• Van de Casteele, Jerome

    United Monolithic Semiconductorss SAS
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Aktas, O.

    Qromis, Inc.
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Almeida, Carlos

    Semilab SDI
    • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

      M. Wilson, Semilab SDI
      David Greenock, X-Fab
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      Carlos Almeida, Semilab SDI
      John D’Amico, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
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    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • Armour, Eric

    Veeco Instruments – MOCVD
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Asubar, Joel T.

    University of Fukui
    • 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN

      Kai C. Herbert, Kwansei Gakuin University
      Kazuki Shibata, Kwansei Gakuin University
      Joel T. Asubar, University of Fukui
      Masaaki Kuzuhara, Kwansei Gakuin University
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  • Badeeb, L.

    Semilab ZRT
    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • Bakhtiary Noodeh, Marzieh

    Georgia Institute of Technology, Atlanta, GA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Barker, Anthony

    SPTS Technologies Ltd.
    • 9.2.2021 State-of-the-Art Etch and Deposition Processing of highly doped ScAlN for 5G and Wi-Fi Filter Applications

      Anthony Barker, SPTS Technologies Ltd.
      Kevin Riddell, SPTS, Newport, UK
      Alex Wood, SPTS Technologies Ltd.
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  • Basceri, C.

    Qromis, Inc.
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Ben-Slimane, Ahmed

    Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
    • 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?

      E. Dogmus, Yole Developpement, France
      P. Chiu, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Pars Mukish, Yole Developpement
      Pierrick Boulay, Yole Developpement
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    • 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

      P. Chiu, Yole Developpement, France
      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Cédric MALAQUIN, Yole Developpement
      Antoine Bonnabel, Yole Developpement
      C. Troadec, Yole Developpement, France
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  • Ben-Slimane, Ahmed

    Yole Developpement
    • 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19

      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Developpement
      P. Chiu, Yole Developpement, France
      C. Troadec, Yole Developpement, France
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  • Birkhahn, Ron

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Bisi, Davide

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Blanck, Hervé

    United Monolithic Semiconductors
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Bonnabel, Antoine

    Yole Developpement
    • 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

      P. Chiu, Yole Developpement, France
      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Cédric MALAQUIN, Yole Developpement
      Antoine Bonnabel, Yole Developpement
      C. Troadec, Yole Developpement, France
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  • Borga, M.

    imec
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Boulay, Pierrick

    Yole Developpement
    • 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?

      E. Dogmus, Yole Developpement, France
      P. Chiu, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Pars Mukish, Yole Developpement
      Pierrick Boulay, Yole Developpement
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  • Brooks, Daniel

    Air Force Research Laboratory
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Cao, L.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Chabak, Kelson

    Air Force Research Laboratory, Sensors Directorate
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Chang, T.-H.

    HetInTec Corp.
    • 1.1.2021 Next Revolution in Compound Semiconductor Materials

      Mark Rosker, Defense Advanced Research Projects Agency
      William D. Palmer, Defense Advanced Research Projects Agency
      T.-H. Chang, HetInTec Corp.
      Joseph J. Mauer, MBO Partners, Herndon, VA
      Justin Hodiak, MBO Partners, Herndon, VA
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  • Chen, , Yang-Hao

    WIN Semiconductors Corporation
    • 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal

      Jia-You Lo, WIN Semiconductors Corporation
      , Yang-Hao Chen, WIN Semiconductors Corporation
      Jui-Ping Chuang, WIN Semiconductors Corporation
      Chun-Jui Chiu, WIN Semiconductors Corporation
      Po-Chun Weng, WIN Semiconductors Corporation
      Kuo-Hua Chen, WIN Semiconductors Corporation
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  • Chen, Cheng-Yu

    IntelliEpi Inc.,
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Chen, Ding-Yuan

    SweGaN AB and Chalmers University of Technology
    • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

      Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
      Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
      Mattias Thorsell, Chalmers University of Technology
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Niklas Rorsman, Chalmers University of Technology
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  • Chen, Jr-Tai

    SweGaN AB
    • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

      Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
      Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
      Mattias Thorsell, Chalmers University of Technology
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Niklas Rorsman, Chalmers University of Technology
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    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Chen, Kuo-Hua

    WIN Semiconductors Corporation
    • 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal

      Jia-You Lo, WIN Semiconductors Corporation
      , Yang-Hao Chen, WIN Semiconductors Corporation
      Jui-Ping Chuang, WIN Semiconductors Corporation
      Chun-Jui Chiu, WIN Semiconductors Corporation
      Po-Chun Weng, WIN Semiconductors Corporation
      Kuo-Hua Chen, WIN Semiconductors Corporation
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  • Chen, L.

