This paper gives an overview on the methodology and results obtained from performing early in-orbit demonstration and space qualification of microwave GaN technology for the European Space Agency PROBA V and Biomass missions.
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Abid, Idriss
IEMN-CNRS, Villeneuve d'Ascq-
May 01, 2019 // 2:00pm – 2:20pm
9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Riad Kabouche, IEMN-CNRS, Villeneuve d'AscqIdriss Abid, IEMN-CNRS, Villeneuve d'AscqMalek Zegaoui, IEMN-CNRS, Villeneuve d'AscqKai Cheng, Enkris Semiconductor, Inc.Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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Abolghasem, Payam
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Ai, Yujie
Institute of Semiconductors, Chinese Academy of Sciences-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Alcorn, Terry
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Alema, Fikadu
Agnitron Technology Incorporated, Chanhassen, MN 55317, USA-
May 02, 2019 // 3:40pm – 4:30pm
18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system
Nazar Orishchin, Agnitron Technology, IncFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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Allen, William
MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851-
May 02, 2019 // 1:30pm – 1:50pm
16.1 Yield Improvements in a High-Mix Fabrication Environment
Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
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Allerman, Andrew
Sandia National Laboratories-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Ansari, Azadeh
Georgia Institute of Technology-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Arabhavi, Akshay
ETH-Zurich-
May 02, 2019 // 1:50pm – 2:10pm
16.2 Effects of Electrochemical Etching on InP HEMT Fabrication
Diego Ruiz, ETH-ZurichAnna Hambitzer, ETH-ZurichAkshay Arabhavi, ETH-Zurich
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Armstrong, Andrew
Sandia National Laboratories-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Arnold, Jim
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Arturo, Marino
The MAX Group-
April 30, 2019 // 2:00pm – 2:20pm
3.2 Fast Throughput Improvement Through Speed Modeling using Tool Matching and Process Optimization
Marino Arturo, The MAX Group
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Asai, Naomi
Hosei University-
May 01, 2019 // 2:30pm – 2:50pm
10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching
Hiroshi Ohta, Osaka UniversityNaomi Asai, Hosei UniversityTakehiro Yoshida, Sciocs Company LimitedTomoyoshi Mishima, Osaka University
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Baca, Albert
Sandia National Laboratories-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Balram, Krishna
University of Bristol-
April 30, 2019 // 5:00pm – 5:20pm
4.4 Monolithic integration of Surface Acoustic Wave (SAW) filters on GaN HEMT dies: Avoiding impedance matching through energy trapping
Stefano Valle, University of BristolKrishna Balram, University of BristolMartin Cryan, University of Bristol
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Barner, Jeffrey
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Barnes, Andrew
European Space Agency-
April 08, 2019 // 11:00am – 12:00pm
1.3 First ESA missions to use gallium nitride (GaN) – a disruptive technology for space based payloads
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Bayruns, John
Duet Micro Electronics, Inc.-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Bayruns, Robert
Duet Micro Electronics, Inc.-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Behammer, Dag
United Monolithic Semiconductors GmbH-
April 30, 2019 // 4:20pm – 4:40pm
5.3 Modelling of Backside-induced ESD Defects in GaAs Front End Manufacturing
Markus Lanz, United Monolithic Semiconductors GmbHDag Behammer, United Monolithic Semiconductors GmbHHolger Weiner, United Monolithic Semiconductors GmbH
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Behmenburg, H.
AIXTRON SE, Herzogenrath-
May 02, 2019 // 3:40pm – 4:30pm
18.14 Buffer development for GaN power electronic applications using extrinsic carbon doping for a super-lattice structure
M. Marx, AIXTRON SE, HerzogenrathH. Behmenburg, AIXTRON SE, Herzogenrath
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Benveniste, Dan
Global Communciation Semiconductors, LLC-
May 01, 2019 // 4:20pm – 4:40pm
12.2 The State-of-Art of GaN/Diamond HEMT Manufacturing Technology And Device Performance
Daniel Hou, Global Communication Semiconductors, LLCDan Benveniste, Global Communciation Semiconductors, LLCRiccardo Soligo, Global Communciation Semiconductors, LLC
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Berkoh, Daniel
Skyworks Solution Inc-
May 02, 2019 // 2:10pm – 2:30pm
16.3 Lift-off Challenges in using CAMP Negative Photoresist Patterning in III-V IC Fabrication
Daniel Berkoh, Skyworks Solution Inc
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Best, Robbie
Skyworks Solutions-
May 02, 2019 // 2:30pm – 2:50pm
16.4 Gross Die Per Wafer and Yield Optimization for GaAs ICs with Sub-Micron Features
Robbie Best, Skyworks Solutions
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Blanck, Hervé
United Monolithic Semiconductors-
May 02, 2019 // 3:40pm – 4:30pm
18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Sandra Riedmüller, United Monolithic Semiconductors GmbHJan Grünenpütt, United Monolithic Semiconductors FranceManfred Madel, United Monolithic Semiconductors GmbHFerdinand Scholz, Inst. Of Functional Nanosystems University of UlmHervé Blanck, United Monolithic Semiconductors
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Bonilla, Marco
MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851-
May 02, 2019 // 1:30pm – 1:50pm
16.1 Yield Improvements in a High-Mix Fabrication Environment
Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
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Bothe, Kyle
University of Alberta-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Bourgeois, Franck
United Monolithic Semiconductors GmbH-
April 30, 2019 // 4:00pm – 4:20pm
5.2 A Systematic Data Mining Approach to separate Epitaxial Impacts from Process Impacts for GaAs pHEMT Technologies
Franck Bourgeois, United Monolithic Semiconductors GmbHPeter Gretz, United Monolithic Semiconductors GmbH
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Brand, Joseph
Duet Micro Electronics, Inc.-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Carey IV, Patrick
University of Florida-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Carter, Andy
Teledyne Scientific Company-
May 01, 2019 // 11:40am – 12:10pm
8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration
Miguel Urteaga, Teledyne Scientific CompanyAndy Carter, Teledyne Scientific CompanySangki Hong, Nhanced SemiconductorRobert Patti, Nhanced SemiconductorCarl Petteway, Nhanced SemiconductorGill Fountain, Nhanced Semiconductor
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Chandrasekar, Hareesh
Center for Device Thermography and Reliability, University of Bristol, Bristol, UK-
May 02, 2019 // 10:30am – 10:50am
15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKHareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UKTrevor Martin, IQE Europe, St Mellons, Cardiff, UK
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Chang, Tsu-His
HetInTec Corp.-
April 30, 2019 // 3:40pm – 4:10pm
4.1 Dynamic Range-enhanced Electronics and Materials
Abirami Sivananthan, Booz Allen HamiltonYoung-Kai Cheng, Defense Advanced Research Projects AgencyTsu-His Chang, HetInTec Corp.
