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  • A Armour, Eric

    Veeco Instruments, Inc

    • 8.1 Advances in MOCVD Technology for III-V Photonics

      Eric A Armour, Veeco Instruments, Inc
      Download Paper

  • A Carlson, John

    University of Illinois at Urbana-Champaign

    • 14.1 Epitaxial Bonding and Transfer for Heterogeneous Integration of Electronic-Photonic Circuitry

      John A Carlson, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

  • A Mclain, Michael

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • A. Borek, Mark

    Skyworks Solutions, Inc.

    • 4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing

      Lam T. Luu-Henderson, Skyworks Solutions, Inc.
      Mark A. Borek, Skyworks Solutions, Inc.
      John W. Bonk, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Download Paper

  • A. Middlebrooks, Joseph

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Aigner, Robert

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Aktas, Ozgur

    QROMIS, USA

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

    • 14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates

      Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRL
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Ozgur Aktas, QROMIS, USA
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Alema, Fikadu

    Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

    • 13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics

      Ross Miller, Agnitron Technology
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Download Paper

  • Almeida, Carlos

    Semilab SDI

    • 5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures

      Marshall Wilson, Semilab SDI, Tampa, FL,
      Alexandre Savtchouk, Semilab SDI
      Carlos Almeida, Semilab SDI
      Andrew Findlay, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      Download Paper

  • Atherton, John

    MACOM

    • 11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation

      Georges Pavlidis, Georgia Institute of Technology
      Shamit Som, MACOM
      Jason Barrett, MACOM
      Wayne Struble, MACOM
      John Atherton, MACOM
      Samuel Graham, Georgia Institute of Technology
      Download Paper

  • B Woodard, Elena

    Skyworks Solutions, Inc., Newbury Park, CA

    • 9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications

      Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CA
      Daniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CA
      Stephen Vargo, SPTS Technologies, Inc.
      Miki Takagi, SPTS Technologies, Inc.
      Michael Blair, SPTS Technologies, Inc.
      Download Paper

  • Bajaj, Sanyam

    The Ohio State University, Columbus

    • 14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity

      Shahadat H Sohel, The Ohio State University, Columbus
      Sanyam Bajaj, The Ohio State University, Columbus
      Towhidur Razzak, The Ohio State University, Columbus
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper

  • Barrett, Jason

    MACOM

    • 11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation

      Georges Pavlidis, Georgia Institute of Technology
      Shamit Som, MACOM
      Jason Barrett, MACOM
      Wayne Struble, MACOM
      John Atherton, MACOM
      Samuel Graham, Georgia Institute of Technology
      Download Paper

  • Basceri, Cem

    QROMIS, USA

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • Bergner, Wolfgang

    Infineon Technologies Austria AG

    • 13.1 Performance and Manufacturing Perspectives of SiC T-MOS Devices

      Martin Huber, Infineon Technologies Austria AG
      Dethard Peters, Infineon Technologies AG
      Wolfgang Bergner, Infineon Technologies Austria AG
      Download Paper

  • Beyer, C.

    Siltectra GmbH

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Blair, Michael

    SPTS Technologies, Inc.

    • 9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications

      Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CA
      Daniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CA
      Stephen Vargo, SPTS Technologies, Inc.
      Miki Takagi, SPTS Technologies, Inc.
      Michael Blair, SPTS Technologies, Inc.
      Download Paper

  • Blevins, John

    Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH

    • 13.5 Growth of 50mm Beta-Gallium Oxide (β-Ga2O3) Substrates

      John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
      Download Paper

  • Bondarenko, Volodymyr

    Qorvo

    • 4.4 Plating Defect Detection and Process Control

      Michael G Meeder, Qorvo
      Volodymyr Bondarenko, Qorvo
      Download Paper

  • Boon Lee, Kean

    University of Sheffield

    • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Kean Boon Lee, University of Sheffield
      Zaffar Zaidi, University of Sheffield
      Peter Houston, University of Sheffield, Sheffield
      Martin Kuball, University of Bristol
      Download Paper

  • Botwin, Brad

    U.S. Department of Commerce, Bureau of Industry and Security

    • 6.3 The Status of the U.S. Integrated Circuit Design and Manufacturing Industry: Capabilities and Challenges

      Brad Botwin, U.S. Department of Commerce, Bureau of Industry and Security
      Download Paper

  • Brown, Tom

    Skyworks Solutions, Inc.

    • 9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications

      Sarang Kulkarni, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

    • 9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective

      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Sarang Kulkarni, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

  • Brueckner, Peter

    Fraunhofer IAF

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Brunner, Frank

    Ferdinand-Braun-Institut, Berlin, Germany

    • 3.3 Novel approach for ED transistors integration in GaN HEMT technology

      Konstantin Y Osipov, Ampleon Netherlands B.V.
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Download Paper

  • Bubber, Randhir

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • C Wood, Peter

    SAMCO Inc.

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • C. Fitch, Robert

    Sensors Directorate, Air Force Research Laboratory

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • Carter, James

    MACOM

    • 4.1 SPC Process Revitalization in a High Mix Low Volume Fab

      Jay D Alexander, MACOM
      Eric Finchem, MACOM
      James Carter, MACOM
      Download Paper

    • 8.5 Manufacturing of lasers and photodetectors on 100mm InP in GaAs IC fabrication facility

      Debdas Pal, MACOM
      James Carter, MACOM
      Lisza Elliot, MACOM
      Download Paper

  • Chang, Yu-Wei

    WIN Semiconductors Corp

    • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Benny Ho, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Chen, C.

    Momentive Technologies

    • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

      Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      C. Chen, Momentive Technologies
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

  • Chen, Chen-Yu

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Chen, Chia-Hao

    WIN Semiconductors Corp

    • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Benny Ho, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Cheng, Zhe

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing

    • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

      Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

    • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Download Paper

  • Christou, Aristos

    University of Maryland

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • D Alexander, Jay

    MACOM

    • 4.1 SPC Process Revitalization in a High Mix Low Volume Fab

      Jay D Alexander, MACOM
      Eric Finchem, MACOM
      James Carter, MACOM
      Download Paper

  • D Hodge, Michael

    Akoustis Technologies

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Dark, Charles

    Qorvo

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Diep, Buu

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Du, Jhih-Han

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Dumont, Fabien

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • E Butler, James

    Euclid TechLabs

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • E. Luna, Lunet

    NRC Postdoctoral Fellow Residing at NRL

    • 14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates

      Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRL
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Ozgur Aktas, QROMIS, USA
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Elliot, Lisza

    MACOM

    • 8.5 Manufacturing of lasers and photodetectors on 100mm InP in GaAs IC fabrication facility

      Debdas Pal, MACOM
      James Carter, MACOM
      Lisza Elliot, MACOM
      Download Paper

  • Fallon, Ken

    Akoustis

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Fan, Wei

    Momentive Performance Materials Inc

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Fattinger, Gernot

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Feezell, Daniel

    Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Feygelson, Tatyana

    Naval Research Laboratory

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

  • Finchem, Eric

    MACOM

    • 4.1 SPC Process Revitalization in a High Mix Low Volume Fab

      Jay D Alexander, MACOM
      Eric Finchem, MACOM
      James Carter, MACOM
      Download Paper

  • Findlay, Andrew

    Semilab SDI

    • 5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures

      Marshall Wilson, Semilab SDI, Tampa, FL,
      Alexandre Savtchouk, Semilab SDI
      Carlos Almeida, Semilab SDI
      Andrew Findlay, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      Download Paper

  • Formicone, Gabriele

    Integra Technologies, Inc.

