-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Kraft, Robert
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Kub, Fritz
Naval Research Laboratory-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory
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Kuball, Martin
University of Bristol-
2.2 Interfacial strength and fracture toughness in bonded semiconductor materials
Dong Liu, University of Oxford, University of BristolJianbo Liang, Osaka City University, University of BristolNaoteru Shigekawa, Osaka City UniversityMartin Kuball, University of Bristol -
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol
-
-
Kulkarni, Sarang
Skyworks Solutions, Inc.-
9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications
Sarang Kulkarni, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc. -
9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective
Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Sarang Kulkarni, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc.
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-
Kumagai, Yoshinao
Tokyo University of Agriculture and Technology-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
-
-
Kuo, Jenn-Ming
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
-
-
Kuramata, Akito
Novel Crystal Technology, Inc-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
-
-
Kuzuhara, Masaaki
University of Fukui-
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Ryota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui
-
-
Lagowski, J.
Semilab SDI-
5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDICarlos Almeida, Semilab SDIAndrew Findlay, Semilab SDIJ. Lagowski, Semilab SDI
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-
Lai, Billy
Hong Kong University of Science and Technology-
14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods
Billy Lai, Hong Kong University of Science and TechnologyQiang Li, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and Technology
-
-
Lee, Soo-Min
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
-
-
Leone, Stefano
Fraunhofer IAF-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
-
-
Leong, Shan-Fong
National Taiwan University-
8.4 Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK
Chun-Yen Peng, National Taiwan UniversityChao-Hsin Wu, National Taiwan UniversityShan-Fong Leong, National Taiwan University
-
-
Li, Juan
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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-
Li, Qiang
Hong Kong University of Science and Technology-
14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods
Billy Lai, Hong Kong University of Science and TechnologyQiang Li, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and Technology
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Li, Wei
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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Liang, Jianbo
Osaka City University, University of Bristol-
2.2 Interfacial strength and fracture toughness in bonded semiconductor materials
Dong Liu, University of Oxford, University of BristolJianbo Liang, Osaka City University, University of BristolNaoteru Shigekawa, Osaka City UniversityMartin Kuball, University of Bristol
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-
Lien, Yi-Wei
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
-
-
Lin, Chia-Hung
National Institute of Information and Communications Technology-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Lin, Wayne
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Liu, Dong
University of Oxford, University of Bristol-
2.2 Interfacial strength and fracture toughness in bonded semiconductor materials
Dong Liu, University of Oxford, University of BristolJianbo Liang, Osaka City University, University of BristolNaoteru Shigekawa, Osaka City UniversityMartin Kuball, University of Bristol
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-
Lu, Hongxi
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
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Lu, Yizhou
University of Maryland-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
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Lv, Hongrui
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
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M Dallesasse, John
University of Illinois at Urbana-Champaign-
8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers
Patrick Su, University of Illinois at Urbana-ChampaignThomas O’brien Jr.Fu-Chen Hsiao, North Carolina State UniversityJohn M Dallesasse, University of Illinois at Urbana-Champaign -
14.1 Epitaxial Bonding and Transfer for Heterogeneous Integration of Electronic-Photonic Circuitry
John A Carlson, University of Illinois at Urbana-ChampaignPatrick Su, University of Illinois at Urbana-ChampaignJohn M Dallesasse, University of Illinois at Urbana-Champaign
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M. Gee, Caroline
The Aerospace Corporation-
11.2 Draft Guidelines for Space Qualification of GaN HEMT Technology
John Scarpulla, The Aerospace CorporationCaroline M. Gee, The Aerospace Corporation
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-
M. Hill, Shannon
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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-
Makiyama, Kozo
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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-
Manz, Christian
Fraunhofer IAF-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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-
May Lau, Kei
Hong Kong University of Science and Technology-
14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods
Billy Lai, Hong Kong University of Science and TechnologyQiang Li, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and Technology
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-
McClure, Mike
-
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
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Melnik, Peter
Skyworks Solutions, Inc., Woburn, MA, USA-
12.3 Operational Yield Improvements Through Application of Lean, 5S, Employee Engagement, Root Cause Investigations and Culture Change
Peter Melnik, Skyworks Solutions, Inc., Woburn, MA, USAJoseph Santa, Skyworks Solutions, Inc., Woburn, MA, USADaniel Sullivan, Skyworks Solutions, Inc., Woburn, MA, USA
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Middleton*, Jeremy
TriQuint Semiconductor, Inc.-
4.3 Systematic Data Mining Approaches for Yield Improvement
Yiping Wang, Qorvo Inc.Pat Hamilton, Qorvo Inc.Robert Waco, Qorvo Inc.Jeremy Middleton*, TriQuint Semiconductor, Inc.