    2Ohio Aerospace Institute
    • 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs

      P. Neudeck, NASA Glenn Research Center
      D. Spry, NASA Glenn Research Center
      M. Krasowski, NASA Glenn Research Center
      L. Chen, 2Ohio Aerospace Institute
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  • Chen, Ming Chin

    Unikorn Semiconductor Corporation
    • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

      Ming Chin Chen, Unikorn Semiconductor Corporation
      Chia Cheng Liu, Unikorn Semiconductor Corporation
      Vladimir Odnoblyudov, Qromis, Inc.
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  • Chevtchenko, Serguei

    Ferdinand-Braun-Institut,
    • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

      Hossein Yazdani, Ferdinand-Braun-Institut,
      Serguei Chevtchenko, Ferdinand-Braun-Institut,
      Joachim Würfl, Ferdinand-Braun-Institut
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  • Chin, Tsung-Pei

    IntelliEpi Inc.
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Chiu, Chun-Jui

    WIN Semiconductors Corporation
    • 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal

      Jia-You Lo, WIN Semiconductors Corporation
      , Yang-Hao Chen, WIN Semiconductors Corporation
      Jui-Ping Chuang, WIN Semiconductors Corporation
      Chun-Jui Chiu, WIN Semiconductors Corporation
      Po-Chun Weng, WIN Semiconductors Corporation
      Kuo-Hua Chen, WIN Semiconductors Corporation
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  • Chiu, Hsien-Chin

    Chang Gung University
    • 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
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    • 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

      Hsiang Chun Wang, Chang Gung University,
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  • Chiu, P.

    Yole Developpement, France
    • 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?

      E. Dogmus, Yole Developpement, France
      P. Chiu, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Pars Mukish, Yole Developpement
      Pierrick Boulay, Yole Developpement
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    • 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

      P. Chiu, Yole Developpement, France
      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Cédric MALAQUIN, Yole Developpement
      Antoine Bonnabel, Yole Developpement
      C. Troadec, Yole Developpement, France
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    • 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19

      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Developpement
      P. Chiu, Yole Developpement, France
      C. Troadec, Yole Developpement, France
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  • Cho, Minkyu

    Georgia Institute of Technology, Atlanta, GA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Choi, Chulsoon

    Wavice Inc.,
    • 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications

      Sangmin Lee, Wavice Inc.,
      Byoungchul Jun, Wavice Inc.,
      Chulsoon Choi, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
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  • Chou, Shih-Kuei

    WIN Semiconductors Corp
    • 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification

      Shih-Kuei Chou, WIN Semiconductors Corp
      Yuan-Hsin Lin, WIN Semiconductors Corp
      Wen-Hsing Liao, WIN Semiconductors Corp
      Yu-Min Hsu, WIN Semiconductors Corp
      Chi-Hsiang Kuo, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
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  • Chuang, Jui-Ping

    WIN Semiconductors Corporation
    • 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal

      Jia-You Lo, WIN Semiconductors Corporation
      , Yang-Hao Chen, WIN Semiconductors Corporation
      Jui-Ping Chuang, WIN Semiconductors Corporation
      Chun-Jui Chiu, WIN Semiconductors Corporation
      Po-Chun Weng, WIN Semiconductors Corporation
      Kuo-Hua Chen, WIN Semiconductors Corporation
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  • Cingu, D.

    imec
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Cochran, Ian

    Veeco Instruments – Precision Surface Processing
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Coudriet, John

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Crespo, Antonio

    Air Force Research Laboratory, Sensors Directorate
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • D. Dupuis, Russell

    Georgia Institute of Technology, Atlanta, GA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • D'Amico, John

    Semilab SDI
    • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

      M. Wilson, Semilab SDI
      David Greenock, X-Fab
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      Carlos Almeida, Semilab SDI
      John D’Amico, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
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  • Daeumer, Matthias

    Lawrence Livermore National Laboratory, Livermore, CA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Dallesasse, John

    University of Illinois at Urbana-Chamapign
    • 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John Dallesasse, University of Illinois at Urbana-Chamapign
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  • Decoutere, S.

    imec
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Detchprohm, Theeradetch

    Georgia Institute of Technology
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Dogmus, E.

    Yole Developpement, France
    • 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19

      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Developpement
      P. Chiu, Yole Developpement, France
      C. Troadec, Yole Developpement, France
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    • 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?

      E. Dogmus, Yole Developpement, France
      P. Chiu, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Pars Mukish, Yole Developpement
      Pierrick Boulay, Yole Developpement
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    • 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

      P. Chiu, Yole Developpement, France
      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Cédric MALAQUIN, Yole Developpement
      Antoine Bonnabel, Yole Developpement
      C. Troadec, Yole Developpement, France
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  • Dryden, Daniel M.

    KBR
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Fahle, D.

    AIXTRON SE
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Faragó, A.