    • 3.1 A 15 W/mm GaN Technology for C-band Pulsed Radars with 45% PAE

      Gabriele Formicone, Integra Technologies, Inc.
      Download Paper

  • Frey, D

    Cobham Advanced Electronic Solutions

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • Fuentes, Erika

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Fujikura, Hajime

    SCIOCS

    • 7.1 Real potential of GaN electric devices coming from GaN on GaN

      Yohei Otoki, SCIOCS
      Hajime Fujikura, SCIOCS
      Takefumi Yoshida, SCIOCS
      Fumimasa Harikiri, SCIOCS
      Tetsuji Fujimoto, SCIOCS
      Download Paper

  • Fujimoto, Tetsuji

    SCIOCS

    • 7.1 Real potential of GaN electric devices coming from GaN on GaN

      Yohei Otoki, SCIOCS
      Hajime Fujikura, SCIOCS
      Takefumi Yoshida, SCIOCS
      Fumimasa Harikiri, SCIOCS
      Tetsuji Fujimoto, SCIOCS
      Download Paper

  • G Meeder, Michael

    Qorvo

    • 4.4 Plating Defect Detection and Process Control

      Michael G Meeder, Qorvo
      Volodymyr Bondarenko, Qorvo
      Download Paper

  • Garcia, Sergio

    Skyworks Solutions

    • 12.1 Global Cycle Time Reduction Methodologies

      Juan Velasquez, Skyworks Solutions
      Sergio Garcia, Skyworks Solutions
      Heather Knoedler, Skyworks Solutions
      Download Paper

  • Gassmann, J

    Cobham Advanced Electronic Solutions

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • Gibb, Shawn

    Akoustis

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Godejohann, Birte-Julia

    Fraunhofer IAF

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Goto, Ken

    Tamura Corporation

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Graham, Samuel

    Georgia Institute of Technology

    • 11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation

      Georges Pavlidis, Georgia Institute of Technology
      Shamit Som, MACOM
      Jason Barrett, MACOM
      Wayne Struble, MACOM
      John Atherton, MACOM
      Samuel Graham, Georgia Institute of Technology
      Download Paper

  • Guiot, Eric

    SOITEC

    • 7.5 Innovative GaN based engineered substrates for power applications

      Eric Guiot, SOITEC
      Download Paper

  • Gupta, Varun

    KLA-Tencor Limited

    • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Chikashi Ito, KLA-Tencor Limited
      Varun Gupta, KLA-Tencor Limited
      Anoop Somanchi, KLA-Tencor Limited
      Download Paper

  • H Flemming, Jeb

    3D Glass Solutions, Inc.

    • 2.3 Photosensitive Glass-Ceramics for Heterogeneous Integration

      Jeb H Flemming, 3D Glass Solutions, Inc.
      Download Paper

  • H Jessen, Gregg

    Sensors Directorate, Air Force Research Laboratory

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • H Leach, Jacob

    Kyma Technologies

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • H Sohel, Shahadat

    The Ohio State University, Columbus

    • 14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity

      Shahadat H Sohel, The Ohio State University, Columbus
      Sanyam Bajaj, The Ohio State University, Columbus
      Towhidur Razzak, The Ohio State University, Columbus
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper

  • Hagi, Yoshiaki

    Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Hall, Craig

    Qorvo

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Hamilton, Pat

    Qorvo Inc.

    • 4.3 Systematic Data Mining Approaches for Yield Improvement

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper

  • Harikiri, Fumimasa

    SCIOCS

    • 7.1 Real potential of GaN electric devices coming from GaN on GaN

      Yohei Otoki, SCIOCS
      Hajime Fujikura, SCIOCS
      Takefumi Yoshida, SCIOCS
      Fumimasa Harikiri, SCIOCS
      Tetsuji Fujimoto, SCIOCS
      Download Paper

  • Hatta, Naoki

    SICOXS Corporation

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • He, Jiabei

    The Hong Kong University of Science and Technology

    • 5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

      Jiabei He, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

    • 5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Jiabei He, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

  • Herrault, Florian

    HRL Laboratories

    • 2.4 Heterogeneous Integration Technologies for Next-Generation RF and mm-Wave Subsystems

      Florian Herrault, HRL Laboratories
      Download Paper

  • Higashiwaki, Masataka

    National Institute of Information and Communications Technology

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Ho, Benny

    WIN Semiconductors Corp

    • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Benny Ho, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Hobart, Karl D.

    U.S. Naval Research Laboratory

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

    • 14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates

      Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRL
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Ozgur Aktas, QROMIS, USA
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Hoi Wong, Man

    National Institute of Information and Communications Technology

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Horikawa, Satoshi

    Sumitomo Electric Industries, Ltd, Itami

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Horikiri, Fumimasa

    Sciocs Company Limited

    • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Chikashi Ito, KLA-Tencor Limited
      Varun Gupta, KLA-Tencor Limited
      Anoop Somanchi, KLA-Tencor Limited
      Download Paper

  • Hou, Daniel

    Global Communication Semiconductors, LLC

    • 12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry

      Mo Wu, Global Communication Semiconductors, LLC
      Won Sang Lee, RFHIC US Corp.
      Daniel Hou, Global Communication Semiconductors, LLC
      Kyong Won Lee, RFHIC Corporation
      Download Paper

  • Houlden, Rohan

    Akoustis

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Houston, Peter

    University of Sheffield, Sheffield

    • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Kean Boon Lee, University of Sheffield
      Zaffar Zaidi, University of Sheffield
      Peter Houston, University of Sheffield, Sheffield
      Martin Kuball, University of Bristol
      Download Paper

  • Hsiao, Fu-Chen

    University of Illinois at Urbana-Champaign

    • 8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers

      Patrick Su, University of Illinois at Urbana-Champaign
      Thomas O’brien Jr.
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

  • hu,

    • 14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer

      hu
      Download Paper

  • Hua, Mengyuan

    The Hong Kong University of Science and Technology

    • 5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

      Jiabei He, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

    • 5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Jiabei He, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

  • Huang, Chuck

    WIN Semiconductors Corp.

