Sponsorship Opportunities are available! Visit our Sponsors page for more information
View
By Sessions
View
By Author

  • Suda, J.

    Institute of Materials and Systems for Sustainability, Nagoya University

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • A. Mastro, Michael

    U.S. Naval Research Laboratory

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

  • Abdallah, Zeina

    University of Bristol

    • 12.3.2023 Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly

      Zeina Abdallah, University of Bristol
      James Pomeroy, University of Bristol
      Nicolas Blasakis, Adamant Composite Ltd.
      Athanasios Baltopoulos, Adamant Composite Ltd.
      Antonios Vavouliotis, Adamant Composite Ltd.
      Martin Kuball, University of Bristol

      12.3.2023 CS_MANTECH_2023_final_Zeina_Abdallah

  • Adachi, F.

    Sumiden Semiconductor Materials Co., Ltd.,

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Afroz, Shamima

    Northrop Grumman

  • Ahmed, Khaled

    Intel Corporation

  • Ahn, Dal

    Soonchunhyang University, Korea

    • 4.3.2023 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs on HPSI SiC Substrate

      Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
      Jinman Jin, Wavice Inc.
      Inseop Kim, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
      Seo Koo, Soonchunhyang University, Korea
      Dal Ahn, Soonchunhyang University, Korea

      4.3.2023 CS_MANTECH_2023_Sangmin_Lee_Wavice_paper_4.3

  • Akhavan, Vahid

    PulseForge Corp.

    • 3.3.2023 Photonic Debonding for Wafer-Level Packaging

      Vikram Turkani, PulseForge Corp.
      Vahid Akhavan, PulseForge Corp.
      Kurt Schroder, PulseForge Corp.
      Luke Prenger, Brewer Science, Inc.
      Xavier Martinez, Brewer Science, Inc.

      3.3 Turkani v2_PFI Edits

  • Aktas, O.

    Sandia National Labs, Albuquerque, NM

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

  • Alema, Fikadu

    Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

    • 7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate

      Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USA
      Fengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Bharat Jalan, University of Minnesota, Minneapolis, MN 55455, USA
      Steven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA

      7.2.2023 Csmantech_Manuscript_Final_PrakashPS

    • 18.7.2023 Manufacturable processes and performance characteristics of few-layer hexagonal boron nitride-based templates on sapphire

      Tim Vogt, Agnitron Technology, Inc
      Vitali Soukhoveev, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

      18.07.2023 CS_MANTECH-manuscript 2023

  • Allford, Craig

    Cardiff University

    • 14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates

      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      Mukul Debnath, IQE plc
      Andrew Clark, IQE, Cardiff, UK
      Peter M. Smowton, Cardiff University, IQE plc

      14.2.2023 CS_MANTECH-2023_14.2_Final

    • 18.4.2023 Characterisation Techniques for On-Wafer Testing of VCSELs in Volume Manufacture

      Jack Baker, Cardiff University
      C. Hentschel, Cardiff University
      Craig Allford, Cardiff University
      Sara Gillgrass, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.04.2023_Extended Abstract_R1_Compressed

  • Almeida, Carlos

    Semilab SDI

  • Amann, M.

    United Monolithic Semiconductors – GmbH

  • Anderson, Travis J.

    U.S. Naval Research Laboratory

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • Ando, Y.

    Institute of Materials and Systems for Sustainability, Nagoya University

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Aoyama, K.

    Sumiden Semiconductor Materials Co., Ltd.,

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Aratani, T.

    Hamamatsu Photonics K.K

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Arias, Andrea

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Armitage, Rob

    Lumileds LLC

    • 16.1.2023 Technical and Manufacturing Challenges in MicroLED Processes

      Hee Jin Kim, Lumileds LLC
      Rob Armitage, Lumileds LLC
      Joseph Flemish, Lumileds LLC
      Zhongmin Ren, Lumileds LLC
      Mark Holmes, Lumileds LLC

      16.1.2023_Kim_MicroLED Processes

    • 16.3.2023 Design and Performance of P-side down Green Tunnel-Junction LEDs

      Sheikh Ifatur Rahman, The Ohio State University, Columbus, Ohio
      Rob Armitage, Lumileds LLC
      Siddharth Rajan, Ohio State University

      16.3.2023 Rahman_PdownLED

  • Arnaud, A.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Arnaud, J.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Ashraf, Huma

    KLA Corporation (SPTS Division)

    • 18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.

      Tristan T. Burman, Cardiff University
      Jash Patel, KLA Corporation
      Huma Ashraf, KLA Corporation (SPTS Division)
      Tarran Grange, KLA Corporation
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.08.2023 CS_MANTECH-FinalDraft-18-10

  • Atwimah, Samuel

    University of Toledo, Toledo OH

    • 18.15.2023 Characterization of Optically Modulated Semi-Insulating GaN Photoconductive Semiconductor Switches

      Geoffrey Foster, Jacobs Inc., Washington DC
      Andrew Koehler, U. S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Sadab Mahmud, University of Toledo, Toledo OH
      Samuel Atwimah, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory

      18.15.2023 Foster – CSMANTECH2023 v2

  • Baker, Jack

    Cardiff University

    • 18.4.2023 Characterisation Techniques for On-Wafer Testing of VCSELs in Volume Manufacture

      Jack Baker, Cardiff University
      C. Hentschel, Cardiff University
      Craig Allford, Cardiff University
      Sara Gillgrass, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.04.2023_Extended Abstract_R1_Compressed

  • Balandan, Marietta L.

    Skyworks Solutions Inc.,

    • 10.1.2023 Mechanisms and Control of Photolithography Hotspots in Compound Semiconductor Manufacturing

      Mark J. Miller, Skyworks Solutions Inc.
      Marietta L. Balandan, Skyworks Solutions Inc.,
      Aida J. Castro, Skyworks Solutions, Inc.
      Lorain Ross, Skyworks Solutions, Inc.
      M. Arif Zeeshan, Skyworks Solutions Inc.

      10.1.2023 – Miller Paper

  • Baltopoulos, Athanasios

    Adamant Composite Ltd.

    • 12.3.2023 Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly

      Zeina Abdallah, University of Bristol
      James Pomeroy, University of Bristol
      Nicolas Blasakis, Adamant Composite Ltd.
      Athanasios Baltopoulos, Adamant Composite Ltd.
      Antonios Vavouliotis, Adamant Composite Ltd.
      Martin Kuball, University of Bristol

      12.3.2023 CS_MANTECH_2023_final_Zeina_Abdallah

  • Barnes, Andrew

    European Space Agency

    • 4.4.2023 Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs

      Terirama Thingujam, University of Bristol
      Michael J Uren, University of Bristol
      Niklas Rorsman, Chalmers University of Technology
      Matthew Smith, University of Bristol
      Andrew Barnes, European Space Agency
      Michele Brondi, Akkodis for European Space Agency (ESA)
      Martin Kuball, University of Bristol

      4.4.2023 CS_MANTECH_2023_Terirama_Thingujam_UofBristol_paper_4.4_revised

  • Barnett, Richard

    KLA Corporation (SPTS Division)

  • Baron, Thierry

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Bathurst, L.

    Crystal Sonic Inc.

  • Beheshti, Mohammadsadegh

    Skyworks Solutions Inc.

    • 10.2.2023 Reduction in Scattered Particles Contamination in Inductively Coupled Plasma Etching Systems for High Volume High Yield Production

      Mohammadsadegh Beheshti, Skyworks Solutions Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.
      Tom Brown, Skyworks Solutions, Inc.

      10.2.2023 – Beheshti Paper

  • Bellotti, J.

    Coherent Corp.

  • Bergman, Joshua

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Berndorfer, T.

    United Monolithic Semiconductors – GmbH

  • Bertoni, M.

    Crystal Sonic Inc.

  • Besancon, Claire

    III-V Lab

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Bidaud, M.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Black, T.

    Crystal Sonic Inc.

  • Blanck, H.

    United Monolithic Semiconductors Germany

  • Blasakis, Nicolas

    Adamant Composite Ltd.

    • 12.3.2023 Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly

      Zeina Abdallah, University of Bristol
      James Pomeroy, University of Bristol
      Nicolas Blasakis, Adamant Composite Ltd.
      Athanasios Baltopoulos, Adamant Composite Ltd.
      Antonios Vavouliotis, Adamant Composite Ltd.
      Martin Kuball, University of Bristol

      12.3.2023 CS_MANTECH_2023_final_Zeina_Abdallah

  • Bohm, T.

    United Monolithic Semiconductors – GmbH

  • Boyer, J. T.

    National Renewable Energy Laboratory

    • 17.4.2023 Comparison of Heterointerface Growth Procedures using High-Growth-Rate Hydride Vapor Phase Epitaxy

      Aaron Ptak, National Renewable Energy Laboratory
      J. T. Boyer, National Renewable Energy Laboratory
      A. K. Braun, Colorado School of Mines
      A. N. Perna, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory

      17.4.2023_Ptak_NREL_extended_abstract_final

    • 17.5.2023 Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V devices

      A. K. Braun, Colorado School of Mines
      J. T. Boyer, National Renewable Energy Laboratory
      William E. McMahon, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory
      Corinne E. Packard, Colorado School of Mines, National Renewable Energy Laboratory
      Aaron Ptak, National Renewable Energy Laboratory

      17.5.2023_Braun-Boyer_NREL_extended_abstract_final

  • Brar, Berinder

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Braun, A. K.

    Colorado School of Mines

    • 17.4.2023 Comparison of Heterointerface Growth Procedures using High-Growth-Rate Hydride Vapor Phase Epitaxy

      Aaron Ptak, National Renewable Energy Laboratory
      J. T. Boyer, National Renewable Energy Laboratory
      A. K. Braun, Colorado School of Mines
      A. N. Perna, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory

      17.4.2023_Ptak_NREL_extended_abstract_final

    • 17.5.2023 Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V devices

      A. K. Braun, Colorado School of Mines
      J. T. Boyer, National Renewable Energy Laboratory
      William E. McMahon, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory
      Corinne E. Packard, Colorado School of Mines, National Renewable Energy Laboratory
      Aaron Ptak, National Renewable Energy Laboratory

      17.5.2023_Braun-Boyer_NREL_extended_abstract_final

  • Britz, David A.

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Brondi, Michele

    Akkodis for European Space Agency (ESA)

    • 4.4.2023 Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs

      Terirama Thingujam, University of Bristol
      Michael J Uren, University of Bristol
      Niklas Rorsman, Chalmers University of Technology
      Matthew Smith, University of Bristol
      Andrew Barnes, European Space Agency
      Michele Brondi, Akkodis for European Space Agency (ESA)
      Martin Kuball, University of Bristol

      4.4.2023 CS_MANTECH_2023_Terirama_Thingujam_UofBristol_paper_4.4_revised

  • Brown, David

    HRL Laboratories, LLC.

    • 3.5.2023 Transfer and Implementation of AFRL 140nm Technology on 6-in GaN on SiC

      Wen Zhu, BAE Systems Inc
      David Brown, HRL Laboratories, LLC.
      Puneet Srivastava, BAE Systems Inc
      Kanin Chu, BAE Systems Inc

      3.5.2023_CS_MANTECH_2023_Zhu_final

  • Brown, Tom

    Skyworks Solutions, Inc.