    Semilab ZRT
    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • Faria, Mario

    Tignis, Inc.
  • Fay, P.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Feng, Milton

    University of Illinois, Urbana-Champaign
    • 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors

      Dufei Wu, University of Illinois at Urbana Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Yu-Ting Peng, University of Illinois, Urbana-Champaign
      Milton Feng, University of Illinois, Urbana-Champaign
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  • Fijal, Jonathan

    Veeco Instruments – Precision Surface Processing
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Fitch Jr., Robert

    Air Force Research Laboratory
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Francis, Daniel

    Akash Systems, San Francisco, CA, USA
    • 2.1.2021 GaN-on-diamond design for manufacturing

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Kyle Graham, Akash Systems, San Francisco, CA, USA
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  • Gan, Kim Kok

    Bistel America Inc
  • Geens, K.

    imec,
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Gerchman, Y.

    Gal-El (MMIC)
    • 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication

      I. Toledo, Gal-El (MMIC)
      Y. Gerchman, Gal-El (MMIC)
      G. Lerner, Gal-El (MMIC)
      M. Vinokorov, Gal-El (MMIC)
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  • Gillespie, James

    Air Force Research Laboratory
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Graham, Kyle

    Akash Systems, San Francisco, CA, USA
    • 2.1.2021 GaN-on-diamond design for manufacturing

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Kyle Graham, Akash Systems, San Francisco, CA, USA
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  • Green, Andrew

    Air Force Research Laboratory, Sensors Directorate
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Greenock, David

    X-Fab
    • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

      M. Wilson, Semilab SDI
      David Greenock, X-Fab
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      Carlos Almeida, Semilab SDI
      John D’Amico, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
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  • Grünenpütt, Jan

    United Monolithic Semiconductors France
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Gupta, Geetak

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Hahn, H.

    AIXTRON SE
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Hansen, Ulli

    MSG Lithoglas GmbH
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Hara, N.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Harden, G.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Henderson, T.

    Qorvo
    • 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography

      C. Wang, Qorvo
      L. Huynh, Qorvo
      T. Henderson, Qorvo
      F. Pool, Qorvo
      B. Lindstedt, Qorvo
      C. Nevers, Qorvo
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  • Herbert, Kai C.

    Kwansei Gakuin University
    • 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN

      Kai C. Herbert, Kwansei Gakuin University
      Kazuki Shibata, Kwansei Gakuin University
      Joel T. Asubar, University of Fukui
      Masaaki Kuzuhara, Kwansei Gakuin University
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  • Herrault, Florian

    HRL Laboratories
    • 3.1.2021 Fabrication of High-Performance Compound Semiconductor RF Circuits Using Heterogeneously-Integrated Transistor Chiplets in Interposers

      Florian Herrault, HRL Laboratories
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  • Heuken, M.

    AIXTRON SE
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Hodiak, Justin

    MBO Partners, Herndon, VA
    • 1.1.2021 Next Revolution in Compound Semiconductor Materials

      Mark Rosker, Defense Advanced Research Projects Agency
      William D. Palmer, Defense Advanced Research Projects Agency
      T.-H. Chang, HetInTec Corp.
      Joseph J. Mauer, MBO Partners, Herndon, VA
      Justin Hodiak, MBO Partners, Herndon, VA
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  • Hoffman, A.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Hsiao, Fu-Chen

    University of Illinois at Urbana-Champaign
    • 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John Dallesasse, University of Illinois at Urbana-Chamapign
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  • Hsu, Yu-Min

    WIN Semiconductors Corp
    • 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification

      Shih-Kuei Chou, WIN Semiconductors Corp
      Yuan-Hsin Lin, WIN Semiconductors Corp
      Wen-Hsing Liao, WIN Semiconductors Corp
      Yu-Min Hsu, WIN Semiconductors Corp
      Chi-Hsiang Kuo, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
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  • Huynh, L.

    Qorvo
    • 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography

      C. Wang, Qorvo
      L. Huynh, Qorvo
      T. Henderson, Qorvo
      F. Pool, Qorvo
      B. Lindstedt, Qorvo
      C. Nevers, Qorvo
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  • Jun, Byoungchul

    Wavice Inc.,
    • 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications

      Sangmin Lee, Wavice Inc.,
      Byoungchul Jun, Wavice Inc.,
      Chulsoon Choi, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
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  • Jung, Hyeyoung

    Wavice Inc.,
    • 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications

      Sangmin Lee, Wavice Inc.,
      Byoungchul Jun, Wavice Inc.,
      Chulsoon Choi, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
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  • Kao, Yung-Chung

    IntelliEpi Inc.
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Kebede, Tina

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Keller, Stacia

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Kim, Jeehwan

    Massachusetts Institute of Technology,
  • Kim, Seullam

    IVWorks Co., Ltd.,
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Kordina, Olof

    SweGaN AB
    • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

      Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
      Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
      Mattias Thorsell, Chalmers University of Technology
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Niklas Rorsman, Chalmers University of Technology
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    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Kotani, J.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Kraman, Mark

    University of Illinois Urbana-Champagne
    • 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John Dallesasse, University of Illinois at Urbana-Chamapign
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  • Krasowski, M.