    • 12.2 The Package Trend for Compound Semiconductor

      Chuck Huang, WIN Semiconductors Corp.
      Download Paper

  • Huang, Clement

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Huang, Shih-Hui

    WIN Semiconductors Corp

    • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Benny Ho, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Huang, Xiaokang

    Qorvo

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Huber, Martin

    Infineon Technologies Austria AG

    • 13.1 Performance and Manufacturing Perspectives of SiC T-MOS Devices

      Martin Huber, Infineon Technologies Austria AG
      Dethard Peters, Infineon Technologies AG
      Wolfgang Bergner, Infineon Technologies Austria AG
      Download Paper

  • I Shahin, David

    University of Maryland

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • Inomoto, Ryo

    Yamaguchi University

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Isom, Harold

    Qorvo

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Ito, Chikashi

    KLA-Tencor Limited

    • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Chikashi Ito, KLA-Tencor Limited
      Varun Gupta, KLA-Tencor Limited
      Anoop Somanchi, KLA-Tencor Limited
      Download Paper

  • J Meyer, David

    U.S. Naval Research Laboratory, Washington, DC

    • 14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity

      Shahadat H Sohel, The Ohio State University, Columbus
      Sanyam Bajaj, The Ohio State University, Columbus
      Towhidur Razzak, The Ohio State University, Columbus
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper

  • J Sires, Jeremiah

    Skyworks Solutions, Inc.

    • 14.3 Reactive Sputtering: TaN Process Characterization and Post PM Qualification Improvements

      Jeremiah J Sires, Skyworks Solutions, Inc.
      Download Paper

  • J. Chen, Kevin

    The Hong Kong University of Science and Technology

    • 5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

      Jiabei He, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

    • 5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Jiabei He, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

  • J. Green, Andrew

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • J. Kub, Fritz

    U.S. Naval Research Laboratory

    • 14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates

      Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRL
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Ozgur Aktas, QROMIS, USA
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • J. Roesch, William

    TriQuint Semiconductor, Inc.

    • 11.1 The Reliability of Compound Semiconductors, Proving It’s Good Enough

      William J. Roesch, TriQuint Semiconductor, Inc.
      Download Paper

  • J. Tadjer, Marko

    U.S. Naval Research Laboratory

    • 14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates

      Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRL
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Ozgur Aktas, QROMIS, USA
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Janani, Mehran

    Skyworks Solutions, Inc.

    • 4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing

      Lam T. Luu-Henderson, Skyworks Solutions, Inc.
      Mark A. Borek, Skyworks Solutions, Inc.
      John W. Bonk, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Download Paper

  • Jhan, Richard

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Joshi, Somit

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • Joshin, Kazukiyo

    Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • K Berkoh, Daniel

    Skyworks Solutions, Inc., Newbury Park, CA

    • 9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications

      Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CA
      Daniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CA
      Stephen Vargo, SPTS Technologies, Inc.
      Miki Takagi, SPTS Technologies, Inc.
      Michael Blair, SPTS Technologies, Inc.
      Download Paper

  • K Kovi, Kiran

    Euclid TechLabs

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • K. Gillespie, James

    Sensors Directorate, Air Force Research Laboratory

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • K. Tiku, Shiban

    Skyworks Solutions, Inc.

    • 12.4 New Product Introduction and Design for Manufacturability in GaAs IC Industry

      Shiban K. Tiku, Skyworks Solutions, Inc.
      Download Paper

  • Kameyama, Takehiko

    New Japan Radio Co., Ltd

    • 6.4 How we have continued GaAs RFIC business in Japan; Survival History of New Japan Radio

      Shigeki Yamaga, New Japan Radio Co., Ltd
      Hiroyuki Yoshinaga, New Japan Radio Co., Ltd
      Takehiko Kameyama, New Japan Radio Co., Ltd
      Download Paper

  • Kaneko, Shuichi

    Sumiden Semiconductor Materials Co., Ltd, Kobe

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Kao, Yung-Chung

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Karboyan, Serge

    Nexperia. Manchester, UK

    • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Kean Boon Lee, University of Sheffield
      Zaffar Zaidi, University of Sheffield
      Peter Houston, University of Sheffield, Sheffield
      Martin Kuball, University of Bristol
      Download Paper

  • Khouri, Kamal

    NXP Semiconductors

    • 1.2 Automotive Industry Trends and Their Impact on the Future Vehicle

      Kamal Khouri, NXP Semiconductors
      Download Paper

  • Kim, Daeho

    Akoustis

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Kirste, Lutz

    Fraunhofer IAF

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Knoedler, Heather

    Skyworks Solutions

    • 12.1 Global Cycle Time Reduction Methodologies

      Juan Velasquez, Skyworks Solutions
      Sergio Garcia, Skyworks Solutions
      Heather Knoedler, Skyworks Solutions
      Download Paper

  • Kobayashi, Takayuki

    SAMCO Inc.

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Koehler, Andrew

    Naval Research Laboratory

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

    • 14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates

      Lunet E. Luna, NRC Postdoctoral Fellow Residing at NRL
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Ozgur Aktas, QROMIS, USA
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Konishi, Keita

    Tokyo University of Agriculture and Technology

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Kotani, Junji

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Kozak, B.

    Momentive Technologies

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Kraft, Robert

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Kub, Fritz

    Naval Research Laboratory

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

  • Kuball, Martin

    University of Bristol

    • 2.2 Interfacial strength and fracture toughness in bonded semiconductor materials

      Dong Liu, University of Oxford, University of Bristol
      Jianbo Liang, Osaka City University, University of Bristol
      Naoteru Shigekawa, Osaka City University
      Martin Kuball, University of Bristol
      Download Paper

    • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Kean Boon Lee, University of Sheffield
      Zaffar Zaidi, University of Sheffield
      Peter Houston, University of Sheffield, Sheffield
      Martin Kuball, University of Bristol
      Download Paper

  • Kulkarni, Sarang

    Skyworks Solutions, Inc.

