Van de Casteele, Jerome

United Monolithic Semiconductorss SAS
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Aktas, O.

Qromis, Inc.
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Almeida, Carlos

Semilab SDI
- 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
  
  M. Wilson, Semilab SDI
  
  David Greenock, X-Fab
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Carlos Almeida, Semilab SDI
  
  John D’Amico, Semilab SDI
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
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- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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Armour, Eric

Veeco Instruments – MOCVD
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Asubar, Joel T.

University of Fukui
- 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN
  
  Kai C. Herbert, Kwansei Gakuin University
  
  Kazuki Shibata, Kwansei Gakuin University
  
  Joel T. Asubar, University of Fukui
  
  Masaaki Kuzuhara, Kwansei Gakuin University
  
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Badeeb, L.

Semilab ZRT
- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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Bakhtiary Noodeh, Marzieh

Georgia Institute of Technology, Atlanta, GA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Barker, Anthony

SPTS Technologies Ltd.
- 9.2.2021 State-of-the-Art Etch and Deposition Processing of highly doped ScAlN for 5G and Wi-Fi Filter Applications
  
  Anthony Barker, SPTS Technologies Ltd.
  
  Kevin Riddell, SPTS, Newport, UK
  
  Alex Wood, SPTS Technologies Ltd.
  
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Basceri, C.

Qromis, Inc.
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Ben-Slimane, Ahmed

Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
- 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?
  
  E. Dogmus, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Pars Mukish, Yole Developpement
  
  Pierrick Boulay, Yole Developpement
  
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- 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Cédric MALAQUIN, Yole Developpement
  
  Antoine Bonnabel, Yole Developpement
  
  C. Troadec, Yole Developpement, France
  
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Ben-Slimane, Ahmed

Yole Developpement
- 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Developpement
  
  P. Chiu, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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Birkhahn, Ron

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Bisi, Davide

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Blanck, Hervé

United Monolithic Semiconductors
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Bonnabel, Antoine

Yole Developpement
- 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Cédric MALAQUIN, Yole Developpement
  
  Antoine Bonnabel, Yole Developpement
  
  C. Troadec, Yole Developpement, France
  
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Borga, M.

imec
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Boulay, Pierrick

Yole Developpement
- 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?
  
  E. Dogmus, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Pars Mukish, Yole Developpement
  
  Pierrick Boulay, Yole Developpement
  
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Brooks, Daniel

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Cao, L.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Chabak, Kelson

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Chang, T.-H.

HetInTec Corp.
- 1.1.2021 Next Revolution in Compound Semiconductor Materials
  
  Mark Rosker, Defense Advanced Research Projects Agency
  
  William D. Palmer, Defense Advanced Research Projects Agency
  
  T.-H. Chang, HetInTec Corp.
  
  Joseph J. Mauer, MBO Partners, Herndon, VA
  
  Justin Hodiak, MBO Partners, Herndon, VA
  
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Chen, , Yang-Hao

WIN Semiconductors Corporation
- 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal
  
  Jia-You Lo, WIN Semiconductors Corporation
  
  , Yang-Hao Chen, WIN Semiconductors Corporation
  
  Jui-Ping Chuang, WIN Semiconductors Corporation
  
  Chun-Jui Chiu, WIN Semiconductors Corporation
  
  Po-Chun Weng, WIN Semiconductors Corporation
  
  Kuo-Hua Chen, WIN Semiconductors Corporation
  
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Chen, Cheng-Yu

IntelliEpi Inc.,
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Chen, Ding-Yuan

SweGaN AB and Chalmers University of Technology
- 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
  
  Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
  
  Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
  
  Mattias Thorsell, Chalmers University of Technology
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Niklas Rorsman, Chalmers University of Technology
  
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Chen, Jr-Tai

SweGaN AB
- 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
  
  Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
  
  Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
  
  Mattias Thorsell, Chalmers University of Technology
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Niklas Rorsman, Chalmers University of Technology
  
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- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Chen, Kuo-Hua

WIN Semiconductors Corporation
- 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal
  
  Jia-You Lo, WIN Semiconductors Corporation
  
  , Yang-Hao Chen, WIN Semiconductors Corporation
  
  Jui-Ping Chuang, WIN Semiconductors Corporation
  
  Chun-Jui Chiu, WIN Semiconductors Corporation
  
  Po-Chun Weng, WIN Semiconductors Corporation
  
  Kuo-Hua Chen, WIN Semiconductors Corporation
  
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Chen, L.

2Ohio Aerospace Institute
- 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs
  
  P. Neudeck, NASA Glenn Research Center
  
  D. Spry, NASA Glenn Research Center
  
  M. Krasowski, NASA Glenn Research Center
  
  L. Chen, 2Ohio Aerospace Institute
  
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Chen, Ming Chin

Unikorn Semiconductor Corporation
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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Chevtchenko, Serguei

Ferdinand-Braun-Institut,
- 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer
  
  Hossein Yazdani, Ferdinand-Braun-Institut,
  
  Serguei Chevtchenko, Ferdinand-Braun-Institut,
  
  Ina Ostermay, Ferdinand-Braun-Institut
  
  Joachim Würfl, Ferdinand-Braun-Institut
  
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Chin, Tsung-Pei

IntelliEpi Inc.
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Chiu, Chun-Jui

WIN Semiconductors Corporation
- 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal
  
  Jia-You Lo, WIN Semiconductors Corporation
  
  , Yang-Hao Chen, WIN Semiconductors Corporation
  
  Jui-Ping Chuang, WIN Semiconductors Corporation
  
  Chun-Jui Chiu, WIN Semiconductors Corporation
  
  Po-Chun Weng, WIN Semiconductors Corporation
  
  Kuo-Hua Chen, WIN Semiconductors Corporation
  
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Chiu, Hsien-Chin

Chang Gung University
- 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
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Chiu, Hsien-Chin

Chang Gung University
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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Chiu, Hsien-Chin

Chang Gung University,
- 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer
  
  Chia-Hao Liu, Chang Gung University,
  
  Hsien-Chin Chiu, Chang Gung University,
  
  Hsiang Chun Wang, Chang Gung University,
  
  Hsuan Ling Kao, Chang Gung University
  
  Chong Rong Haung, Chang Gung University,
  
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Chiu, P.