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Migliaccio, James
Qorvo, Inc.-
11.3 Aspects of High Volume Test for Semiconductor Devices
James Migliaccio, Qorvo, Inc.
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-
Miller, Ross
Agnitron Technology-
13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics
Ross Miller, Agnitron TechnologyFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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Minoura, Yuichi
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Mishra, Umesh
Transphorm also Dean of Engineering UCSB-
1.3 Looking for reliability and high performance in RF and power conversion applications? Use GaN.
Umesh Mishra, Transphorm also Dean of Engineering UCSB
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Monavarian, Morteza
Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Morishige, Kouji
Sumitomo Electric Industries, Ltd, Itami-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Morishita, Masanori
Sumiden Semiconductor Materials Co., Ltd, Kobe-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Moriwake, Tatsuya
Sumiden Semiconductor Materials Co., Ltd, Kobe-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Mortensen, Donna
Qorvo-
10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo
Xiaokang Huang, QorvoCharles Dark, QorvoMike McClureBuu Diep, QorvoCraig Hall, QorvoHarold Isom, QorvoDonna Mortensen, Qorvo
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Motoyama, Shin-ichi
-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Murakami, Hisashi
Tokyo University of Agriculture and Technology-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Nakamura, Masayuki
SAMCO Inc.-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Nakamura, Norikazu
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Narita, Yoshinobu
Sciocs Company Limited-
7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle
Fumimasa Horikiri, Sciocs Company LimitedYoshinobu Narita, Sciocs Company LimitedTakehiro Yoshida, Sciocs Company LimitedChikashi Ito, KLA-Tencor LimitedVarun Gupta, KLA-Tencor LimitedAnoop Somanchi, KLA-Tencor Limited
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Natarajan, Sudarshan
Momentive Performance Materials-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Nguyen, Bang
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Ni, Ruxue
Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences-
14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingC. Chen, Momentive TechnologiesLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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Nishitani, Takashi
University of Fukui-
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Ryota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui
-
-
O'brien Jr., Thomas
-
8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers
Patrick Su, University of Illinois at Urbana-ChampaignThomas O’brien Jr.Fu-Chen Hsiao, North Carolina State UniversityJohn M Dallesasse, University of Illinois at Urbana-Champaign
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Odnoblyudov, Vladimir
QROMIS, USA-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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Ohki, Toshihiro
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Okamoto, Naoya
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Osinsky, Andrei
Agnitron Technology Incorporated, Chanhassen, MN 55317, USA-
13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics
Ross Miller, Agnitron TechnologyFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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-
Ostermay, I.