    • 9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications

      Sarang Kulkarni, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

    • 9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective

      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Sarang Kulkarni, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

  • Kumagai, Yoshinao

    Tokyo University of Agriculture and Technology

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Kuo, Jenn-Ming

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Kuramata, Akito

    Novel Crystal Technology, Inc

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Kuzuhara, Masaaki

    University of Fukui

    • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

      Ryota Yamaguchi, University of Fukui
      Taisei Yamazaki, University of Fukui
      Takashi Nishitani, University of Fukui
      Joel T. Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper

  • Lagowski, Jacek

    Semilab SDI, Tampa, FL,

    • 5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures

      Marshall Wilson, Semilab SDI, Tampa, FL,
      Alexandre Savtchouk, Semilab SDI
      Carlos Almeida, Semilab SDI
      Andrew Findlay, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      Download Paper

  • Lai, Billy

    Hong Kong University of Science and Technology

    • 14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods

      Billy Lai, Hong Kong University of Science and Technology
      Qiang Li, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper

  • Lee, Soo-Min

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • Leone, Stefano

    Fraunhofer IAF

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Leong, Shan-Fong

    National Taiwan University

    • 8.4 Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK

      Chun-Yen Peng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Shan-Fong Leong, National Taiwan University
      Download Paper

  • Li, Juan

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Li, Qiang

    Hong Kong University of Science and Technology

    • 14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods

      Billy Lai, Hong Kong University of Science and Technology
      Qiang Li, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper

  • Li, Wei

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Liang, Jianbo

    Osaka City University, University of Bristol

    • 2.2 Interfacial strength and fracture toughness in bonded semiconductor materials

      Dong Liu, University of Oxford, University of Bristol
      Jianbo Liang, Osaka City University, University of Bristol
      Naoteru Shigekawa, Osaka City University
      Martin Kuball, University of Bristol
      Download Paper

  • Lien, Yi-Wei

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Lin, Chia-Hung

    National Institute of Information and Communications Technology

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Lin, Wayne

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Liu, Dong

    University of Oxford, University of Bristol

    • 2.2 Interfacial strength and fracture toughness in bonded semiconductor materials

      Dong Liu, University of Oxford, University of Bristol
      Jianbo Liang, Osaka City University, University of Bristol
      Naoteru Shigekawa, Osaka City University
      Martin Kuball, University of Bristol
      Download Paper

  • Lu, Hongxi

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing

    • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Download Paper

  • Lu, Yizhou

    University of Maryland

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • Lv, Hongrui

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing

    • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Download Paper

  • M Dallesasse, John

    University of Illinois at Urbana-Champaign

    • 8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers

      Patrick Su, University of Illinois at Urbana-Champaign
      Thomas O’brien Jr.
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

    • 14.1 Epitaxial Bonding and Transfer for Heterogeneous Integration of Electronic-Photonic Circuitry

      John A Carlson, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

  • M. Gee, Caroline

    The Aerospace Corporation

    • 11.2 Draft Guidelines for Space Qualification of GaN HEMT Technology

      John Scarpulla, The Aerospace Corporation
      Caroline M. Gee, The Aerospace Corporation
      Download Paper

  • M. Hill, Shannon

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Makiyama, Kozo

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Manz, Christian

    Fraunhofer IAF

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • May Lau, Kei

    Hong Kong University of Science and Technology

    • 14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods

      Billy Lai, Hong Kong University of Science and Technology
      Qiang Li, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper

  • McClure, Mike

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Melnik, Peter

    Skyworks Solutions, Inc., Woburn, MA, USA

    • 12.3 Operational Yield Improvements Through Application of Lean, 5S, Employee Engagement, Root Cause Investigations and Culture Change

      Peter Melnik, Skyworks Solutions, Inc., Woburn, MA, USA
      Joseph Santa, Skyworks Solutions, Inc., Woburn, MA, USA
      Daniel Sullivan, Skyworks Solutions, Inc., Woburn, MA, USA
      Download Paper

  • Middleton*, Jeremy

    TriQuint Semiconductor, Inc.

    • 4.3 Systematic Data Mining Approaches for Yield Improvement

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper

  • Migliaccio, James

    Qorvo, Inc.

    • 11.3 Aspects of High Volume Test for Semiconductor Devices

      James Migliaccio, Qorvo, Inc.
      Download Paper

  • Miller, Ross

    Agnitron Technology

    • 13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics

      Ross Miller, Agnitron Technology
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Download Paper

  • Minoura, Yuichi

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Mishra, Umesh

    Transphorm

    • 1.3 Looking for reliability and high performance in RF and power conversion applications? Use GaN.

      Umesh Mishra, Transphorm
      Download Paper

  • Monavarian, Morteza

    Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Morishige, Kouji

    Sumitomo Electric Industries, Ltd, Itami

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Morishita, Masanori

    Sumiden Semiconductor Materials Co., Ltd, Kobe

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Moriwake, Tatsuya

    Sumiden Semiconductor Materials Co., Ltd, Kobe

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Mortensen, Donna

    Qorvo

    • 10.3 Copy, Scale, Develop, and Match – A Methodology for 200mm Bulk Acoustic Wave Filter Pilot Production Line Start up at Qorvo

      Xiaokang Huang, Qorvo
      Charles Dark, Qorvo
      Mike McClure
      Buu Diep, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Donna Mortensen, Qorvo
      Download Paper

  • Motoyama, Shin-ichi

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Murakami, Hisashi

    Tokyo University of Agriculture and Technology

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Nakamura, Masayuki

    SAMCO Inc.

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Nakamura, Norikazu

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Narita, Yoshinobu

    Sciocs Company Limited

    • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Chikashi Ito, KLA-Tencor Limited
      Varun Gupta, KLA-Tencor Limited
      Anoop Somanchi, KLA-Tencor Limited
      Download Paper

  • Natarajan, Sudarshan

    Momentive Performance Materials

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Nguyen, Bang

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Ni, Ruxue

    Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences

    • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

      Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      C. Chen, Momentive Technologies
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

  • Nishitani, Takashi

    University of Fukui

    • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

      Ryota Yamaguchi, University of Fukui
      Taisei Yamazaki, University of Fukui
      Takashi Nishitani, University of Fukui
      Joel T. Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper

  • O'brien Jr., Thomas

    • 8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers

      Patrick Su, University of Illinois at Urbana-Champaign
      Thomas O’brien Jr.
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

  • Odnoblyudov, Vladimir

    QROMIS, USA

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • Ohki, Toshihiro

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Okamoto, Naoya

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Osinsky, Andrei

    Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

    • 13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics

      Ross Miller, Agnitron Technology
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Download Paper

  • Ostermay, Ina

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)

    • 3.3 Novel approach for ED transistors integration in GaN HEMT technology

      Konstantin Y Osipov, Ampleon Netherlands B.V.
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Download Paper