    NASA Glenn Research Center
    • 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs

      P. Neudeck, NASA Glenn Research Center
      D. Spry, NASA Glenn Research Center
      M. Krasowski, NASA Glenn Research Center
      L. Chen, 2Ohio Aerospace Institute
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  • Kumazaki, Y.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Kuo, Chi-Hsiang

    WIN Semiconductors Corp
    • 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification

      Shih-Kuei Chou, WIN Semiconductors Corp
      Yuan-Hsin Lin, WIN Semiconductors Corp
      Wen-Hsing Liao, WIN Semiconductors Corp
      Yu-Min Hsu, WIN Semiconductors Corp
      Chi-Hsiang Kuo, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
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  • Kurahash, N.

    Fujitsu Limited
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Kuzuhara, Masaaki

    Kwansei Gakuin University
    • 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN

      Kai C. Herbert, Kwansei Gakuin University
      Kazuki Shibata, Kwansei Gakuin University
      Joel T. Asubar, University of Fukui
      Masaaki Kuzuhara, Kwansei Gakuin University
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  • Lagowski, Jacek

    Semilab SDI, Tampa, FL,
    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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    • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

      M. Wilson, Semilab SDI
      David Greenock, X-Fab
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      Carlos Almeida, Semilab SDI
      John D’Amico, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
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  • Lambert, Benoît

    United Monolithic Semiconductors Germany
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Lee, Joe

    BISTel America
  • Lee, Sangmin

    Wavice Inc.,
    • 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications

      Sangmin Lee, Wavice Inc.,
      Byoungchul Jun, Wavice Inc.,
      Chulsoon Choi, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
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  • Lee, Soo Min

    Veeco Instruments – MOCVD
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Lerner, G.

    Gal-El (MMIC)
    • 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication

      I. Toledo, Gal-El (MMIC)
      Y. Gerchman, Gal-El (MMIC)
      G. Lerner, Gal-El (MMIC)
      M. Vinokorov, Gal-El (MMIC)
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  • Li, Wei

    IntelliEpi Inc.
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Liang, H.

    imec,
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Liang, Jianbo

    Osaka City University
    • 7.1.2021 Low-temperature direct wafer bonding innovating CS device technologies

      Naoteru Shigekawa, Osaka City University
      Jianbo Liang, Osaka City University
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  • Liao, Wen-Hsing

    WIN Semiconductors Corp
    • 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification

      Shih-Kuei Chou, WIN Semiconductors Corp
      Yuan-Hsin Lin, WIN Semiconductors Corp
      Wen-Hsing Liao, WIN Semiconductors Corp
      Yu-Min Hsu, WIN Semiconductors Corp
      Chi-Hsiang Kuo, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
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  • Liddy, Kyle

    Air Force Research Laboratory
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Lin, Che-Kai

    WIN Semiconductors Corporation
    • 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

      Wen-Hsin Wu, WIN Semiconductors Corporation
      Yong-Han Lin, WIN Semiconductors Corporation
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
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  • Lin, Cheng-Kuo

    WIN Semiconductors Corp
    • 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification

      Shih-Kuei Chou, WIN Semiconductors Corp
      Yuan-Hsin Lin, WIN Semiconductors Corp
      Wen-Hsing Liao, WIN Semiconductors Corp
      Yu-Min Hsu, WIN Semiconductors Corp
      Chi-Hsiang Kuo, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
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  • Lin, Yong-Han

    WIN Semiconductors Corporation
    • 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

      Wen-Hsin Wu, WIN Semiconductors Corporation
      Yong-Han Lin, WIN Semiconductors Corporation
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
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  • Lin, Yuan-Hsin

    WIN Semiconductors Corp
    • 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification

      Shih-Kuei Chou, WIN Semiconductors Corp
      Yuan-Hsin Lin, WIN Semiconductors Corp
      Wen-Hsing Liao, WIN Semiconductors Corp
      Yu-Min Hsu, WIN Semiconductors Corp
      Chi-Hsiang Kuo, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp
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  • Lindstedt, B.

    Qorvo
    • 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography

      C. Wang, Qorvo
      L. Huynh, Qorvo
      T. Henderson, Qorvo
      F. Pool, Qorvo
      B. Lindstedt, Qorvo
      C. Nevers, Qorvo
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  • Liu, Chia Cheng

    Unikorn Semiconductor Corporation
    • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

      Ming Chin Chen, Unikorn Semiconductor Corporation
      Chia Cheng Liu, Unikorn Semiconductor Corporation
      Vladimir Odnoblyudov, Qromis, Inc.
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  • Liu, Xiang

    Transphorm Inc.,
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Lo, Jia-You

    WIN Semiconductors Corporation
    • 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal

      Jia-You Lo, WIN Semiconductors Corporation
      , Yang-Hao Chen, WIN Semiconductors Corporation
      Jui-Ping Chuang, WIN Semiconductors Corporation
      Chun-Jui Chiu, WIN Semiconductors Corporation
      Po-Chun Weng, WIN Semiconductors Corporation
      Kuo-Hua Chen, WIN Semiconductors Corporation
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  • Looi, Kok Kheong