Ferdinand-Braun-Institut (FBH)-
3.3 Novel approach for ED transistors integration in GaN HEMT technology
Konstantin Y Osipov, Ampleon Netherlands B.V.I. Ostermay, Ferdinand-Braun-Institut (FBH)Frank Brunner, Ferdinand-Braun-Institut (FBH)
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Ota, Hirokazu
Sumiden Semiconductor Materials Co., Ltd, Kobe-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Otoki, Yohei
SCIOCS-
7.1 Real potential of GaN electric devices coming from GaN on GaN
Yohei Otoki, SCIOCSHajime Fujikura, SCIOCSTakefumi Yoshida, SCIOCSFumimasa Harikiri, SCIOCSTetsuji Fujimoto, SCIOCS
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Ozaki, Shiro
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Pal, Debdas
MACOM Technology-
8.5 Manufacturing of lasers and photodetectors on 100mm InP in GaAs IC fabrication facility
Debdas Pal, MACOM TechnologyJames Carter, MACOMLisza Elliot, MACOM
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Pan, Ming
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
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Paranjpe, Ajit
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
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Pate, Bradford
Naval Research Laboratory-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory
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Patel, Pinal
Akoustis Technologies-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Pavlidis, Georges
Georgia Institute of Technology-
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Georges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology
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Peng, Chun-Yen
National Taiwan University-
8.4 Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK
Chun-Yen Peng, National Taiwan UniversityChao-Hsin Wu, National Taiwan UniversityShan-Fong Leong, National Taiwan University
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Peng, Yu-Ting
University of Illinois at Urbana Champaign-
14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links
Yu-Ting Peng, University of Illinois at Urbana ChampaignDufei Wu, University of Illinois at Urbana ChampaignArdy Winoto, University of Illinois at Urbana Champaign
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Peters, Dethard
Infineon Technologies AG-
13.1 Performance and Manufacturing Perspectives of SiC T-MOS Devices
Martin Huber, Infineon Technologies Austria AGDethard Peters, Infineon Technologies AGWolfgang Bergner, Infineon Technologies Austria AG
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Ponomarev, Ilya
Euclid TechLabs-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
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Potdar, Vishwavasu
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Qian, Qingkai
The Hong Kong University of Science and Technology-
5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study
Zhaofu Zhang, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyJiabei He, The Hong Kong University of Science and TechnologyQingkai Qian, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology
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Qu, Hao
Momentive Performance Materials-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Quay, Ruediger
Fraunhofer IAF-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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Quayle, Paul
Kyma Technologies-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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R Evans, Keith
Kyma Technologies-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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R. Pinsukanjana, Paul
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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Raad, Peter
TMX Scientific and Southern Methodist University-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory
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Rajan, Siddharth
Ohio State University-
14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity
Shahadat H Sohel, The Ohio State University, ColumbusSanyam Bajaj, The Ohio State University, ColumbusTowhidur Razzak, The Ohio State University, ColumbusDavid J Meyer, U.S. Naval Research Laboratory, Washington, DCSiddharth Rajan, Ohio State University
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Razzak, Towhidur
The Ohio State University, Columbus-
14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity
Shahadat H Sohel, The Ohio State University, ColumbusSanyam Bajaj, The Ohio State University, ColumbusTowhidur Razzak, The Ohio State University, ColumbusDavid J Meyer, U.S. Naval Research Laboratory, Washington, DCSiddharth Rajan, Ohio State University
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Richter, Jan
Siltectra GmbH-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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Rishinaramangalam, Ashwin
Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Rollin, Jean-Marc
Nuvotronics Inc.-
2.1 Additive manufacturing solutions to mm-wave heterogenous circuits
Jean-Marc Rollin, Nuvotronics Inc.
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Rothemund, Ralph
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Russel, Thomas
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Sagawa, Tatsurou
SAMCO inc.-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Samukawa, Seiji
Tohoku University-
9.5 Neutral Beam Technology for Damage-free Etching Processes
Seiji Samukawa, Tohoku University
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Sang Lee, Won
RFHIC US Corp.-
12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry
Mo Wu, Global Communication Semiconductors, LLCWon Sang Lee, RFHIC US Corp.Daniel Hou, Global Communication Semiconductors, LLCKyong Won Lee, RFHIC Corporation
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Sano, Seigo
Sumitomo Electric Device Innovations, Inc.-
4.5 Mass-Production of High Reliability GaN HEMT for Wireless Communication
Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.Seigo Sano, Sumitomo Electric Device Innovations, Inc.