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Chang, Yi-Sheng
Chang Gung University-
May 01, 2019 // 3:00pm – 3:20pm
9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process
Yi-Sheng Chang, Chang Gung UniversityRong Xuan, Technology Development Division, Episil-Precision Inc, TaiwanChih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
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Chen, Chien-Ju
-
May 02, 2019 // 3:40pm – 4:30pm
18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width
Chia-Jui Yu, National Tsing Hua UniversityTz-Chau LinChien-Ju ChenJyun-Hao LiaoMeng-Chyi Wu, National Tsing Hua University, Hsinchu
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Chen, Linlin
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Cheng, Kai
Enkris Semiconductor, Inc.-
May 01, 2019 // 2:00pm – 2:20pm
9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Riad Kabouche, IEMN-CNRS, Villeneuve d'AscqIdriss Abid, IEMN-CNRS, Villeneuve d'AscqMalek Zegaoui, IEMN-CNRS, Villeneuve d'AscqKai Cheng, Enkris Semiconductor, Inc.Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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Cheng, Kezia
Skyworks Solutions Inc.-
May 01, 2019 // 4:00pm – 4:20pm
12.1 Elimination of Metal Fencing by Optimizing Evaporator Dome Alignment
Kezia Cheng, Skyworks Solutions Inc.
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Cheng, Young-Kai
Defense Advanced Research Projects Agency-
April 30, 2019 // 3:40pm – 4:10pm
4.1 Dynamic Range-enhanced Electronics and Materials
Abirami Sivananthan, Booz Allen HamiltonYoung-Kai Cheng, Defense Advanced Research Projects AgencyTsu-His Chang, HetInTec Corp.
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Cheng, Zhe
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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CHENOT, Sébastien
Université Côte d’Azur, CNRS, CRHEA-
May 02, 2019 // 3:40pm – 4:30pm
18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications
Eric Guiot, SOITECOlvier ledoux, SOITEC S.Adavid sotta, SOITEC S.AAmélie DUSSAIGNE, CEA-LETI, Univ. Grenoble AlpesBenjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEASébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
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Chou, Tung-Yao
WIN Semiconductors Corp.-
April 30, 2019 // 4:10pm – 4:30pm
4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology
Tung-Yao Chou, WIN Semiconductors Corp.Dennis Williams, WIN Semiconductors CorpYu-Chi Wang, WIN Semiconductors Corp
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Choudhury, Arif
TriQuint Semiconductor, Inc.-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Clark, Andrew
IQE, Cardiff, UK-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Cryan, Martin
University of Bristol-
April 30, 2019 // 5:00pm – 5:20pm
4.4 Monolithic integration of Surface Acoustic Wave (SAW) filters on GaN HEMT dies: Avoiding impedance matching through energy trapping
Stefano Valle, University of BristolKrishna Balram, University of BristolMartin Cryan, University of Bristol
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Dalton, Ian
MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851-
May 02, 2019 // 1:30pm – 1:50pm
16.1 Yield Improvements in a High-Mix Fabrication Environment
Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
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Daly, Aidan
IQE PLC-
May 02, 2019 // 11:20am – 11:50am
14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers
Ben Stevens, IQE PLCAdam Jandl, IQE PLCAidan Daly, IQE PLCAndrew Joel, IQE, Cardiff, UK
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DAMILANO, Benjamin
Université Côte d’Azur, CNRS, CRHEA-
May 02, 2019 // 3:40pm – 4:30pm
18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications
Eric Guiot, SOITECOlvier ledoux, SOITEC S.Adavid sotta, SOITEC S.AAmélie DUSSAIGNE, CEA-LETI, Univ. Grenoble AlpesBenjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEASébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
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Dargis, Rytis
Translucent Inc.-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Debackere, Peter
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Debnath, Mukul
IQE plc-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Deitrich, Tom
Itron-
April 30, 2019 // 8:30am – 12:00pm
1.1 A Perspective on the Solutions and Needs of IoT, Utilities, and Smart Cities
Tom Deitrich, ItronDownload PaperBy almost any prediction the “Internet of Things” will connect many billions of devices to a global network in the coming decade. In the abstract, it is extremely difficult to understand the function and quantify the economics behind this trend. However, in the industrial networking space, the benefits to utilities and cities are already clearly driving economic and societal value. With applications such as distribution automation and distributed energy management, forward-thinking utilities are reducing operating costs, improving quality of service, and saving natural resources. Similarly, through streetlight automation and intelligent methane sensing, “smart cities” are harnessing the power of connectivity to create greener, safer, and more efficient communities with engaged citizens. This talk will review the benefits and challenges of smart utilities and cities, with a focus on the underlying technologies. The current role of compound semiconductors, such as GaAs, will be discussed, as well as a perspective around future innovation needs to enhance safety, security, and efficiency in the end applications.
