• Abid, Idriss

    IEMN-CNRS, Villeneuve d'Ascq
    • May 01, 2019 // 2:00pm – 2:20pm

      9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

      Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
      Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
      Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
      Kai Cheng, Enkris Semiconductor, Inc.
      Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
      Download Paper
  • Abolghasem, Payam

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Ai, Yujie

    Institute of Semiconductors, Chinese Academy of Sciences
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
      Download Paper
  • Alcorn, Terry

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Alema, Fikadu

    Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    • May 02, 2019 // 3:40pm – 4:30pm

      18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system

      Nazar Orishchin, Agnitron Technology, Inc
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Download Paper
  • Allen, William

    MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
    • May 02, 2019 // 1:30pm – 1:50pm

      16.1 Yield Improvements in a High-Mix Fabrication Environment

      Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Download Paper
  • Allerman, Andrew

    Sandia National Laboratories
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Ansari, Azadeh

    Georgia Institute of Technology
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Arabhavi, Akshay

    ETH-Zurich
    • May 02, 2019 // 1:50pm – 2:10pm

      16.2 Effects of Electrochemical Etching on InP HEMT Fabrication

      Diego Ruiz, ETH-Zurich
      Anna Hambitzer, ETH-Zurich
      Akshay Arabhavi, ETH-Zurich
      Download Paper
  • Armstrong, Andrew

    Sandia National Laboratories
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Arnold, Jim

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Arturo, Marino

    The MAX Group
    • April 30, 2019 // 2:00pm – 2:20pm

      3.2 Fast Throughput Improvement Through Speed Modeling using Tool Matching and Process Optimization

      Marino Arturo, The MAX Group
      Download Paper
  • Asai, Naomi

    Hosei University
    • May 01, 2019 // 2:30pm – 2:50pm

      10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

      Hiroshi Ohta, Osaka University
      Naomi Asai, Hosei University
      Takehiro Yoshida, Sciocs Company Limited
      Tomoyoshi Mishima, Osaka University
      Download Paper
  • Baca, Albert

    Sandia National Laboratories
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Balram, Krishna

    University of Bristol
    • April 30, 2019 // 5:00pm – 5:20pm

      4.4 Monolithic integration of Surface Acoustic Wave (SAW) filters on GaN HEMT dies: Avoiding impedance matching through energy trapping

      Stefano Valle, University of Bristol
      Krishna Balram, University of Bristol
      Martin Cryan, University of Bristol
      Download Paper
  • Barner, Jeffrey

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Barnes, Andrew

    European Space Agency
    • April 08, 2019 // 11:00am – 12:00pm

      1.3 First ESA missions to use gallium nitride (GaN) – a disruptive technology for space based payloads

      Andrew Barnes, European Space Agency

      This paper gives an overview on the methodology and results obtained from performing early in-orbit demonstration and space qualification of microwave GaN technology for the European Space Agency PROBA V and Biomass missions.

      Download Paper
  • Bayruns, John

    Duet Micro Electronics, Inc.
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Bayruns, Robert

    Duet Micro Electronics, Inc.
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Behammer, Dag

    United Monolithic Semiconductors GmbH
    • April 30, 2019 // 4:20pm – 4:40pm

      5.3 Modelling of Backside-induced ESD Defects in GaAs Front End Manufacturing

      Markus Lanz, United Monolithic Semiconductors GmbH
      Dag Behammer, United Monolithic Semiconductors GmbH
      Holger Weiner, United Monolithic Semiconductors GmbH
      Download Paper
  • Behmenburg, H.

    AIXTRON SE, Herzogenrath
    • May 02, 2019 // 3:40pm – 4:30pm

      18.14 Buffer development for GaN power electronic applications using extrinsic carbon doping for a super-lattice structure

      M. Marx, AIXTRON SE, Herzogenrath
      H. Behmenburg, AIXTRON SE, Herzogenrath
      Download Paper
  • Benveniste, Dan

    Global Communciation Semiconductors, LLC
    • May 01, 2019 // 4:20pm – 4:40pm

      12.2 The State-of-Art of GaN/Diamond HEMT Manufacturing Technology And Device Performance

      Daniel Hou, Global Communication Semiconductors, LLC
      Dan Benveniste, Global Communciation Semiconductors, LLC
      Riccardo Soligo, Global Communciation Semiconductors, LLC
      Download Paper
  • Berkoh, Daniel

    Skyworks Solution Inc
    • May 02, 2019 // 2:10pm – 2:30pm

      16.3 Lift-off Challenges in using CAMP Negative Photoresist Patterning in III-V IC Fabrication

      Daniel Berkoh, Skyworks Solution Inc
      Download Paper
  • Best, Robbie

    Skyworks Solutions
    • May 02, 2019 // 2:30pm – 2:50pm

      16.4 Gross Die Per Wafer and Yield Optimization for GaAs ICs with Sub-Micron Features

      Robbie Best, Skyworks Solutions
      Download Paper
  • Blanck, Hervé

    United Monolithic Semiconductors
    • May 02, 2019 // 3:40pm – 4:30pm

      18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

      Sandra Riedmüller, United Monolithic Semiconductors GmbH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Manfred Madel, United Monolithic Semiconductors GmbH
      Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
      Hervé Blanck, United Monolithic Semiconductors
      Download Paper
  • Bonilla, Marco

    MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
    • May 02, 2019 // 1:30pm – 1:50pm

      16.1 Yield Improvements in a High-Mix Fabrication Environment

      Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Download Paper
  • Bothe, Kyle

    University of Alberta
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Bourgeois, Franck

    United Monolithic Semiconductors GmbH
    • April 30, 2019 // 4:00pm – 4:20pm

      5.2 A Systematic Data Mining Approach to separate Epitaxial Impacts from Process Impacts for GaAs pHEMT Technologies

      Franck Bourgeois, United Monolithic Semiconductors GmbH
      Peter Gretz, United Monolithic Semiconductors GmbH
      Download Paper
  • Brand, Joseph

    Duet Micro Electronics, Inc.
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Carey IV, Patrick

    University of Florida
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Carter, Andy

    Teledyne Scientific Company
    • May 01, 2019 // 11:40am – 12:10pm

      8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration

      Miguel Urteaga, Teledyne Scientific Company
      Andy Carter, Teledyne Scientific Company
      Sangki Hong, Nhanced Semiconductor
      Robert Patti, Nhanced Semiconductor
      Carl Petteway, Nhanced Semiconductor
      Gill Fountain, Nhanced Semiconductor
      Download Paper
  • Chandrasekar, Hareesh

    Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
    • May 02, 2019 // 10:30am – 10:50am

      15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Download Paper
  • Chang, Tsu-His

    HetInTec Corp.
    • April 30, 2019 // 3:40pm – 4:10pm

      4.1 Dynamic Range-enhanced Electronics and Materials

      Abirami Sivananthan, Booz Allen Hamilton
      Young-Kai Cheng, Defense Advanced Research Projects Agency
      Tsu-His Chang, HetInTec Corp.
      Download Paper
  • Chang, Yi-Sheng