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Santa, Joseph
Skyworks Solutions, Inc., Woburn, MA, USA-
12.3 Operational Yield Improvements Through Application of Lean, 5S, Employee Engagement, Root Cause Investigations and Culture Change
Peter Melnik, Skyworks Solutions, Inc., Woburn, MA, USAJoseph Santa, Skyworks Solutions, Inc., Woburn, MA, USADaniel Sullivan, Skyworks Solutions, Inc., Woburn, MA, USA
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Sasaki, Kohei
Novel Crystal Technology, Inc-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Sato, Motonobu
Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Savtchouk, A.
Semilab SDI-
5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDICarlos Almeida, Semilab SDIAndrew Findlay, Semilab SDIJ. Lagowski, Semilab SDI
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Scarpulla, John
The Aerospace Corporation-
11.2 Draft Guidelines for Space Qualification of GaN HEMT Technology
John Scarpulla, The Aerospace CorporationCaroline M. Gee, The Aerospace Corporation
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Shaffer, Gregory
Momentive Performance Materials-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Shao Chang, Cheng
Win Semiconductors Corp.-
3.5 Advanced BiHEMT Technology with Quarter-um Enhancement Mode pHEMT for sub-6GHz HPUE PA Application
Cheng Shao Chang, Win Semiconductors Corp.
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Shealy, Jeffrey
Akoustis Technologies-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Shen, Ya
Akoustis-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Shigekawa, Naoteru
Osaka City University-
2.2 Interfacial strength and fracture toughness in bonded semiconductor materials
Dong Liu, University of Oxford, University of BristolJianbo Liang, Osaka City University, University of BristolNaoteru Shigekawa, Osaka City UniversityMartin Kuball, University of Bristol
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Singh, Manikant
University of Bristol-
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol
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Singh, Manjeet
Skyworks Solutions, Inc.-
9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications
Sarang Kulkarni, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc. -
9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective
Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Sarang Kulkarni, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc.
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Sinha, Saurabh
Arm Research-
6.1 III-V for Logic Applications: A Design Perspective
Saurabh Sinha, Arm Research
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Som, Shamit
MACOM-
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Georges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology
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Somanchi, Anoop
KLA-Tencor Limited-
7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle
Fumimasa Horikiri, Sciocs Company LimitedYoshinobu Narita, Sciocs Company LimitedTakehiro Yoshida, Sciocs Company LimitedChikashi Ito, KLA-Tencor LimitedVarun Gupta, KLA-Tencor LimitedAnoop Somanchi, KLA-Tencor Limited
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Splawn, Heather
Kyma Technologies-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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Stokes, Paul
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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Struble, Wayne
MACOM-
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Georges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology
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Su, Jie
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
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Su, Patrick
University of Illinois at Urbana-Champaign-
8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers
Patrick Su, University of Illinois at Urbana-ChampaignThomas O’brien Jr.Fu-Chen Hsiao, North Carolina State UniversityJohn M Dallesasse, University of Illinois at Urbana-Champaign -
14.1 Epitaxial Bonding and Transfer for Heterogeneous Integration of Electronic-Photonic Circuitry
John A Carlson, University of Illinois at Urbana-ChampaignPatrick Su, University of Illinois at Urbana-ChampaignJohn M Dallesasse, University of Illinois at Urbana-Champaign
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Suda, Jun
Nagoya University-
13.2 Comparison between GaN and SiC from the Viewpoint of Vertical Power Devices
Jun Suda, Nagoya University
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Sullivan, Daniel
Skyworks Solutions, Inc., Woburn, MA, USA-
12.3 Operational Yield Improvements Through Application of Lean, 5S, Employee Engagement, Root Cause Investigations and Culture Change
Peter Melnik, Skyworks Solutions, Inc., Woburn, MA, USAJoseph Santa, Skyworks Solutions, Inc., Woburn, MA, USADaniel Sullivan, Skyworks Solutions, Inc., Woburn, MA, USA
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Swoboda, M.
Siltectra GmbH-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF
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T. Asubar, Joel
University of Fukui-
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Ryota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui
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T. Luu-Henderson, Lam
Skyworks Solutions, Inc.-
4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing
Lam T. Luu-Henderson, Skyworks Solutions, Inc.Mark A. Borek, Skyworks Solutions, Inc.John W. Bonk, Skyworks Solutions, Inc.Mehran Janani, Skyworks Solutions, Inc.