    MAX I.E.G. LLC
    • 7.4.2021 Harnessing the Capacity Model Simulator For a 200mm III-V Greenfield Fab Strategic Planning

      Kok Kheong Looi, MAX I.E.G. LLC
      Patrick See, MAX I.E.G. LLC
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  • Lowe, Frank

    Akash Systems, San Francisco, CA, USA
    • 2.1.2021 GaN-on-diamond design for manufacturing

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Frank Lowe, Akash Systems, San Francisco, CA, USA
      Kyle Graham, Akash Systems, San Francisco, CA, USA
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  • MALAQUIN, Cédric

    Yole Developpement
    • 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

      P. Chiu, Yole Developpement, France
      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Cédric MALAQUIN, Yole Developpement
      Antoine Bonnabel, Yole Developpement
      C. Troadec, Yole Developpement, France
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  • Marinskiy, Dmitriy

    Semilab SDI, Tampa, FL,
    • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

      M. Wilson, Semilab SDI
      David Greenock, X-Fab
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      Carlos Almeida, Semilab SDI
      John D’Amico, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
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    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • Marx, M.

    AIXTRON SE
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Mauer, Joseph J.

    MBO Partners, Herndon, VA
    • 1.1.2021 Next Revolution in Compound Semiconductor Materials

      Mark Rosker, Defense Advanced Research Projects Agency
      William D. Palmer, Defense Advanced Research Projects Agency
      T.-H. Chang, HetInTec Corp.
      Joseph J. Mauer, MBO Partners, Herndon, VA
      Justin Hodiak, MBO Partners, Herndon, VA
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  • Maus, Simon

    MSG Lithoglas GmbH
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Mazzalai, Dr. A.

    BU Semiconductor, Evatec AG, Trübbach (SG),
    • 9.3.2021 Developing production process for high performance piezoelectrics in MEMS applications

      Dr. A. Mazzalai, BU Semiconductor, Evatec AG, Trübbach (SG),
      Dr. X. Yao, BU Semiconductor, Evatec AG, Trübbach (SG),
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  • McCarthy, Lee

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Minoura, Y.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Mishra, Umesh

    Transphorm also Dean of Engineering UCSB
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Moereke, Janina

    United Monolithic Semiconductorss GmBH
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Moran, Jeff

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Morilon, April

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Mukish, Pars

    Yole Developpement
    • 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?

      E. Dogmus, Yole Developpement, France
      P. Chiu, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Pars Mukish, Yole Developpement
      Pierrick Boulay, Yole Developpement
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  • Neffati, Mehdy

    United Monolithic Semiconductorss SAS
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Neudeck, P.

    NASA Glenn Research Center
    • 4.3.2021 Processing Choices for Achieving Long Term IC Operation at 500° C

      D. Spry, NASA Glenn Research Center
      P. Neudeck, NASA Glenn Research Center
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    • 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs

      P. Neudeck, NASA Glenn Research Center
      D. Spry, NASA Glenn Research Center
      M. Krasowski, NASA Glenn Research Center
      L. Chen, 2Ohio Aerospace Institute
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  • Nevers, C.

    Qorvo
    • 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography

      C. Wang, Qorvo
      L. Huynh, Qorvo
      T. Henderson, Qorvo
      F. Pool, Qorvo
      B. Lindstedt, Qorvo
      C. Nevers, Qorvo
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  • Noh, Hong-Kyun

    VWorks Co., Ltd.,
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Noh, Young-Kyun

    IVWorks Co., Ltd.,
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Notarangelo, Christine

    Veeco Instruments – MOCVD
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Ochoa, Josh

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Odnoblyudov, V.

    Qromis, inc.
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Odnoblyudov, Vladimir

    Qromis, Inc.
    • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

      Ming Chin Chen, Unikorn Semiconductor Corporation
      Chia Cheng Liu, Unikorn Semiconductor Corporation
      Vladimir Odnoblyudov, Qromis, Inc.
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  • Ohki, T.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Okamoto, N.

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Oligschlaeger, R.

    AIXTRON SE
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Ozaki, S.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Palmer, William D.

    Defense Advanced Research Projects Agency
    • 1.1.2021 Next Revolution in Compound Semiconductor Materials

      Mark Rosker, Defense Advanced Research Projects Agency
      William D. Palmer, Defense Advanced Research Projects Agency
      T.-H. Chang, HetInTec Corp.
      Joseph J. Mauer, MBO Partners, Herndon, VA
      Justin Hodiak, MBO Partners, Herndon, VA
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  • Park, Byung-Guon

    IVWorks Co., Ltd.,
    • 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis

      Young-Kyun Noh, IVWorks Co., Ltd.,
      Hong-Kyun Noh, VWorks Co., Ltd.,
      Byung-Guon Park, IVWorks Co., Ltd.,
      Seullam Kim, IVWorks Co., Ltd.,
      Cheng-Yu Chen, IntelliEpi Inc.,
      Tsung-Pei Chin, IntelliEpi Inc.
      Wei Li, IntelliEpi Inc.
      Yung-Chung Kao, IntelliEpi Inc.
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  • Peng, Yu-Ting

    University of Illinois, Urbana-Champaign
    • 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors

      Dufei Wu, University of Illinois at Urbana Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Yu-Ting Peng, University of Illinois, Urbana-Champaign
      Milton Feng, University of Illinois, Urbana-Champaign
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  • Pikul, Kevin P.