    Chang Gung University
    • May 01, 2019 // 3:00pm – 3:20pm

      9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process

      Yi-Sheng Chang, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Download Paper
  • Chen, Chien-Ju

    • May 02, 2019 // 3:40pm – 4:30pm

      18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width

      Chia-Jui Yu, National Tsing Hua University
      Tz-Chau Lin
      Chien-Ju Chen
      Jyun-Hao Liao
      Meng-Chyi Wu, National Tsing Hua University, Hsinchu
      Download Paper
  • Chen, Linlin

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Cheng, Kai

    Enkris Semiconductor, Inc.
    • May 01, 2019 // 2:00pm – 2:20pm

      9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

      Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
      Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
      Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
      Kai Cheng, Enkris Semiconductor, Inc.
      Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
      Download Paper
  • Cheng, Kezia

    Skyworks Solutions Inc.
    • May 01, 2019 // 4:00pm – 4:20pm

      12.1 Elimination of Metal Fencing by Optimizing Evaporator Dome Alignment

      Kezia Cheng, Skyworks Solutions Inc.
      Download Paper
  • Cheng, Young-Kai

    Defense Advanced Research Projects Agency
    • April 30, 2019 // 3:40pm – 4:10pm

      4.1 Dynamic Range-enhanced Electronics and Materials

      Abirami Sivananthan, Booz Allen Hamilton
      Young-Kai Cheng, Defense Advanced Research Projects Agency
      Tsu-His Chang, HetInTec Corp.
      Download Paper
  • Cheng, Zhe

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
      Download Paper
  • CHENOT, Sébastien

    Université Côte d’Azur, CNRS, CRHEA
    • May 02, 2019 // 3:40pm – 4:30pm

      18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications

      Eric Guiot, SOITEC
      Olvier ledoux, SOITEC S.A
      david sotta, SOITEC S.A
      Amélie DUSSAIGNE, CEA-LETI, Univ. Grenoble Alpes
      Benjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEA
      Sébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
      Download Paper
  • Chou, Tung-Yao

    WIN Semiconductors Corp.
    • April 30, 2019 // 4:10pm – 4:30pm

      4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology

      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Choudhury, Arif

    TriQuint Semiconductor, Inc.
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Clark, Andrew

    IQE, Cardiff, UK
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Cryan, Martin

    University of Bristol
    • April 30, 2019 // 5:00pm – 5:20pm

      4.4 Monolithic integration of Surface Acoustic Wave (SAW) filters on GaN HEMT dies: Avoiding impedance matching through energy trapping

      Stefano Valle, University of Bristol
      Krishna Balram, University of Bristol
      Martin Cryan, University of Bristol
      Download Paper
  • Dalton, Ian

    MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
    • May 02, 2019 // 1:30pm – 1:50pm

      16.1 Yield Improvements in a High-Mix Fabrication Environment

      Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Download Paper
  • Daly, Aidan

    IQE PLC
    • May 02, 2019 // 11:20am – 11:50am

      14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers

      Ben Stevens, IQE PLC
      Adam Jandl, IQE PLC
      Aidan Daly, IQE PLC
      Andrew Joel, IQE, Cardiff, UK
      Download Paper
  • DAMILANO, Benjamin

    Université Côte d’Azur, CNRS, CRHEA
    • May 02, 2019 // 3:40pm – 4:30pm

      18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications

      Eric Guiot, SOITEC
      Olvier ledoux, SOITEC S.A
      david sotta, SOITEC S.A
      Amélie DUSSAIGNE, CEA-LETI, Univ. Grenoble Alpes
      Benjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEA
      Sébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
      Download Paper
  • Dargis, Rytis

    Translucent Inc.
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Debackere, Peter

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Debnath, Mukul

    IQE plc
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Deitrich, Tom

    Itron
    • April 30, 2019 // 8:30am – 12:00pm

      1.1 A Perspective on the Solutions and Needs of IoT, Utilities, and Smart Cities

      Tom Deitrich, Itron

      By almost any prediction the “Internet of Things” will connect many billions of devices to a global network in the coming decade. In the abstract, it is extremely difficult to understand the function and quantify the economics behind this trend. However, in the industrial networking space, the benefits to utilities and cities are already clearly driving economic and societal value. With applications such as distribution automation and distributed energy management, forward-thinking utilities are reducing operating costs, improving quality of service, and saving natural resources. Similarly, through streetlight automation and intelligent methane sensing, “smart cities” are harnessing the power of connectivity to create greener, safer, and more efficient communities with engaged citizens. This talk will review the benefits and challenges of smart utilities and cities, with a focus on the underlying technologies. The current role of compound semiconductors, such as GaAs, will be discussed, as well as a perspective around future innovation needs to enhance safety, security, and efficiency in the end applications.

      Download Paper
  • Deng, Shihu

    Ferrotec (USA) Corp.
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Deng, Siyu

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Dentai, Andrew

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Dindukurthi, Ganesh

    TRUMPF Photonics Inc
    • May 01, 2019 // 1:30pm – 2:00pm

      10.1 Process Optimization for Improved Adhesion of Ti/Pt/Au to SiN and GaAs

      Ganesh Dindukurthi, TRUMPF Photonics Inc
      Download Paper
  • Dioses, Alberto

    EMD Performance Materials
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • DOGMUS, Ezgi

    Yole Développement
    • April 30, 2019 // 2:50pm – 3:10pm

      2.4 5G impact on mobile RF Front End

      Ezgi DOGMUS, Yole Développement
      Download Paper
  • Dong, Boyu

    NAURA Technology Group Co., Ltd.
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
      Download Paper
  • Douglas, Erica

    Sandia National Laboratories
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • DUSSAIGNE, Amélie

    CEA-LETI, Univ. Grenoble Alpes
    • May 02, 2019 // 3:40pm – 4:30pm

      18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications

      Eric Guiot, SOITEC
      Olvier ledoux, SOITEC S.A
      david sotta, SOITEC S.A
      Amélie DUSSAIGNE, CEA-LETI, Univ. Grenoble Alpes
      Benjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEA
      Sébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
      Download Paper
  • Dvir, Gadi

    Strategy Implementation LLC
    • April 30, 2019 // 1:30pm – 2:00pm

      3.1 Complexity VS. Continuous Process Improvement

      Gadi Dvir, Strategy Implementation LLC
      Download Paper
  • Eddy, Charles

    US Naval Research Laboratory
    • May 02, 2019 // 3:10pm – 3:30pm

      17.5 Understanding GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices

      Charles Eddy, US Naval Research Laboratory
      Download Paper
  • Edwards, Stuart

    IQE Silicon
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • El-Helw, Sarah

    MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
    • May 02, 2019 // 1:30pm – 1:50pm

      16.1 Yield Improvements in a High-Mix Fabrication Environment

      Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Download Paper
  • Evans, Peter