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Tadatomo, Kazuyuki
Yamaguchi University-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Tadjer, Marko
U.S. Naval Research Laboratory-
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, U.S. Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, U. S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFritz Kub, Naval Research Laboratory
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Tadjer, Marko J.
U.S. Naval Research Laboratory-
14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory
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Takagi, Miki
SPTS Technologies, Inc.-
9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications
Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CADaniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CAStephen Vargo, SPTS Technologies, Inc.Miki Takagi, SPTS Technologies, Inc.Michael Blair, SPTS Technologies, Inc.
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Takatani, Shinichiro
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Takayama, Hidetoshi
Sumiden Semiconductor Materials Co., Ltd, Kobe-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Tang, Gaofei
The Hong Kong University of Science and Technology-
5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric
Jiabei He, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyZhaofu Zhang, The Hong Kong University of Science and TechnologyGaofei Tang, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology
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Thapa, Aayush
University of Maryland-
14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels
David I Shahin, University of MarylandKiran K Kovi, Euclid TechLabsAayush Thapa, University of MarylandYizhou Lu, University of MarylandIlya Ponomarev, Euclid TechLabsJames E Butler, Euclid TechLabsAristos Christou, University of Maryland
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Tiku, Shiban
Skyworks Solutions, Inc.-
9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications
Sarang Kulkarni, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc. -
9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective
Tom Brown, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Sarang Kulkarni, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc.
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Tokuda, Hirokuni
University of Fukui-
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Ryota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui
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Tomek, Creighton
Momentive Performance Materials-
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies
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Tseng, Andy
WIN Semiconductors Corp-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Tsuji, Osamu
Yamaguchi University-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Tucker, Eric
Veeco Instruments-
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments
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Udwary, Kevin
Kyma Technologies-
14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds
Jacob H Leach, Kyma TechnologiesKevin Udwary, Kyma TechnologiesPaul Quayle, Kyma TechnologiesVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USAOzgur Aktas, QROMIS, USAHeather Splawn, Kyma TechnologiesKeith R Evans, Kyma Technologies
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Ueno, Takahiro
Mitsubishi Electric Corporation-
9.1 0.20um gate length formation technology by using i-line stepper exposure and chemical shrink process
Takahiro Ueno, Mitsubishi Electric Corporation
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Vargo, Stephen
SPTS Technologies, Inc.-
9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications
Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CADaniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CAStephen Vargo, SPTS Technologies, Inc.Miki Takagi, SPTS Technologies, Inc.Michael Blair, SPTS Technologies, Inc.
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Velasquez, Juan
Skyworks Solutions-
12.1 Global Cycle Time Reduction Methodologies
Juan Velasquez, Skyworks SolutionsSergio Garcia, Skyworks SolutionsHeather Knoedler, Skyworks Solutions
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Vetury, Ramakrishna
Akoustis-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Volatier, Alexandre
Qorvo-
10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization
Paul Stokes, QorvoGernot Fattinger, QorvoFabien Dumont, QorvoRalph Rothemund, QorvoAlexandre Volatier, QorvoRobert Aigner, QorvoErika Fuentes, QorvoThomas Russel, QorvoVishwavasu Potdar, QorvoBang Nguyen, QorvoBuu Diep, QorvoRobert Kraft, Qorvo
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W. Bonk, John
Skyworks Solutions, Inc.-
4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing
Lam T. Luu-Henderson, Skyworks Solutions, Inc.Mark A. Borek, Skyworks Solutions, Inc.John W. Bonk, Skyworks Solutions, Inc.Mehran Janani, Skyworks Solutions, Inc.
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W. Peterson, Bror
Qorvo Inc.-
6.2 The Case for All Digital Beamforming
Bror W. Peterson, Qorvo Inc.