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Deng, Shihu
Ferrotec (USA) Corp.-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Deng, Siyu
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Dentai, Andrew
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Dindukurthi, Ganesh
TRUMPF Photonics Inc-
May 01, 2019 // 1:30pm – 2:00pm
10.1 Process Optimization for Improved Adhesion of Ti/Pt/Au to SiN and GaAs
Ganesh Dindukurthi, TRUMPF Photonics Inc
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Dioses, Alberto
EMD Performance Materials-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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DOGMUS, Ezgi
Yole Développement-
April 30, 2019 // 2:50pm – 3:10pm
2.4 5G impact on mobile RF Front End
Ezgi DOGMUS, Yole Développement
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Dong, Boyu
NAURA Technology Group Co., Ltd.-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Douglas, Erica
Sandia National Laboratories-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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DUSSAIGNE, Amélie
CEA-LETI, Univ. Grenoble Alpes-
May 02, 2019 // 3:40pm – 4:30pm
18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications
Eric Guiot, SOITECOlvier ledoux, SOITEC S.Adavid sotta, SOITEC S.AAmélie DUSSAIGNE, CEA-LETI, Univ. Grenoble AlpesBenjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEASébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
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Dvir, Gadi
Strategy Implementation LLC-
April 30, 2019 // 1:30pm – 2:00pm
3.1 Complexity VS. Continuous Process Improvement
Gadi Dvir, Strategy Implementation LLC
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Eddy, Charles
US Naval Research Laboratory-
May 02, 2019 // 3:10pm – 3:30pm
17.5 Understanding GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices
Charles Eddy, US Naval Research Laboratory
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Edwards, Stuart
IQE Silicon-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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El-Helw, Sarah
MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851-
May 02, 2019 // 1:30pm – 1:50pm
16.1 Yield Improvements in a High-Mix Fabrication Environment
Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
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Evans, Peter
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Fang, Xiao-Ming
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Fastenau, Joel
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Feigelson, Boris
Naval Research Laboratory-
May 01, 2019 // 5:20pm – 5:40pm
12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feigelson, Naval Research Laboratory
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Feng, Qiong
Institute of Semiconductors,Chinese Academy of Sciences-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Fetters, Matt
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Fijal, Jonathan
Veeco Instruments-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Fisher, Jeremy
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Fountain, Gill
Nhanced Semiconductor-
May 01, 2019 // 11:40am – 12:10pm
8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration
Miguel Urteaga, Teledyne Scientific CompanyAndy Carter, Teledyne Scientific CompanySangki Hong, Nhanced SemiconductorRobert Patti, Nhanced SemiconductorCarl Petteway, Nhanced SemiconductorGill Fountain, Nhanced Semiconductor
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Frey, Phil
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Fujita, Shizuo
Kyoto University-
May 02, 2019 // 1:30pm – 2:00pm
17.1 P-type semiconductors in gallium oxide electronics
Kentaro Kaneko, Kyoto UniversityShu Takemoto, Kyoto UniversityShin-ichi Kan, Kyoto UniversityTakashi Shinohe, FLOSFIA INC.Shizuo Fujita, Kyoto University
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Furlong, Mark
IQE IR-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Gajewski, Don
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Gajewski, Donald
Wolfspeed, A Cree Company-
May 01, 2019 // 5:10pm – 5:40pm
11.4 JEDEC Guidelines and Standards for Compound Semiconductors
Donald Gajewski, Wolfspeed, A Cree Company
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Gan, Kim
BISTel America-
April 30, 2019 // 2:20pm – 2:40pm
3.3 Improving Root Cause Analysis Accuracy Using Advanced Trace Analytics
Kim Gan, BISTel AmericaHein Lam, Global Foundries
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Ganguly, Satyaki
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Gao, Jennifer
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Gretz, Peter
United Monolithic Semiconductors GmbH-
April 30, 2019 // 4:00pm – 4:20pm
5.2 A Systematic Data Mining Approach to separate Epitaxial Impacts from Process Impacts for GaAs pHEMT Technologies
Franck Bourgeois, United Monolithic Semiconductors GmbHPeter Gretz, United Monolithic Semiconductors GmbH
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Griffin, John
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Grünenpütt, Jan
United Monolithic Semiconductors France-
May 02, 2019 // 3:40pm – 4:30pm
18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Sandra Riedmüller, United Monolithic Semiconductors GmbHJan Grünenpütt, United Monolithic Semiconductors FranceManfred Madel, United Monolithic Semiconductors GmbHFerdinand Scholz, Inst. Of Functional Nanosystems University of UlmHervé Blanck, United Monolithic Semiconductors
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Gucmann, Filip
Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL-
May 01, 2019 // 4:30pm – 4:50pm
11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.
Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TLJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKAndrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
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Guiot, Eric
SOITEC-
May 02, 2019 // 3:40pm – 4:30pm
18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications
Eric Guiot, SOITECOlvier ledoux, SOITEC S.Adavid sotta, SOITEC S.AAmélie DUSSAIGNE, CEA-LETI, Univ. Grenoble AlpesBenjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEASébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
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Gupta, Aditya
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Hambitzer, Anna
ETH-Zurich-
May 02, 2019 // 1:50pm – 2:10pm
16.2 Effects of Electrochemical Etching on InP HEMT Fabrication
Diego Ruiz, ETH-ZurichAnna Hambitzer, ETH-ZurichAkshay Arabhavi, ETH-Zurich
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Hardiman, Chris
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Henry, H. George
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Higham, Eric
Strategy Analytics-
April 30, 2019 // 2:00pm – 2:30pm
2.2 How Will 5G Influence the RF Compound Semiconductor Industry?
Eric Higham, Strategy Analytics
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Ho, Vinh
Skyworks Solutions Inc.-
April 30, 2019 // 5:00pm – 5:20pm
5.5 Gold Electroplating Optimization in Diffusion-Limited Regime
Vinh Ho, Skyworks Solutions Inc.
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Hoefler, Gloria
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Hong, Sangki
Nhanced Semiconductor-
May 01, 2019 // 11:40am – 12:10pm
8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration
Miguel Urteaga, Teledyne Scientific CompanyAndy Carter, Teledyne Scientific CompanySangki Hong, Nhanced SemiconductorRobert Patti, Nhanced SemiconductorCarl Petteway, Nhanced SemiconductorGill Fountain, Nhanced Semiconductor
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Hou, Daniel
Global Communication Semiconductors, LLC-
May 01, 2019 // 4:20pm – 4:40pm
12.2 The State-of-Art of GaN/Diamond HEMT Manufacturing Technology And Device Performance
Daniel Hou, Global Communication Semiconductors, LLCDan Benveniste, Global Communciation Semiconductors, LLCRiccardo Soligo, Global Communciation Semiconductors, LLC
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Hu, Chih-Wei
Technology Development Division, Episil-Precision Inc, Taiwan-
May 01, 2019 // 3:00pm – 3:20pm
9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process
Yi-Sheng Chang, Chang Gung UniversityRong Xuan, Technology Development Division, Episil-Precision Inc, TaiwanChih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
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Huang, Sung-Wen
National Chiao-Tung University-
May 02, 2019 // 3:40pm – 4:30pm
18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates
Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesHao-Chung Kuo, National Chiao-Tung UniversitySung-Wen Huang, National Chiao-Tung UniversityXinke Liu, N/A
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Huang, Xiaokang
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Hughes, Gary
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Ismail, Fawad
University of Illinois at Urbana-Champaign-
May 02, 2019 // 2:50pm – 3:10pm
17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations
Fawad Ismail, University of Illinois at Urbana-ChampaignKyekyoon Kim, University of Illinois at Urbana-ChampaignMatthew Landi, University of Illinois at Urbana-Champaign
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Jacobs, Alan
U.S. Naval Research Laboratory, Washington DC-
May 01, 2019 // 5:20pm – 5:40pm
12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feigelson, Naval Research Laboratory
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James, Adam
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Jandl, Adam
IQE PLC-
May 02, 2019 // 11:20am – 11:50am
14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers
Ben Stevens, IQE PLCAdam Jandl, IQE PLCAidan Daly, IQE PLCAndrew Joel, IQE, Cardiff, UK
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Janis, Brittany
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Jia, Lifang
Institute of Semiconductors, Chinese Academy of Sciences-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Jiang, Qidu
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Jin, Jinman
Wavice Inc.-
May 01, 2019 // 11:20am – 11:40am
8.3 GaN quasi-MMIC HPAs with IPDs on HRS using via first TSV process
Jinman Jin, Wavice Inc.