    University of Illinois Urbana-Champagne
    • 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John Dallesasse, University of Illinois at Urbana-Chamapign
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  • Pool, F.

    Qorvo
    • 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography

      C. Wang, Qorvo
      L. Huynh, Qorvo
      T. Henderson, Qorvo
      F. Pool, Qorvo
      B. Lindstedt, Qorvo
      C. Nevers, Qorvo
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  • Porter, Matthew

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Reis, Kenneth P.

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Riddell, Kevin

    SPTS, Newport, UK
    • 9.2.2021 State-of-the-Art Etch and Deposition Processing of highly doped ScAlN for 5G and Wi-Fi Filter Applications

      Anthony Barker, SPTS Technologies Ltd.
      Kevin Riddell, SPTS, Newport, UK
      Alex Wood, SPTS Technologies Ltd.
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  • Riepe, Klaus

    United Monolithic Semiconductorss GmBH
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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  • Romanczyk, Brian

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Rorsman, Niklas

    Chalmers University of Technology
    • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

      Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
      Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
      Mattias Thorsell, Chalmers University of Technology
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Niklas Rorsman, Chalmers University of Technology
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  • Rosker, Mark

    Defense Advanced Research Projects Agency
    • 1.1.2021 Next Revolution in Compound Semiconductor Materials

      Mark Rosker, Defense Advanced Research Projects Agency
      William D. Palmer, Defense Advanced Research Projects Agency
      T.-H. Chang, HetInTec Corp.
      Joseph J. Mauer, MBO Partners, Herndon, VA
      Justin Hodiak, MBO Partners, Herndon, VA
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  • Sato, M.

    Fujitsu Limited
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Savtchouk, S.

    Semilab SDI,
    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • See, Patrick

    MAX I.E.G. LLC
    • 7.4.2021 Harnessing the Capacity Model Simulator For a 200mm III-V Greenfield Fab Strategic Planning

      Kok Kheong Looi, MAX I.E.G. LLC
      Patrick See, MAX I.E.G. LLC
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  • Shao, Qinghui

    2Lawrence Livermore National Laboratory, Livermore, CA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Shen, Shyh-Chiang

    Georgia Institute of Technology
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Shibata, Kazuki

    Kwansei Gakuin University
    • 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN

      Kai C. Herbert, Kwansei Gakuin University
      Kazuki Shibata, Kwansei Gakuin University
      Joel T. Asubar, University of Fukui
      Masaaki Kuzuhara, Kwansei Gakuin University
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  • Shigekawa, Naoteru

    Osaka City University
    • 7.1.2021 Low-temperature direct wafer bonding innovating CS device technologies

      Naoteru Shigekawa, Osaka City University
      Jianbo Liang, Osaka City University
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  • Sommer, Daniel

    United Monolithic Semiconductorss GmBH
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Splettstößer, Jörg

    United Monolithic Semiconductors – GmbH
    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Spry, D.

    NASA Glenn Research Center
    • 4.3.2021 Processing Choices for Achieving Long Term IC Operation at 500° C

      D. Spry, NASA Glenn Research Center
      P. Neudeck, NASA Glenn Research Center
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    • 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs

      P. Neudeck, NASA Glenn Research Center
      D. Spry, NASA Glenn Research Center
      M. Krasowski, NASA Glenn Research Center
      L. Chen, 2Ohio Aerospace Institute
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  • Stieglauer, Hermann

    United Monolithic Semiconductors Germany
    • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Klaus Riepe, United Monolithic Semiconductorss GmBH
      Janina Moereke, United Monolithic Semiconductorss GmBH
      Jan Grünenpütt, United Monolithic Semiconductors France
      Hervé Blanck, United Monolithic Semiconductors
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Benoît Lambert, United Monolithic Semiconductors Germany
      Jerome Van de Casteele, United Monolithic Semiconductorss SAS
      Mehdy Neffati, United Monolithic Semiconductorss SAS
      Ulli Hansen, MSG Lithoglas GmbH
      Simon Maus, MSG Lithoglas GmbH
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    • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

      Jan Grünenpütt, United Monolithic Semiconductors France
      Daniel Sommer, United Monolithic Semiconductorss GmBH
      Jörg Splettstößer, United Monolithic Semiconductors – GmbH
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Hermann Stieglauer, United Monolithic Semiconductors Germany
      Hervé Blanck, United Monolithic Semiconductors
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  • Su, Patrick

    University of Illinois at Urbana-Champaign
    • 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John Dallesasse, University of Illinois at Urbana-Chamapign
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  • Swenson, Brian

    Transphorm Inc.
    • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

      Xiang Liu, Transphorm Inc.,
      Brian Romanczyk, Transphorm Inc.
      Stacia Keller, Transphorm Inc.
      Brian Swenson, Transphorm Inc.
      Ron Birkhahn, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      Davide Bisi, Transphorm Inc.
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
      Lee McCarthy, Transphorm Inc.
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  • Taddei, John

    Veeco Instruments – Precision Surface Processing
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Takahashi, A.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Tarof, L.