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W. Vargason, Kevin
Intelligent Epitaxy Technology, Inc.-
8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE
Juan Li, Intelligent Epitaxy Technology, Inc.Shannon M. Hill, Intelligent Epitaxy Technology, Inc.Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.Wei Li, Intelligent Epitaxy Technology, Inc.Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
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Waco, Robert
Qorvo Inc.-
4.3 Systematic Data Mining Approaches for Yield Improvement
Yiping Wang, Qorvo Inc.Pat Hamilton, Qorvo Inc.Robert Waco, Qorvo Inc.Jeremy Middleton*, TriQuint Semiconductor, Inc.
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Walker, Mark
Cobham Advanced Electronic Solutions-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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Walker Jr., Dennis E.
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,-
3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs
Robert C. Fitch, Sensors Directorate, Air Force Research LaboratoryJames K. Gillespie, Sensors Directorate, Air Force Research LaboratoryAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,D Frey, Cobham Advanced Electronic SolutionsJ Gassmann, Cobham Advanced Electronic SolutionsMark Walker, Cobham Advanced Electronic SolutionsGregg H Jessen, Sensors Directorate, Air Force Research Laboratory
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Wang, Fraser
WIN Semiconductors Corp-
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Wang, Junxi
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire
Shuai Yang, Institute of Semiconductors, Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing -
14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingC. Chen, Momentive TechnologiesLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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Wang, Wei-Chou
WIN Semiconductors Corp.-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Wang, Yiping
Qorvo Inc.-
4.3 Systematic Data Mining Approaches for Yield Improvement
Yiping Wang, Qorvo Inc.Pat Hamilton, Qorvo Inc.Robert Waco, Qorvo Inc.Jeremy Middleton*, TriQuint Semiconductor, Inc.
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Weimar, Andreas
Osram-
1.1 Innovated volume production for III-V Compound Semiconductor LED and Laserchips at OSRAM Opto Semiconductors
Andreas Weimar, Osram
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Wilson, Marshall
Semilab SDI, Tampa, FL,-
5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDICarlos Almeida, Semilab SDIAndrew Findlay, Semilab SDIJ. Lagowski, Semilab SDI
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Winoto, Ardy
University of Illinois at Urbana Champaign-
14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links
Yu-Ting Peng, University of Illinois at Urbana ChampaignDufei Wu, University of Illinois at Urbana ChampaignArdy Winoto, University of Illinois at Urbana Champaign
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Winters, Mary
Akoustis Technologies-
10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates
Ramakrishna Vetury, AkoustisDaeho Kim, AkoustisKen Fallon, AkoustisMary Winters, Akoustis TechnologiesShawn Gibb, AkoustisPinal Patel, Akoustis TechnologiesMichael D Hodge, Akoustis TechnologiesMichael A MclainYa Shen, AkoustisRohan Houlden, AkoustisJeffrey Shealy, Akoustis Technologies
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Wohlmuth, Walter
Vanguard International Semiconductor Corporation, Taiwan-
3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors Corp.Clement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan -
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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Won Lee, Kyong
RFHIC Corporation-
12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry
Mo Wu, Global Communication Semiconductors, LLCWon Sang Lee, RFHIC US Corp.Daniel Hou, Global Communication Semiconductors, LLCKyong Won Lee, RFHIC Corporation
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Wu, Chao-Hsin
National Taiwan University-
8.4 Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK
Chun-Yen Peng, National Taiwan UniversityChao-Hsin Wu, National Taiwan UniversityShan-Fong Leong, National Taiwan University
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Wu, Dufei
University of Illinois at Urbana Champaign-
14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links
Yu-Ting Peng, University of Illinois at Urbana ChampaignDufei Wu, University of Illinois at Urbana ChampaignArdy Winoto, University of Illinois at Urbana Champaign
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Wu, Mo
Global Communication Semiconductors, LLC-
12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry
Mo Wu, Global Communication Semiconductors, LLCWon Sang Lee, RFHIC US Corp.Daniel Hou, Global Communication Semiconductors, LLCKyong Won Lee, RFHIC Corporation
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Y Osipov, Konstantin
Ampleon Netherlands B.V.-
3.3 Novel approach for ED transistors integration in GaN HEMT technology
Konstantin Y Osipov, Ampleon Netherlands B.V.I. Ostermay, Ferdinand-Braun-Institut (FBH)Frank Brunner, Ferdinand-Braun-Institut (FBH)