Yole Developpement, France
- 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?
  
  E. Dogmus, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Pars Mukish, Yole Developpement
  
  Pierrick Boulay, Yole Developpement
  
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- 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Cédric MALAQUIN, Yole Developpement
  
  Antoine Bonnabel, Yole Developpement
  
  C. Troadec, Yole Developpement, France
  
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- 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Developpement
  
  P. Chiu, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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Cho, Minkyu

Georgia Institute of Technology, Atlanta, GA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Choi, Chulsoon

Wavice Inc.,
- 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications
  
  Sangmin Lee, Wavice Inc.,
  
  Byoungchul Jun, Wavice Inc.,
  
  Chulsoon Choi, Wavice Inc.,
  
  Hyeyoung Jung, Wavice Inc.,
  
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Chou, Shih-Kuei

WIN Semiconductors Corp
- 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification
  
  Shih-Kuei Chou, WIN Semiconductors Corp
  
  Yuan-Hsin Lin, WIN Semiconductors Corp
  
  Wen-Hsing Liao, WIN Semiconductors Corp
  
  Yu-Min Hsu, WIN Semiconductors Corp
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Chuang, Jui-Ping

WIN Semiconductors Corporation
- 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal
  
  Jia-You Lo, WIN Semiconductors Corporation
  
  , Yang-Hao Chen, WIN Semiconductors Corporation
  
  Jui-Ping Chuang, WIN Semiconductors Corporation
  
  Chun-Jui Chiu, WIN Semiconductors Corporation
  
  Po-Chun Weng, WIN Semiconductors Corporation
  
  Kuo-Hua Chen, WIN Semiconductors Corporation
  
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Cingu, D.

imec
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Cochran, Ian

Veeco Instruments – Precision Surface Processing
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Coudriet, John

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Crespo, Antonio

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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D. Dupuis, Russell

Georgia Institute of Technology, Atlanta, GA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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D'Amico, John

Semilab SDI
- 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
  
  M. Wilson, Semilab SDI
  
  David Greenock, X-Fab
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Carlos Almeida, Semilab SDI
  
  John D’Amico, Semilab SDI
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
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Daeumer, Matthias

Lawrence Livermore National Laboratory, Livermore, CA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Dallesasse, John

University of Illinois at Urbana-Chamapign
- 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
  
  John Dallesasse, University of Illinois at Urbana-Chamapign
  
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Decoutere, S.

imec
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Detchprohm, Theeradetch

Georgia Tech
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Dogmus, E.

Yole Developpement, France
- 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Developpement
  
  P. Chiu, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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- 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?
  
  E. Dogmus, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Pars Mukish, Yole Developpement
  
  Pierrick Boulay, Yole Developpement
  
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- 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Cédric MALAQUIN, Yole Developpement
  
  Antoine Bonnabel, Yole Developpement
  
  C. Troadec, Yole Developpement, France
  
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Dryden, Daniel M.

KBR
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Fahle, D.

AIXTRON SE
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Faragó, A.

Semilab ZRT
- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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Faria, Mario

The MAX Group
- 9.4.2021 Continual Improvement of Cumulative Yield in GaAs Wafer Fabrication
  
  Michael Thomas Welch, MAX I.E.G. LLC
  
  Mario Faria, The MAX Group
  
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Fay, P.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Feng, Milton

University of Illinois, Urbana-Champaign
- 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors
  
  Dufei Wu, University of Illinois at Urbana Champaign
  
  Xin Yu, University of Illinois at Urbana-Champaign
  
  Yu-Ting Peng, University of Illinois, Urbana-Champaign
  
  Milton Feng, University of Illinois, Urbana-Champaign
  
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Fijal, Jonathan

Veeco Instruments – Precision Surface Processing
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Fitch Jr., Robert

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Francis, Daniel

Akash Systems, San Francisco, CA, USA
- 2.1.2021 GaN-on-diamond design for manufacturing
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Frank Lowe, Akash Systems, San Francisco, CA, USA
  
  Kyle Graham, Akash Systems, San Francisco, CA, USA
  
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Gan, Kim Kok

Bistel America Inc
- 6.5.2021 Uncovering Process Interdependency Using Data Mining
  
  Kim Kok Gan, Bistel America Inc
  
  Gabe Villareal, BISTel America
  
  Joe Lee, BISTel America
  
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Geens, K.

imec,
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Gerchman, Y.

Gal-El (MMIC)
- 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication
  
  I. Toledo, Gal-El (MMIC)
  
  Y. Gerchman, Gal-El (MMIC)
  
  G. Lerner, Gal-El (MMIC)
  
  M. Vinokorov, Gal-El (MMIC)
  
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Gillespie, James

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Graham, Kyle

Akash Systems, San Francisco, CA, USA
- 2.1.2021 GaN-on-diamond design for manufacturing
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Frank Lowe, Akash Systems, San Francisco, CA, USA
  
  Kyle Graham, Akash Systems, San Francisco, CA, USA
  
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Green, Andrew

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Greenock, David

X-Fab
- 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
  
  M. Wilson, Semilab SDI
  
  David Greenock, X-Fab
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Carlos Almeida, Semilab SDI
  
  John D’Amico, Semilab SDI
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
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Grünenpütt, Jan

United Monolithic Semiconductors France
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Gupta, Geetak

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Hahn, H.