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Fang, Xiao-Ming

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Fastenau, Joel

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Feigelson, Boris

    Naval Research Laboratory
    • May 01, 2019 // 5:20pm – 5:40pm

      12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications

      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Boris Feigelson, Naval Research Laboratory
      Download Paper
  • Feng, Qiong

    Institute of Semiconductors,Chinese Academy of Sciences
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
      Download Paper
  • Fetters, Matt

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Fijal, Jonathan

    Veeco Instruments
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Fisher, Jeremy

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Fountain, Gill

    Nhanced Semiconductor
    • May 01, 2019 // 11:40am – 12:10pm

      8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration

      Miguel Urteaga, Teledyne Scientific Company
      Andy Carter, Teledyne Scientific Company
      Sangki Hong, Nhanced Semiconductor
      Robert Patti, Nhanced Semiconductor
      Carl Petteway, Nhanced Semiconductor
      Gill Fountain, Nhanced Semiconductor
      Download Paper
  • Frey, Phil

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Fujita, Shizuo

    Kyoto University
    • May 02, 2019 // 1:30pm – 2:00pm

      17.1 P-type semiconductors in gallium oxide electronics

      Kentaro Kaneko, Kyoto University
      Shu Takemoto, Kyoto University
      Shin-ichi Kan, Kyoto University
      Takashi Shinohe, FLOSFIA INC.
      Shizuo Fujita, Kyoto University
      Download Paper
  • Furlong, Mark

    IQE IR
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Gajewski, Don

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Gajewski, Donald

    Wolfspeed, A Cree Company
    • May 01, 2019 // 5:10pm – 5:40pm

      11.4 JEDEC Guidelines and Standards for Compound Semiconductors

      Donald Gajewski, Wolfspeed, A Cree Company
      Download Paper
  • Gan, Kim

    BISTel America
    • April 30, 2019 // 2:20pm – 2:40pm

      3.3 Improving Root Cause Analysis Accuracy Using Advanced Trace Analytics

      Kim Gan, BISTel America
      Hein Lam, Global Foundries
      Download Paper
  • Ganguly, Satyaki

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Gao, Jennifer

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Gretz, Peter

    United Monolithic Semiconductors GmbH
    • April 30, 2019 // 4:00pm – 4:20pm

      5.2 A Systematic Data Mining Approach to separate Epitaxial Impacts from Process Impacts for GaAs pHEMT Technologies

      Franck Bourgeois, United Monolithic Semiconductors GmbH
      Peter Gretz, United Monolithic Semiconductors GmbH
      Download Paper
  • Griffin, John

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Grünenpütt, Jan

    United Monolithic Semiconductors France
    • May 02, 2019 // 3:40pm – 4:30pm

      18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

      Sandra Riedmüller, United Monolithic Semiconductors GmbH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Manfred Madel, United Monolithic Semiconductors GmbH
      Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
      Hervé Blanck, United Monolithic Semiconductors
      Download Paper
  • Gucmann, Filip

    Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
    • May 01, 2019 // 4:30pm – 4:50pm

      11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.

      Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Andrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
      Download Paper
  • Guiot, Eric

    SOITEC
    • May 02, 2019 // 3:40pm – 4:30pm

      18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications

      Eric Guiot, SOITEC
      Olvier ledoux, SOITEC S.A
      david sotta, SOITEC S.A
      Amélie DUSSAIGNE, CEA-LETI, Univ. Grenoble Alpes
      Benjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEA
      Sébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
      Download Paper
  • Gupta, Aditya

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Hambitzer, Anna

    ETH-Zurich
    • May 02, 2019 // 1:50pm – 2:10pm

      16.2 Effects of Electrochemical Etching on InP HEMT Fabrication

      Diego Ruiz, ETH-Zurich
      Anna Hambitzer, ETH-Zurich
      Akshay Arabhavi, ETH-Zurich
      Download Paper
  • Hardiman, Chris

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Henry, H. George

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Higham, Eric

    Strategy Analytics
    • April 30, 2019 // 2:00pm – 2:30pm

      2.2 How Will 5G Influence the RF Compound Semiconductor Industry?

      Eric Higham, Strategy Analytics
      Download Paper
  • Ho, Vinh

    Skyworks Solutions Inc.
    • April 30, 2019 // 5:00pm – 5:20pm

      5.5 Gold Electroplating Optimization in Diffusion-Limited Regime

      Vinh Ho, Skyworks Solutions Inc.
      Download Paper
  • Hoefler, Gloria

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Hong, Sangki

    Nhanced Semiconductor
    • May 01, 2019 // 11:40am – 12:10pm

      8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration

      Miguel Urteaga, Teledyne Scientific Company
      Andy Carter, Teledyne Scientific Company
      Sangki Hong, Nhanced Semiconductor
      Robert Patti, Nhanced Semiconductor
      Carl Petteway, Nhanced Semiconductor
      Gill Fountain, Nhanced Semiconductor
      Download Paper
  • Hou, Daniel

    Global Communication Semiconductors, LLC
    • May 01, 2019 // 4:20pm – 4:40pm

      12.2 The State-of-Art of GaN/Diamond HEMT Manufacturing Technology And Device Performance

      Daniel Hou, Global Communication Semiconductors, LLC
      Dan Benveniste, Global Communciation Semiconductors, LLC
      Riccardo Soligo, Global Communciation Semiconductors, LLC
      Download Paper
  • Hu, Chih-Wei

    Technology Development Division, Episil-Precision Inc, Taiwan
    • May 01, 2019 // 3:00pm – 3:20pm

      9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process

      Yi-Sheng Chang, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Download Paper
  • Huang, Sung-Wen

    National Chiao-Tung University
    • May 02, 2019 // 3:40pm – 4:30pm

      18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates

      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Hao-Chung Kuo, National Chiao-Tung University
      Sung-Wen Huang, National Chiao-Tung University
      Xinke Liu, N/A
      Download Paper
  • Huang, Xiaokang

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Hughes, Gary

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Ismail, Fawad

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 2:50pm – 3:10pm

      17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations

      Fawad Ismail, University of Illinois at Urbana-Champaign
      Kyekyoon Kim, University of Illinois at Urbana-Champaign
      Matthew Landi, University of Illinois at Urbana-Champaign
      Download Paper
  • Jacobs, Alan

    U.S. Naval Research Laboratory, Washington DC
    • May 01, 2019 // 5:20pm – 5:40pm

      12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications

      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Boris Feigelson, Naval Research Laboratory
      Download Paper
  • James, Adam

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Jandl, Adam

    IQE PLC
    • May 02, 2019 // 11:20am – 11:50am

      14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers

      Ben Stevens, IQE PLC
      Adam Jandl, IQE PLC
      Aidan Daly, IQE PLC
      Andrew Joel, IQE, Cardiff, UK
      Download Paper
  • Janis, Brittany

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Jia, Lifang

    Institute of Semiconductors, Chinese Academy of Sciences
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
      Download Paper
  • Jiang, Qidu