    • 10.2.2023 Reduction in Scattered Particles Contamination in Inductively Coupled Plasma Etching Systems for High Volume High Yield Production

      Mohammadsadegh Beheshti, Skyworks Solutions Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.
      Tom Brown, Skyworks Solutions, Inc.

      10.2.2023 – Beheshti Paper

  • Brunner, Frank

    Ferdinand-Braun-Institut (FBH)

    • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

      Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut (FBH)
      Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
      Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
      Andreas Thies, Ferdinand-Braun-Institut
      J. Würfl, Ferdinand-Braun-Institut (FBH)
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)

      9.3.2023_Treidel

  • Brusaterra, Enrico

    Ferdinand-Braun-Institut (FBH)

    • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

      Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut (FBH)
      Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
      Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
      Andreas Thies, Ferdinand-Braun-Institut
      J. Würfl, Ferdinand-Braun-Institut (FBH)
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)

      9.3.2023_Treidel

  • Bryie, Randy

    Skyworks Solutions, Inc.

    • 5.3.2023 Integration of Nichrome Process as a Competitive Alternative to Tantalum Nitride for Thin Film Resistors in Compound Semiconductors

      Stephanie Y. Chang, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Lam Luu, Skyworks Solutions, Inc.
      Manohar Krishnappa, Skyworks Solutions, Inc.
      Randy Bryie, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

      5.3.2023_Chang

  • Burey, C.

    Yole Developpment

  • Burman, Tristan T.

    Cardiff University

    • 18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.

      Tristan T. Burman, Cardiff University
      Jash Patel, KLA Corporation
      Huma Ashraf, KLA Corporation (SPTS Division)
      Tarran Grange, KLA Corporation
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.08.2023 CS_MANTECH-FinalDraft-18-10

  • Carter, Andrew

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Castro, Aida J.

    Skyworks Solutions, Inc.

    • 10.1.2023 Mechanisms and Control of Photolithography Hotspots in Compound Semiconductor Manufacturing

      Mark J. Miller, Skyworks Solutions Inc.
      Marietta L. Balandan, Skyworks Solutions Inc.,
      Aida J. Castro, Skyworks Solutions, Inc.
      Lorain Ross, Skyworks Solutions, Inc.
      M. Arif Zeeshan, Skyworks Solutions Inc.

      10.1.2023 – Miller Paper

  • Chabak, Kelson

    Air Force Research Laboratory, Sensors Directorate

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Chang, J.

    Northrop Grumman Mission Center

  • Chang, Kuo-Jen

    National Chung-Shan Institute of Science and Technology

    • 18.16.2023 Electrical and Thermal Performance Analysis of AlGaN/GaN HEMT without Voltage-Blocking Buffer Layer Design

      Chong Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chia-Hao Liu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

      18.16.2023_Huang V1 with Marty edits all accepted

  • Chang, Stephanie Y.

    Skyworks Solutions, Inc.

    • 5.3.2023 Integration of Nichrome Process as a Competitive Alternative to Tantalum Nitride for Thin Film Resistors in Compound Semiconductors

      Stephanie Y. Chang, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Lam Luu, Skyworks Solutions, Inc.
      Manohar Krishnappa, Skyworks Solutions, Inc.
      Randy Bryie, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

      5.3.2023_Chang

  • Chao, Chien-Hsian

    Chang Gung University

    • 18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate

      Chien-Hsian Chao, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chong Rong Haung, Chang Gung University
      Chen Kang Chuang, Chang Gung University
      Yang Ching Ho, Chang Gung University

      18.10.2023 csmantech-Chao-FinalPaper

  • Chen, Chih-Tien

    National Chung-Shan Institute of Science and Technology

    • 18.16.2023 Electrical and Thermal Performance Analysis of AlGaN/GaN HEMT without Voltage-Blocking Buffer Layer Design

      Chong Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chia-Hao Liu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

      18.16.2023_Huang V1 with Marty edits all accepted

  • Chen, Kuan-Hua

    WIN Semiconductors Corp.

    • 18.9.2023 3-D Derived Structure Electromagnetic Simulation for Enhancement Mode Low Noise pHEMT Technology.

      Kuan-Hua Chen, WIN Semiconductors Corp.
      Shou-Hsien Weng, WIN Semiconductors Corp.
      Shih-Wei Chen, WIN Semiconductors Corp.
      Chi-Ming Lin, WIN Semiconductors Corp.
      Jia-Shyan Wu, WIN Semiconductors Corp.
      Chi-Hsiang Kuo, WIN Semiconductors Corp

      18.09.2023 Chen Final

  • Chen, Shih-Wei

    WIN Semiconductors Corp.

    • 18.9.2023 3-D Derived Structure Electromagnetic Simulation for Enhancement Mode Low Noise pHEMT Technology.

      Kuan-Hua Chen, WIN Semiconductors Corp.
      Shou-Hsien Weng, WIN Semiconductors Corp.
      Shih-Wei Chen, WIN Semiconductors Corp.
      Chi-Ming Lin, WIN Semiconductors Corp.
      Jia-Shyan Wu, WIN Semiconductors Corp.
      Chi-Hsiang Kuo, WIN Semiconductors Corp

      18.09.2023 Chen Final

  • Cheng, Hao-Tien

    National Taiwan University

    • 14.5.2023 Reliability assessment of HTOL stressed VCSELs with camera-based beam profilers

      Hao-Tien Cheng, National Taiwan University
      Taixian Zhang, LiVe Optronics
      Yun-Cheng Yang, National Taiwan University
      Te-Hua Liu, National Taiwan University
      Chao-Hsin Wu, National Taiwan University

      14.5.2023 Paper 14.5_CSMantech2023-AP-PP_v2

    • 16.4.2023 1.55 μm DFB Laser with ns-level pulses for LiDAR

      Te-Hua Liu, National Taiwan University
      Hong-Ye Lin, National Taiwan University
      Hao-Tien Cheng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University

      16.4.2023 LiDAR

  • Cheng, Kezia

    Skyworks Solutions Inc.

  • Chiang, Chao-Ching

    University of Florida, Gainesville, FL

    • 18.3.2023 Temperature Independence of Dynamic Switching in 4.8 A /3.6 kV NiO/β-Ga2O3 High Power Rectifiers

      Jian-Sian Li, University of Florida, Gainesville, FL
      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Cheng-Tse Tsai, University of Florida, Gainesville, FL
      Yu-Te Liao, University of Florida, Gainesville, FL
      Stephen Pearton, University of Florida

      18.3.2023_Li V2

    • 18.11.2023 Ionization Thresholds and Residue Removal in Inductively Coupled Etching of NiO/Ga2O3 with Ar and BCl3

      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Jian-Sian Li, University of Florida, Gainesville, FL
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida

      18.11.2023_Chiang

  • Chiu, Chao-Wei

    Chang Gung University

  • Chiu, Hsien-Chin

    Chang Gung University

    • 18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate

      Chien-Hsian Chao, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chong Rong Haung, Chang Gung University
      Chen Kang Chuang, Chang Gung University
      Yang Ching Ho, Chang Gung University

      18.10.2023 csmantech-Chao-FinalPaper

  • Chiu, P.

    Yole Developpement, France

  • Chou, Jih-Wen

    PSMC (8” Tech Dev Center)

  • Chowdhury, S.

    Stanford University, Stanford, CA; University of Bristol, Bristol, UK

    • 12.1.2023 Thermal management in GaN-devices for increased power density

      Mohamadali Malakoutian, Stanford University, Stanford, CA,
      Xiang Zheng, University of Bristol, Bristol
      Martin Kuball, University of Bristol
      S. Chowdhury, Stanford University, Stanford, CA; University of Bristol, Bristol, UK

      12.1.2023 Invited Talk_Srabanti Chowdhury_final

  • Chu, Kanin

    BAE Systems Inc

    • 3.5.2023 Transfer and Implementation of AFRL 140nm Technology on 6-in GaN on SiC

      Wen Zhu, BAE Systems Inc
      David Brown, HRL Laboratories, LLC.
      Puneet Srivastava, BAE Systems Inc
      Kanin Chu, BAE Systems Inc

      3.5.2023_CS_MANTECH_2023_Zhu_final

  • Chuang, Chen Kang

    Chang Gung University

    • 18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate

      Chien-Hsian Chao, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chong Rong Haung, Chang Gung University
      Chen Kang Chuang, Chang Gung University
      Yang Ching Ho, Chang Gung University

      18.10.2023 csmantech-Chao-FinalPaper

  • Chuang, Yen-Ling

    PSMC (Fab 8B)

  • Chudzik , Michael

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Clark, Andrew

    IQE, Cardiff, UK

    • 14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates

      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      Mukul Debnath, IQE plc
      Andrew Clark, IQE, Cardiff, UK
      Peter M. Smowton, Cardiff University, IQE plc

      14.2.2023 CS_MANTECH-2023_14.2_Final

  • Coll, P. Guimerá

    Crystal Sonic Inc.

  • Correia, Stelio

    OSRAM Group, Regensburg, Germany

    • 3.1.2023 Plasma Dicing of thin-film LEDs

      Heribert Zull, OSRAM Group, Regensburg, Germany
      Mahsa Norouzi Kalkani, OSRAM Group, Regensburg, Germany
      Stelio Correia, OSRAM Group, Regensburg, Germany
      Mathias Kaempf, OSRAM Group, Regensburg, Germany
      Martin Strassburg, OSRAM Group, Regensburg, Germany

      3.1.2023_CS_MANTECH_2023_Zull

  • Cowles, John

    Analog Devices

  • Crespo, Antonio

    Air Force Research Laboratory, Sensors Directorate

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Crobu, Carla

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Crum, Darren

    Naval Surface Warfare Center Crane

  • D. Martin, Quinn

    MACOM Technology Solutions

  • Darras, François-Xavier

    SOITEC

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Davies, J. Iwan

    IQE plc

    • 18.4.2023 Characterisation Techniques for On-Wafer Testing of VCSELs in Volume Manufacture

      Jack Baker, Cardiff University
      C. Hentschel, Cardiff University
      Craig Allford, Cardiff University
      Sara Gillgrass, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.04.2023_Extended Abstract_R1_Compressed

  • Debnath, Mukul

    IQE plc

    • 14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates

      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      Mukul Debnath, IQE plc
      Andrew Clark, IQE, Cardiff, UK
      Peter M. Smowton, Cardiff University, IQE plc

      14.2.2023 CS_MANTECH-2023_14.2_Final

  • Decobert, Jean

    III-V Lab

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Decoutere, Stefaan

    Imec, Leuven, Belgium

  • Denis, P.

    United Monolithic Semiconductors – GmbH

  • Derksema, Bas

    Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Di Nardo, Christine

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Dodson, G.

    Kyma Technologies

    • 11.1.2023 HVPE-Based Gallium Oxide Epiwafer Development

      J.H. Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      G. Dodson, Kyma Technologies
      H.A. Splawn, Kyma Technologies, Inc.

      11.1.2023_Leach_2023_CSMANTECH_Paper_FINAL

  • Dogmus, E.

    Yole Developpement, France

  • DOGMUS, Ezgi

    Yole Développement

  • Downey, Brian

    US Naval Research Laboratory

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

  • Dryden, Daniel M.

    KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

  • Ebrahimi, Nercy

    Skyworks Solution Inc.

    • 10.2.2023 Reduction in Scattered Particles Contamination in Inductively Coupled Plasma Etching Systems for High Volume High Yield Production

      Mohammadsadegh Beheshti, Skyworks Solutions Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.
      Tom Brown, Skyworks Solutions, Inc.

      10.2.2023 – Beheshti Paper

  • Ebrish, Mona

    NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

  • Ebrish, Mona

    Vanderbilt University, Nashville, TN

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

  • Espenhahn, Leah

    University of Illinois at Urbana-Champaign

    • 14.3.2023 Silicon Anti-Phase Optical Coatings for High-Power, Single-Mode Operation in Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Leah Espenhahn, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      John M Dallesasse, University of Illinois at Urbana-Champaign

      14.3.2023 CSMANTECH-2023-Kevin-Pikul-Extended-Abstract

  • Fahle, D.

    AIXTRON SE Germany

  • Fang, Ricky

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Faria, Mario

    Tignis, Inc.

  • Feng, Milton

    University of Illinois, Urbana-Champaign

    • 14.4.2023 Developing Single-Mode VCSEL for Extending High-Speed PAM4 Transmitting Distance in SMF-28 Fiber Up to 1 km and 70 °C

      Haonan Wu, University of Illinois at Urbana-Champaign
      Dufei Wu, University of Illinois at Urbana Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois, Urbana-Champaign

      14.4.2023 Wu

  • Feygelson, Boris

    U.S. Naval Research Laboratory

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Feygelson, Tatyana

    U. S. Naval Research Laboratory

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Feygelson, Tatyana I.

    American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Fidler, Tamara

    Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Flemish, Joseph

    Lumileds LLC

    • 16.1.2023 Technical and Manufacturing Challenges in MicroLED Processes

      Hee Jin Kim, Lumileds LLC
      Rob Armitage, Lumileds LLC
      Joseph Flemish, Lumileds LLC
      Zhongmin Ren, Lumileds LLC
      Mark Holmes, Lumileds LLC

      16.1.2023_Kim_MicroLED Processes

  • Foster, Geoffrey

    Jacobs Inc., Washington DC

    • 18.15.2023 Characterization of Optically Modulated Semi-Insulating GaN Photoconductive Semiconductor Switches

      Geoffrey Foster, Jacobs Inc., Washington DC
      Andrew Koehler, U. S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Sadab Mahmud, University of Toledo, Toledo OH
      Samuel Atwimah, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory

      18.15.2023 Foster – CSMANTECH2023 v2

  • Fournel, Frank

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Fujita, S.

    Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Fukunaga, H.

    FRIS, Tohoku University

    • 8.5.2023 Atomic Diffusion Bonding Using AlN and Al2O3 Films

      T. Saito, Canon ANELVA Corporation
      H. Makita, Canon ANELVA Corporation
      Y. Suzuki, Canon ANELVA Corporation
      Y. Kozuka, Canon ANELVA Corporation
      A. Muraoka, Canon ANELVA Corporation
      H. Fukunaga, FRIS, Tohoku University
      M. Uomoto, FRIS, Tohoku University
      T. Shimatsu, FRIS, Tohoku University

      8.5.2023 Extended abstract Saito Canon ALNELVA_final ver

  • Gabette, Laurence

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Gallagher, James

    U.S. Naval Research Laboratory

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

  • Gallagher, James

    ASEE Postdoctoral Fellow Residing at NRL

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

  • Gao, Z.

    AIXTRON SE

  • Gedzberg, G.

    Coherent Corp.

  • Georgiev, Daniel G.

    University of Toledo, Toledo OH

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • Ghorbel, V. Aymen

    Yole Developpment

  • Ghyselen, Bruno

    SOITEC

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Gillgrass, Sara

    Cardiff University

    • 14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates

      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      Mukul Debnath, IQE plc
      Andrew Clark, IQE, Cardiff, UK
      Peter M. Smowton, Cardiff University, IQE plc

      14.2.2023 CS_MANTECH-2023_14.2_Final

    • 18.4.2023 Characterisation Techniques for On-Wafer Testing of VCSELs in Volume Manufacture

      Jack Baker, Cardiff University
      C. Hentschel, Cardiff University
      Craig Allford, Cardiff University
      Sara Gillgrass, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.04.2023_Extended Abstract_R1_Compressed

  • Grange, Tarran

    KLA Corporation

    • 18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.

      Tristan T. Burman, Cardiff University
      Jash Patel, KLA Corporation
      Huma Ashraf, KLA Corporation (SPTS Division)
      Tarran Grange, KLA Corporation
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.08.2023 CS_MANTECH-FinalDraft-18-10

  • Grisafe, G.

    Northrop Grumman Mission Center

  • Grupen, Matt

    Air Force Research Laboratory, Sensors Directorate

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Gunning, Brendan. P.

    Sandia National Labs, Albuquerque, NM

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

  • Hagi, Yoshiaki

    Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Hahn, H.

    AIXTRON SE

  • Hara, K.

    Hamamatsu Photonics K.K

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Hashio, K.

    Sumiden Semiconductor Materials Co., Ltd.,

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Hasnine, Md

    Qorvo Inc

    • 18.6.2023 The Application of High-Volume Manufacturing Heterogeneous Packaging Technology to Simplify Highly Complex Systems

      D. Robertson, Qorvo Inc
      Md Hasnine, Qorvo Inc
      G. Kent, Qorvo Inc
      N. Salazar, Qorvo Inc
      B. Rosario, Qorvo Inc
      S. Morris, Qorvo Inc

      18.06.2023-CS_MANTECH-DR_FinalPaper

  • Hassan, A.

    COHERENT - INNOViON

    • 5.1.2023 Isolation in Compound Semiconductors and the Risk of Neutron Generation with Implantation of Light Ions

      J. A. Turcaud, Coherent Corp.
      C. Heckman, COHERENT - INNOViON
      V. Heckman, COHERENT - INNOViON
      A. Hassan, COHERENT - INNOViON
      R. Pong, COHERENT - INNOViON
      J. Schuur, Coherent Corp.

      5.1.2023_Turcaud_Neutron_TALK_CS_Mantech_2023_v3

  • Haung, Chong Rong

    Chang Gung University

    • 18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate

      Chien-Hsian Chao, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chong Rong Haung, Chang Gung University
      Chen Kang Chuang, Chang Gung University
      Yang Ching Ho, Chang Gung University

      18.10.2023 csmantech-Chao-FinalPaper

  • Hawke, Joshua

    Naval Surface Warfare Center Crane

  • Heckman, C.

    COHERENT - INNOViON

    • 5.1.2023 Isolation in Compound Semiconductors and the Risk of Neutron Generation with Implantation of Light Ions

      J. A. Turcaud, Coherent Corp.
      C. Heckman, COHERENT - INNOViON
      V. Heckman, COHERENT - INNOViON
      A. Hassan, COHERENT - INNOViON
      R. Pong, COHERENT - INNOViON
      J. Schuur, Coherent Corp.

      5.1.2023_Turcaud_Neutron_TALK_CS_Mantech_2023_v3

  • Heckman, V.

    COHERENT - INNOViON

    • 5.1.2023 Isolation in Compound Semiconductors and the Risk of Neutron Generation with Implantation of Light Ions

      J. A. Turcaud, Coherent Corp.
      C. Heckman, COHERENT - INNOViON
      V. Heckman, COHERENT - INNOViON
      A. Hassan, COHERENT - INNOViON
      R. Pong, COHERENT - INNOViON
      J. Schuur, Coherent Corp.

      5.1.2023_Turcaud_Neutron_TALK_CS_Mantech_2023_v3

  • Hendricks, Nolan S.

    Air Force Research Laboratory, Sensors Directorate

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

  • Hentschel, C.

    Cardiff University

    • 18.4.2023 Characterisation Techniques for On-Wafer Testing of VCSELs in Volume Manufacture

      Jack Baker, Cardiff University
      C. Hentschel, Cardiff University
      Craig Allford, Cardiff University
      Sara Gillgrass, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.04.2023_Extended Abstract_R1_Compressed

  • Herlocker, Jonathan L.

    Tignis, Inc.

    • 10.4.2023 Learnings from Multiple Implementations of Closed Loop AI/ML Controllers for Semiconductor Manufacturing

      Francis A. Ortega, Tignis, Inc.
      Eric Holzer, Tignis, Inc.
      Mario Faria, Tignis, Inc.
      Jonathan L. Herlocker, Tignis, Inc.

      10.4.2023_Tignis_final

  • Hilt, Oliver

    Ferdinand-Braun-Institut (FBH)

    • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

      Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut (FBH)
      Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
      Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
      Andreas Thies, Ferdinand-Braun-Institut
      J. Würfl, Ferdinand-Braun-Institut (FBH)
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)

      9.3.2023_Treidel

  • Hite, Jennifer

    U.S. Naval Research Laboratory

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • Ho, Yang Ching

    Chang Gung University

    • 18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate

      Chien-Hsian Chao, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chong Rong Haung, Chang Gung University
      Chen Kang Chuang, Chang Gung University
      Yang Ching Ho, Chang Gung University

      18.10.2023 csmantech-Chao-FinalPaper

  • Hobart, Karl D.

    U.S. Naval Research Laboratory

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

    • 15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications

      Matthew Landi, University of Illinois at Urbana-Champaign
      Frank Kelly, University of Illinois at Urbana-Champaign
      Riley Vesto, University of Illinois at Urbana-Champaign
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Kyekyoon Kim, University of Illinois at Urbana-Champaign

      15.3.2023_Landi-KK_CSMantech2023_ExtendedAbstract_CharacterizationOfNitridatedGa2O3

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

    • 18.15.2023 Characterization of Optically Modulated Semi-Insulating GaN Photoconductive Semiconductor Switches

      Geoffrey Foster, Jacobs Inc., Washington DC
      Andrew Koehler, U. S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Sadab Mahmud, University of Toledo, Toledo OH
      Samuel Atwimah, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory

      18.15.2023 Foster – CSMANTECH2023 v2

  • Hohlfeld, Olaf

    Infineon Technologies AG

  • Holmes, Mark

    Lumileds LLC

    • 16.1.2023 Technical and Manufacturing Challenges in MicroLED Processes

      Hee Jin Kim, Lumileds LLC
      Rob Armitage, Lumileds LLC
      Joseph Flemish, Lumileds LLC
      Zhongmin Ren, Lumileds LLC
      Mark Holmes, Lumileds LLC

      16.1.2023_Kim_MicroLED Processes

  • Holzer, Eric

    Tignis, Inc.

    • 10.4.2023 Learnings from Multiple Implementations of Closed Loop AI/ML Controllers for Semiconductor Manufacturing

      Francis A. Ortega, Tignis, Inc.
      Eric Holzer, Tignis, Inc.
      Mario Faria, Tignis, Inc.
      Jonathan L. Herlocker, Tignis, Inc.

      10.4.2023_Tignis_final

  • Honda, Yoshio

    Institute of Materials and Systems for Sustainability, Nagoya University

  • Hong, Samphy

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Howell, R.

    Northrop Grumman (MS), Linthicum, MD

  • Hsu, Jia-Wei

    PSMC (Fab 8B)

  • Hsu, Ming-Zheng

    Fab Epi, Win Semiconductors Corp.