AIXTRON SE
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Hansen, Ulli

MSG Lithoglas GmbH
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Hara, N.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Harden, G.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Haung, Chong Rong

Chang Gung University,
- 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer
  
  Chia-Hao Liu, Chang Gung University,
  
  Hsien-Chin Chiu, Chang Gung University,
  
  Hsiang Chun Wang, Chang Gung University,
  
  Hsuan Ling Kao, Chang Gung University
  
  Chong Rong Haung, Chang Gung University,
  
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Henderson, T.

Qorvo
- 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography
  
  C. Wang, Qorvo
  
  L. Huynh, Qorvo
  
  T. Henderson, Qorvo
  
  F. Pool, Qorvo
  
  B. Lindstedt, Qorvo
  
  C. Nevers, Qorvo
  
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Herbert, Kai C.

Kwansei Gakuin University
- 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN
  
  Kai C. Herbert, Kwansei Gakuin University
  
  Kazuki Shibata, Kwansei Gakuin University
  
  Joel T. Asubar, University of Fukui
  
  Masaaki Kuzuhara, Kwansei Gakuin University
  
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Herrault, Florian

HRL Laboratories
- 3.1.2021 Fabrication of High-Performance Compound Semiconductor RF Circuits Using Heterogeneously-Integrated Transistor Chiplets in Interposers
  
  Florian Herrault, HRL Laboratories
  
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Heuken, M.

AIXTRON SE
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Hodiak, Justin

MBO Partners, Herndon, VA
- 1.1.2021 Next Revolution in Compound Semiconductor Materials
  
  Mark Rosker, Defense Advanced Research Projects Agency
  
  William D. Palmer, Defense Advanced Research Projects Agency
  
  T.-H. Chang, HetInTec Corp.
  
  Joseph J. Mauer, MBO Partners, Herndon, VA
  
  Justin Hodiak, MBO Partners, Herndon, VA
  
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Hoffman, A.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Hsiao, Fu-Chen

University of Illinois at Urbana-Champaign
- 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
  
  John Dallesasse, University of Illinois at Urbana-Chamapign
  
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Hsu, Yu-Min

WIN Semiconductors Corp
- 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification
  
  Shih-Kuei Chou, WIN Semiconductors Corp
  
  Yuan-Hsin Lin, WIN Semiconductors Corp
  
  Wen-Hsing Liao, WIN Semiconductors Corp
  
  Yu-Min Hsu, WIN Semiconductors Corp
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Huang, Chong Rong

Chang Gung University
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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Huang, Fan-Hsiu

WIN Semiconductors Corporation
- 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Yong-Han Lin, WIN Semiconductors Corporation
  
  Che-Kai Lin, WIN Semiconductors Corporation
  
  Fan-Hsiu Huang, WIN Semiconductors Corporation
  
  Wei-Chou Wang, WIN Semiconductors Corporation
  
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Huynh, L.

Qorvo
- 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography
  
  C. Wang, Qorvo
  
  L. Huynh, Qorvo
  
  T. Henderson, Qorvo
  
  F. Pool, Qorvo
  
  B. Lindstedt, Qorvo
  
  C. Nevers, Qorvo
  
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Jun, Byoungchul

Wavice Inc.,
- 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications
  
  Sangmin Lee, Wavice Inc.,
  
  Byoungchul Jun, Wavice Inc.,
  
  Chulsoon Choi, Wavice Inc.,
  
  Hyeyoung Jung, Wavice Inc.,
  
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Jung, Hyeyoung

Wavice Inc.,
- 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications
  
  Sangmin Lee, Wavice Inc.,
  
  Byoungchul Jun, Wavice Inc.,
  
  Chulsoon Choi, Wavice Inc.,
  
  Hyeyoung Jung, Wavice Inc.,
  
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Kao, Hsuan Ling

Chang Gung University
- 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer
  
  Chia-Hao Liu, Chang Gung University,
  
  Hsien-Chin Chiu, Chang Gung University,
  
  Hsiang Chun Wang, Chang Gung University,
  
  Hsuan Ling Kao, Chang Gung University
  
  Chong Rong Haung, Chang Gung University,
  
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Kao, Hsuan-Ling

Chang Gung University
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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- 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
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Kao, Yung-Chung

IntelliEpi Inc.
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Kebede, Tina

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Keller, Stacia

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Kim, Jeehwan

Massachusetts Institute of Technology,
- 1.2.2021 Challenges and Opportunities in Remote Epitaxy for Releasable Epilayers on Graphene
  
  Jeehwan Kim, Massachusetts Institute of Technology,
  
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Kim, Seullam

IVWorks Co., Ltd.,
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Kordina, Olof

SweGaN AB
- 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
  
  Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
  
  Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
  
  Mattias Thorsell, Chalmers University of Technology
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Niklas Rorsman, Chalmers University of Technology
  
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- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Kotani, J.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Kraman, Mark

University of Illinois Urbana-Champagne
- 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
  
  John Dallesasse, University of Illinois at Urbana-Chamapign
  
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Krasowski, M.

NASA Glenn Research Center
- 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs
  
  P. Neudeck, NASA Glenn Research Center
  
  D. Spry, NASA Glenn Research Center
  
  M. Krasowski, NASA Glenn Research Center
  
  L. Chen, 2Ohio Aerospace Institute
  
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Kumazaki, Y.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Kuo, Chi-Hsiang

WIN Semiconductors Corp
- 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification
  
  Shih-Kuei Chou, WIN Semiconductors Corp
  
  Yuan-Hsin Lin, WIN Semiconductors Corp
  
  Wen-Hsing Liao, WIN Semiconductors Corp
  
  Yu-Min Hsu, WIN Semiconductors Corp
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Kurahash, N.