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Jin, Jinman

    Wavice Inc.
    • May 01, 2019 // 11:20am – 11:40am

      8.3 GaN quasi-MMIC HPAs with IPDs on HRS using via first TSV process

      Jinman Jin, Wavice Inc.
      Download Paper
  • Joel, Andrew

    IQE, Cardiff, UK
    • May 02, 2019 // 11:20am – 11:50am

      14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers

      Ben Stevens, IQE PLC
      Adam Jandl, IQE PLC
      Aidan Daly, IQE PLC
      Andrew Joel, IQE, Cardiff, UK
      Download Paper
  • Jones, Evan

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Kabouche, Riad

    IEMN-CNRS, Villeneuve d'Ascq
    • May 01, 2019 // 2:00pm – 2:20pm

      9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

      Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
      Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
      Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
      Kai Cheng, Enkris Semiconductor, Inc.
      Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
      Download Paper
  • Kan, Shin-ichi

    Kyoto University
    • May 02, 2019 // 1:30pm – 2:00pm

      17.1 P-type semiconductors in gallium oxide electronics

      Kentaro Kaneko, Kyoto University
      Shu Takemoto, Kyoto University
      Shin-ichi Kan, Kyoto University
      Takashi Shinohe, FLOSFIA INC.
      Shizuo Fujita, Kyoto University
      Download Paper
  • Kaneko, Kentaro

    Kyoto University
    • May 02, 2019 // 1:30pm – 2:00pm

      17.1 P-type semiconductors in gallium oxide electronics

      Kentaro Kaneko, Kyoto University
      Shu Takemoto, Kyoto University
      Shin-ichi Kan, Kyoto University
      Takashi Shinohe, FLOSFIA INC.
      Shizuo Fujita, Kyoto University
      Download Paper
  • Kapedia, Rehan

    University of Southern California
    • May 02, 2019 // 3:40pm – 4:30pm

      18.3 Templated Liquid Phase Growth Combined with MOCVD for Growth of Crystalline III-V’s Directly on Oxide and Nitride Surfaces

      Debarghya Sarkar, University of Southern California
      Rehan Kapedia, University of Southern California
      Download Paper
  • Kaplar, Robert

    Sandia National Labs, Albuquerque, NM
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Karboyan, Serge

    Nexperia. Manchester, UK
    • May 02, 2019 // 10:30am – 10:50am

      15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Download Paper
  • Kattner, Mike

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Kawano, Yoichi

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • May 01, 2019 // 3:10pm – 3:30pm

      10.5 Backside Processing of RF GaN-on-GaN HEMTs Considering Thermal Management

      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kawano, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Kelkar, Amit

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Kelly, Frank

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 3:40pm – 4:30pm

      18.11 Development of GaN Vertical High-Power Devices Enabled by Plasma-Assisted Molecular Beam Epitaxy

      Frank Kelly, University of Illinois at Urbana-Champaign
      Riley Vesto, University of Illinois at Urbana-Champaign
      Download Paper
  • Kim, DeaGyu

    Georgia Institute of Technology
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Kim, Kyekyoon

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 2:50pm – 3:10pm

      17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations

      Fawad Ismail, University of Illinois at Urbana-Champaign
      Kyekyoon Kim, University of Illinois at Urbana-Champaign
      Matthew Landi, University of Illinois at Urbana-Champaign
      Download Paper
  • Kish, Fred

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Klein, Brianna

    Sandia National Laboratories
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Kotani, Junji

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • May 01, 2019 // 3:10pm – 3:30pm

      10.5 Backside Processing of RF GaN-on-GaN HEMTs Considering Thermal Management

      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kawano, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Kotula, Paul

    Sandia National Laboratories
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Krysiak, Hubert

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Kuo, Hao-Chung

    National Chiao-Tung University
    • May 02, 2019 // 3:40pm – 4:30pm

      18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates

      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Hao-Chung Kuo, National Chiao-Tung University
      Sung-Wen Huang, National Chiao-Tung University
      Xinke Liu, N/A
      Download Paper
  • Lal, Vikrant

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Lam, Hein

    Global Foundries
    • April 30, 2019 // 2:20pm – 2:40pm

      3.3 Improving Root Cause Analysis Accuracy Using Advanced Trace Analytics

      Kim Gan, BISTel America
      Hein Lam, Global Foundries
      Download Paper
  • Lam, Wayne

    IHS Markit
    • April 30, 2019 // 10:00am – 11:00am

      1.2 Form follows function: mobile use-cases dictates electronic design, not the other way around

      Wayne Lam, IHS Markit

      The design paradigm for computing has historically been determined by the form factor of the core electronics. Ever since the mobile revolution, that design paradigm has been turned on its head. This talk will focus on the designs of mobile devices such as smartphones and wearables which are purpose built for a specific use-case as well as for the ergonomics of the user. Using teardowns conducted by IHS Markit, details of core electronic and physical designs are highlighted, and evolutions tracked from generation to generation. We will be exploring the 10 generations of Apple iPhones and 4 generations of the Apple Watches as core examples of how form follows function forcing innovative electronic designs to accommodate for this mobile design philosophy. The study is made possible by the IHS Markit teardown and cost benchmarking team over the course of the last 10+ years. The mobile products covered should serve as a good representation of how the semiconductor manufacturers are evolving their products to accommodate mobile design dictated by customer’s needs.

      Download Paper
  • Landi, Matthew

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 2:50pm – 3:10pm

      17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations

      Fawad Ismail, University of Illinois at Urbana-Champaign
      Kyekyoon Kim, University of Illinois at Urbana-Champaign
      Matthew Landi, University of Illinois at Urbana-Champaign
      Download Paper
  • Lanz, Markus

    United Monolithic Semiconductors GmbH
    • April 30, 2019 // 4:20pm – 4:40pm

      5.3 Modelling of Backside-induced ESD Defects in GaAs Front End Manufacturing

      Markus Lanz, United Monolithic Semiconductors GmbH
      Dag Behammer, United Monolithic Semiconductors GmbH
      Holger Weiner, United Monolithic Semiconductors GmbH
      Download Paper
  • Lawson, David

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • ledoux, Olvier

    SOITEC S.A
    • May 02, 2019 // 3:40pm – 4:30pm

      18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications

      Eric Guiot, SOITEC
      Olvier ledoux, SOITEC S.A
      david sotta, SOITEC S.A
      Amélie DUSSAIGNE, CEA-LETI, Univ. Grenoble Alpes
      Benjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEA
      Sébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
      Download Paper
  • Liao, Jyun-Hao

    • May 02, 2019 // 3:40pm – 4:30pm

      18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width

      Chia-Jui Yu, National Tsing Hua University
      Tz-Chau Lin
      Chien-Ju Chen
      Jyun-Hao Liao
      Meng-Chyi Wu, National Tsing Hua University, Hsinchu
      Download Paper
  • Lin, Tz-Chau

    • May 02, 2019 // 3:40pm – 4:30pm

      18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width

      Chia-Jui Yu, National Tsing Hua University
      Tz-Chau Lin
      Chien-Ju Chen
      Jyun-Hao Liao
      Meng-Chyi Wu, National Tsing Hua University, Hsinchu
      Download Paper
  • Liu, Amy