    • 17.3.2023 MOCVD 8 inches GaAs HBT Manufacture Evaluation

      Tzu-Wei Tseng, Fab Epi, Win Semiconductors Corp.
      Ching-Che Hung, Fab Epi, Win Semiconductors Corp.
      Po-Lun Tseng, Fab Epi, Win Semiconductors Corp.
      Ming-Zheng Hsu, Fab Epi, Win Semiconductors Corp.

      17.3.2023_Tseng_WIN_extended_abstract_final

  • Huang, Chong Rong

    Chang Gung University

    • 18.16.2023 Electrical and Thermal Performance Analysis of AlGaN/GaN HEMT without Voltage-Blocking Buffer Layer Design

      Chong Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chia-Hao Liu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

      18.16.2023_Huang V1 with Marty edits all accepted

  • Hugger, Alexander

    United Monolithic Semiconductors GmbH, Ulm

  • Hughes, Gary

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Hung, Ching-Che

    Fab Epi, Win Semiconductors Corp.

    • 17.3.2023 MOCVD 8 inches GaAs HBT Manufacture Evaluation

      Tzu-Wei Tseng, Fab Epi, Win Semiconductors Corp.
      Ching-Che Hung, Fab Epi, Win Semiconductors Corp.
      Po-Lun Tseng, Fab Epi, Win Semiconductors Corp.
      Ming-Zheng Hsu, Fab Epi, Win Semiconductors Corp.

      17.3.2023_Tseng_WIN_extended_abstract_final

  • Hwang, Robin Chistine

    PSMC (8” Tech Dev Center)

  • Islam, Ahmad

    Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Ito, Taichi

    Precious Metals Materials Division, Matsuda Sangyo Co., Ltd.

  • J Meyer, David

    U.S. Naval Research Laboratory, Washington, DC

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

  • J. Green, Andrew

    Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

  • Jacobs, Alan

    U.S. Naval Research Laboratory

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • Jaffal, Ali

    Yole Group

  • Jalan, Bharat

    University of Minnesota, Minneapolis, MN 55455, USA

    • 7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate

      Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USA
      Fengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Bharat Jalan, University of Minnesota, Minneapolis, MN 55455, USA
      Steven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA

      7.2.2023 Csmantech_Manuscript_Final_PrakashPS

  • Jeon, Hyung Min

    KBR Inc.,

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

  • Jin, Jinman

    Wavice Inc.

  • Jin Kim, Hee

    Lumileds LLC

    • 16.1.2023 Technical and Manufacturing Challenges in MicroLED Processes

      Hee Jin Kim, Lumileds LLC
      Rob Armitage, Lumileds LLC
      Joseph Flemish, Lumileds LLC
      Zhongmin Ren, Lumileds LLC
      Mark Holmes, Lumileds LLC

      16.1.2023_Kim_MicroLED Processes

  • Jo, Hyeon-Bhin

    School of Electronic and Electrical Engineering, Kyungpook National University

    • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

      In-Geun Lee, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      2.5,2023_Lee_Final_Paper

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Josse, E.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Jung, Hyeyoung

    Wavice Inc.,

    • 4.3.2023 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs on HPSI SiC Substrate

      Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
      Jinman Jin, Wavice Inc.
      Inseop Kim, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
      Seo Koo, Soonchunhyang University, Korea
      Dal Ahn, Soonchunhyang University, Korea

      4.3.2023 CS_MANTECH_2023_Sangmin_Lee_Wavice_paper_4.3

  • K. Hite, Jennifer

    Naval Research Laboratory

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • K. Tiku, Shiban

    Skyworks Solutions, Inc.

  • Kaempf, Mathias

    OSRAM Group, Regensburg, Germany

    • 3.1.2023 Plasma Dicing of thin-film LEDs

      Heribert Zull, OSRAM Group, Regensburg, Germany
      Mahsa Norouzi Kalkani, OSRAM Group, Regensburg, Germany
      Stelio Correia, OSRAM Group, Regensburg, Germany
      Mathias Kaempf, OSRAM Group, Regensburg, Germany
      Martin Strassburg, OSRAM Group, Regensburg, Germany

      3.1.2023_CS_MANTECH_2023_Zull

  • Kalra, Nitin

    BAE Systems

  • Kanemura, T.

    Institute of Materials and Systems for Sustainability, Nagoya University

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Kang, Gyuhyeok

    Kumoh National Institute of Technology

    • 18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage

      Yeongeun Park, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Chaeyun Kim, Kumoh National Institute of Technology
      Gyuhyeok Kang, Kumoh National Institute of Technology
      Ogyun Seok, Kumoh National Institute of Technology

      18.13.2023 Park_v2 final

  • Kao, Hsuan-Ling

    Chang Gung University,

  • Kaplar, Robert

    Sandia National Labs, Albuquerque, NM

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

      James Gallagher, U.S. Naval Research Laboratory
      Michael A. Mastro, U.S. Naval Research Laboratory
      Mona Ebrish, Vanderbilt University, Nashville, TN
      Alan Jacobs, U.S. Naval Research Laboratory
      Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
      Robert Kaplar, Sandia National Labs, Albuquerque, NM

      10.5.2023_Gallagher

  • Kashyap, A.

    Renesas Electronics America, CA, USA

  • Kawaguchi, D.

    Hamamatsu Photonics K.K

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Kelly, Frank

    University of Illinois at Urbana-Champaign

    • 15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications

      Matthew Landi, University of Illinois at Urbana-Champaign
      Frank Kelly, University of Illinois at Urbana-Champaign
      Riley Vesto, University of Illinois at Urbana-Champaign
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Kyekyoon Kim, University of Illinois at Urbana-Champaign

      15.3.2023_Landi-KK_CSMantech2023_ExtendedAbstract_CharacterizationOfNitridatedGa2O3

  • Kent, G.

    Qorvo Inc

    • 18.6.2023 The Application of High-Volume Manufacturing Heterogeneous Packaging Technology to Simplify Highly Complex Systems

      D. Robertson, Qorvo Inc
      Md Hasnine, Qorvo Inc
      G. Kent, Qorvo Inc
      N. Salazar, Qorvo Inc
      B. Rosario, Qorvo Inc
      S. Morris, Qorvo Inc

      18.06.2023-CS_MANTECH-DR_FinalPaper

  • Khanna, Raghav

    University of Toledo, Toledo OH

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

    • 18.15.2023 Characterization of Optically Modulated Semi-Insulating GaN Photoconductive Semiconductor Switches

      Geoffrey Foster, Jacobs Inc., Washington DC
      Andrew Koehler, U. S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Sadab Mahmud, University of Toledo, Toledo OH
      Samuel Atwimah, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory

      18.15.2023 Foster – CSMANTECH2023 v2

  • Kim, Chaeyun

    Kumoh National Institute of Technology

    • 12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs

      Chaeyun Kim, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Yeongeun Park, Kumoh National Institute of Technology
      Dong-Seok Kim, Korea Atomic Energy Research Institute, Republic of Korea
      Ogyun Seok, Kumoh National Institute of Technology

      12.4.2023 CS_MANTECH-Full-Paper_edited

    • 18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage

      Yeongeun Park, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Chaeyun Kim, Kumoh National Institute of Technology
      Gyuhyeok Kang, Kumoh National Institute of Technology
      Ogyun Seok, Kumoh National Institute of Technology

      18.13.2023 Park_v2 final

  • Kim, Dae-Hyun

    Kyungpook National University

    • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

      In-Geun Lee, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      2.5,2023_Lee_Final_Paper

    • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jae-Hak Lee, Kyungpook National University
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      In-Geun Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.12.2023_CS_MANTECH_Full_Paper_JHY_

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Kim, Dong-Seok

    Korea Atomic Energy Research Institute, Republic of Korea

    • 12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs

      Chaeyun Kim, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Yeongeun Park, Kumoh National Institute of Technology
      Dong-Seok Kim, Korea Atomic Energy Research Institute, Republic of Korea
      Ogyun Seok, Kumoh National Institute of Technology

      12.4.2023 CS_MANTECH-Full-Paper_edited

  • Kim, Dongyoung

    University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering

    • 12.5.2023 Short-circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs under Different Drain Voltages

      Dongyoung Kim, University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering
      Woongje Sung, University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering

      12.5.2023 CS_MANTECH-Final-Paper-Dongyoung Kim

  • Kim, Hyo-Jin

    Kyungpook National University

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Kim, Inseop

    Wavice Inc.,

    • 4.3.2023 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs on HPSI SiC Substrate

      Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
      Jinman Jin, Wavice Inc.
      Inseop Kim, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
      Seo Koo, Soonchunhyang University, Korea
      Dal Ahn, Soonchunhyang University, Korea

      4.3.2023 CS_MANTECH_2023_Sangmin_Lee_Wavice_paper_4.3

  • Kim, Kyekyoon

    University of Illinois at Urbana-Champaign

    • 15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications

      Matthew Landi, University of Illinois at Urbana-Champaign
      Frank Kelly, University of Illinois at Urbana-Champaign
      Riley Vesto, University of Illinois at Urbana-Champaign
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Kyekyoon Kim, University of Illinois at Urbana-Champaign

      15.3.2023_Landi-KK_CSMantech2023_ExtendedAbstract_CharacterizationOfNitridatedGa2O3

  • Kim, Sang-Kuk

    QSI, Cheon-An, Kyunggi-do, 31044, South Korea

    • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jae-Hak Lee, Kyungpook National University
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      In-Geun Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.12.2023_CS_MANTECH_Full_Paper_JHY_

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Kim, Tae-Woo

    University of Ulsan, Ulsan, South Korea

    • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

      In-Geun Lee, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      2.5,2023_Lee_Final_Paper

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Kim, Ted

    QSI

    • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

      In-Geun Lee, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      2.5,2023_Lee_Final_Paper

    • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jae-Hak Lee, Kyungpook National University
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      In-Geun Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.12.2023_CS_MANTECH_Full_Paper_JHY_

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Kim, Yong-Hyun

    QSI, Cheon-An, Kyunggi-do, 31044, South Korea

    • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jae-Hak Lee, Kyungpook National University
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      In-Geun Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.12.2023_CS_MANTECH_Full_Paper_JHY_

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • King, Casey

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Kitajima, S.

    Sumitomo Electric Device Innovations, Japan

  • Kodera, Kiyofumi

    Precious Metals Materials Division, Matsuda Sangyo Co., Ltd.

  • Koehler, Andrew

    U. S. Naval Research Laboratory

    • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

      Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut (FBH)
      Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
      Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
      Andreas Thies, Ferdinand-Braun-Institut
      J. Würfl, Ferdinand-Braun-Institut (FBH)
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)

      9.3.2023_Treidel

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

  • Koester, Steven J.

    University of Minnesota, Minneapolis, MN 55455, USA

    • 7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate

      Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USA
      Fengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Bharat Jalan, University of Minnesota, Minneapolis, MN 55455, USA
      Steven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA

      7.2.2023 Csmantech_Manuscript_Final_PrakashPS

  • Kong, Gary

    Innoscience America, Santa Clara, United States

    • 6.2.2023 How to get GaN power devices into mainstream, high volume power management applications?