Fujitsu Limited
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Kuzuhara, Masaaki

Kwansei Gakuin University
- 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN
  
  Kai C. Herbert, Kwansei Gakuin University
  
  Kazuki Shibata, Kwansei Gakuin University
  
  Joel T. Asubar, University of Fukui
  
  Masaaki Kuzuhara, Kwansei Gakuin University
  
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Lagowski, Jacek

Semilab SDI, Tampa, FL,
- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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- 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
  
  M. Wilson, Semilab SDI
  
  David Greenock, X-Fab
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Carlos Almeida, Semilab SDI
  
  John D’Amico, Semilab SDI
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
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Lambert, Benoît

United Monolithic Semiconductors Germany
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Lee, Joe

BISTel America
- 6.5.2021 Uncovering Process Interdependency Using Data Mining
  
  Kim Kok Gan, Bistel America Inc
  
  Gabe Villareal, BISTel America
  
  Joe Lee, BISTel America
  
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Lee, Sangmin

Wavice Inc.,
- 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications
  
  Sangmin Lee, Wavice Inc.,
  
  Byoungchul Jun, Wavice Inc.,
  
  Chulsoon Choi, Wavice Inc.,
  
  Hyeyoung Jung, Wavice Inc.,
  
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Lee, Soo Min

Veeco Instruments – MOCVD
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Lerner, G.

Gal-El (MMIC)
- 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication
  
  I. Toledo, Gal-El (MMIC)
  
  Y. Gerchman, Gal-El (MMIC)
  
  G. Lerner, Gal-El (MMIC)
  
  M. Vinokorov, Gal-El (MMIC)
  
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Li, Wei

IntelliEpi Inc.
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Liang, H.

imec,
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Liang, Jianbo

Osaka City University
- 7.1.2021 Low-temperature direct wafer bonding innovating CS device technologies
  
  Naoteru Shigekawa, Osaka City University
  
  Jianbo Liang, Osaka City University
  
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Liao, Wen-Hsing

WIN Semiconductors Corp
- 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification
  
  Shih-Kuei Chou, WIN Semiconductors Corp
  
  Yuan-Hsin Lin, WIN Semiconductors Corp
  
  Wen-Hsing Liao, WIN Semiconductors Corp
  
  Yu-Min Hsu, WIN Semiconductors Corp
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Liddy, Kyle

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Lin, Che-Kai

WIN Semiconductors Corporation
- 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Yong-Han Lin, WIN Semiconductors Corporation
  
  Che-Kai Lin, WIN Semiconductors Corporation
  
  Fan-Hsiu Huang, WIN Semiconductors Corporation
  
  Wei-Chou Wang, WIN Semiconductors Corporation
  
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Lin, Cheng-Kuo

WIN Semiconductors Corp
- 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification
  
  Shih-Kuei Chou, WIN Semiconductors Corp
  
  Yuan-Hsin Lin, WIN Semiconductors Corp
  
  Wen-Hsing Liao, WIN Semiconductors Corp
  
  Yu-Min Hsu, WIN Semiconductors Corp
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Lin, Yong-Han

WIN Semiconductors Corporation
- 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Yong-Han Lin, WIN Semiconductors Corporation
  
  Che-Kai Lin, WIN Semiconductors Corporation
  
  Fan-Hsiu Huang, WIN Semiconductors Corporation
  
  Wei-Chou Wang, WIN Semiconductors Corporation
  
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Lin, Yuan-Hsin

WIN Semiconductors Corp
- 2.5.2021 A Deep Learning-based Multi-model Method for Etching Defect Image Classification
  
  Shih-Kuei Chou, WIN Semiconductors Corp
  
  Yuan-Hsin Lin, WIN Semiconductors Corp
  
  Wen-Hsing Liao, WIN Semiconductors Corp
  
  Yu-Min Hsu, WIN Semiconductors Corp
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Lindstedt, B.

Qorvo
- 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography
  
  C. Wang, Qorvo
  
  L. Huynh, Qorvo
  
  T. Henderson, Qorvo
  
  F. Pool, Qorvo
  
  B. Lindstedt, Qorvo
  
  C. Nevers, Qorvo
  
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Liu, Chia Cheng

Unikorn Semiconductor Corporation
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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Liu, Chia-Hao

Chang Gung University,
- 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer
  
  Chia-Hao Liu, Chang Gung University,
  
  Hsien-Chin Chiu, Chang Gung University,
  
  Hsiang Chun Wang, Chang Gung University,
  
  Hsuan Ling Kao, Chang Gung University
  
  Chong Rong Haung, Chang Gung University,
  
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Liu, Xiang

Transphorm Inc.,
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Lo, Jia-You

WIN Semiconductors Corporation
- 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal
  
  Jia-You Lo, WIN Semiconductors Corporation
  
  , Yang-Hao Chen, WIN Semiconductors Corporation
  
  Jui-Ping Chuang, WIN Semiconductors Corporation
  
  Chun-Jui Chiu, WIN Semiconductors Corporation
  
  Po-Chun Weng, WIN Semiconductors Corporation
  
  Kuo-Hua Chen, WIN Semiconductors Corporation
  
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Looi, Kok Kheong

MAX I.E.G. LLC
- 7.4.2021 Harnessing the Capacity Model Simulator For a 200mm III-V Greenfield Fab Strategic Planning
  
  Kok Kheong Looi, MAX I.E.G. LLC
  
  Patrick See, MAX I.E.G. LLC
  
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Lowe, Frank

Akash Systems, San Francisco, CA, USA
- 2.1.2021 GaN-on-diamond design for manufacturing
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Frank Lowe, Akash Systems, San Francisco, CA, USA
  
  Kyle Graham, Akash Systems, San Francisco, CA, USA
  
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MALAQUIN, Cédric

Yole Developpement
- 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Cédric MALAQUIN, Yole Developpement
  
  Antoine Bonnabel, Yole Developpement
  
  C. Troadec, Yole Developpement, France
  
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Marinskiy, Dmitriy

Semilab SDI, Tampa, FL,
- 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
  
  M. Wilson, Semilab SDI
  
  David Greenock, X-Fab
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Carlos Almeida, Semilab SDI
  
  John D’Amico, Semilab SDI
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
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- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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Marx, M.