  • Ota, Hirokazu

    Sumiden Semiconductor Materials Co., Ltd, Kobe

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Otoki, Yohei

    SCIOCS

    • 7.1 Real potential of GaN electric devices coming from GaN on GaN

      Yohei Otoki, SCIOCS
      Hajime Fujikura, SCIOCS
      Takefumi Yoshida, SCIOCS
      Fumimasa Harikiri, SCIOCS
      Tetsuji Fujimoto, SCIOCS
      Download Paper

  • Ozaki, Shiro

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Pal, Debdas

    MACOM

    • 8.5 Manufacturing of lasers and photodetectors on 100mm InP in GaAs IC fabrication facility

      Debdas Pal, MACOM
      James Carter, MACOM
      Lisza Elliot, MACOM
      Download Paper

  • Pan, Ming

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • Paranjpe, Ajit

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • Pate, Bradford

    Naval Research Laboratory

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

  • Patel, Pinal

    Akoustis Technologies

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Pavlidis, Georges

    Georgia Institute of Technology

    • 11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation

      Georges Pavlidis, Georgia Institute of Technology
      Shamit Som, MACOM
      Jason Barrett, MACOM
      Wayne Struble, MACOM
      John Atherton, MACOM
      Samuel Graham, Georgia Institute of Technology
      Download Paper

  • Peng, Chun-Yen

    National Taiwan University

    • 8.4 Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK

      Chun-Yen Peng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Shan-Fong Leong, National Taiwan University
      Download Paper

  • Peng, Yu-Ting

    University of Illinois at Urbana Champaign

    • 14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links

      Yu-Ting Peng, University of Illinois at Urbana Champaign
      Dufei Wu, University of Illinois at Urbana Champaign
      Ardy Winoto, University of Illinois at Urbana Champaign
      Download Paper

  • Peters, Dethard

    Infineon Technologies AG

    • 13.1 Performance and Manufacturing Perspectives of SiC T-MOS Devices

      Martin Huber, Infineon Technologies Austria AG
      Dethard Peters, Infineon Technologies AG
      Wolfgang Bergner, Infineon Technologies Austria AG
      Download Paper

  • Ponomarev, Ilya

    Euclid TechLabs

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • Potdar, Vishwavasu

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Qian, Qingkai

    The Hong Kong University of Science and Technology

    • 5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Jiabei He, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

  • Qu, Hao

    Momentive Performance Materials

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Quay, Ruediger

    Fraunhofer IAF

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Quayle, Paul

    Kyma Technologies

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • R Evans, Keith

    Kyma Technologies

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • R. Pinsukanjana, Paul

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Raad, Peter

    TMX Scientific and Southern Methodist University

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

  • Rajan, Siddharth

    The Ohio State University, Columbus

    • 14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity

      Shahadat H Sohel, The Ohio State University, Columbus
      Sanyam Bajaj, The Ohio State University, Columbus
      Towhidur Razzak, The Ohio State University, Columbus
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper

  • Razzak, Towhidur

    The Ohio State University, Columbus

    • 14.13 Design of Graded AlGaN Channel Transistors for Improved Large-Signal Linearity

      Shahadat H Sohel, The Ohio State University, Columbus
      Sanyam Bajaj, The Ohio State University, Columbus
      Towhidur Razzak, The Ohio State University, Columbus
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper

  • Richter, Jan

    Siltectra GmbH

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • Rishinaramangalam, Ashwin

    Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Rollin, Jean-Marc

    Nuvotronics Inc.

    • 2.1 Additive manufacturing solutions to mm-wave heterogenous circuits

      Jean-Marc Rollin, Nuvotronics Inc.
      Download Paper

  • Rothemund, Ralph

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Russel, Thomas

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Sagawa, Tatsurou

    SAMCO inc.

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Samukawa, Seiji

    Tohoku University

    • 9.5 Neutral Beam Technology for Damage-free Etching Processes

      Seiji Samukawa, Tohoku University
      Download Paper

  • Sang Lee, Won

    RFHIC US Corp.

    • 12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry

      Mo Wu, Global Communication Semiconductors, LLC
      Won Sang Lee, RFHIC US Corp.
      Daniel Hou, Global Communication Semiconductors, LLC
      Kyong Won Lee, RFHIC Corporation
      Download Paper

  • Sano, Seigo

    Sumitomo Electric Device Innovations, Inc.

    • 4.5 Mass-Production of High Reliability GaN HEMT for Wireless Communication

      Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.
      Seigo Sano, Sumitomo Electric Device Innovations, Inc.
      Download Paper

  • Santa, Joseph

    Skyworks Solutions, Inc., Woburn, MA, USA

    • 12.3 Operational Yield Improvements Through Application of Lean, 5S, Employee Engagement, Root Cause Investigations and Culture Change

      Peter Melnik, Skyworks Solutions, Inc., Woburn, MA, USA
      Joseph Santa, Skyworks Solutions, Inc., Woburn, MA, USA
      Daniel Sullivan, Skyworks Solutions, Inc., Woburn, MA, USA
      Download Paper

  • Sasaki, Kohei

    Novel Crystal Technology, Inc

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Sato, Motonobu

    Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper

  • Savtchouk, Alexandre

    Semilab SDI

    • 5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures

      Marshall Wilson, Semilab SDI, Tampa, FL,
      Alexandre Savtchouk, Semilab SDI
      Carlos Almeida, Semilab SDI
      Andrew Findlay, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      Download Paper

  • Scarpulla, John

    The Aerospace Corporation

    • 11.2 Draft Guidelines for Space Qualification of GaN HEMT Technology

      John Scarpulla, The Aerospace Corporation
      Caroline M. Gee, The Aerospace Corporation
      Download Paper

  • Shaffer, Gregory

    Momentive Performance Materials

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Shao Chang, Cheng

    Win Semiconductors Corp.

    • 3.5 Advanced BiHEMT Technology with Quarter-um Enhancement Mode pHEMT for sub-6GHz HPUE PA Application

      Cheng Shao Chang, Win Semiconductors Corp.
      Download Paper

  • Shealy, Jeffrey

    Akoustis Technologies

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Shen, Ya

    Akoustis

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Shigekawa, Naoteru

    Osaka City University

    • 2.2 Interfacial strength and fracture toughness in bonded semiconductor materials

      Dong Liu, University of Oxford, University of Bristol
      Jianbo Liang, Osaka City University, University of Bristol
      Naoteru Shigekawa, Osaka City University
      Martin Kuball, University of Bristol
      Download Paper

  • Singh, Manikant

    University of Bristol

    • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Kean Boon Lee, University of Sheffield
      Zaffar Zaidi, University of Sheffield
      Peter Houston, University of Sheffield, Sheffield
      Martin Kuball, University of Bristol
      Download Paper

  • Singh, Manjeet

    Skyworks Solutions, Inc.