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Liu, Paul

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Liu, Xinke

    N/A
    • May 02, 2019 // 3:40pm – 4:30pm

      18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates

      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Hao-Chung Kuo, National Chiao-Tung University
      Sung-Wen Huang, National Chiao-Tung University
      Xinke Liu, N/A
      Download Paper
  • Long, Cainan

    University of Bristol
    • May 02, 2019 // 11:10am – 11:30am

      15.3 Interfacial mechanical stability and thermal resistance of GaN-on-diamond

      Cainan Long, University of Bristol
      Download Paper
  • Long, Rathnait

    MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
    • May 02, 2019 // 1:30pm – 1:50pm

      16.1 Yield Improvements in a High-Mix Fabrication Environment

      Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Download Paper
  • Lubyshev, Dmitri

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Lum, Earl

    EJL Wireless Research LLC
    • April 30, 2019 // 1:30pm – 2:00pm

      2.1 5G Implications for the Compound Semiconductor Industry

      Earl Lum, EJL Wireless Research LLC
      Download Paper
  • Luo, Xiaorong

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Madel, Manfred

    United Monolithic Semiconductors GmbH
    • May 02, 2019 // 3:40pm – 4:30pm

      18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

      Sandra Riedmüller, United Monolithic Semiconductors GmbH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Manfred Madel, United Monolithic Semiconductors GmbH
      Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
      Hervé Blanck, United Monolithic Semiconductors
      Download Paper
  • Maranowski, Steve

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Martin, Trevor

    IQE Europe, St Mellons, Cardiff, UK
    • May 02, 2019 // 10:30am – 10:50am

      15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Download Paper
  • Marx, M.

    AIXTRON SE, Herzogenrath
    • May 02, 2019 // 3:40pm – 4:30pm

      18.14 Buffer development for GaN power electronic applications using extrinsic carbon doping for a super-lattice structure

      M. Marx, AIXTRON SE, Herzogenrath
      H. Behmenburg, AIXTRON SE, Herzogenrath
      Download Paper
  • Mason, John

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Mattera Jr., Dr. Vincent

    II-VI, Incorporated
    • May 02, 2019 // 8:00am – 9:00am

      13.1 VCSELs at a Glance

      Dr. Vincent Mattera Jr., II-VI, Incorporated
      Download Paper
  • Mauer, Laura

    Ferrotec (USA) Corp.
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Medjdoub, Farid

    IEMN-CNRS, Villeneuve d'Ascq
    • May 01, 2019 // 2:00pm – 2:20pm

      9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

      Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
      Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
      Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
      Kai Cheng, Enkris Semiconductor, Inc.
      Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
      Download Paper
  • Milligan, Jim

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Mishima, Tomoyoshi

    Osaka University
    • May 01, 2019 // 2:30pm – 2:50pm

      10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

      Hiroshi Ohta, Osaka University
      Naomi Asai, Hosei University
      Takehiro Yoshida, Sciocs Company Limited
      Tomoyoshi Mishima, Osaka University
      Download Paper
  • Modi, Nikhil

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Moens, Peter

    ON Semiconductor, Corp. R&D
    • May 01, 2019 // 1:30pm – 2:00pm

      9.1 AlGaN/GaN Power Devices in a Si World : From R&D to Manufacturing and Reliability

      Peter Moens, ON Semiconductor, Corp. R&D
      Download Paper
  • Mohata, Dheeraj

    Global Communication Semiconductors, LLC
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Morgan, Aled

    IQE Silicon
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Morishita, Tomonori

    Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
    • May 02, 2019 // 11:50am – 12:20pm

      14.4 Crystal growth and wafer processing of 6″ GaAs substrate for Lasers

      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Download Paper
  • Moule, Taylor

    Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol
    • May 02, 2019 // 11:30am – 11:50am

      15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs

      Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol
      Yuewei Zhang, Ohio State University, Columbus
      Zhanbo Xia, Ohio State University, Columbus
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper
  • Mueller, Mengdi

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Namishia, Dan

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Nelson, Scott

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Nulman, Kenji

    Veeco Instruments
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Odnoblyudov, Vladimir

    QROMIS, USA
    • May 01, 2019 // 2:20pm – 2:40pm

      9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates

      Marko Tadjer, U.S. Naval Research Laboratory
      Vladimir Odnoblyudov, QROMIS, USA
      Download Paper
  • Ohta, Hiroshi

    Osaka University
    • May 01, 2019 // 2:30pm – 2:50pm

      10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

      Hiroshi Ohta, Osaka University
      Naomi Asai, Hosei University
      Takehiro Yoshida, Sciocs Company Limited
      Tomoyoshi Mishima, Osaka University
      Download Paper
  • Okamoto, Toru

    Toyoda Gosei Co., Ltd.
    • May 01, 2019 // 10:30am – 11:00am

      7.1 Advances in Vertical GaN Power Devices on GaN Substrates

      Toru Okamoto, Toyoda Gosei Co., Ltd.
      Download Paper
  • Orishchin, Nazar

    Agnitron Technology, Inc
    • May 02, 2019 // 3:40pm – 4:30pm

      18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system

      Nazar Orishchin, Agnitron Technology, Inc
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Download Paper
  • Osika, David

    Duet Micro Electronics, Inc.
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Osinsky, Andrei

    Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
    • May 02, 2019 // 3:40pm – 4:30pm

      18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system

      Nazar Orishchin, Agnitron Technology, Inc
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Download Paper
  • Ouyang, Dongfa

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Park, Minyo

    Georgia Institute of Technology
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Pastrone, Craig

    MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
    • May 02, 2019 // 1:30pm – 1:50pm

      16.1 Yield Improvements in a High-Mix Fabrication Environment

      Rathnait Long, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Sarah El-Helw, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Ian Dalton, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Marco Bonilla, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      William Allen, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Craig Pastrone, MACOM Technology Solutions, 100 Chelmsford Street, Lowell, MA 01851
      Download Paper
  • Patti, Robert

    Nhanced Semiconductor
    • May 01, 2019 // 11:40am – 12:10pm

      8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration

      Miguel Urteaga, Teledyne Scientific Company
      Andy Carter, Teledyne Scientific Company
      Sangki Hong, Nhanced Semiconductor
      Robert Patti, Nhanced Semiconductor
      Carl Petteway, Nhanced Semiconductor
      Gill Fountain, Nhanced Semiconductor
      Download Paper
  • Pearton, Stephen

    University of Florida
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Pelzel, Rodney

    IQE, Cardiff, UK
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Petteway, Carl

    Nhanced Semiconductor
    • May 01, 2019 // 11:40am – 12:10pm

      8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration

      Miguel Urteaga, Teledyne Scientific Company
      Andy Carter, Teledyne Scientific Company
      Sangki Hong, Nhanced Semiconductor
      Robert Patti, Nhanced Semiconductor
      Carl Petteway, Nhanced Semiconductor
      Gill Fountain, Nhanced Semiconductor
      Download Paper
  • Pomeroy, James

    University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
    • May 01, 2019 // 4:30pm – 4:50pm

      11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.

      Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Andrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
      Download Paper
  • Qiu, Junyi

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 3:40pm – 4:30pm

      18.10 Reconfigurable 43 Gb/s Optical Link Test Based Upon On-Wafer Probes of GaAs Photodetectors and VCSELs up to 85C

      Junyi Qiu, University of Illinois at Urbana-Champaign
      Download Paper
  • Radulescu, Fabian

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Rajan, Siddharth

    The Ohio State University, Columbus
    • May 02, 2019 // 11:30am – 11:50am

      15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs

      Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol
      Yuewei Zhang, Ohio State University, Columbus
      Zhanbo Xia, Ohio State University, Columbus
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper
  • Rasbot, Dave

    Global Communication Semiconductors, LLC
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Ren, Fan

    University of Florida
    • May 01, 2019 // 4:50pm – 5:10pm

      11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

      Patrick Carey IV, University of Florida
      Fan Ren, University of Florida
      Albert Baca, Sandia National Laboratories
      Brianna Klein, Sandia National Laboratories
      Andrew Allerman, Sandia National Laboratories
      Andrew Armstrong, Sandia National Laboratories
      Erica Douglas, Sandia National Laboratories
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      Paul Kotula, Sandia National Laboratories
      Stephen Pearton, University of Florida
      Download Paper
  • Rennie, David

    EMD Performance Materials
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Ridpath, Christopher

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Riedmüller, Sandra

    United Monolithic Semiconductors GmbH
    • May 02, 2019 // 3:40pm – 4:30pm

      18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

      Sandra Riedmüller, United Monolithic Semiconductors GmbH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Manfred Madel, United Monolithic Semiconductors GmbH
      Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
      Hervé Blanck, United Monolithic Semiconductors
      Download Paper
  • Riege, Jens

    Skyworks Solutions, Inc.
    • April 30, 2019 // 2:40pm – 3:10pm

      3.4 Implementation of Automated Process Dashboards

      Jens Riege, Skyworks Solutions, Inc.
      Download Paper
  • Ruiz, Diego

    ETH-Zurich
    • May 02, 2019 // 1:50pm – 2:10pm

      16.2 Effects of Electrochemical Etching on InP HEMT Fabrication

      Diego Ruiz, ETH-Zurich
      Anna Hambitzer, ETH-Zurich
      Akshay Arabhavi, ETH-Zurich
      Download Paper
  • Sagan, John

    EMD Performance Materials
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Sarkar, Debarghya

    University of Southern California
    • May 02, 2019 // 3:40pm – 4:30pm

      18.3 Templated Liquid Phase Growth Combined with MOCVD for Growth of Crystalline III-V’s Directly on Oxide and Nitride Surfaces

      Debarghya Sarkar, University of Southern California
      Rehan Kapedia, University of Southern California
      Download Paper
  • Sarker, Palash

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 3:40pm – 4:30pm

      18.4 GaN High-Performance Low-Leakage p-Islet MPS Diodes Enabled by PAMBE-Based Selective Area Growth

      Palash Sarker, University of Illinois at Urbana-Champaign
      Download Paper
  • Sarua, Andrei

    Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
    • May 01, 2019 // 4:30pm – 4:50pm

      11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.

      Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Andrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
      Download Paper
  • Schmukler, Bruce

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Scholz, Ferdinand

    Inst. Of Functional Nanosystems University of Ulm
    • May 02, 2019 // 3:40pm – 4:30pm

      18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

      Sandra Riedmüller, United Monolithic Semiconductors GmbH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Manfred Madel, United Monolithic Semiconductors GmbH
      Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
      Hervé Blanck, United Monolithic Semiconductors
      Download Paper
  • Shelton, Doug

    CANON USA INC.
    • May 02, 2019 // 2:50pm – 3:10pm

      16.5 Development of stepper solutions for new IoT device challenges

      Bunsuke Takeshita, CANON INC.
      Doug Shelton, CANON USA INC.
      Download Paper
  • Sheppard, Scott

    Wolfspeed | A Cree Company
    • May 01, 2019 // 4:40pm – 5:00pm

      12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

      Kyle Bothe, University of Alberta
      Terry Alcorn, Wolfspeed | A Cree Company
      Jennifer Gao, Wolfspeed | A Cree Company
      Chris Hardiman, Wolfspeed | A Cree Company
      Evan Jones, Wolfspeed | A Cree Company
      Dan Namishia, Wolfspeed | A Cree Company
      Fabian Radulescu, Wolfspeed | A Cree Company
      Satyaki Ganguly, Wolfspeed | A Cree Company
      Don Gajewski, Wolfspeed | A Cree Company
      Jeremy Fisher, Wolfspeed | A Cree Company
      Scott Sheppard, Wolfspeed | A Cree Company
      Jeffrey Barner, Wolfspeed | A Cree Company
      Jim Milligan, Wolfspeed | A Cree Company
      Bruce Schmukler, Wolfspeed | A Cree Company
      Download Paper
  • Shin, Kai

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Shinohe, Takashi

    FLOSFIA INC.
    • May 02, 2019 // 1:30pm – 2:00pm

      17.1 P-type semiconductors in gallium oxide electronics

      Kentaro Kaneko, Kyoto University
      Shu Takemoto, Kyoto University
      Shin-ichi Kan, Kyoto University
      Takashi Shinohe, FLOSFIA INC.
      Shizuo Fujita, Kyoto University
      Download Paper
  • Shiozaki, Koji

    Nagoya University
    • May 01, 2019 // 9:00am – 9:30am

      6.2 GaN-based Electrified Mobility for Sustainable Society

      Koji Shiozaki, Nagoya University
      Download Paper
  • Singh, Manikant

    University of Bristol
    • May 02, 2019 // 10:30am – 10:50am

      15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

      Manikant Singh, University of Bristol
      Serge Karboyan, Nexperia. Manchester, UK
      Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
      Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
      Download Paper
  • Sivananthan, Abirami

    Booz Allen Hamilton
    • April 30, 2019 // 3:40pm – 4:10pm

      4.1 Dynamic Range-enhanced Electronics and Materials

      Abirami Sivananthan, Booz Allen Hamilton
      Young-Kai Cheng, Defense Advanced Research Projects Agency
      Tsu-His Chang, HetInTec Corp.
      Download Paper
  • Snook, Megan

    Northrop Grumman Corporation
    • April 30, 2019 // 4:40pm – 5:00pm

      5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis

      Kai Shin, Northrop Grumman Corporation
      Brittany Janis, Northrop Grumman Corporation
      John Mason, Northrop Grumman Corporation
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Christopher Ridpath, Northrop Grumman Corporation
      Megan Snook, Northrop Grumman Corporation
      Aditya Gupta, Northrop Grumman Corporation
      H. George Henry, Northrop Grumman Corporation
      David Lawson, Northrop Grumman Corporation
      Jim Arnold, Northrop Grumman Corporation
      Download Paper
  • Soligo, Riccardo