AIXTRON SE
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Mauer, Joseph J.

MBO Partners, Herndon, VA
- 1.1.2021 Next Revolution in Compound Semiconductor Materials
  
  Mark Rosker, Defense Advanced Research Projects Agency
  
  William D. Palmer, Defense Advanced Research Projects Agency
  
  T.-H. Chang, HetInTec Corp.
  
  Joseph J. Mauer, MBO Partners, Herndon, VA
  
  Justin Hodiak, MBO Partners, Herndon, VA
  
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Maus, Simon

MSG Lithoglas GmbH
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Mazzalai, Dr. A.

BU Semiconductor, Evatec AG, Trübbach (SG),
- 9.3.2021 Developing production process for high performance piezoelectrics in MEMS applications
  
  Dr. A. Mazzalai, BU Semiconductor, Evatec AG, Trübbach (SG),
  
  Dr. X. Yao, BU Semiconductor, Evatec AG, Trübbach (SG),
  
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McCarthy, Lee

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Minoura, Y.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Mishra, Umesh

Transphorm
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Moereke, Janina

United Monolithic Semiconductorss GmBH
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Moran, Jeff

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Morilon, April

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Mukish, Pars

Yole Developpement
- 7.3.2021 How are high-volume 3D Sensing applications shaping the Compound Semiconductor Industry?
  
  E. Dogmus, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Pars Mukish, Yole Developpement
  
  Pierrick Boulay, Yole Developpement
  
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Neffati, Mehdy

United Monolithic Semiconductorss SAS
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Neudeck, P.

NASA Glenn Research Center
- 4.3.2021 Processing Choices for Achieving Long Term IC Operation at 500° C
  
  D. Spry, NASA Glenn Research Center
  
  P. Neudeck, NASA Glenn Research Center
  
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- 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs
  
  P. Neudeck, NASA Glenn Research Center
  
  D. Spry, NASA Glenn Research Center
  
  M. Krasowski, NASA Glenn Research Center
  
  L. Chen, 2Ohio Aerospace Institute
  
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Nevers, C.

Qorvo
- 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography
  
  C. Wang, Qorvo
  
  L. Huynh, Qorvo
  
  T. Henderson, Qorvo
  
  F. Pool, Qorvo
  
  B. Lindstedt, Qorvo
  
  C. Nevers, Qorvo
  
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Noh, Hong-Kyun

VWorks Co., Ltd.,
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Noh, Young-Kyun

IVWorks Co., Ltd.,
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Notarangelo, Christine

Veeco Instruments – MOCVD
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Ochoa, Josh

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Odnoblyudov, V.

Qromis, inc.
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Odnoblyudov, Vladimir

Qromis, Inc.
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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Ohki, T.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Okamoto, N.

Fujitsu Limited and Fujitsu Laboratories Ltd.
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Oligschlaeger, R.

AIXTRON SE
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Ostermay, Ina

Ferdinand-Braun-Institut
- 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer
  
  Hossein Yazdani, Ferdinand-Braun-Institut,
  
  Serguei Chevtchenko, Ferdinand-Braun-Institut,
  
  Ina Ostermay, Ferdinand-Braun-Institut
  
  Joachim Würfl, Ferdinand-Braun-Institut
  
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Ozaki, S.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Palmer, William D.

Defense Advanced Research Projects Agency
- 1.1.2021 Next Revolution in Compound Semiconductor Materials
  
  Mark Rosker, Defense Advanced Research Projects Agency
  
  William D. Palmer, Defense Advanced Research Projects Agency
  
  T.-H. Chang, HetInTec Corp.
  
  Joseph J. Mauer, MBO Partners, Herndon, VA
  
  Justin Hodiak, MBO Partners, Herndon, VA
  
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Park, Byung-Guon

IVWorks Co., Ltd.,
- 2.2.2021 Hybrid NH3/N2 Molecular Beam Epitaxy with Artificial-Intelligence-Assisted Reflection High-Energy Electron Diffraction Analysis
  
  Young-Kyun Noh, IVWorks Co., Ltd.,
  
  Hong-Kyun Noh, VWorks Co., Ltd.,
  
  Byung-Guon Park, IVWorks Co., Ltd.,
  
  Seullam Kim, IVWorks Co., Ltd.,
  
  Cheng-Yu Chen, IntelliEpi Inc.,
  
  Tsung-Pei Chin, IntelliEpi Inc.
  
  Wei Li, IntelliEpi Inc.
  
  Yung-Chung Kao, IntelliEpi Inc.
  
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Peng, Yu-Ting

University of Illinois, Urbana-Champaign
- 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors
  
  Dufei Wu, University of Illinois at Urbana Champaign
  
  Xin Yu, University of Illinois at Urbana-Champaign
  
  Yu-Ting Peng, University of Illinois, Urbana-Champaign
  
  Milton Feng, University of Illinois, Urbana-Champaign
  
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Pikul, Kevin P.

University of Illinois Urbana-Champagne
- 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
  
  John Dallesasse, University of Illinois at Urbana-Chamapign
  
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Pool, F.