    • 9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications

      Sarang Kulkarni, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

    • 9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective

      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Sarang Kulkarni, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

  • Sinha, Saurabh

    Arm Research

    • 6.1 III-V for Logic Applications: A Design Perspective

      Saurabh Sinha, Arm Research
      Download Paper

  • Som, Shamit

    MACOM

    • 11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation

      Georges Pavlidis, Georgia Institute of Technology
      Shamit Som, MACOM
      Jason Barrett, MACOM
      Wayne Struble, MACOM
      John Atherton, MACOM
      Samuel Graham, Georgia Institute of Technology
      Download Paper

  • Somanchi, Anoop

    KLA-Tencor Limited

    • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Chikashi Ito, KLA-Tencor Limited
      Varun Gupta, KLA-Tencor Limited
      Anoop Somanchi, KLA-Tencor Limited
      Download Paper

  • Splawn, Heather

    Kyma Technologies

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • Stokes, Paul

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • Struble, Wayne

    MACOM

    • 11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation

      Georges Pavlidis, Georgia Institute of Technology
      Shamit Som, MACOM
      Jason Barrett, MACOM
      Wayne Struble, MACOM
      John Atherton, MACOM
      Samuel Graham, Georgia Institute of Technology
      Download Paper

  • Su, Jie

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • Su, Patrick

    University of Illinois at Urbana-Champaign

    • 8.3 Controlling Impurity-Induced Disordering Via Mask Strain for High-Performance Vertical-Cavity Surface-Emitting Lasers

      Patrick Su, University of Illinois at Urbana-Champaign
      Thomas O’brien Jr.
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

    • 14.1 Epitaxial Bonding and Transfer for Heterogeneous Integration of Electronic-Photonic Circuitry

      John A Carlson, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
      Download Paper

  • Suda, Jun

    Nagoya University

    • 13.2 Comparison between GaN and SiC from the Viewpoint of Vertical Power Devices

      Jun Suda, Nagoya University
      Download Paper

  • Sullivan, Daniel

    Skyworks Solutions, Inc., Woburn, MA, USA

    • 12.3 Operational Yield Improvements Through Application of Lean, 5S, Employee Engagement, Root Cause Investigations and Culture Change

      Peter Melnik, Skyworks Solutions, Inc., Woburn, MA, USA
      Joseph Santa, Skyworks Solutions, Inc., Woburn, MA, USA
      Daniel Sullivan, Skyworks Solutions, Inc., Woburn, MA, USA
      Download Paper

  • Swoboda, M.

    Siltectra GmbH

    • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

      Stefano Leone, Fraunhofer IAF
      Birte-Julia Godejohann, Fraunhofer IAF
      Peter Brueckner, Fraunhofer IAF
      Lutz Kirste, Fraunhofer IAF
      Christian Manz, Fraunhofer IAF
      M. Swoboda, Siltectra GmbH
      C. Beyer, Siltectra GmbH
      Jan Richter, Siltectra GmbH
      Ruediger Quay, Fraunhofer IAF
      Download Paper

  • T. Asubar, Joel

    University of Fukui

    • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

      Ryota Yamaguchi, University of Fukui
      Taisei Yamazaki, University of Fukui
      Takashi Nishitani, University of Fukui
      Joel T. Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper

  • T. Luu-Henderson, Lam

    Skyworks Solutions, Inc.

    • 4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing

      Lam T. Luu-Henderson, Skyworks Solutions, Inc.
      Mark A. Borek, Skyworks Solutions, Inc.
      John W. Bonk, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Download Paper

  • Tadatomo, Kazuyuki

    Yamaguchi University

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Tadjer, Marko

    U.S. Naval Research Laboratory

    • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

      Marko Tadjer, U.S. Naval Research Laboratory
      Peter Raad, TMX Scientific and Southern Methodist University
      Tatyana Feygelson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper

  • Takagi, Miki

    SPTS Technologies, Inc.

    • 9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications

      Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CA
      Daniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CA
      Stephen Vargo, SPTS Technologies, Inc.
      Miki Takagi, SPTS Technologies, Inc.
      Michael Blair, SPTS Technologies, Inc.
      Download Paper

  • Takatani, Shinichiro

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Takayama, Hidetoshi

    Sumiden Semiconductor Materials Co., Ltd, Kobe

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
      Download Paper

  • Tang, Gaofei

    The Hong Kong University of Science and Technology

    • 5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

      Jiabei He, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper

  • Thapa, Aayush

    University of Maryland

    • 14.11 Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

      David I Shahin, University of Maryland
      Kiran K Kovi, Euclid TechLabs
      Aayush Thapa, University of Maryland
      Yizhou Lu, University of Maryland
      Ilya Ponomarev, Euclid TechLabs
      James E Butler, Euclid TechLabs
      Aristos Christou, University of Maryland
      Download Paper

  • Tiku, Shiban

    Skyworks Solutions, Inc.

    • 9.2 Impact of Loading Effect on Retrograde Profile of CAMP Negative Photoresist in Metal Lift-off Applications

      Sarang Kulkarni, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

    • 9.3 Evolution and Challenges of a TaN Resistor Lift-off Process from a Lithography Perspective

      Tom Brown, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Sarang Kulkarni, Skyworks Solutions, Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Download Paper

  • Tokuda, Hirokuni

    University of Fukui

    • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

      Ryota Yamaguchi, University of Fukui
      Taisei Yamazaki, University of Fukui
      Takashi Nishitani, University of Fukui
      Joel T. Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper

  • Tomek, Creighton

    Momentive Performance Materials

    • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      B. Kozak, Momentive Technologies
      Download Paper

  • Tseng, Andy

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Tsuji, Osamu

    Yamaguchi University

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Tucker, Eric

    Veeco Instruments

    • 7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology

      Ming Pan, Veeco Instruments
      Soo-Min Lee, Veeco Instruments
      Jie Su, Veeco Instruments
      Eric Tucker, Veeco Instruments
      Randhir Bubber, Veeco Instruments
      Somit Joshi, Veeco Instruments
      Ajit Paranjpe, Veeco Instruments
      Download Paper

  • Udwary, Kevin

    Kyma Technologies

    • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

      Jacob H Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      Paul Quayle, Kyma Technologies
      Vladimir Odnoblyudov, QROMIS, USA
      Cem Basceri, QROMIS, USA
      Ozgur Aktas, QROMIS, USA
      Heather Splawn, Kyma Technologies
      Keith R Evans, Kyma Technologies
      Download Paper

  • Ueno, Takahiro

    Mitsubishi Electric Corporation

    • 9.1 0.20um gate length formation technology by using i-line stepper exposure and chemical shrink process

      Takahiro Ueno, Mitsubishi Electric Corporation
      Download Paper

  • Vargo, Stephen

    SPTS Technologies, Inc.