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Joel, Andrew
IQE, Cardiff, UK-
May 02, 2019 // 11:20am – 11:50am
14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers
Ben Stevens, IQE PLCAdam Jandl, IQE PLCAidan Daly, IQE PLCAndrew Joel, IQE, Cardiff, UK
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Jones, Evan
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Kabouche, Riad
IEMN-CNRS, Villeneuve d'Ascq-
May 01, 2019 // 2:00pm – 2:20pm
9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Riad Kabouche, IEMN-CNRS, Villeneuve d'AscqIdriss Abid, IEMN-CNRS, Villeneuve d'AscqMalek Zegaoui, IEMN-CNRS, Villeneuve d'AscqKai Cheng, Enkris Semiconductor, Inc.Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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Kan, Shin-ichi
Kyoto University-
May 02, 2019 // 1:30pm – 2:00pm
17.1 P-type semiconductors in gallium oxide electronics
Kentaro Kaneko, Kyoto UniversityShu Takemoto, Kyoto UniversityShin-ichi Kan, Kyoto UniversityTakashi Shinohe, FLOSFIA INC.Shizuo Fujita, Kyoto University
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Kaneko, Kentaro
Kyoto University-
May 02, 2019 // 1:30pm – 2:00pm
17.1 P-type semiconductors in gallium oxide electronics
Kentaro Kaneko, Kyoto UniversityShu Takemoto, Kyoto UniversityShin-ichi Kan, Kyoto UniversityTakashi Shinohe, FLOSFIA INC.Shizuo Fujita, Kyoto University
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Kapedia, Rehan
University of Southern California-
May 02, 2019 // 3:40pm – 4:30pm
18.3 Templated Liquid Phase Growth Combined with MOCVD for Growth of Crystalline III-V’s Directly on Oxide and Nitride Surfaces
Debarghya Sarkar, University of Southern CaliforniaRehan Kapedia, University of Southern California
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Kaplar, Robert
Sandia National Labs, Albuquerque, NM-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Karboyan, Serge
Nexperia. Manchester, UK-
May 02, 2019 // 10:30am – 10:50am
15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKHareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UKTrevor Martin, IQE Europe, St Mellons, Cardiff, UK
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Kattner, Mike
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Kawano, Yoichi
Fujitsu Limited and Fujitsu Laboratories Ltd.-
May 01, 2019 // 3:10pm – 3:30pm
10.5 Backside Processing of RF GaN-on-GaN HEMTs Considering Thermal Management
Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Yoichi Kawano, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Kelkar, Amit
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Kelly, Frank
University of Illinois at Urbana-Champaign-
May 02, 2019 // 3:40pm – 4:30pm
18.11 Development of GaN Vertical High-Power Devices Enabled by Plasma-Assisted Molecular Beam Epitaxy
Frank Kelly, University of Illinois at Urbana-ChampaignRiley Vesto, University of Illinois at Urbana-Champaign
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Kim, DeaGyu
Georgia Institute of Technology-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Kim, Kyekyoon
University of Illinois at Urbana-Champaign-
May 02, 2019 // 2:50pm – 3:10pm
17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations
Fawad Ismail, University of Illinois at Urbana-ChampaignKyekyoon Kim, University of Illinois at Urbana-ChampaignMatthew Landi, University of Illinois at Urbana-Champaign
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Kish, Fred
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Klein, Brianna
Sandia National Laboratories-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Kotani, Junji
Fujitsu Limited and Fujitsu Laboratories Ltd.-
May 01, 2019 // 3:10pm – 3:30pm
10.5 Backside Processing of RF GaN-on-GaN HEMTs Considering Thermal Management
Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Yoichi Kawano, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Kotula, Paul
Sandia National Laboratories-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Krysiak, Hubert
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Kuo, Hao-Chung
National Chiao-Tung University-
May 02, 2019 // 3:40pm – 4:30pm
18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates
Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesHao-Chung Kuo, National Chiao-Tung UniversitySung-Wen Huang, National Chiao-Tung UniversityXinke Liu, N/A
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Lal, Vikrant
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Lam, Hein
Global Foundries-
April 30, 2019 // 2:20pm – 2:40pm
3.3 Improving Root Cause Analysis Accuracy Using Advanced Trace Analytics
Kim Gan, BISTel AmericaHein Lam, Global Foundries
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Lam, Wayne
IHS Markit-
April 30, 2019 // 10:00am – 11:00am
1.2 Form follows function: mobile use-cases dictates electronic design, not the other way around
Wayne Lam, IHS MarkitDownload PaperThe design paradigm for computing has historically been determined by the form factor of the core electronics. Ever since the mobile revolution, that design paradigm has been turned on its head. This talk will focus on the designs of mobile devices such as smartphones and wearables which are purpose built for a specific use-case as well as for the ergonomics of the user. Using teardowns conducted by IHS Markit, details of core electronic and physical designs are highlighted, and evolutions tracked from generation to generation. We will be exploring the 10 generations of Apple iPhones and 4 generations of the Apple Watches as core examples of how form follows function forcing innovative electronic designs to accommodate for this mobile design philosophy. The study is made possible by the IHS Markit teardown and cost benchmarking team over the course of the last 10+ years. The mobile products covered should serve as a good representation of how the semiconductor manufacturers are evolving their products to accommodate mobile design dictated by customer’s needs.