Qorvo
- 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography
  
  C. Wang, Qorvo
  
  L. Huynh, Qorvo
  
  T. Henderson, Qorvo
  
  F. Pool, Qorvo
  
  B. Lindstedt, Qorvo
  
  C. Nevers, Qorvo
  
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Porter, Matthew

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Reis, Kenneth P.

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Riddell, Kevin

SPTS, Newport, UK
- 9.2.2021 State-of-the-Art Etch and Deposition Processing of highly doped ScAlN for 5G and Wi-Fi Filter Applications
  
  Anthony Barker, SPTS Technologies Ltd.
  
  Kevin Riddell, SPTS, Newport, UK
  
  Alex Wood, SPTS Technologies Ltd.
  
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Riepe, Klaus

United Monolithic Semiconductorss GmBH
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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Romanczyk, Brian

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Rorsman, Niklas

Chalmers University of Technology
- 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
  
  Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
  
  Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
  
  Mattias Thorsell, Chalmers University of Technology
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Niklas Rorsman, Chalmers University of Technology
  
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Rosker, Mark

Defense Advanced Research Projects Agency
- 1.1.2021 Next Revolution in Compound Semiconductor Materials
  
  Mark Rosker, Defense Advanced Research Projects Agency
  
  William D. Palmer, Defense Advanced Research Projects Agency
  
  T.-H. Chang, HetInTec Corp.
  
  Joseph J. Mauer, MBO Partners, Herndon, VA
  
  Justin Hodiak, MBO Partners, Herndon, VA
  
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Sato, M.

Fujitsu Limited
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Savtchouk, S.

Semilab SDI,
- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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See, Patrick

MAX I.E.G. LLC
- 7.4.2021 Harnessing the Capacity Model Simulator For a 200mm III-V Greenfield Fab Strategic Planning
  
  Kok Kheong Looi, MAX I.E.G. LLC
  
  Patrick See, MAX I.E.G. LLC
  
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Shao, Qinghui

2Lawrence Livermore National Laboratory, Livermore, CA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Shen, Shyh-Chiang

Georgia Institute of Technology, Atlanta, GA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Shibata, Kazuki

Kwansei Gakuin University
- 3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN
  
  Kai C. Herbert, Kwansei Gakuin University
  
  Kazuki Shibata, Kwansei Gakuin University
  
  Joel T. Asubar, University of Fukui
  
  Masaaki Kuzuhara, Kwansei Gakuin University
  
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Shigekawa, Naoteru

Osaka City University
- 7.1.2021 Low-temperature direct wafer bonding innovating CS device technologies
  
  Naoteru Shigekawa, Osaka City University
  
  Jianbo Liang, Osaka City University
  
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Sommer, Daniel

United Monolithic Semiconductorss GmBH
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Splettstößer, Jörg

United Monolithic Semiconductors – GmbH
- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Spry, D.

NASA Glenn Research Center
- 4.3.2021 Processing Choices for Achieving Long Term IC Operation at 500° C
  
  D. Spry, NASA Glenn Research Center
  
  P. Neudeck, NASA Glenn Research Center
  
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- 4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs
  
  P. Neudeck, NASA Glenn Research Center
  
  D. Spry, NASA Glenn Research Center
  
  M. Krasowski, NASA Glenn Research Center
  
  L. Chen, 2Ohio Aerospace Institute
  
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Stieglauer, Hermann

United Monolithic Semiconductors Germany
- 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Klaus Riepe, United Monolithic Semiconductorss GmBH
  
  Janina Moereke, United Monolithic Semiconductorss GmBH
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Hervé Blanck, United Monolithic Semiconductors
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Benoît Lambert, United Monolithic Semiconductors Germany
  
  Jerome Van de Casteele, United Monolithic Semiconductorss SAS
  
  Mehdy Neffati, United Monolithic Semiconductorss SAS
  
  Ulli Hansen, MSG Lithoglas GmbH
  
  Simon Maus, MSG Lithoglas GmbH
  
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- 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
  
  Jan Grünenpütt, United Monolithic Semiconductors France
  
  Daniel Sommer, United Monolithic Semiconductorss GmBH
  
  Jörg Splettstößer, United Monolithic Semiconductors – GmbH
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Hermann Stieglauer, United Monolithic Semiconductors Germany
  
  Hervé Blanck, United Monolithic Semiconductors
  
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Su, Patrick

University of Illinois at Urbana-Champaign
- 9.6.2021 Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
  
  John Dallesasse, University of Illinois at Urbana-Chamapign
  
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Swenson, Brian

Transphorm Inc.
- 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
  
  Xiang Liu, Transphorm Inc.,
  
  Brian Romanczyk, Transphorm Inc.
  
  Stacia Keller, Transphorm Inc.
  
  Brian Swenson, Transphorm Inc.
  
  Ron Birkhahn, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  Davide Bisi, Transphorm Inc.
  
  Umesh Mishra, Transphorm
  
  Lee McCarthy, Transphorm Inc.
  
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Taddei, John

Veeco Instruments – Precision Surface Processing
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Takahashi, A.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Tarof, L.

ELPHiC
- 7.2.2021 Driving lower fiber optical power consumption through monolithic electronic and optoelectronic integration
  
  L. Tarof, ELPHiC
  
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Thorsell, Mattias

Chalmers University of Technology
- 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
  
  Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
  
  Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
  
  Mattias Thorsell, Chalmers University of Technology
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Niklas Rorsman, Chalmers University of Technology
  
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Toledo, I.

Gal-El (MMIC)
- 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication
  
  I. Toledo, Gal-El (MMIC)
  
  Y. Gerchman, Gal-El (MMIC)
  
  G. Lerner, Gal-El (MMIC)
  
  M. Vinokorov, Gal-El (MMIC)
  
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Toth, S.

Semilab ZRT
- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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Troadec, C.