      Jan Šonský, Innoscience Europe, Philipssite 5b1, Leuven, Belgium
      Thomas Zhao, Innoscience, Zhuhai, Guangdong Province, P.R. China
      Gary Kong, Innoscience America, Santa Clara, United States
      David Zhou, Innoscience, Suzhou, Jiangsu Province, P.R. China
      Felix Wang, Innoscience, Zhuhai, Guangdong Province, P.R. China

      6.2-Sonsky_2023_CSMantech_Paper6.2

  • Koo, Seo

    Soonchunhyang University, Korea

    • 4.3.2023 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs on HPSI SiC Substrate

      Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
      Jinman Jin, Wavice Inc.
      Inseop Kim, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
      Seo Koo, Soonchunhyang University, Korea
      Dal Ahn, Soonchunhyang University, Korea

      4.3.2023 CS_MANTECH_2023_Sangmin_Lee_Wavice_paper_4.3

  • Kosaka, T.

    Sumitomo Electric Device Innovations, Japan

  • Kozuka, Y.

    Canon ANELVA Corporation

    • 8.5.2023 Atomic Diffusion Bonding Using AlN and Al2O3 Films

      T. Saito, Canon ANELVA Corporation
      H. Makita, Canon ANELVA Corporation
      Y. Suzuki, Canon ANELVA Corporation
      Y. Kozuka, Canon ANELVA Corporation
      A. Muraoka, Canon ANELVA Corporation
      H. Fukunaga, FRIS, Tohoku University
      M. Uomoto, FRIS, Tohoku University
      T. Shimatsu, FRIS, Tohoku University

      8.5.2023 Extended abstract Saito Canon ALNELVA_final ver

  • Kraman, Mark

    University of Illinois Urbana-Champagne

    • 14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates

      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      Mukul Debnath, IQE plc
      Andrew Clark, IQE, Cardiff, UK
      Peter M. Smowton, Cardiff University, IQE plc

      14.2.2023 CS_MANTECH-2023_14.2_Final

  • Krause, Stephen

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Krishnappa, Manohar

    Skyworks Solutions, Inc.

    • 5.3.2023 Integration of Nichrome Process as a Competitive Alternative to Tantalum Nitride for Thin Film Resistors in Compound Semiconductors

      Stephanie Y. Chang, Skyworks Solutions, Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Lam Luu, Skyworks Solutions, Inc.
      Manohar Krishnappa, Skyworks Solutions, Inc.
      Randy Bryie, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.

      5.3.2023_Chang

  • Krueger, Olaf

    Ferdinand-Braun-Institut (FBH)

    • 10.3.2023 Optimization of Iridium RF-Sputter Process for AlGaN/GaN-based HEMT Gate Technology

      I. Ostermay, Ferdinand-Braun-Institut (FBH)
      Sten Seifert, Ferdinand-Braun-Institut (FBH)
      Olaf Krueger, Ferdinand-Braun-Institut (FBH)

      10.3.2023 Ostermay final

  • Kuball, Martin

    University of Bristol

    • 4.4.2023 Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs

      Terirama Thingujam, University of Bristol
      Michael J Uren, University of Bristol
      Niklas Rorsman, Chalmers University of Technology
      Matthew Smith, University of Bristol
      Andrew Barnes, European Space Agency
      Michele Brondi, Akkodis for European Space Agency (ESA)
      Martin Kuball, University of Bristol

      4.4.2023 CS_MANTECH_2023_Terirama_Thingujam_UofBristol_paper_4.4_revised

    • 12.3.2023 Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly

      Zeina Abdallah, University of Bristol
      James Pomeroy, University of Bristol
      Nicolas Blasakis, Adamant Composite Ltd.
      Athanasios Baltopoulos, Adamant Composite Ltd.
      Antonios Vavouliotis, Adamant Composite Ltd.
      Martin Kuball, University of Bristol

      12.3.2023 CS_MANTECH_2023_final_Zeina_Abdallah

    • 15.2.2023 Selective Area Growth of B-Ga2O3

      Arpit Nandi, University of Bristol
      Indraneel Sanyal, University of Bristol
      Martin Kuball, University of Bristol

      15.2.2023_SAG of Ga2O3_Arpit Nandi_CDTR -W_Rev1

  • Kuo, Chi-Hsiang

    WIN Semiconductors Corp

    • 18.9.2023 3-D Derived Structure Electromagnetic Simulation for Enhancement Mode Low Noise pHEMT Technology.

      Kuan-Hua Chen, WIN Semiconductors Corp.
      Shou-Hsien Weng, WIN Semiconductors Corp.
      Shih-Wei Chen, WIN Semiconductors Corp.
      Chi-Ming Lin, WIN Semiconductors Corp.
      Jia-Shyan Wu, WIN Semiconductors Corp.
      Chi-Hsiang Kuo, WIN Semiconductors Corp

      18.09.2023 Chen Final

  • Kuramata, A.

    Novel Crystal Technology, Inc

    • 7.1.2023 β-Ga2O3 Crystal Growth and Device Processing

      A. Kuramata, Novel Crystal Technology, Inc
      Kohei Sasaki, Novel Crystal Technology

      7.1.2023 CS_MANTECH-Final-Paper–Dec-2023_NCT221012

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Kuramata, Akito

    Novel Crystal Technology, Inc

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Lagowski, J.

    Semilab SDI

  • Landi, Matthew

    University of Illinois at Urbana-Champaign

    • 15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications

      Matthew Landi, University of Illinois at Urbana-Champaign
      Frank Kelly, University of Illinois at Urbana-Champaign
      Riley Vesto, University of Illinois at Urbana-Champaign
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Kyekyoon Kim, University of Illinois at Urbana-Champaign

      15.3.2023_Landi-KK_CSMantech2023_ExtendedAbstract_CharacterizationOfNitridatedGa2O3

  • Leach, J.H.

    Kyma Technologies

    • 11.1.2023 HVPE-Based Gallium Oxide Epiwafer Development

      J.H. Leach, Kyma Technologies
      Kevin Udwary, Kyma Technologies
      G. Dodson, Kyma Technologies
      H.A. Splawn, Kyma Technologies, Inc.

      11.1.2023_Leach_2023_CSMANTECH_Paper_FINAL

  • Lee, Hanwool

    KBR Inc.

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Lee, In-Geun

    Kyungpook National University

    • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jae-Hak Lee, Kyungpook National University
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      In-Geun Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.12.2023_CS_MANTECH_Full_Paper_JHY_

  • Lee, Jae-Hak

    Kyungpook National University

    • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

      In-Geun Lee, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      2.5,2023_Lee_Final_Paper

    • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jae-Hak Lee, Kyungpook National University
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      In-Geun Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.12.2023_CS_MANTECH_Full_Paper_JHY_

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Lee, Joseph

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Lee, Sangmin

    Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA

    • 4.3.2023 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs on HPSI SiC Substrate

      Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
      Jinman Jin, Wavice Inc.
      Inseop Kim, Wavice Inc.,
      Hyeyoung Jung, Wavice Inc.,
      Seo Koo, Soonchunhyang University, Korea
      Dal Ahn, Soonchunhyang University, Korea

      4.3.2023 CS_MANTECH_2023_Sangmin_Lee_Wavice_paper_4.3

  • Leedy, Kevin

    Air Force Research Laboratory, Sensors Directorate

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

  • Li, Jian-Sian

    University of Florida, Gainesville, FL

    • 18.3.2023 Temperature Independence of Dynamic Switching in 4.8 A /3.6 kV NiO/β-Ga2O3 High Power Rectifiers

      Jian-Sian Li, University of Florida, Gainesville, FL
      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Cheng-Tse Tsai, University of Florida, Gainesville, FL
      Yu-Te Liao, University of Florida, Gainesville, FL
      Stephen Pearton, University of Florida

      18.3.2023_Li V2

    • 18.11.2023 Ionization Thresholds and Residue Removal in Inductively Coupled Etching of NiO/Ga2O3 with Ar and BCl3

      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Jian-Sian Li, University of Florida, Gainesville, FL
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida

      18.11.2023_Chiang

  • Li, Yun-Li (Charles)

    PlayNitride Display Co.

    • 16.2.2023 Manufacturing MicroLED Display by PixeLED Solution

      Ying-Tsang Liu, PlayNitride Display Co.
      Yun-Li (Charles) Li, PlayNitride Display Co.

      16.2.2023_Li_PlayNitride-Edited

  • Liao, Pai-Ying

    Purdue University

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Liao, Yu-Te

    University of Florida, Gainesville, FL

    • 18.3.2023 Temperature Independence of Dynamic Switching in 4.8 A /3.6 kV NiO/β-Ga2O3 High Power Rectifiers

      Jian-Sian Li, University of Florida, Gainesville, FL
      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Cheng-Tse Tsai, University of Florida, Gainesville, FL
      Yu-Te Liao, University of Florida, Gainesville, FL
      Stephen Pearton, University of Florida

      18.3.2023_Li V2

  • Liddy, Kyle

    Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Liddy, Kyle

    Air Force Research Laboratory

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Lin, Chi-Ming

    WIN Semiconductors Corp.

    • 18.9.2023 3-D Derived Structure Electromagnetic Simulation for Enhancement Mode Low Noise pHEMT Technology.

      Kuan-Hua Chen, WIN Semiconductors Corp.
      Shou-Hsien Weng, WIN Semiconductors Corp.
      Shih-Wei Chen, WIN Semiconductors Corp.
      Chi-Ming Lin, WIN Semiconductors Corp.
      Jia-Shyan Wu, WIN Semiconductors Corp.
      Chi-Hsiang Kuo, WIN Semiconductors Corp

      18.09.2023 Chen Final

  • Lin, Hong-Ye

    National Taiwan University

    • 16.4.2023 1.55 μm DFB Laser with ns-level pulses for LiDAR

      Te-Hua Liu, National Taiwan University
      Hong-Ye Lin, National Taiwan University
      Hao-Tien Cheng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University

      16.4.2023 LiDAR

  • Liu, Chia-Hao

    Chang Gung University

    • 18.16.2023 Electrical and Thermal Performance Analysis of AlGaN/GaN HEMT without Voltage-Blocking Buffer Layer Design

      Chong Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chia-Hao Liu, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

      18.16.2023_Huang V1 with Marty edits all accepted

  • Liu, Fengdeng

    University of Minnesota, Minneapolis, MN 55455, USA

    • 7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate

      Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USA
      Fengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Bharat Jalan, University of Minnesota, Minneapolis, MN 55455, USA
      Steven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA

      7.2.2023 Csmantech_Manuscript_Final_PrakashPS

  • Liu, Te-Hua

    National Taiwan University

    • 14.5.2023 Reliability assessment of HTOL stressed VCSELs with camera-based beam profilers

      Hao-Tien Cheng, National Taiwan University
      Taixian Zhang, LiVe Optronics
      Yun-Cheng Yang, National Taiwan University
      Te-Hua Liu, National Taiwan University
      Chao-Hsin Wu, National Taiwan University

      14.5.2023 Paper 14.5_CSMantech2023-AP-PP_v2

  • Liu, Ying-Tsang

    PlayNitride Display Co.

    • 16.2.2023 Manufacturing MicroLED Display by PixeLED Solution

      Ying-Tsang Liu, PlayNitride Display Co.
      Yun-Li (Charles) Li, PlayNitride Display Co.