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Landi, Matthew
University of Illinois at Urbana-Champaign-
May 02, 2019 // 2:50pm – 3:10pm
17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations
Fawad Ismail, University of Illinois at Urbana-ChampaignKyekyoon Kim, University of Illinois at Urbana-ChampaignMatthew Landi, University of Illinois at Urbana-Champaign
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Lanz, Markus
United Monolithic Semiconductors GmbH-
April 30, 2019 // 4:20pm – 4:40pm
5.3 Modelling of Backside-induced ESD Defects in GaAs Front End Manufacturing
Markus Lanz, United Monolithic Semiconductors GmbHDag Behammer, United Monolithic Semiconductors GmbHHolger Weiner, United Monolithic Semiconductors GmbH
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Lawson, David
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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ledoux, Olvier
SOITEC S.A-
May 02, 2019 // 3:40pm – 4:30pm
18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications
Eric Guiot, SOITECOlvier ledoux, SOITEC S.Adavid sotta, SOITEC S.AAmélie DUSSAIGNE, CEA-LETI, Univ. Grenoble AlpesBenjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEASébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
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Liao, Jyun-Hao
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May 02, 2019 // 3:40pm – 4:30pm
18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width
Chia-Jui Yu, National Tsing Hua UniversityTz-Chau LinChien-Ju ChenJyun-Hao LiaoMeng-Chyi Wu, National Tsing Hua University, Hsinchu
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Lin, Tz-Chau
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May 02, 2019 // 3:40pm – 4:30pm
18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width
Chia-Jui Yu, National Tsing Hua UniversityTz-Chau LinChien-Ju ChenJyun-Hao LiaoMeng-Chyi Wu, National Tsing Hua University, Hsinchu
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Liu, Amy
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Liu, Paul
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Liu, Xinke
N/A-
May 02, 2019 // 3:40pm – 4:30pm
18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates
Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesHao-Chung Kuo, National Chiao-Tung UniversitySung-Wen Huang, National Chiao-Tung UniversityXinke Liu, N/A
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Long, Cainan
University of Bristol-
May 02, 2019 // 11:10am – 11:30am
15.3 Interfacial mechanical stability and thermal resistance of GaN-on-diamond
Cainan Long, University of Bristol
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Long, Rathnait
MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851-
May 02, 2019 // 1:30pm – 1:50pm
16.1 Yield Improvements in a High-Mix Fabrication Environment
Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
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Lubyshev, Dmitri
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Lum, Earl
EJL Wireless Research LLC-
April 30, 2019 // 1:30pm – 2:00pm
2.1 5G Implications for the Compound Semiconductor Industry
Earl Lum, EJL Wireless Research LLC
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Luo, Xiaorong
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Madel, Manfred
United Monolithic Semiconductors GmbH-
May 02, 2019 // 3:40pm – 4:30pm
18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Sandra Riedmüller, United Monolithic Semiconductors GmbHJan Grünenpütt, United Monolithic Semiconductors FranceManfred Madel, United Monolithic Semiconductors GmbHFerdinand Scholz, Inst. Of Functional Nanosystems University of UlmHervé Blanck, United Monolithic Semiconductors
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Maranowski, Steve
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Martin, Trevor
IQE Europe, St Mellons, Cardiff, UK-
May 02, 2019 // 10:30am – 10:50am
15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKHareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UKTrevor Martin, IQE Europe, St Mellons, Cardiff, UK
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Marx, M.
AIXTRON SE, Herzogenrath-
May 02, 2019 // 3:40pm – 4:30pm
18.14 Buffer development for GaN power electronic applications using extrinsic carbon doping for a super-lattice structure
M. Marx, AIXTRON SE, HerzogenrathH. Behmenburg, AIXTRON SE, Herzogenrath
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Mason, John
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Mattera Jr., Dr. Vincent
II-VI, Incorporated-
May 02, 2019 // 8:00am – 9:00am
13.1 VCSELs at a Glance
Dr. Vincent Mattera Jr., II-VI, Incorporated
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Mauer, Laura
Ferrotec (USA) Corp.-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Medjdoub, Farid
IEMN-CNRS, Villeneuve d'Ascq-
May 01, 2019 // 2:00pm – 2:20pm
9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Riad Kabouche, IEMN-CNRS, Villeneuve d'AscqIdriss Abid, IEMN-CNRS, Villeneuve d'AscqMalek Zegaoui, IEMN-CNRS, Villeneuve d'AscqKai Cheng, Enkris Semiconductor, Inc.Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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Milligan, Jim
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Mishima, Tomoyoshi
Osaka University-
May 01, 2019 // 2:30pm – 2:50pm
10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching
Hiroshi Ohta, Osaka UniversityNaomi Asai, Hosei UniversityTakehiro Yoshida, Sciocs Company LimitedTomoyoshi Mishima, Osaka University
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Modi, Nikhil
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Moens, Peter
ON Semiconductor, Corp. R&D-
May 01, 2019 // 1:30pm – 2:00pm
9.1 AlGaN/GaN Power Devices in a Si World : From R&D to Manufacturing and Reliability
Peter Moens, ON Semiconductor, Corp. R&D
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Mohata, Dheeraj
Global Communication Semiconductors, LLC-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Morgan, Aled
IQE Silicon-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Morishita, Tomonori
Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd-
May 02, 2019 // 11:50am – 12:20pm
14.4 Crystal growth and wafer processing of 6″ GaAs substrate for Lasers
Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
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Moule, Taylor
Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol-
May 02, 2019 // 11:30am – 11:50am
15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs
Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of BristolYuewei Zhang, Ohio State University, ColumbusZhanbo Xia, Ohio State University, ColumbusSiddharth Rajan, The Ohio State University, Columbus
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Mueller, Mengdi
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Namishia, Dan
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Nelson, Scott
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Nulman, Kenji
Veeco Instruments-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Odnoblyudov, Vladimir
QROMIS, USA-
May 01, 2019 // 2:20pm – 2:40pm
9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates
Marko Tadjer, U.S. Naval Research LaboratoryVladimir Odnoblyudov, QROMIS, USA
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Ohta, Hiroshi
Osaka University-
May 01, 2019 // 2:30pm – 2:50pm
10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching
Hiroshi Ohta, Osaka UniversityNaomi Asai, Hosei UniversityTakehiro Yoshida, Sciocs Company LimitedTomoyoshi Mishima, Osaka University
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Okamoto, Toru
Toyoda Gosei Co., Ltd.-
May 01, 2019 // 10:30am – 11:00am
7.1 Advances in Vertical GaN Power Devices on GaN Substrates
Toru Okamoto, Toyoda Gosei Co., Ltd.