Yole Developpement, France
- 9.1.2021 5G SMARTPHONE AND TELECOM INFRASTRUCTURE ARE EMPOWERED BY COMPOUND SEMICONDUCTOR
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Développement 75 cours Emile Zola, 69100 Villeurbanne France
  
  Cédric MALAQUIN, Yole Developpement
  
  Antoine Bonnabel, Yole Developpement
  
  C. Troadec, Yole Developpement, France
  
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- 4.2.2021 The Rise of Power SiC and GaN Market and The Impact of COVID-19
  
  E. Dogmus, Yole Developpement, France
  
  Ahmed Ben-Slimane, Yole Developpement
  
  P. Chiu, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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Tucker, Eric

Veeco Instruments – MOCVD
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Tye, Lee

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Tyler, Phillip

Veeco Instruments – Precision Surface Processing
- 6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness
  
  Phillip Tyler, Veeco Instruments – Precision Surface Processing
  
  Jonathan Fijal, Veeco Instruments – Precision Surface Processing
  
  Ian Cochran, Veeco Instruments – Precision Surface Processing
  
  John Taddei, Veeco Instruments – Precision Surface Processing
  
  Eric Tucker, Veeco Instruments – MOCVD
  
  Soo Min Lee, Veeco Instruments – MOCVD
  
  Eric Armour, Veeco Instruments – MOCVD
  
  Christine Notarangelo, Veeco Instruments – MOCVD
  
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Villareal, Gabe

BISTel America
- 6.5.2021 Uncovering Process Interdependency Using Data Mining
  
  Kim Kok Gan, Bistel America Inc
  
  Gabe Villareal, BISTel America
  
  Joe Lee, BISTel America
  
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Vinokorov, M.

Gal-El (MMIC)
- 6.2.2021 Endpoint Detection Using OES in Via SiC / GaN Fabrication
  
  I. Toledo, Gal-El (MMIC)
  
  Y. Gerchman, Gal-El (MMIC)
  
  G. Lerner, Gal-El (MMIC)
  
  M. Vinokorov, Gal-El (MMIC)
  
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Walker, Jesse

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Walker Jr., Dennis

Air Force Research Laboratory
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Wang, Hsiang-Chun

Chang Gung University
- 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
  
  Chong Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
  Ming Chin Chen, Unikorn Semiconductor Corporation
  
  Chia Cheng Liu, Unikorn Semiconductor Corporation
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
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Wang, J.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Wang, C.

Qorvo
- 6.4.2021 A Systematic Approach for Determining Overlay Spec Limits in Photolithography
  
  C. Wang, Qorvo
  
  L. Huynh, Qorvo
  
  T. Henderson, Qorvo
  
  F. Pool, Qorvo
  
  B. Lindstedt, Qorvo
  
  C. Nevers, Qorvo
  
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Wang, Hsiang Chun

Chang Gung University,
- 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer
  
  Chia-Hao Liu, Chang Gung University,
  
  Hsien-Chin Chiu, Chang Gung University,
  
  Hsiang Chun Wang, Chang Gung University,
  
  Hsuan Ling Kao, Chang Gung University
  
  Chong Rong Haung, Chang Gung University,
  
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Wang, Hsiang-Chun

Chang Gung University
- 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design
  
  Hsiang-Chun Wang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University
  
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Wang, Wei-Chou

WIN Semiconductors Corporation
- 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Yong-Han Lin, WIN Semiconductors Corporation
  
  Che-Kai Lin, WIN Semiconductors Corporation
  
  Fan-Hsiu Huang, WIN Semiconductors Corporation
  
  Wei-Chou Wang, WIN Semiconductors Corporation
  
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Watanabe, K.

Fujitsu Limited and Fujitsu Laboratories Ltd
- 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers
  
  N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
  
  A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  N. Kurahash, Fujitsu Limited
  
  M. Sato, Fujitsu Limited
  
  N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
  
  K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
  
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Welch, Michael Thomas

MAX I.E.G. LLC
- 9.4.2021 Continual Improvement of Cumulative Yield in GaAs Wafer Fabrication
  
  Michael Thomas Welch, MAX I.E.G. LLC
  
  Mario Faria, The MAX Group
  
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Wen, Kai-Hsin

SweGaN AB and Chalmers University of Technology
- 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
  
  Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
  
  Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
  
  Mattias Thorsell, Chalmers University of Technology
  
  Olof Kordina, SweGaN AB
  
  Jr-Tai Chen, SweGaN AB
  
  Niklas Rorsman, Chalmers University of Technology
  
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Weng, Chang'e

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coudriet, Qorvo
  
  Josh Ochoa, Qorvo
  
  Jeff Moran, Qorvo
  
  Matthew Porter, Qorvo
  
  Kenneth P. Reis, Qorvo
  
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Weng, Po-Chun

WIN Semiconductors Corporation
- 3.4.2021 Seeing the World from a Drop of Water: A Novel Environment-Protecting Technique for Photoresist Strip, Metal Lift-off, and Etching Byproduct Removal
  
  Jia-You Lo, WIN Semiconductors Corporation
  
  , Yang-Hao Chen, WIN Semiconductors Corporation
  
  Jui-Ping Chuang, WIN Semiconductors Corporation
  
  Chun-Jui Chiu, WIN Semiconductors Corporation
  
  Po-Chun Weng, WIN Semiconductors Corporation
  
  Kuo-Hua Chen, WIN Semiconductors Corporation
  
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Werner, Elizabeth

KBR
- 3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
  
  Elizabeth Werner, KBR
  
  Daniel Brooks, Air Force Research Laboratory
  
  Kyle Liddy, Air Force Research Laboratory
  
  Robert Fitch Jr., Air Force Research Laboratory
  
  James Gillespie, Air Force Research Laboratory
  
  Dennis Walker Jr., Air Force Research Laboratory
  
  Antonio Crespo, Air Force Research Laboratory
  
  Daniel M. Dryden, KBR
  
  Andrew Green, Air Force Research Laboratory
  
  Kelson Chabak, Air Force Research Laboratory
  
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Wilson, M.