    • 9.4 Extending MTBC to High Productive Performance Levels in ICP SiN Etching for Advanced RF Applications

      Elena B Woodard, Skyworks Solutions, Inc., Newbury Park, CA
      Daniel K Berkoh, Skyworks Solutions, Inc., Newbury Park, CA
      Stephen Vargo, SPTS Technologies, Inc.
      Miki Takagi, SPTS Technologies, Inc.
      Michael Blair, SPTS Technologies, Inc.
      Download Paper

  • Velasquez, Juan

    Skyworks Solutions

    • 12.1 Global Cycle Time Reduction Methodologies

      Juan Velasquez, Skyworks Solutions
      Sergio Garcia, Skyworks Solutions
      Heather Knoedler, Skyworks Solutions
      Download Paper

  • Vetury, Ramakrishna

    Akoustis

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Volatier, Alexandre

    Qorvo

    • 10.2 Recent Advances in Bulk Acoustic Wave Filter Device Performance and Miniaturization

      Paul Stokes, Qorvo
      Gernot Fattinger, Qorvo
      Fabien Dumont, Qorvo
      Ralph Rothemund, Qorvo
      Alexandre Volatier, Qorvo
      Robert Aigner, Qorvo
      Erika Fuentes, Qorvo
      Thomas Russel, Qorvo
      Vishwavasu Potdar, Qorvo
      Bang Nguyen, Qorvo
      Buu Diep, Qorvo
      Robert Kraft, Qorvo
      Download Paper

  • W. Bonk, John

    Skyworks Solutions, Inc.

    • 4.2 Mechanism and Resolution of Implant Induced ESD Damage in GaAs IC Processing

      Lam T. Luu-Henderson, Skyworks Solutions, Inc.
      Mark A. Borek, Skyworks Solutions, Inc.
      John W. Bonk, Skyworks Solutions, Inc.
      Mehran Janani, Skyworks Solutions, Inc.
      Download Paper

  • W. Peterson, Bror

    Qorvo Inc.

    • 6.2 The Case for All Digital Beamforming

      Bror W. Peterson, Qorvo Inc.
      Download Paper

  • W. Vargason, Kevin

    Intelligent Epitaxy Technology, Inc.

    • 8.2 Highly Uniform VCSELs Grown by Multi-wafer Production MBE

      Juan Li, Intelligent Epitaxy Technology, Inc.
      Shannon M. Hill, Intelligent Epitaxy Technology, Inc.
      Joseph A. Middlebrooks, Intelligent Epitaxy Technology, Inc.
      Chen-Yu Chen, Intelligent Epitaxy Technology, Inc.
      Wei Li, Intelligent Epitaxy Technology, Inc.
      Jenn-Ming Kuo, Intelligent Epitaxy Technology, Inc.
      Kevin W. Vargason, Intelligent Epitaxy Technology, Inc.
      Yung-Chung Kao, Intelligent Epitaxy Technology, Inc.
      Paul R. Pinsukanjana, Intelligent Epitaxy Technology, Inc.
      Download Paper

  • Waco, Robert

    Qorvo Inc.

    • 4.3 Systematic Data Mining Approaches for Yield Improvement

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper

  • Walker, Mark

    Cobham Advanced Electronic Solutions

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • Walker Jr., Dennis E.

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

    • 3.2 Impact of Threshold Voltage Variation on RF Performance of 140 nm GaN MMICs

      Robert C. Fitch, Sensors Directorate, Air Force Research Laboratory
      James K. Gillespie, Sensors Directorate, Air Force Research Laboratory
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      D Frey, Cobham Advanced Electronic Solutions
      J Gassmann, Cobham Advanced Electronic Solutions
      Mark Walker, Cobham Advanced Electronic Solutions
      Gregg H Jessen, Sensors Directorate, Air Force Research Laboratory
      Download Paper

  • Wang, Fraser

    WIN Semiconductors Corp

    • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Benny Ho, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Wang, Junxi

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing

    • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

      Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

    • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

      Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      C. Chen, Momentive Technologies
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

  • Wang, Wei-Chou

    WIN Semiconductors Corp

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Wang, Yiping

    Qorvo Inc.

    • 4.3 Systematic Data Mining Approaches for Yield Improvement

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Download Paper

  • Weimar, Andreas

    Osram

    • 1.1 Innovated volume production for III-V Compound Semiconductor LED and Laserchips at OSRAM Opto Semiconductors

      Andreas Weimar, Osram
      Download Paper

  • Wilson, Marshall

    Semilab SDI, Tampa, FL,

    • 5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures

      Marshall Wilson, Semilab SDI, Tampa, FL,
      Alexandre Savtchouk, Semilab SDI
      Carlos Almeida, Semilab SDI
      Andrew Findlay, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      Download Paper

  • Winoto, Ardy

    University of Illinois at Urbana Champaign

    • 14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links

      Yu-Ting Peng, University of Illinois at Urbana Champaign
      Dufei Wu, University of Illinois at Urbana Champaign
      Ardy Winoto, University of Illinois at Urbana Champaign
      Download Paper

  • Winters, Mary

    Akoustis Technologies

    • 10.1 Low Loss, Wideband 5.2GHz BAW RF Filters Using Single Crystal AlN Resonators on Silicon Substrates

      Ramakrishna Vetury, Akoustis
      Daeho Kim, Akoustis
      Ken Fallon, Akoustis
      Mary Winters, Akoustis Technologies
      Shawn Gibb, Akoustis
      Pinal Patel, Akoustis Technologies
      Michael D Hodge, Akoustis Technologies
      Michael A Mclain
      Ya Shen, Akoustis
      Rohan Houlden, Akoustis
      Jeffrey Shealy, Akoustis Technologies
      Download Paper

  • Wohlmuth, Walter

    Vanguard International Semiconductor Corporation, Taiwan

    • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

      Yi-Wei Lien, WIN Semiconductors Corp
      Wayne Lin, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Richard Jhan, WIN Semiconductors Corp
      Andy Tseng, WIN Semiconductors Corp
      Wei-Chou Wang, WIN Semiconductors Corp
      Clement Huang, WIN Semiconductors Corp
      Shinichiro Takatani, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

    • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Benny Ho, WIN Semiconductors Corp
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Won Lee, Kyong