      16.2.2023_Li_PlayNitride-Edited

  • Lowery, Andy

    Epirus, Inc.

  • Lundh, James Spencer

    National Research Council Postdoctoral Fellow, Residing at NRL

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

  • Luu, Lam

    Skyworks Solutions, Inc.

  • M Dallesasse, John

    University of Illinois at Urbana-Champaign

    • 14.3.2023 Silicon Anti-Phase Optical Coatings for High-Power, Single-Mode Operation in Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Leah Espenhahn, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      John M Dallesasse, University of Illinois at Urbana-Champaign

      14.3.2023 CSMANTECH-2023-Kevin-Pikul-Extended-Abstract

  • Mack, Shawn

    U.S. Naval Research Laboratory

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

  • Madel, Manfred

    United Monolithic Semiconductors GmbH

  • Mahadik, N.

    U.S. Naval Research Laboratory

    • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory
      Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
      James Gallagher, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Jennifer K. Hite, Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Robert Kaplar, Sandia National Labs, Albuquerque, NM
      O. Aktas, Sandia National Labs, Albuquerque, NM

      9.4.2023_Anderson

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

  • Mahmud, Sadab

    University of Toledo, Toledo OH

    • 18.15.2023 Characterization of Optically Modulated Semi-Insulating GaN Photoconductive Semiconductor Switches

      Geoffrey Foster, Jacobs Inc., Washington DC
      Andrew Koehler, U. S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Sadab Mahmud, University of Toledo, Toledo OH
      Samuel Atwimah, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory

      18.15.2023 Foster – CSMANTECH2023 v2

  • Makita, H.

    Canon ANELVA Corporation

    • 8.5.2023 Atomic Diffusion Bonding Using AlN and Al2O3 Films

      T. Saito, Canon ANELVA Corporation
      H. Makita, Canon ANELVA Corporation
      Y. Suzuki, Canon ANELVA Corporation
      Y. Kozuka, Canon ANELVA Corporation
      A. Muraoka, Canon ANELVA Corporation
      H. Fukunaga, FRIS, Tohoku University
      M. Uomoto, FRIS, Tohoku University
      T. Shimatsu, FRIS, Tohoku University

      8.5.2023 Extended abstract Saito Canon ALNELVA_final ver

  • Malakoutian, Mohamadali

    Stanford University, Stanford, CA,

    • 12.1.2023 Thermal management in GaN-devices for increased power density

      Mohamadali Malakoutian, Stanford University, Stanford, CA,
      Xiang Zheng, University of Bristol, Bristol
      Martin Kuball, University of Bristol
      S. Chowdhury, Stanford University, Stanford, CA; University of Bristol, Bristol, UK

      12.1.2023 Invited Talk_Srabanti Chowdhury_final

  • MALAQUIN, Cédric

    Yole Developpement

  • Martel, James

    BAE Systems Inc.

  • Martin, Mickael

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Martinez, Xavier

    Brewer Science, Inc.

    • 3.3.2023 Photonic Debonding for Wafer-Level Packaging

      Vikram Turkani, PulseForge Corp.
      Vahid Akhavan, PulseForge Corp.
      Kurt Schroder, PulseForge Corp.
      Luke Prenger, Brewer Science, Inc.
      Xavier Martinez, Brewer Science, Inc.

      3.3 Turkani v2_PFI Edits

  • Masten, Hannah N.

    National Research Council Postdoctoral Fellow, Residing at NRL

    • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

      Marko J. Tadjer, U.S. Naval Research Laboratory
      James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
      N. Mahadik, U.S. Naval Research Laboratory
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Akito Kuramata, Novel Crystal Technology, Inc

      11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

  • Matsushima, K.

    Institute of Materials and Systems for Sustainability, Nagoya University

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Matsuura, Kazuaki

    Sumitomo Electric Device Innovations USA

  • Matsuzaki, Hideaki

    NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Mauder, C.

    AIXTRON SE

  • Mazeleyrat, E.

    STMicroelectronics

    • 14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates

      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      Mukul Debnath, IQE plc
      Andrew Clark, IQE, Cardiff, UK
      Peter M. Smowton, Cardiff University, IQE plc

      14.2.2023 CS_MANTECH-2023_14.2_Final

  • McMahon, William E.

    National Renewable Energy Laboratory

    • 17.5.2023 Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V devices

      A. K. Braun, Colorado School of Mines
      J. T. Boyer, National Renewable Energy Laboratory
      William E. McMahon, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory
      Corinne E. Packard, Colorado School of Mines, National Renewable Energy Laboratory
      Aaron Ptak, National Renewable Energy Laboratory

      17.5.2023_Braun-Boyer_NREL_extended_abstract_final

  • Megalini, Ludovico

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Meitzner, J.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Merkle, A.P.

    Crystal Sonic Inc.

  • Miesle, Adam

    KBR Inc.

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Milesi, Frédéric

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Miller, Mark J.

    Skyworks Solutions Inc.

    • 10.1.2023 Mechanisms and Control of Photolithography Hotspots in Compound Semiconductor Manufacturing

      Mark J. Miller, Skyworks Solutions Inc.
      Marietta L. Balandan, Skyworks Solutions Inc.,
      Aida J. Castro, Skyworks Solutions, Inc.
      Lorain Ross, Skyworks Solutions, Inc.
      M. Arif Zeeshan, Skyworks Solutions Inc.

      10.1.2023 – Miller Paper

  • Miller, N.

    Air Force Research Laboratory

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Moeyaert, Jeremy

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Mony, Samuel

    Skyworks Solutions, Inc.

    • 10.2.2023 Reduction in Scattered Particles Contamination in Inductively Coupled Plasma Etching Systems for High Volume High Yield Production

      Mohammadsadegh Beheshti, Skyworks Solutions Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.
      Tom Brown, Skyworks Solutions, Inc.

      10.2.2023 – Beheshti Paper

  • Morishita, Tomonori

    Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Morris, S.

    Qorvo Inc

    • 18.6.2023 The Application of High-Volume Manufacturing Heterogeneous Packaging Technology to Simplify Highly Complex Systems

      D. Robertson, Qorvo Inc
      Md Hasnine, Qorvo Inc
      G. Kent, Qorvo Inc
      N. Salazar, Qorvo Inc
      B. Rosario, Qorvo Inc
      S. Morris, Qorvo Inc

      18.06.2023-CS_MANTECH-DR_FinalPaper

  • Mortellaro, James

    BAE Systems Inc.

  • Mourey, Odile

    SOITEC

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Muraoka, A.

    Canon ANELVA Corporation

    • 8.5.2023 Atomic Diffusion Bonding Using AlN and Al2O3 Films

      T. Saito, Canon ANELVA Corporation
      H. Makita, Canon ANELVA Corporation
      Y. Suzuki, Canon ANELVA Corporation
      Y. Kozuka, Canon ANELVA Corporation
      A. Muraoka, Canon ANELVA Corporation
      H. Fukunaga, FRIS, Tohoku University
      M. Uomoto, FRIS, Tohoku University
      T. Shimatsu, FRIS, Tohoku University

      8.5.2023 Extended abstract Saito Canon ALNELVA_final ver

  • Mushini, P.

    Coherent Corp.

  • N. Feigelson, Boris

    Naval Research Laboratory

    • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

      Alan Jacobs, U.S. Naval Research Laboratory
      Boris N. Feigelson, Naval Research Laboratory
      Jennifer Hite, U.S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Marko Tadjer, U.S. Naval Research Laboratory
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory

      15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • Nagasato, Y.

    MIRISE Technologies Corporation

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Nagaya, M.

    MIRISE Technologies Corporation

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Nandi, Arpit

    University of Bristol

  • Navone, Christelle

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Nishioka, M

    Sumiden Semiconductor Materials Co., Ltd.,

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Norouzi Kalkani, Mahsa

    OSRAM Group, Regensburg, Germany

    • 3.1.2023 Plasma Dicing of thin-film LEDs

      Heribert Zull, OSRAM Group, Regensburg, Germany
      Mahsa Norouzi Kalkani, OSRAM Group, Regensburg, Germany
      Stelio Correia, OSRAM Group, Regensburg, Germany
      Mathias Kaempf, OSRAM Group, Regensburg, Germany
      Martin Strassburg, OSRAM Group, Regensburg, Germany

      3.1.2023_CS_MANTECH_2023_Zull

  • Novak, B.

    Northrop Grumman (MS), Linthicum, MD

  • Oh, Jang Seok

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Okamoto, Keitro

    Mitsuboshi Diamond Industrial Co., Ltd, Osaka, Japan

    • 3.2.2023 New and Innovative die singulation technology for Compound Semiconductors with Zero kerf loss and completely no damage on the side wall

      Keitro Okamoto, Mitsuboshi Diamond Industrial Co., Ltd, Osaka, Japan

      3.2.2023_CS_MANTECH_2023_Okamoto_final

  • Olson, Brian

    Naval Surface Warfare Center Crane

  • Onda, S.

    Institute of Materials and Systems for Sustainability, Nagoya University

    • 11.5.2023 GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing

      A. Tanaka, Institute of Materials and Systems for Sustainability, Nagoya University
      K. Matsushima, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Aratani, Hamamatsu Photonics K.K
      K. Hara, Hamamatsu Photonics K.K
      D. Kawaguchi, Hamamatsu Photonics K.K
      H. Watanabe, Institute of Materials and Systems for Sustainability, Nagoya University
      T. Kanemura, Institute of Materials and Systems for Sustainability, Nagoya University
      Y. Nagasato, MIRISE Technologies Corporation
      M. Nagaya, MIRISE Technologies Corporation
      Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
      A. Wakejima, Nagoya Institute of Technology
      Y. Ando, Institute of Materials and Systems for Sustainability, Nagoya University
      S. Onda, Institute of Materials and Systems for Sustainability, Nagoya University
      J. Suda, Institute of Materials and Systems for Sustainability, Nagoya University

      11.5.2023_May17th_at_0510pm_AtsushiTanaka

  • Ortega, Francis A.

    Tignis, Inc.

    • 10.4.2023 Learnings from Multiple Implementations of Closed Loop AI/ML Controllers for Semiconductor Manufacturing

      Francis A. Ortega, Tignis, Inc.
      Eric Holzer, Tignis, Inc.
      Mario Faria, Tignis, Inc.
      Jonathan L. Herlocker, Tignis, Inc.

      10.4.2023_Tignis_final

  • Osinsky, Andrei

    Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

    • 7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate

      Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USA
      Fengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Bharat Jalan, University of Minnesota, Minneapolis, MN 55455, USA
      Steven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA

      7.2.2023 Csmantech_Manuscript_Final_PrakashPS

    • 18.7.2023 Manufacturable processes and performance characteristics of few-layer hexagonal boron nitride-based templates on sapphire

      Tim Vogt, Agnitron Technology, Inc
      Vitali Soukhoveev, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Fikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
      Andrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA

      18.07.2023 CS_MANTECH-manuscript 2023

  • Ostermay, I.

    Ferdinand-Braun-Institut (FBH)

    • 10.3.2023 Optimization of Iridium RF-Sputter Process for AlGaN/GaN-based HEMT Gate Technology

      I. Ostermay, Ferdinand-Braun-Institut (FBH)
      Sten Seifert, Ferdinand-Braun-Institut (FBH)
      Olaf Krueger, Ferdinand-Braun-Institut (FBH)

      10.3.2023 Ostermay final

  • Packard, Corinne E.