    Global Communciation Semiconductors, LLC
    • May 01, 2019 // 4:20pm – 4:40pm

      12.2 The State-of-Art of GaN/Diamond HEMT Manufacturing Technology And Device Performance

      Daniel Hou, Global Communication Semiconductors, LLC
      Dan Benveniste, Global Communciation Semiconductors, LLC
      Riccardo Soligo, Global Communciation Semiconductors, LLC
      Download Paper
  • sotta, david

    SOITEC S.A
    • May 02, 2019 // 3:40pm – 4:30pm

      18.16 Innovative relaxed InGaN engineered substrates for red-green-blue µLEDs applications

      Eric Guiot, SOITEC
      Olvier ledoux, SOITEC S.A
      david sotta, SOITEC S.A
      Amélie DUSSAIGNE, CEA-LETI, Univ. Grenoble Alpes
      Benjamin DAMILANO, Université Côte d’Azur, CNRS, CRHEA
      Sébastien CHENOT, Université Côte d’Azur, CNRS, CRHEA
      Download Paper
  • Stevens, Ben

    IQE PLC
    • May 02, 2019 // 11:20am – 11:50am

      14.3 Volume Manufacture of 150 mm VCSEL Epi-wafers

      Ben Stevens, IQE PLC
      Adam Jandl, IQE PLC
      Aidan Daly, IQE PLC
      Andrew Joel, IQE, Cardiff, UK
      Download Paper
  • Stockton, Steve

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Sun, Tao

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Tadjer, Marko

    U.S. Naval Research Laboratory
    • May 01, 2019 // 2:20pm – 2:40pm

      9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates

      Marko Tadjer, U.S. Naval Research Laboratory
      Vladimir Odnoblyudov, QROMIS, USA
      Download Paper
  • Takemoto, Shu

    Kyoto University
    • May 02, 2019 // 1:30pm – 2:00pm

      17.1 P-type semiconductors in gallium oxide electronics

      Kentaro Kaneko, Kyoto University
      Shu Takemoto, Kyoto University
      Shin-ichi Kan, Kyoto University
      Takashi Shinohe, FLOSFIA INC.
      Shizuo Fujita, Kyoto University
      Download Paper
  • Takeshita, Bunsuke

    CANON INC.
    • May 02, 2019 // 2:50pm – 3:10pm

      16.5 Development of stepper solutions for new IoT device challenges

      Bunsuke Takeshita, CANON INC.
      Doug Shelton, CANON USA INC.
      Download Paper
  • Tischler, Joseph

    U.S. Naval Research Laboratory
    • May 01, 2019 // 5:00pm – 5:20pm

      12.4 3D Nanoprinting of Grayscale Features in GaN Devices to Reduce Peak Electric Fields

      Joseph Tischler, U.S. Naval Research Laboratory
      Download Paper
  • Tran, Van

    Qorvo
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Uemura, Keisuke

    Hokkaido University
    • May 01, 2019 // 2:00pm – 2:30pm

      10.2 Damage-less Wet Etching for Normally-off AlGaN/GaN HEMTs using Photo-electrochemical Reactions

      Keisuke Uemura, Hokkaido University
      Download Paper
  • Urteaga, Miguel

    Teledyne Scientific Company
    • May 01, 2019 // 11:40am – 12:10pm

      8.4 CMP Process Development on III-V Substrates for 3D Heterogeneous Integration

      Miguel Urteaga, Teledyne Scientific Company
      Andy Carter, Teledyne Scientific Company
      Sangki Hong, Nhanced Semiconductor
      Robert Patti, Nhanced Semiconductor
      Carl Petteway, Nhanced Semiconductor
      Gill Fountain, Nhanced Semiconductor
      Download Paper
  • Vaddepaty, Bala

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Valle, Stefano

    University of Bristol
    • April 30, 2019 // 5:00pm – 5:20pm

      4.4 Monolithic integration of Surface Acoustic Wave (SAW) filters on GaN HEMT dies: Avoiding impedance matching through energy trapping

      Stefano Valle, University of Bristol
      Krishna Balram, University of Bristol
      Martin Cryan, University of Bristol
      Download Paper
  • Veliadis, Victor

    PowerAmerica
    • May 01, 2019 // 11:00am – 11:30am

      7.2 Accelerating Commercialization of Wide-Bandgap Power Electronics – The Power America Manufacturing Initiative

      Victor Veliadis, PowerAmerica
      Download Paper
  • Vesto, Riley

    University of Illinois at Urbana-Champaign
    • May 02, 2019 // 3:40pm – 4:30pm

      18.11 Development of GaN Vertical High-Power Devices Enabled by Plasma-Assisted Molecular Beam Epitaxy

      Frank Kelly, University of Illinois at Urbana-Champaign
      Riley Vesto, University of Illinois at Urbana-Champaign
      Download Paper
  • Vijayendran, Anil

    Veeco Instruments
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
      Download Paper
  • Wang, David

    Global Communication Semiconductors, LLC
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Wang, Hao-Yu

    Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    • May 02, 2019 // 3:40pm – 4:30pm

      18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates

      Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
      Hao-Chung Kuo, National Chiao-Tung University
      Sung-Wen Huang, National Chiao-Tung University
      Xinke Liu, N/A
      Download Paper
  • Wang, Yu-Chi

    WIN Semiconductors Corp
    • April 30, 2019 // 4:10pm – 4:30pm

      4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology

      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Wei, Jie

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Weiner, Holger

    United Monolithic Semiconductors GmbH
    • April 30, 2019 // 4:20pm – 4:40pm

      5.3 Modelling of Backside-induced ESD Defects in GaAs Front End Manufacturing

      Markus Lanz, United Monolithic Semiconductors GmbH
      Dag Behammer, United Monolithic Semiconductors GmbH
      Holger Weiner, United Monolithic Semiconductors GmbH
      Download Paper
  • Williams, Dennis

    WIN Semiconductors Corp
    • April 30, 2019 // 4:10pm – 4:30pm

      4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology

      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Yu-Chi Wang, WIN Semiconductors Corp
      Download Paper
  • Wischmeyer, Frank

    AIXTRON SE
    • May 01, 2019 // 9:30am – 10:00am

      6.3 Epitaxy production technologies enabling next generation product roadmaps of wide band-gap semiconductor device industry

      Frank Wischmeyer, AIXTRON SE
      Download Paper
  • Wu, Meng-Chyi

    National Tsing Hua University, Hsinchu
    • May 02, 2019 // 3:40pm – 4:30pm

      18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width

      Chia-Jui Yu, National Tsing Hua University
      Tz-Chau Lin
      Chien-Ju Chen
      Jyun-Hao Liao
      Meng-Chyi Wu, National Tsing Hua University, Hsinchu
      Download Paper
  • Xia, Zhanbo

    Ohio State University, Columbus
    • May 02, 2019 // 11:30am – 11:50am

      15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs

      Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol
      Yuewei Zhang, Ohio State University, Columbus
      Zhanbo Xia, Ohio State University, Columbus
      Siddharth Rajan, The Ohio State University, Columbus
      Download Paper
  • Xuan, Rong