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Orishchin, Nazar
Agnitron Technology, Inc-
May 02, 2019 // 3:40pm – 4:30pm
18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system
Nazar Orishchin, Agnitron Technology, IncFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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Osika, David
Duet Micro Electronics, Inc.-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Osinsky, Andrei
Agnitron Technology Incorporated, Chanhassen, MN 55317, USA-
May 02, 2019 // 3:40pm – 4:30pm
18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system
Nazar Orishchin, Agnitron Technology, IncFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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Ouyang, Dongfa
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Park, Minyo
Georgia Institute of Technology-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Pastrone, Craig
MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851-
May 02, 2019 // 1:30pm – 1:50pm
16.1 Yield Improvements in a High-Mix Fabrication Environment
Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
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Patti, Robert
Nhanced Semiconductor-
May 01, 2019 // 11:40am – 12:10pm
8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration
Miguel Urteaga, Teledyne Scientific CompanyAndy Carter, Teledyne Scientific CompanySangki Hong, Nhanced SemiconductorRobert Patti, Nhanced SemiconductorCarl Petteway, Nhanced SemiconductorGill Fountain, Nhanced Semiconductor
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Pearton, Stephen
University of Florida-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Pelzel, Rodney
IQE, Cardiff, UK-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Petteway, Carl
Nhanced Semiconductor-
May 01, 2019 // 11:40am – 12:10pm
8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration
Miguel Urteaga, Teledyne Scientific CompanyAndy Carter, Teledyne Scientific CompanySangki Hong, Nhanced SemiconductorRobert Patti, Nhanced SemiconductorCarl Petteway, Nhanced SemiconductorGill Fountain, Nhanced Semiconductor
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Pomeroy, James
University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK-
May 01, 2019 // 4:30pm – 4:50pm
11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.
Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TLJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKAndrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
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Qiu, Junyi
University of Illinois at Urbana-Champaign-
May 02, 2019 // 3:40pm – 4:30pm
18.10 Reconfigurable 43 Gb/s Optical Link Test Based Upon On-Wafer Probes of GaAs Photodetectors and VCSELs up to 85C
Junyi Qiu, University of Illinois at Urbana-Champaign
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Radulescu, Fabian
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Rajan, Siddharth
The Ohio State University, Columbus-
May 02, 2019 // 11:30am – 11:50am
15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs
Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of BristolYuewei Zhang, Ohio State University, ColumbusZhanbo Xia, Ohio State University, ColumbusSiddharth Rajan, The Ohio State University, Columbus
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Rasbot, Dave
Global Communication Semiconductors, LLC-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Ren, Fan
University of Florida-
May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Patrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida
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Rennie, David
EMD Performance Materials-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Ridpath, Christopher
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Riedmüller, Sandra
United Monolithic Semiconductors GmbH-
May 02, 2019 // 3:40pm – 4:30pm
18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Sandra Riedmüller, United Monolithic Semiconductors GmbHJan Grünenpütt, United Monolithic Semiconductors FranceManfred Madel, United Monolithic Semiconductors GmbHFerdinand Scholz, Inst. Of Functional Nanosystems University of UlmHervé Blanck, United Monolithic Semiconductors
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Riege, Jens
Skyworks Solutions, Inc.-
April 30, 2019 // 2:40pm – 3:10pm
3.4 Implementation of Automated Process Dashboards
Jens Riege, Skyworks Solutions, Inc.
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Ruiz, Diego
ETH-Zurich-
May 02, 2019 // 1:50pm – 2:10pm
16.2 Effects of Electrochemical Etching on InP HEMT Fabrication
Diego Ruiz, ETH-ZurichAnna Hambitzer, ETH-ZurichAkshay Arabhavi, ETH-Zurich
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Sagan, John
EMD Performance Materials-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Sarkar, Debarghya
University of Southern California-
May 02, 2019 // 3:40pm – 4:30pm
18.3 Templated Liquid Phase Growth Combined with MOCVD for Growth of Crystalline III-V’s Directly on Oxide and Nitride Surfaces
Debarghya Sarkar, University of Southern CaliforniaRehan Kapedia, University of Southern California
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Sarker, Palash
University of Illinois at Urbana-Champaign-
May 02, 2019 // 3:40pm – 4:30pm
18.4 GaN High-Performance Low-Leakage p-Islet MPS Diodes Enabled by PAMBE-Based Selective Area Growth
Palash Sarker, University of Illinois at Urbana-Champaign
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Sarua, Andrei
Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL-
May 01, 2019 // 4:30pm – 4:50pm
11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.
Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TLJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKAndrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
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Schmukler, Bruce
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Scholz, Ferdinand
Inst. Of Functional Nanosystems University of Ulm-
May 02, 2019 // 3:40pm – 4:30pm
18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Sandra Riedmüller, United Monolithic Semiconductors GmbHJan Grünenpütt, United Monolithic Semiconductors FranceManfred Madel, United Monolithic Semiconductors GmbHFerdinand Scholz, Inst. Of Functional Nanosystems University of UlmHervé Blanck, United Monolithic Semiconductors
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Shelton, Doug
CANON USA INC.-
May 02, 2019 // 2:50pm – 3:10pm
16.5 Development of stepper solutions for new IoT device challenges
Bunsuke Takeshita, CANON INC.Doug Shelton, CANON USA INC.
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Sheppard, Scott
Wolfspeed | A Cree Company-
May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Kyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company
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Shin, Kai
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Shinohe, Takashi
FLOSFIA INC.-
May 02, 2019 // 1:30pm – 2:00pm
17.1 P-type semiconductors in gallium oxide electronics
Kentaro Kaneko, Kyoto UniversityShu Takemoto, Kyoto UniversityShin-ichi Kan, Kyoto UniversityTakashi Shinohe, FLOSFIA INC.Shizuo Fujita, Kyoto University
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Shiozaki, Koji
Nagoya University-
May 01, 2019 // 9:00am – 9:30am
6.2 GaN-based Electrified Mobility for Sustainable Society
Koji Shiozaki, Nagoya University
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Singh, Manikant
University of Bristol-
May 02, 2019 // 10:30am – 10:50am
15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKHareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UKTrevor Martin, IQE Europe, St Mellons, Cardiff, UK
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Sivananthan, Abirami
Booz Allen Hamilton-
April 30, 2019 // 3:40pm – 4:10pm
4.1 Dynamic Range-enhanced Electronics and Materials
Abirami Sivananthan, Booz Allen HamiltonYoung-Kai Cheng, Defense Advanced Research Projects AgencyTsu-His Chang, HetInTec Corp.