    Colorado School of Mines, National Renewable Energy Laboratory

    • 17.5.2023 Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V devices

      A. K. Braun, Colorado School of Mines
      J. T. Boyer, National Renewable Energy Laboratory
      William E. McMahon, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory
      Corinne E. Packard, Colorado School of Mines, National Renewable Energy Laboratory
      Aaron Ptak, National Renewable Energy Laboratory

      17.5.2023_Braun-Boyer_NREL_extended_abstract_final

  • Palit,, Pratim

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Park, Wan-Soo

    Kyungpook National University

    • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

      In-Geun Lee, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      2.5,2023_Lee_Final_Paper

    • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

      Hyo-Jin Kim, Kyungpook National University
      Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
      Wan-Soo Park, Kyungpook National University
      Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
      In-Geun Lee, Kyungpook National University
      Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
      Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Jacob Yun, QSI
      Ted Kim, QSI
      Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
      Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
      Jae-Hak Lee, Kyungpook National University
      Dae-Hyun Kim, Kyungpook National University

      18.14.2023_CS_MANTECH-extended papar_v4

  • Park, Yeongeun

    Kumoh National Institute of Technology

    • 12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs

      Chaeyun Kim, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Yeongeun Park, Kumoh National Institute of Technology
      Dong-Seok Kim, Korea Atomic Energy Research Institute, Republic of Korea
      Ogyun Seok, Kumoh National Institute of Technology

      12.4.2023 CS_MANTECH-Full-Paper_edited

    • 18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage

      Yeongeun Park, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Chaeyun Kim, Kumoh National Institute of Technology
      Gyuhyeok Kang, Kumoh National Institute of Technology
      Ogyun Seok, Kumoh National Institute of Technology

      18.13.2023 Park_v2 final

  • Parker, Winston

    Wolfspeed, Durham NC

    • 6.1.2023 From Research to Reality – The Path of Compound Semiconductor Manufacturing Innovation

      Missy Stigall, Wolfspeed, Durham NC
      Winston Parker, Wolfspeed, Durham NC

      6.1.2023 Wolfspeed CS Mantech – final

  • Pate, Bradford

    Naval Research Laboratory

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Patel, Jash

    KLA Corporation

    • 18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.

      Tristan T. Burman, Cardiff University
      Jash Patel, KLA Corporation
      Huma Ashraf, KLA Corporation (SPTS Division)
      Tarran Grange, KLA Corporation
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc

      18.08.2023 CS_MANTECH-FinalDraft-18-10

  • Pattantyus-Abraham, A. G.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Pearton, Stephen

    University of Florida

    • 18.3.2023 Temperature Independence of Dynamic Switching in 4.8 A /3.6 kV NiO/β-Ga2O3 High Power Rectifiers

      Jian-Sian Li, University of Florida, Gainesville, FL
      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Cheng-Tse Tsai, University of Florida, Gainesville, FL
      Yu-Te Liao, University of Florida, Gainesville, FL
      Stephen Pearton, University of Florida

      18.3.2023_Li V2

    • 18.11.2023 Ionization Thresholds and Residue Removal in Inductively Coupled Etching of NiO/Ga2O3 with Ar and BCl3

      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Jian-Sian Li, University of Florida, Gainesville, FL
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida

      18.11.2023_Chiang

  • Pennachio, Daniel

    U.S. Naval Research Laboratory, Washington DC

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Perna, A. N.

    National Renewable Energy Laboratory

    • 17.4.2023 Comparison of Heterointerface Growth Procedures using High-Growth-Rate Hydride Vapor Phase Epitaxy

      Aaron Ptak, National Renewable Energy Laboratory
      J. T. Boyer, National Renewable Energy Laboratory
      A. K. Braun, Colorado School of Mines
      A. N. Perna, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory

      17.4.2023_Ptak_NREL_extended_abstract_final

  • Pikul, Kevin P.

    University of Illinois Urbana-Champagne

    • 14.3.2023 Silicon Anti-Phase Optical Coatings for High-Power, Single-Mode Operation in Vertical-Cavity Surface-Emitting Lasers

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Leah Espenhahn, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      Mark Kraman, University of Illinois Urbana-Champagne
      John M Dallesasse, University of Illinois at Urbana-Champaign

      14.3.2023 CSMANTECH-2023-Kevin-Pikul-Extended-Abstract

  • Pomeroy, James

    University of Bristol

    • 12.3.2023 Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly

      Zeina Abdallah, University of Bristol
      James Pomeroy, University of Bristol
      Nicolas Blasakis, Adamant Composite Ltd.
      Athanasios Baltopoulos, Adamant Composite Ltd.
      Antonios Vavouliotis, Adamant Composite Ltd.
      Martin Kuball, University of Bristol

      12.3.2023 CS_MANTECH_2023_final_Zeina_Abdallah

  • Pong, R.

    COHERENT - INNOViON

    • 5.1.2023 Isolation in Compound Semiconductors and the Risk of Neutron Generation with Implantation of Light Ions

      J. A. Turcaud, Coherent Corp.
      C. Heckman, COHERENT - INNOViON
      V. Heckman, COHERENT - INNOViON
      A. Hassan, COHERENT - INNOViON
      R. Pong, COHERENT - INNOViON
      J. Schuur, Coherent Corp.

      5.1.2023_Turcaud_Neutron_TALK_CS_Mantech_2023_v3

  • Posthuma, Niels

    Imec

  • Prabhu, Gopal

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Prathap Pitchiya, Aswin

    Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Prenger, Luke

    Brewer Science, Inc.

    • 3.3.2023 Photonic Debonding for Wafer-Level Packaging

      Vikram Turkani, PulseForge Corp.
      Vahid Akhavan, PulseForge Corp.
      Kurt Schroder, PulseForge Corp.
      Luke Prenger, Brewer Science, Inc.
      Xavier Martinez, Brewer Science, Inc.

      3.3 Turkani v2_PFI Edits

  • Ptak, Aaron

    National Renewable Energy Laboratory

    • 17.4.2023 Comparison of Heterointerface Growth Procedures using High-Growth-Rate Hydride Vapor Phase Epitaxy

      Aaron Ptak, National Renewable Energy Laboratory
      J. T. Boyer, National Renewable Energy Laboratory
      A. K. Braun, Colorado School of Mines
      A. N. Perna, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory

      17.4.2023_Ptak_NREL_extended_abstract_final

    • 17.5.2023 Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V devices

      A. K. Braun, Colorado School of Mines
      J. T. Boyer, National Renewable Energy Laboratory
      William E. McMahon, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory
      Corinne E. Packard, Colorado School of Mines, National Renewable Energy Laboratory
      Aaron Ptak, National Renewable Energy Laboratory

      17.5.2023_Braun-Boyer_NREL_extended_abstract_final

  • Rahman, Sheikh Ifatur

    The Ohio State University, Columbus, Ohio

    • 16.3.2023 Design and Performance of P-side down Green Tunnel-Junction LEDs

      Sheikh Ifatur Rahman, The Ohio State University, Columbus, Ohio
      Rob Armitage, Lumileds LLC
      Siddharth Rajan, Ohio State University

      16.3.2023 Rahman_PdownLED

  • Rajan, Siddharth

    Ohio State University

    • 16.3.2023 Design and Performance of P-side down Green Tunnel-Junction LEDs

      Sheikh Ifatur Rahman, The Ohio State University, Columbus, Ohio
      Rob Armitage, Lumileds LLC
      Siddharth Rajan, Ohio State University

      16.3.2023 Rahman_PdownLED

  • Ramanathan, Dinesh

    NexGen Power Systems Inc.

    • 9.2.2023 Challenges of Manufacturing Vertical GaN™ Technology of Future: Now a Reality with NexGen Power Systems

      Dinesh Ramanathan, NexGen Power Systems Inc.

      9.2.2023_Ramanthan

  • Regan, Dean

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Regan, Eric

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Ren, Fan

    University of Florida

    • 18.2.2023 Photoresist Softbake Oven Qualification

      Nitin Kalra, BAE Systems
      James Mortellaro, BAE Systems Inc.
      James Martel, BAE Systems Inc.
      Xiaoping Yang, BAE Systems Inc.

      18.02.2023 CS_MANTECH_2023_Final-Paper-Photoresist Softbake Oven Qualification-v4

    • 18.11.2023 Ionization Thresholds and Residue Removal in Inductively Coupled Etching of NiO/Ga2O3 with Ar and BCl3

      Chao-Ching Chiang, University of Florida, Gainesville, FL
      Xinyi Xia, University of Florida, Gainesville, FL
      Jian-Sian Li, University of Florida, Gainesville, FL
      Fan Ren, University of Florida
      Stephen Pearton, University of Florida

      18.11.2023_Chiang

  • Ren, Zhongmin

    Lumileds LLC

    • 16.1.2023 Technical and Manufacturing Challenges in MicroLED Processes

      Hee Jin Kim, Lumileds LLC
      Rob Armitage, Lumileds LLC
      Joseph Flemish, Lumileds LLC
      Zhongmin Ren, Lumileds LLC
      Mark Holmes, Lumileds LLC

      16.1.2023_Kim_MicroLED Processes

  • Risbud, D.

    Renesas Electronics America, CA, USA

  • Robertson, D.

    Qorvo Inc

    • 18.6.2023 The Application of High-Volume Manufacturing Heterogeneous Packaging Technology to Simplify Highly Complex Systems

      D. Robertson, Qorvo Inc
      Md Hasnine, Qorvo Inc
      G. Kent, Qorvo Inc
      N. Salazar, Qorvo Inc
      B. Rosario, Qorvo Inc
      S. Morris, Qorvo Inc

      18.06.2023-CS_MANTECH-DR_FinalPaper

  • Rochereau, K.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Rorsman, Niklas

    Chalmers University of Technology

    • 4.4.2023 Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs

      Terirama Thingujam, University of Bristol
      Michael J Uren, University of Bristol
      Niklas Rorsman, Chalmers University of Technology
      Matthew Smith, University of Bristol
      Andrew Barnes, European Space Agency
      Michele Brondi, Akkodis for European Space Agency (ESA)
      Martin Kuball, University of Bristol

      4.4.2023 CS_MANTECH_2023_Terirama_Thingujam_UofBristol_paper_4.4_revised

  • Rosario, B.

    Qorvo Inc

    • 18.6.2023 The Application of High-Volume Manufacturing Heterogeneous Packaging Technology to Simplify Highly Complex Systems

      D. Robertson, Qorvo Inc
      Md Hasnine, Qorvo Inc
      G. Kent, Qorvo Inc
      N. Salazar, Qorvo Inc
      B. Rosario, Qorvo Inc
      S. Morris, Qorvo Inc

      18.06.2023-CS_MANTECH-DR_FinalPaper

  • Ross, Lorain

    Skyworks Solutions, Inc.

    • 10.1.2023 Mechanisms and Control of Photolithography Hotspots in Compound Semiconductor Manufacturing

      Mark J. Miller, Skyworks Solutions Inc.
      Marietta L. Balandan, Skyworks Solutions Inc.,
      Aida J. Castro, Skyworks Solutions, Inc.
      Lorain Ross, Skyworks Solutions, Inc.
      M. Arif Zeeshan, Skyworks Solutions Inc.