    Technology Development Division, Episil-Precision Inc, Taiwan
    • May 01, 2019 // 3:00pm – 3:20pm

      9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process

      Yi-Sheng Chang, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Download Paper
  • Yamada, Atsushi

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • May 01, 2019 // 3:10pm – 3:30pm

      10.5 Backside Processing of RF GaN-on-GaN HEMTs Considering Thermal Management

      Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Yoichi Kawano, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Yang, Chao

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Yang, Yuefei

    Global Communication Semiconductors, LLC
    • April 30, 2019 // 2:30pm – 2:50pm

      2.3 Development of InP DHBTs with high breakdown voltage for Ka band PA applications

      Dheeraj Mohata, Global Communication Semiconductors, LLC
      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      David Wang, Global Communication Semiconductors, LLC
      Robert Bayruns, Duet Micro Electronics, Inc.
      John Bayruns, Duet Micro Electronics, Inc.
      David Osika, Duet Micro Electronics, Inc.
      Joseph Brand, Duet Micro Electronics, Inc.
      Download Paper
  • Yanka, Robert

    IQE plc
    • April 30, 2019 // 4:30pm – 5:00pm

      4.3 Epitaxial material for RF filters

      Andrew Clark, IQE, Cardiff, UK
      Rytis Dargis, Translucent Inc.
      Mukul Debnath, IQE plc
      Robert Yanka, IQE plc
      Rodney Pelzel, IQE, Cardiff, UK
      Minyo Park, Georgia Institute of Technology
      DeaGyu Kim, Georgia Institute of Technology
      Azadeh Ansari, Georgia Institute of Technology
      Download Paper
  • Yoshida, Takehiro

    Sciocs Company Limited
    • May 01, 2019 // 2:30pm – 2:50pm

      10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

      Hiroshi Ohta, Osaka University
      Naomi Asai, Hosei University
      Takehiro Yoshida, Sciocs Company Limited
      Tomoyoshi Mishima, Osaka University
      Download Paper
  • Yu, Chia-Jui

    National Tsing Hua University
    • May 02, 2019 // 3:40pm – 4:30pm

      18.7 200 V – 20 A AlGaN-GaN MIS-HEMTs on Silicon Substrate with 60 mm Gate Width

      Chia-Jui Yu, National Tsing Hua University
      Tz-Chau Lin
      Chien-Ju Chen
      Jyun-Hao Liao
      Meng-Chyi Wu, National Tsing Hua University, Hsinchu
      Download Paper
  • Yue, Duofeng

    Qorvo, Inc.
    • May 02, 2019 // 3:10pm – 3:30pm

      16.6 Applications of Natural Exponential Functions in Semiconductor Processes

      Xiaokang Huang, Qorvo
      Linlin Chen, Qorvo
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Duofeng Yue, Qorvo, Inc.
      Qidu Jiang, Qorvo
      Mengdi Mueller, Qorvo
      John Griffin, Qorvo
      Van Tran, Qorvo
      Amit Kelkar, Qorvo
      Download Paper
  • Yuen, Al

    Lumentum
    • May 02, 2019 // 10:50am – 11:20am

      14.2 Present Foundry Model for III-V Manufacturing

      Al Yuen, Lumentum
      Download Paper
  • Zegaoui, Malek

    IEMN-CNRS, Villeneuve d'Ascq
    • May 01, 2019 // 2:00pm – 2:20pm

      9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

      Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
      Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
      Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
      Kai Cheng, Enkris Semiconductor, Inc.
      Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
      Download Paper
  • Zeng, Joe

    IQE PA
    • May 01, 2019 // 10:50am – 11:20am

      8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth

      Amy Liu, IQE PA
      Dmitri Lubyshev, IQE PA
      Joel Fastenau, IQE PA
      Matt Fetters, IQE PA
      Hubert Krysiak, IQE PA
      Joe Zeng, IQE PA
      Mike Kattner, IQE PA
      Phil Frey, IQE PA
      Scott Nelson, IQE PA
      Xiao-Ming Fang, IQE PA
      Aled Morgan, IQE Silicon
      Stuart Edwards, IQE Silicon
      Mark Furlong, IQE IR
  • Zhang, Anbang

    University of Electronic Science and Technology of China, Chengdu, China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Zhang, Baohui

    NAURA Technology Group Co, Ltd.
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
      Download Paper
  • Zhang, Bo

    University of Electronic Science and Technology of China
    • May 02, 2019 // 3:40pm – 4:30pm

      18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

      Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
      Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
      Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
      Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
      Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
      Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
      Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
      Bo Zhang, University of Electronic Science and Technology of China
      Download Paper
  • Zhang, Jianping

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
      Download Paper
  • Zhang, Lian

    Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
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  • Zhang, Yuewei

    Ohio State University, Columbus
    • May 02, 2019 // 11:30am – 11:50am

      15.4 Electrical and Thermal Characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs

      Taylor Moule, Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol
      Yuewei Zhang, Ohio State University, Columbus
      Zhanbo Xia, Ohio State University, Columbus
      Siddharth Rajan, The Ohio State University, Columbus
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  • Zhang, Yun

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    • April 30, 2019 // 5:20pm – 5:40pm

      4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

      Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
      Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
      Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
      Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
      Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
      Boyu Dong, NAURA Technology Group Co., Ltd.
      Baohui Zhang, NAURA Technology Group Co, Ltd.
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  • Ziari, Mehrdad

    Infinera Corporation
    • May 02, 2019 // 9:00am – 9:30am

      13.2 Volume Manufacturing of Highly Integrated System-On-Chip (SOC) InP-Based Photonic Integrated Circuits

      Steve Stockton, Infinera Corporation
      Fred Kish, Infinera Corporation
      Steve Maranowski, Infinera Corporation
      Peter Debackere, Infinera Corporation
      Adam James, Infinera Corporation
      Andrew Dentai, Infinera Corporation
      Paul Liu, Infinera Corporation
      Payam Abolghasem, Infinera Corporation
      Nikhil Modi, Infinera Corporation
      Bala Vaddepaty, Infinera Corporation
      Peter Evans, Infinera Corporation
      Vikrant Lal, Infinera Corporation
      Gloria Hoefler, Infinera Corporation
      Jianping Zhang, Infinera Corporation
      Mehrdad Ziari, Infinera Corporation
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  • Zook, John

    EMD Performance Materials
    • May 01, 2019 // 2:50pm – 3:10pm

      10.4 Development of Advanced Lift Off Processes for 5G and VCSEL Applications

      Jonathan Fijal, Veeco Instruments
      Kenji Nulman, Veeco Instruments
      Anil Vijayendran, Veeco Instruments
      David Rennie, EMD Performance Materials
      Alberto Dioses, EMD Performance Materials
      John Zook, EMD Performance Materials
      John Sagan, EMD Performance Materials
      Shihu Deng, Ferrotec (USA) Corp.
      Laura Mauer, Ferrotec (USA) Corp.
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