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Snook, Megan
Northrop Grumman Corporation-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
Kai Shin, Northrop Grumman CorporationBrittany Janis, Northrop Grumman CorporationJohn Mason, Northrop Grumman CorporationGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHChristopher Ridpath, Northrop Grumman CorporationMegan Snook, Northrop Grumman CorporationAditya Gupta, Northrop Grumman CorporationH. George Henry, Northrop Grumman CorporationDavid Lawson, Northrop Grumman CorporationJim Arnold, Northrop Grumman Corporation
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Soligo, Riccardo
Global Communciation Semiconductors, LLC-
May 01, 2019 // 4:20pm – 4:40pm
12.2 The State-of-Art of GaN/Diamond HEMT Manufacturing Technology And Device Performance
Daniel Hou, Global Communication Semiconductors, LLCDan Benveniste, Global Communciation Semiconductors, LLCRiccardo Soligo, Global Communciation Semiconductors, LLC
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sotta, david
SOITEC S.A-
May 02, 2019 // 3:40pm – 4:30pm
18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications
Eric Guiot, SOITECOlvier ledoux, SOITEC S.Adavid sotta, SOITEC S.AAmélie DUSSAIGNE, CEA-LETI, Univ. Grenoble AlpesBenjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEASébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
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Stevens, Ben
IQE PLC-
May 02, 2019 // 11:20am – 11:50am
14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers
Ben Stevens, IQE PLCAdam Jandl, IQE PLCAidan Daly, IQE PLCAndrew Joel, IQE, Cardiff, UK
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Stockton, Steve
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Sun, Tao
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Tadjer, Marko
U.S. Naval Research Laboratory-
May 01, 2019 // 2:20pm – 2:40pm
9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates
Marko Tadjer, U.S. Naval Research LaboratoryVladimir Odnoblyudov, QROMIS, USA
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Takemoto, Shu
Kyoto University-
May 02, 2019 // 1:30pm – 2:00pm
17.1 P-type semiconductors in gallium oxide electronics
Kentaro Kaneko, Kyoto UniversityShu Takemoto, Kyoto UniversityShin-ichi Kan, Kyoto UniversityTakashi Shinohe, FLOSFIA INC.Shizuo Fujita, Kyoto University
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Takeshita, Bunsuke
CANON INC.-
May 02, 2019 // 2:50pm – 3:10pm
16.5 Development of stepper solutions for new IoT device challenges
Bunsuke Takeshita, CANON INC.Doug Shelton, CANON USA INC.
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Tischler, Joseph
U.S. Naval Research Laboratory-
May 01, 2019 // 5:00pm – 5:20pm
12.4 3D Nanoprinting of Grayscale Features in GaN Devices to Reduce Peak Electric Fields
Joseph Tischler, U.S. Naval Research Laboratory
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Tran, Van
Qorvo-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Uemura, Keisuke
Hokkaido University-
May 01, 2019 // 2:00pm – 2:30pm
10.2 Damage-less Wet Etching for Normally-off AlGaN/GaN HEMTs using Photo-electrochemical Reactions
Keisuke Uemura, Hokkaido University
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Urteaga, Miguel
Teledyne Scientific Company-
May 01, 2019 // 11:40am – 12:10pm
8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration
Miguel Urteaga, Teledyne Scientific CompanyAndy Carter, Teledyne Scientific CompanySangki Hong, Nhanced SemiconductorRobert Patti, Nhanced SemiconductorCarl Petteway, Nhanced SemiconductorGill Fountain, Nhanced Semiconductor
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Vaddepaty, Bala
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Valle, Stefano
University of Bristol-
April 30, 2019 // 5:00pm – 5:20pm
4.4 Monolithic integration of Surface Acoustic Wave (SAW) filters on GaN HEMT dies: Avoiding impedance matching through energy trapping
Stefano Valle, University of BristolKrishna Balram, University of BristolMartin Cryan, University of Bristol
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Veliadis, Victor
PowerAmerica-
May 01, 2019 // 11:00am – 11:30am
7.2 Accelerating Commercialization of Wide-Bandgap Power Electronics – The Power America Manufacturing Initiative
Victor Veliadis, PowerAmerica
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Vesto, Riley
University of Illinois at Urbana-Champaign-
May 02, 2019 // 3:40pm – 4:30pm
18.11 Development of GaN Vertical High-Power Devices Enabled by Plasma-Assisted Molecular Beam Epitaxy
Frank Kelly, University of Illinois at Urbana-ChampaignRiley Vesto, University of Illinois at Urbana-Champaign
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Vijayendran, Anil
Veeco Instruments-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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Wang, David
Global Communication Semiconductors, LLC-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Wang, Hao-Yu
Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences-
May 02, 2019 // 3:40pm – 4:30pm
18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates
Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesHao-Chung Kuo, National Chiao-Tung UniversitySung-Wen Huang, National Chiao-Tung UniversityXinke Liu, N/A
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Wang, Yu-Chi
WIN Semiconductors Corp-
April 30, 2019 // 4:10pm – 4:30pm
4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology
Tung-Yao Chou, WIN Semiconductors Corp.Dennis Williams, WIN Semiconductors CorpYu-Chi Wang, WIN Semiconductors Corp
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Wei, Jie
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Weiner, Holger
United Monolithic Semiconductors GmbH-
April 30, 2019 // 4:20pm – 4:40pm
5.3 Modelling of Backside-induced ESD Defects in GaAs Front End Manufacturing
Markus Lanz, United Monolithic Semiconductors GmbHDag Behammer, United Monolithic Semiconductors GmbHHolger Weiner, United Monolithic Semiconductors GmbH
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Williams, Dennis
WIN Semiconductors Corp-
April 30, 2019 // 4:10pm – 4:30pm
4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology
Tung-Yao Chou, WIN Semiconductors Corp.Dennis Williams, WIN Semiconductors CorpYu-Chi Wang, WIN Semiconductors Corp
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Wischmeyer, Frank
AIXTRON SE-
May 01, 2019 // 9:30am – 10:00am
6.3 Epitaxy production technologies enabling next generation product roadmaps of wide band-gap semiconductor device industry
Frank Wischmeyer, AIXTRON SE
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Wu, Meng-Chyi
National Tsing Hua University, Hsinchu-
May 02, 2019 // 3:40pm – 4:30pm
18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width
Chia-Jui Yu, National Tsing Hua UniversityTz-Chau LinChien-Ju ChenJyun-Hao LiaoMeng-Chyi Wu, National Tsing Hua University, Hsinchu
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Xia, Zhanbo
Ohio State University, Columbus-
May 02, 2019 // 11:30am – 11:50am
15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs
Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of BristolYuewei Zhang, Ohio State University, ColumbusZhanbo Xia, Ohio State University, ColumbusSiddharth Rajan, The Ohio State University, Columbus
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Xuan, Rong
Technology Development Division, Episil-Precision Inc, Taiwan-
May 01, 2019 // 3:00pm – 3:20pm
9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process
Yi-Sheng Chang, Chang Gung UniversityRong Xuan, Technology Development Division, Episil-Precision Inc, TaiwanChih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
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Yamada, Atsushi
Fujitsu Limited and Fujitsu Laboratories Ltd.-
May 01, 2019 // 3:10pm – 3:30pm
10.5 Backside Processing of RF GaN-on-GaN HEMTs Considering Thermal Management
Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.Yoichi Kawano, Fujitsu Limited and Fujitsu Laboratories Ltd.