    RFHIC Corporation

    • 12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry

      Mo Wu, Global Communication Semiconductors, LLC
      Won Sang Lee, RFHIC US Corp.
      Daniel Hou, Global Communication Semiconductors, LLC
      Kyong Won Lee, RFHIC Corporation
      Download Paper

  • Wu, Chao-Hsin

    National Taiwan University

    • 8.4 Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK

      Chun-Yen Peng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Shan-Fong Leong, National Taiwan University
      Download Paper

  • Wu, Dufei

    University of Illinois at Urbana Champaign

    • 14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links

      Yu-Ting Peng, University of Illinois at Urbana Champaign
      Dufei Wu, University of Illinois at Urbana Champaign
      Ardy Winoto, University of Illinois at Urbana Champaign
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  • Wu, Mo

    Global Communication Semiconductors, LLC

    • 12.5 Fabrication of 4-inch GaN/Diamond HEMT in a Compound Semiconductor Foundry

      Mo Wu, Global Communication Semiconductors, LLC
      Won Sang Lee, RFHIC US Corp.
      Daniel Hou, Global Communication Semiconductors, LLC
      Kyong Won Lee, RFHIC Corporation
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  • Y Osipov, Konstantin

    Ampleon Netherlands B.V.

    • 3.3 Novel approach for ED transistors integration in GaN HEMT technology

      Konstantin Y Osipov, Ampleon Netherlands B.V.
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
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  • Yabuhara, Yoshiki

    Sumitomo Electric Industries, Ltd, Itami

    • 14.6 Development of Si-doped 8-inch GaAs substrates

      Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Shuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Hirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Tatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, Kobe
      Satoshi Horikawa, Sumitomo Electric Industries, Ltd, Itami
      Kouji Morishige, Sumitomo Electric Industries, Ltd, Itami
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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  • Yagi, Kuniaki

    SICOXS Corporation

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
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  • Yamada, Atsushi

    Fujitsu Limited and Fujitsu Laboratories Ltd.

    • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Motonobu Sato, Fujitsu Laboratories Ltd.
      Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Kazukiyo Joshin, Fujitsu Laboratories Ltd.
      Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
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  • Yamaga, Shigeki

    New Japan Radio Co., Ltd

    • 6.4 How we have continued GaAs RFIC business in Japan; Survival History of New Japan Radio

      Shigeki Yamaga, New Japan Radio Co., Ltd
      Hiroyuki Yoshinaga, New Japan Radio Co., Ltd
      Takehiko Kameyama, New Japan Radio Co., Ltd
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  • Yamaguchi, Ryota

    University of Fukui

    • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

      Ryota Yamaguchi, University of Fukui
      Taisei Yamazaki, University of Fukui
      Takashi Nishitani, University of Fukui
      Joel T. Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
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  • Yamaki, Fumikazu

    Sumitomo Electric Device Innovations, Inc.

    • 4.5 Mass-Production of High Reliability GaN HEMT for Wireless Communication

      Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.
      Seigo Sano, Sumitomo Electric Device Innovations, Inc.
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  • Yamakoshi, Shigenobu

    Tamura Corporation

    • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

      Masataka Higashiwaki, National Institute of Information and Communications Technology
      Man Hoi Wong, National Institute of Information and Communications Technology
      Keita Konishi, Tokyo University of Agriculture and Technology
      Chia-Hung Lin, National Institute of Information and Communications Technology
      Naoki Hatta, SICOXS Corporation
      Kuniaki Yagi, SICOXS Corporation
      Ken Goto, Tamura Corporation
      Kohei Sasaki, Novel Crystal Technology, Inc
      Akito Kuramata, Novel Crystal Technology, Inc
      Shigenobu Yamakoshi, Tamura Corporation
      Hisashi Murakami, Tokyo University of Agriculture and Technology
      Yoshinao Kumagai, Tokyo University of Agriculture and Technology
      Download Paper

  • Yamazaki, Taisei

    University of Fukui

    • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

      Ryota Yamaguchi, University of Fukui
      Taisei Yamazaki, University of Fukui
      Takashi Nishitani, University of Fukui
      Joel T. Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper

  • Yang, Shuai

    Institute of Semiconductors, Chinese Academy of Sciences

    • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

      Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

  • Yoshida, Takefumi

    SCIOCS

    • 7.1 Real potential of GaN electric devices coming from GaN on GaN

      Yohei Otoki, SCIOCS
      Hajime Fujikura, SCIOCS
      Takefumi Yoshida, SCIOCS
      Fumimasa Harikiri, SCIOCS
      Tetsuji Fujimoto, SCIOCS
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  • Yoshida, Takehiro

    Sciocs Company Limited

    • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Chikashi Ito, KLA-Tencor Limited
      Varun Gupta, KLA-Tencor Limited
      Anoop Somanchi, KLA-Tencor Limited
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  • Yoshinaga, Hiroyuki

    New Japan Radio Co., Ltd

    • 6.4 How we have continued GaAs RFIC business in Japan; Survival History of New Japan Radio

      Shigeki Yamaga, New Japan Radio Co., Ltd
      Hiroyuki Yoshinaga, New Japan Radio Co., Ltd
      Takehiko Kameyama, New Japan Radio Co., Ltd
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  • Yuki, Kouichirou

    Yamaguchi University

    • 14.10 Fabrication of Hollow Structures Using Atomic Layer Deposition

      Masayuki Nakamura, SAMCO Inc.
      Takayuki Kobayashi, SAMCO Inc.
      Tatsurou Sagawa, SAMCO inc.
      Shin-ichi Motoyama
      Kouichirou Yuki, Yamaguchi University
      Ryo Inomoto, Yamaguchi University
      Osamu Tsuji, Yamaguchi University
      Kazuyuki Tadatomo, Yamaguchi University
      Peter C Wood, SAMCO Inc.
      Download Paper

  • Zaidi, Zaffar

    University of Sheffield

    • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Kean Boon Lee, University of Sheffield
      Zaffar Zaidi, University of Sheffield
      Peter Houston, University of Sheffield, Sheffield
      Martin Kuball, University of Bristol
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  • Zeng, Jianping

    Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China

    • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Download Paper

  • Zhang, Lian

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing

    • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

      Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

    • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Download Paper

    • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

      Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      C. Chen, Momentive Technologies
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

  • Zhang, Yun

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing

    • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

      Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Download Paper

    • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Download Paper

    • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

      Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      C. Chen, Momentive Technologies
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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  • Zhang, Zhaofu

    The Hong Kong University of Science and Technology

    • 5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

      Jiabei He, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
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    • 5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Mengyuan Hua, The Hong Kong University of Science and Technology
      Jiabei He, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Kevin J. Chen, The Hong Kong University of Science and Technology
      Download Paper