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Yabuhara, Yoshiki
Sumitomo Electric Industries, Ltd, Itami-
14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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Yagi, Kuniaki
SICOXS Corporation-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Yamada, Atsushi
Fujitsu Limited and Fujitsu Laboratories Ltd.-
5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding
Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Motonobu Sato, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Yamaga, Shigeki
New Japan Radio Co., Ltd-
6.4 How we have continued GaAs RFIC business in Japan; Survival History of New Japan Radio
Shigeki Yamaga, New Japan Radio Co., LtdHiroyuki Yoshinaga, New Japan Radio Co., LtdTakehiko Kameyama, New Japan Radio Co., Ltd
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Yamaguchi, Ryota
University of Fukui-
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Ryota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui
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Yamaki, Fumikazu
Sumitomo Electric Device Innovations, Inc.-
4.5 Mass-Production of High Reliability GaN HEMT for Wireless Communication
Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.Seigo Sano, Sumitomo Electric Device Innovations, Inc.
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Yamakoshi, Shigenobu
Tamura Corporation-
13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Masataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology
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Yamazaki, Taisei
University of Fukui-
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Ryota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui
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Yang, Shuai
Institute of Semiconductors, Chinese Academy of Sciences-
10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire
Shuai Yang, Institute of Semiconductors, Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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Yoshida, Takefumi
SCIOCS-
7.1 Real potential of GaN electric devices coming from GaN on GaN
Yohei Otoki, SCIOCSHajime Fujikura, SCIOCSTakefumi Yoshida, SCIOCSFumimasa Harikiri, SCIOCSTetsuji Fujimoto, SCIOCS
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Yoshida, Takehiro
Sciocs Company Limited-
7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle
Fumimasa Horikiri, Sciocs Company LimitedYoshinobu Narita, Sciocs Company LimitedTakehiro Yoshida, Sciocs Company LimitedChikashi Ito, KLA-Tencor LimitedVarun Gupta, KLA-Tencor LimitedAnoop Somanchi, KLA-Tencor Limited
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Yoshinaga, Hiroyuki
New Japan Radio Co., Ltd-
6.4 How we have continued GaAs RFIC business in Japan; Survival History of New Japan Radio
Shigeki Yamaga, New Japan Radio Co., LtdHiroyuki Yoshinaga, New Japan Radio Co., LtdTakehiko Kameyama, New Japan Radio Co., Ltd
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Yuki, Kouichirou
Yamaguchi University-
14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition
Masayuki Nakamura, SAMCO Inc.Takayuki Kobayashi, SAMCO Inc.Tatsurou Sagawa, SAMCO inc.Shin-ichi MotoyamaKouichirou Yuki, Yamaguchi UniversityRyo Inomoto, Yamaguchi UniversityOsamu Tsuji, Yamaguchi UniversityKazuyuki Tadatomo, Yamaguchi UniversityPeter C Wood, SAMCO Inc.
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Zaidi, Zaffar
University of Sheffield-
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol
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Zeng, Jianping
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China-
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
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Zhang, Lian
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire
Shuai Yang, Institute of Semiconductors, Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing -
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing -
14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingC. Chen, Momentive TechnologiesLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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Zhang, Yun
Institute of Semiconductors, Chinese Academy of Sciences, Beijing-
10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire
Shuai Yang, Institute of Semiconductors, Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing -
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing -
14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingC. Chen, Momentive TechnologiesLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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Zhang, Zhaofu
The Hong Kong University of Science and Technology-
5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric
Jiabei He, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyZhaofu Zhang, The Hong Kong University of Science and TechnologyGaofei Tang, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology -
5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study
Zhaofu Zhang, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyJiabei He, The Hong Kong University of Science and TechnologyQingkai Qian, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology
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