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Yang, Chao
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Yang, Yuefei
Global Communication Semiconductors, LLC-
April 30, 2019 // 2:30pm – 2:50pm
2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications
Dheeraj Mohata, Global Communication Semiconductors, LLCYuefei Yang, Global Communication Semiconductors, LLCDave Rasbot, Global Communication Semiconductors, LLCDavid Wang, Global Communication Semiconductors, LLCRobert Bayruns, Duet Micro Electronics, Inc.John Bayruns, Duet Micro Electronics, Inc.David Osika, Duet Micro Electronics, Inc.Joseph Brand, Duet Micro Electronics, Inc.
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Yanka, Robert
IQE plc-
April 30, 2019 // 4:30pm – 5:00pm
4.3 Epitaxial material for RF filters
Andrew Clark, IQE, Cardiff, UKRytis Dargis, Translucent Inc.Mukul Debnath, IQE plcRobert Yanka, IQE plcRodney Pelzel, IQE, Cardiff, UKMinyo Park, Georgia Institute of TechnologyDeaGyu Kim, Georgia Institute of TechnologyAzadeh Ansari, Georgia Institute of Technology
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Yoshida, Takehiro
Sciocs Company Limited-
May 01, 2019 // 2:30pm – 2:50pm
10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching
Hiroshi Ohta, Osaka UniversityNaomi Asai, Hosei UniversityTakehiro Yoshida, Sciocs Company LimitedTomoyoshi Mishima, Osaka University
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Yu, Chia-Jui
National Tsing Hua University-
May 02, 2019 // 3:40pm – 4:30pm
18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width
Chia-Jui Yu, National Tsing Hua UniversityTz-Chau LinChien-Ju ChenJyun-Hao LiaoMeng-Chyi Wu, National Tsing Hua University, Hsinchu
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Yue, Duofeng
Qorvo, Inc.-
May 02, 2019 // 3:10pm – 3:30pm
16.6 Applications of Natural Exponential Functions in Semiconductor Processes
Xiaokang Huang, QorvoLinlin Chen, QorvoArif Choudhury, TriQuint Semiconductor, Inc.Duofeng Yue, Qorvo, Inc.Qidu Jiang, QorvoMengdi Mueller, QorvoJohn Griffin, QorvoVan Tran, QorvoAmit Kelkar, Qorvo
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Yuen, Al
Lumentum-
May 02, 2019 // 10:50am – 11:20am
14.2 Present Foundry Model for III-V Manufacturing
Al Yuen, Lumentum
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Zegaoui, Malek
IEMN-CNRS, Villeneuve d'Ascq-
May 01, 2019 // 2:00pm – 2:20pm
9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Riad Kabouche, IEMN-CNRS, Villeneuve d'AscqIdriss Abid, IEMN-CNRS, Villeneuve d'AscqMalek Zegaoui, IEMN-CNRS, Villeneuve d'AscqKai Cheng, Enkris Semiconductor, Inc.Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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Zeng, Joe
IQE PA-
May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE IR
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Zhang, Anbang
University of Electronic Science and Technology of China, Chengdu, China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Zhang, Baohui
NAURA Technology Group Co, Ltd.-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Zhang, Bo
University of Electronic Science and Technology of China-
May 02, 2019 // 3:40pm – 4:30pm
18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density
Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, ChinaChao Yang, University of Electronic Science and Technology of China, Chengdu, ChinaXiaorong Luo, University of Electronic Science and Technology of China, Chengdu, ChinaTao Sun, University of Electronic Science and Technology of China, Chengdu, ChinaDongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, ChinaSiyu Deng, University of Electronic Science and Technology of China, Chengdu, ChinaJie Wei, University of Electronic Science and Technology of China, Chengdu, ChinaBo Zhang, University of Electronic Science and Technology of China
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Zhang, Jianping
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Zhang, Lian
Institute of Semiconductor, Chinese Academy of Sciences, Beijing-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Zhang, Yuewei
Ohio State University, Columbus-
May 02, 2019 // 11:30am – 11:50am
15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs
Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of BristolYuewei Zhang, Ohio State University, ColumbusZhanbo Xia, Ohio State University, ColumbusSiddharth Rajan, The Ohio State University, Columbus
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Zhang, Yun
Institute of Semiconductors, Chinese Academy of Sciences, Beijing-
April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd.
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Ziari, Mehrdad
Infinera Corporation-
May 02, 2019 // 9:00am – 9:30am
13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits
Steve Stockton, Infinera CorporationFred Kish, Infinera CorporationSteve Maranowski, Infinera CorporationPeter Debackere, Infinera CorporationAdam James, Infinera CorporationAndrew Dentai, Infinera CorporationPaul Liu, Infinera CorporationPayam Abolghasem, Infinera CorporationNikhil Modi, Infinera CorporationBala Vaddepaty, Infinera CorporationPeter Evans, Infinera CorporationVikrant Lal, Infinera CorporationGloria Hoefler, Infinera CorporationJianping Zhang, Infinera CorporationMehrdad Ziari, Infinera Corporation
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Zook, John
EMD Performance Materials-
May 01, 2019 // 2:50pm – 3:10pm
10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications
Jonathan Fijal, Veeco InstrumentsKenji Nulman, Veeco InstrumentsAnil Vijayendran, Veeco InstrumentsDavid Rennie, EMD Performance MaterialsAlberto Dioses, EMD Performance MaterialsJohn Zook, EMD Performance MaterialsJohn Sagan, EMD Performance MaterialsShihu Deng, Ferrotec (USA) Corp.Laura Mauer, Ferrotec (USA) Corp.
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