    ELPHiC
  • Thorsell, Mattias

    Chalmers University of Technology
    • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

      Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
      Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
      Mattias Thorsell, Chalmers University of Technology
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Niklas Rorsman, Chalmers University of Technology
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  • Toledo, I.

    Gal-El (MMIC)
    • 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication

      I. Toledo, Gal-El (MMIC)
      Y. Gerchman, Gal-El (MMIC)
      G. Lerner, Gal-El (MMIC)
      M. Vinokorov, Gal-El (MMIC)
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  • Toth, S.

    Semilab ZRT
    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • Troadec, C.

    Yole Developpement, France
    • 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR

      P. Chiu, Yole Developpement, France
      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
      Cédric MALAQUIN, Yole Developpement
      Antoine Bonnabel, Yole Developpement
      C. Troadec, Yole Developpement, France
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    • 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19

      E. Dogmus, Yole Developpement, France
      Ahmed Ben-Slimane, Yole Developpement
      P. Chiu, Yole Developpement, France
      C. Troadec, Yole Developpement, France
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  • Tucker, Eric

    Veeco Instruments – MOCVD
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Tye, Lee

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Tyler, Phillip

    Veeco Instruments – Precision Surface Processing
    • 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

      Phillip Tyler, Veeco Instruments – Precision Surface Processing
      Jonathan Fijal, Veeco Instruments – Precision Surface Processing
      Ian Cochran, Veeco Instruments – Precision Surface Processing
      John Taddei, Veeco Instruments – Precision Surface Processing
      Eric Tucker, Veeco Instruments – MOCVD
      Soo Min Lee, Veeco Instruments – MOCVD
      Eric Armour, Veeco Instruments – MOCVD
      Christine Notarangelo, Veeco Instruments – MOCVD
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  • Villareal, Gabe

    BISTel America
  • Vinokorov, M.

    Gal-El (MMIC)
    • 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication

      I. Toledo, Gal-El (MMIC)
      Y. Gerchman, Gal-El (MMIC)
      G. Lerner, Gal-El (MMIC)
      M. Vinokorov, Gal-El (MMIC)
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  • Walker, Jesse

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Walker Jr., Dennis

    Air Force Research Laboratory
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Wang, J.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Wang, C.

    Qorvo
    • 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography

      C. Wang, Qorvo
      L. Huynh, Qorvo
      T. Henderson, Qorvo
      F. Pool, Qorvo
      B. Lindstedt, Qorvo
      C. Nevers, Qorvo
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  • Wang, Hsiang Chun

    Chang Gung University,
  • Wang, Hsiang-Chun

    Chang Gung University
    • 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
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    • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

      Ming Chin Chen, Unikorn Semiconductor Corporation
      Chia Cheng Liu, Unikorn Semiconductor Corporation
      Vladimir Odnoblyudov, Qromis, Inc.
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  • Wang, Wei-Chou

    WIN Semiconductors Corporation
    • 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

      Wen-Hsin Wu, WIN Semiconductors Corporation
      Yong-Han Lin, WIN Semiconductors Corporation
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
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  • Watanabe, K.

    Fujitsu Limited and Fujitsu Laboratories Ltd
    • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

      N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
      Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
      J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
      T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
      N. Kurahash, Fujitsu Limited
      M. Sato, Fujitsu Limited
      N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
      K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • Welch, Michael Thomas

    MAX I.E.G. LLC
  • Wen, Kai-Hsin

    SweGaN AB and Chalmers University of Technology
    • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

      Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
      Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
      Mattias Thorsell, Chalmers University of Technology
      Olof Kordina, SweGaN AB
      Jr-Tai Chen, SweGaN AB
      Niklas Rorsman, Chalmers University of Technology
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  • Weng, Chang'e

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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  • Weng, Po-Chun

    WIN Semiconductors Corporation
    • 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal

      Jia-You Lo, WIN Semiconductors Corporation
      , Yang-Hao Chen, WIN Semiconductors Corporation
      Jui-Ping Chuang, WIN Semiconductors Corporation
      Chun-Jui Chiu, WIN Semiconductors Corporation
      Po-Chun Weng, WIN Semiconductors Corporation
      Kuo-Hua Chen, WIN Semiconductors Corporation
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  • Werner, Elizabeth

    KBR
    • 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

      Elizabeth Werner, KBR
      Daniel Brooks, Air Force Research Laboratory
      Kyle Liddy, Air Force Research Laboratory
      Robert Fitch Jr., Air Force Research Laboratory
      James Gillespie, Air Force Research Laboratory
      Dennis Walker Jr., Air Force Research Laboratory
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Daniel M. Dryden, KBR
      Andrew Green, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
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  • Wilson, M.