Semilab SDI
- 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
  
  M. Wilson, Semilab SDI
  
  David Greenock, X-Fab
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Carlos Almeida, Semilab SDI
  
  John D’Amico, Semilab SDI
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
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- 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  S. Savtchouk, Semilab SDI,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  S. Toth, Semilab ZRT
  
  L. Badeeb, Semilab ZRT
  
  A. Faragó, Semilab ZRT
  
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Wood, Alex

SPTS Technologies Ltd.
- 9.2.2021 State-of-the-Art Etch and Deposition Processing of highly doped ScAlN for 5G and Wi-Fi Filter Applications
  
  Anthony Barker, SPTS Technologies Ltd.
  
  Kevin Riddell, SPTS, Newport, UK
  
  Alex Wood, SPTS Technologies Ltd.
  
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Wu, Dufei

University of Illinois at Urbana Champaign
- 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors
  
  Dufei Wu, University of Illinois at Urbana Champaign
  
  Xin Yu, University of Illinois at Urbana-Champaign
  
  Yu-Ting Peng, University of Illinois, Urbana-Champaign
  
  Milton Feng, University of Illinois, Urbana-Champaign
  
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Wu, Wen-Hsin

WIN Semiconductors Corporation
- 5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Yong-Han Lin, WIN Semiconductors Corporation
  
  Che-Kai Lin, WIN Semiconductors Corporation
  
  Fan-Hsiu Huang, WIN Semiconductors Corporation
  
  Wei-Chou Wang, WIN Semiconductors Corporation
  
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Würfl, Joachim

Ferdinand-Braun-Institut
- 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer
  
  Hossein Yazdani, Ferdinand-Braun-Institut,
  
  Serguei Chevtchenko, Ferdinand-Braun-Institut,
  
  Ina Ostermay, Ferdinand-Braun-Institut
  
  Joachim Würfl, Ferdinand-Braun-Institut
  
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Xu, Zhiyu

Georgia Institute of Technology, Atlanta, GA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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Yao, Dr. X.

BU Semiconductor, Evatec AG, Trübbach (SG),
- 9.3.2021 Developing production process for high performance piezoelectrics in MEMS applications
  
  Dr. A. Mazzalai, BU Semiconductor, Evatec AG, Trübbach (SG),
  
  Dr. X. Yao, BU Semiconductor, Evatec AG, Trübbach (SG),
  
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Yazdani, Hossein

Ferdinand-Braun-Institut,
- 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer
  
  Hossein Yazdani, Ferdinand-Braun-Institut,
  
  Serguei Chevtchenko, Ferdinand-Braun-Institut,
  
  Ina Ostermay, Ferdinand-Braun-Institut
  
  Joachim Würfl, Ferdinand-Braun-Institut
  
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Ye, H.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Yoo, Jae-Hyuck

Lawrence Livermore National Laboratory, Livermore, CA
- 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchprohm, Georgia Tech
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
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You, S.

imec
- 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
  
  K. Geens, imec,
  
  H. Hahn, AIXTRON SE
  
  H. Liang, imec,
  
  M. Borga, imec
  
  D. Cingu, imec
  
  S. You, imec
  
  M. Marx, AIXTRON SE
  
  R. Oligschlaeger, AIXTRON SE
  
  D. Fahle, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  V. Odnoblyudov, Qromis, inc.
  
  O. Aktas, Qromis, Inc.
  
  C. Basceri, Qromis, Inc.
  
  S. Decoutere, imec
  
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Yu, Xin

University of Illinois at Urbana-Champaign
- 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors
  
  Dufei Wu, University of Illinois at Urbana Champaign
  
  Xin Yu, University of Illinois at Urbana-Champaign
  
  Yu-Ting Peng, University of Illinois, Urbana-Champaign
  
  Milton Feng, University of Illinois, Urbana-Champaign
  
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Zhu, Z.

University of Notre Dame
- 5.5.2021 Temperature Dependent Measurement of GaN Impact Ionization Coefficients
  
  L. Cao, University of Notre Dame
  
  Z. Zhu, University of Notre Dame
  
  G. Harden, University of Notre Dame
  
  H. Ye, University of Notre Dame
  
  J. Wang, University of Notre Dame
  
  A. Hoffman, University of Notre Dame
  
  P. Fay, University of Notre Dame
  
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Ziad, Hocine

ON-Semiconductor
- 8.6.2021 Using the CnCV Technique to Explore AlN as an Alternative Passivation Layer in GaN HEMT Technology
  
  Hocine Ziad, ON-Semiconductor
  
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Zimmerman, Kris

Qorvo
- 3.3.2021 Wafer Breakage Reduction in Cu Bump Processing of GaAs Technologies
  
  Chang’e Weng, Qorvo
  
  Tina Kebede, Qorvo
  
  April Morilon, Qorvo
  
  Jesse Walker, Qorvo
  
  Kris Zimmerman, Qorvo
  
  Lee Tye, Qorvo
  
  John Coud

Van de Casteele, Jerome

3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

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8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

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Armour, Eric

6.3.2021 Implementation of End Point Detection for Compound Semiconductor Wafer Thinning Applications and Investigation of Gallium Arsenide Etch Rates and Surface Roughness

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3.6.2021 Theoretical study of recoil-implanted N atoms in Mg-implanted GaN

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2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

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8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

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2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

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8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

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3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating

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1.1.2021 Next Revolution in Compound Semiconductor Materials

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8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

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4.1.2021 Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs

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4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

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