      10.1.2023 – Miller Paper

  • Rousset, Baptiste

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Rowell, Petra

    Teledyne Scientific Company

    • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

      Keisuke Shinohara, Teledyne Scientific Company
      Dean Regan, Teledyne Scientific Company
      Casey King, Teledyne Scientific Company
      Eric Regan, Teledyne Scientific Company
      Petra Rowell, Teledyne Scientific Company
      Andrea Arias, Teledyne Scientific Company
      Andrew Carter, Teledyne Scientific Company
      Joshua Bergman, Teledyne Scientific Company
      Miguel Urteaga, Teledyne Scientific Company
      Berinder Brar, Teledyne Scientific Company

      4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2

  • Sahin, H.

    United Monolithic Semiconductors – GmbH

  • Saito, T.

    Canon ANELVA Corporation

    • 8.5.2023 Atomic Diffusion Bonding Using AlN and Al2O3 Films

      T. Saito, Canon ANELVA Corporation
      H. Makita, Canon ANELVA Corporation
      Y. Suzuki, Canon ANELVA Corporation
      Y. Kozuka, Canon ANELVA Corporation
      A. Muraoka, Canon ANELVA Corporation
      H. Fukunaga, FRIS, Tohoku University
      M. Uomoto, FRIS, Tohoku University
      T. Shimatsu, FRIS, Tohoku University

      8.5.2023 Extended abstract Saito Canon ALNELVA_final ver

  • Salazar, N.

    Qorvo Inc

    • 18.6.2023 The Application of High-Volume Manufacturing Heterogeneous Packaging Technology to Simplify Highly Complex Systems

      D. Robertson, Qorvo Inc
      Md Hasnine, Qorvo Inc
      G. Kent, Qorvo Inc
      N. Salazar, Qorvo Inc
      B. Rosario, Qorvo Inc
      S. Morris, Qorvo Inc

      18.06.2023-CS_MANTECH-DR_FinalPaper

  • Sanchez, Loic

    Univ. Grenoble Alpes

    • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

      Bruno Ghyselen, SOITEC
      François-Xavier Darras, SOITEC
      Odile Mourey, SOITEC
      Christelle Navone, Univ. Grenoble Alpes
      Loic Sanchez, Univ. Grenoble Alpes
      Christine Di Nardo, Univ. Grenoble Alpes
      Carla Crobu, Univ. Grenoble Alpes
      Laura Toselli, Univ. Grenoble Alpes
      Baptiste Rousset, Univ. Grenoble Alpes
      Frédéric Milesi, Univ. Grenoble Alpes
      Laurence Gabette, Univ. Grenoble Alpes
      Frank Fournel, Univ. Grenoble Alpes
      Jean Decobert, III-V Lab
      Claire Besancon, III-V Lab
      Mickael Martin, Univ. Grenoble Alpes
      Jeremy Moeyaert, Univ. Grenoble Alpes
      Thierry Baron, Univ. Grenoble Alpes

      17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • Sanyal, Indraneel

    University of Bristol

  • Sarmiento, M.

    STMicroelectronics

    • 14.1.2023 Colloidal Quantum Dot Image Sensor Technology

      Jonathan Steckel, ST Microelectronics
      J. Arnaud, STMicroelectronics
      A. G. Pattantyus-Abraham, STMicroelectronics
      A, Singh, STMicroelectronics
      E. Josse, STMicroelectronics
      M. Bidaud, STMicroelectronics
      J. Meitzner, STMicroelectronics
      M. Sarmiento, STMicroelectronics
      A. Arnaud, STMicroelectronics
      E. Mazeleyrat, STMicroelectronics
      H. Wehbe-Alause, STMicroelectronics
      K. Rochereau, STMicroelectronics

      14.1_2023 CS_MANTECH paper-Feb 2023 V2

  • Sasaki, Kohei

    Novel Crystal Technology

    • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Tatyana Feygelson, U. S. Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
      Alan Jacobs, U.S. Naval Research Laboratory
      Boris Feygelson, U.S. Naval Research Laboratory
      Kohei Sasaki, Novel Crystal Technology
      Akito Kuramata, Novel Crystal Technology, Inc
      Pai-Ying Liao, Purdue University
      Peide D. Ye, Purdue University
      Bradford Pate, Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory

      11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • Savtchouk, A.

    Semilab SDI

  • Schmid, Patrick

    Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

    • 3.4.2023 Advanced Carbon film for high-voltage power, high-performance SiC devices

      Ludovico Megalini, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Yi Zheng, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Ricky Fang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Pratim Palit,, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jinghe Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Qintao Zhang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jang Seok Oh, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Bryan Turner, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Samphy Hong, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Jiao Yang, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Joseph Lee, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Gopal Prabhu, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Aswin Prathap Pitchiya, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      David A. Britz, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Raghav Sreenivasan, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Stephen Krause, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA: Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Michael Chudzik, Applied Materials, 3325 Scott Bldv., Santa Clara, CA (95054), USA Applied Materials, 35 Dory Road, Gloucester, MA (01930), USA
      Tamara Fidler, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Patrick Schmid, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany
      Bas Derksema, Centrotherm international AG, Württemberger Str. 31, 89143 Blaubeuren, Germany

      3.4.203_CS_MANTECH_2023_Megalini_final

  • Schrayer, B.

    Semilab SDI

  • Schroder, Kurt

    PulseForge Corp.

    • 3.3.2023 Photonic Debonding for Wafer-Level Packaging

      Vikram Turkani, PulseForge Corp.
      Vahid Akhavan, PulseForge Corp.
      Kurt Schroder, PulseForge Corp.
      Luke Prenger, Brewer Science, Inc.
      Xavier Martinez, Brewer Science, Inc.

      3.3 Turkani v2_PFI Edits

  • Schulte, Kevin

    National Renewable Energy Laboratory

    • 17.4.2023 Comparison of Heterointerface Growth Procedures using High-Growth-Rate Hydride Vapor Phase Epitaxy

      Aaron Ptak, National Renewable Energy Laboratory
      J. T. Boyer, National Renewable Energy Laboratory
      A. K. Braun, Colorado School of Mines
      A. N. Perna, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory

      17.4.2023_Ptak_NREL_extended_abstract_final

    • 17.5.2023 Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V devices

      A. K. Braun, Colorado School of Mines
      J. T. Boyer, National Renewable Energy Laboratory
      William E. McMahon, National Renewable Energy Laboratory
      Kevin Schulte, National Renewable Energy Laboratory
      John Simon, National Renewable Energy Laboratory
      Corinne E. Packard, Colorado School of Mines, National Renewable Energy Laboratory
      Aaron Ptak, National Renewable Energy Laboratory

      17.5.2023_Braun-Boyer_NREL_extended_abstract_final

  • Schuur, J.

    Coherent Corp.

    • 5.1.2023 Isolation in Compound Semiconductors and the Risk of Neutron Generation with Implantation of Light Ions

      J. A. Turcaud, Coherent Corp.
      C. Heckman, COHERENT - INNOViON
      V. Heckman, COHERENT - INNOViON
      A. Hassan, COHERENT - INNOViON
      R. Pong, COHERENT - INNOViON
      J. Schuur, Coherent Corp.

      5.1.2023_Turcaud_Neutron_TALK_CS_Mantech_2023_v3

  • Scott Katzer, D.

    U.S. Naval Research Laboratory

    • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Andy Xie, Qorvo
      Shawn Mack, U.S. Naval Research Laboratory
      D. Scott Katzer, U.S. Naval Research Laboratory
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David J Meyer, U.S. Naval Research Laboratory, Washington, DC

      8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

  • Seifert, Sten

    Ferdinand-Braun-Institut (FBH)

    • 10.2.2023 Reduction in Scattered Particles Contamination in Inductively Coupled Plasma Etching Systems for High Volume High Yield Production

      Mohammadsadegh Beheshti, Skyworks Solutions Inc.
      Samuel Mony, Skyworks Solutions, Inc.
      Nercy Ebrahimi, Skyworks Solution Inc.
      Tom Brown, Skyworks Solutions, Inc.

      10.2.2023 – Beheshti Paper

  • Seok, Ogyun

    Kumoh National Institute of Technology

    • 12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs

      Chaeyun Kim, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Yeongeun Park, Kumoh National Institute of Technology
      Dong-Seok Kim, Korea Atomic Energy Research Institute, Republic of Korea
      Ogyun Seok, Kumoh National Institute of Technology

      12.4.2023 CS_MANTECH-Full-Paper_edited

    • 18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage

      Yeongeun Park, Kumoh National Institute of Technology
      Hyowon Yoon, Kumoh National Institute of Technology
      Chaeyun Kim, Kumoh National Institute of Technology
      Gyuhyeok Kang, Kumoh National Institute of Technology
      Ogyun Seok, Kumoh National Institute of Technology

      18.13.2023 Park_v2 final

  • Sepelak, Nicholas P.

    KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

    • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

      Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hyung Min Jeon, KBR Inc.,
      Kyle Liddy, Air Force Research Laboratory
      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
      Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      7.3.2023 CSMantechExtendedAbstract4

    • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

      Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Adam Miesle, KBR Inc.
      Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Hanwool Lee, KBR Inc.
      Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
      N. Miller, Air Force Research Laboratory
      Matt Grupen, Air Force Research Laboratory, Sensors Directorate
      Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
      Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
      Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
      Wenjuan Zhu, University of Illinois, Urbana
      Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
      Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

      12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev

  • Shea, P.

    Northrop Grumman Mission Center

  • Shekerov, I.

    Semilab SDI

  • Shenoy, Devanand

    Office of the Under Secretary of Defense for Research and Engineering, Washington, DC

    • 1.2.2023-DoD Microelectronics: Heterogeneous Integration with Compound Semiconductors and Photonics

      Devanand Shenoy, Office of the Under Secretary of Defense for Research and Engineering, Washington, DC
      Darren Crum, Naval Surface Warfare Center Crane
      Brian Olson, Naval Surface Warfare Center Crane
      Joshua Hawke, Naval Surface Warfare Center Crane

      1.2.2023-Shenoy_1.2_CS_MANTECH-Final-Paper-Feb-2023_v6

  • Shibata, K.

    Sumiden Semiconductor Materials Co., Ltd.,

    • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

      K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
      K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
      M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
      K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
      F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
      S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
      Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
      Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

      17.2.2023_Shibata_SEI_extended_abstract_final

  • Shimatsu, T.

    FRIS, Tohoku University

    • 8.5.2023 Atomic Diffusion Bonding Using AlN and Al2O3 Films

      T. Saito, Canon ANELVA Corporation
      H. Makita, Canon ANELVA Corporation
      Y. Suzuki, Canon ANELVA Corporation
      Y. Kozuka, Canon ANELVA Corporation
      A. Muraoka, Canon ANELVA Corporation
      H. Fukunaga, FRIS, Tohoku University
      M. Uomoto, FRIS, Tohoku University
      T. Shimatsu, FRIS, Tohoku University

      8.5.2023 Extended abstract Saito Canon ALNELVA_final ver

  • Shindo, Yuichiro

    Matsuda Sangyo Co., Ltd.

    • 5.4.2023 Gol