    Semilab SDI
    • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

      M. Wilson, Semilab SDI
      David Greenock, X-Fab
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      Carlos Almeida, Semilab SDI
      John D’Amico, Semilab SDI
      Jacek Lagowski, Semilab SDI, Tampa, FL,
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    • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      M. Wilson, Semilab SDI
      Carlos Almeida, Semilab SDI
      S. Savtchouk, Semilab SDI,
      Jacek Lagowski, Semilab SDI, Tampa, FL,
      S. Toth, Semilab ZRT
      L. Badeeb, Semilab ZRT
      A. Faragó, Semilab ZRT
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  • Wood, Alex

    SPTS Technologies Ltd.
    • 9.2.2021 State-of-the-Art Etch and Deposition Processing of highly doped ScAlN for 5G and Wi-Fi Filter Applications

      Anthony Barker, SPTS Technologies Ltd.
      Kevin Riddell, SPTS, Newport, UK
      Alex Wood, SPTS Technologies Ltd.
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  • Wu, Dufei

    University of Illinois at Urbana Champaign
    • 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors

      Dufei Wu, University of Illinois at Urbana Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Yu-Ting Peng, University of Illinois, Urbana-Champaign
      Milton Feng, University of Illinois, Urbana-Champaign
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  • Wu, Wen-Hsin

    WIN Semiconductors Corporation
    • 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

      Wen-Hsin Wu, WIN Semiconductors Corporation
      Yong-Han Lin, WIN Semiconductors Corporation
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
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  • Würfl, Joachim

    Ferdinand-Braun-Institut
    • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

      Hossein Yazdani, Ferdinand-Braun-Institut,
      Serguei Chevtchenko, Ferdinand-Braun-Institut,
      Joachim Würfl, Ferdinand-Braun-Institut
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  • Xu, Zhiyu

    Georgia Institute of Technology, Atlanta, GA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • Yao, Dr. X.

    BU Semiconductor, Evatec AG, Trübbach (SG),
    • 9.3.2021 Developing production process for high performance piezoelectrics in MEMS applications

      Dr. A. Mazzalai, BU Semiconductor, Evatec AG, Trübbach (SG),
      Dr. X. Yao, BU Semiconductor, Evatec AG, Trübbach (SG),
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  • Yazdani, Hossein

    Ferdinand-Braun-Institut,
    • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

      Hossein Yazdani, Ferdinand-Braun-Institut,
      Serguei Chevtchenko, Ferdinand-Braun-Institut,
      Joachim Würfl, Ferdinand-Braun-Institut
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  • Ye, H.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Yoo, Jae-Hyuck

    Lawrence Livermore National Laboratory, Livermore, CA
    • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

      Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
      Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
      Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
      Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
      Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
      Shyh-Chiang Shen, Georgia Institute of Technology
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  • You, S.

    imec
    • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

      K. Geens, imec,
      H. Hahn, AIXTRON SE
      H. Liang, imec,
      M. Borga, imec
      D. Cingu, imec
      S. You, imec
      M. Marx, AIXTRON SE
      R. Oligschlaeger, AIXTRON SE
      D. Fahle, AIXTRON SE
      M. Heuken, AIXTRON SE
      V. Odnoblyudov, Qromis, inc.
      O. Aktas, Qromis, Inc.
      C. Basceri, Qromis, Inc.
      S. Decoutere, imec
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  • Yu, Xin

    University of Illinois at Urbana-Champaign
    • 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors

      Dufei Wu, University of Illinois at Urbana Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Yu-Ting Peng, University of Illinois, Urbana-Champaign
      Milton Feng, University of Illinois, Urbana-Champaign
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  • Zhu, Z.

    University of Notre Dame
    • 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients

      L. Cao, University of Notre Dame
      Z. Zhu, University of Notre Dame
      G. Harden, University of Notre Dame
      H. Ye, University of Notre Dame
      J. Wang, University of Notre Dame
      A. Hoffman, University of Notre Dame
      P. Fay, University of Notre Dame
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  • Ziad, Hocine

    ON-Semiconductor
  • Zimmerman, Kris

    Qorvo
    • 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies

      Chang’e Weng, Qorvo
      Tina Kebede, Qorvo
      April Morilon, Qorvo
      Jesse Walker, Qorvo
      Kris Zimmerman, Qorvo
      Lee Tye, Qorvo
      John Coudriet, Qorvo
      Josh Ochoa, Qorvo
      Jeff Moran, Qorvo
      Matthew Porter, Qorvo
      Kenneth P. Reis, Qorvo
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