• Halhoul, Houssam

    Ferdinand-Braun-Institut (FBH)
    • 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents

      Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
      Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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  • Hwang, Jinwoo

    Ohio State University
    • 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices

      Sushovan Dhara, Ohio State University
      Ashok Dheenan
      Nathan Wriedt, Ohio State University
      Joe McGlone, Ohio State University
      Jinwoo Hwang, Ohio State University
      Steven Ringel, Ohio State University
      Hongping Zhao, Ohio State University
      Siddharth Rajan, Ohio State University
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  • Kawashimo, Atsushi

    Matsuda Sangyo Co., Ltd.
    • 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes

      Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
      Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
      Masatoshi Koyama, Osaka Institute of Technology
      Yuichiro Shindo, Precious Metals Materials Division, Matsuda Sangyo Co., Ltd.
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  • Mermet-Lyaudoz, Raphael

    Yole Developpment
    • 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?

      Eric Virey, Yole Développement
      Raphael Mermet-Lyaudoz, Yole Developpment
      Zine Bouhamri, Yole Développement
      A. Jaffal, Yole Intelligence
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  • Xiao, D.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Zettler, J.-T

    LayTec AG
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Abdallah, Zeina

    University of Bristol, Bristol, UK
    • 10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs

      Zeina Abdallah, University of Bristol, Bristol, UK
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Adrian, A.

    LayTec AG
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Ahmad, Habib

    Georgia Institute of Technology
    • 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market

      W. Alan Doolittle, Georgia Institute of Technology
      Habib Ahmad, Georgia Institute of Technology
      Christopher M. Matthews, Georgia Institute of Technology
      Keisuke Motoki, Georgia Institute of Technology
      Sangho Lee, Georgia Institute of Technology
      Emily N. Marshall, Georgia Institute of Technology
      Amanda L. Tang, Georgia Institute of Technology
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  • Alcotte, R.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Alian, A.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Allford, Craig

    Cardiff University
    • 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy

      Jack Baker, Cardiff University
      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc
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  • Allibert, Frédéric

    SOITEC
    • 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

      Eric Guiot, SOITEC
      Frédéric Allibert, SOITEC
      Jürgen Leib, Fraunhofer IISB
      Tom Becker, Fraunhofer IISB
      Oleg Rusch, Fraunhofer IISB
      Alexis Drouin, SOITEC S.A.
      Walter Schwarzenbach, SOITEC
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  • Anderson, Travis J.

    U.S. Naval Research Laboratory
    • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Geoffrey M. Foster, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Vladimir Odnoblyudov, Qromis, Inc.
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Asad, M.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Ashraf, Huma

    KLA Corporation
    • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

      A. Croot, KLA Corporation (SPTS Division)
      B. Jones, Swansea University
      J. Mitchell, Swansea University, KLA Corporation (SPTS Division)
      Huma Ashraf, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
      J. Hopkins, KLA Corporation (SPTS Division)
      O. J. Guy, Swansea University
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  • Bagal, I.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Baker, Jack

    Cardiff University
    • 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy

      Jack Baker, Cardiff University
      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc
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  • Bakeroot, Benoit

    imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Banerjee, S.

    imec
    • 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

      H. Hahn, AIXTRON SE
      C. Mauder, AIXTRON SE
      M. Marx, AIXTRON SE
      Z. Gao, AIXTRON SE
      P. Lauffer, AIXTRON SE
      O. Schon, AIXTRON SE
      P. T. John, AIXTRON SE
      S. Banerjee, imec
      P. Cardinael, Imec and Université catholique de Louvain
      J. P. Raskin, Université catholique de Louvain
      B. Parvais, imec & Vrije Universiteit Brussels
      lin, imec
      D. Fahle, AIXTRON SE
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    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Barraza, Wilmer

    Aeluma, Inc.
    • 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes

      Jonathan Klamkin, Aeluma, Inc.
      Matthew Dummer, Aeluma, Inc.
      Bei Shi, Aeluma, Inc.
      Bowen Song, Aeluma, Inc.
      Simone Suran Brunelli, Aeluma, Inc.
      Michael McGivney, Aeluma, Inc.
      Robert Buller, Aeluma, Inc.
      Wilmer Barraza, Aeluma, Inc.
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  • Bassal, Amer

    Ferdinand-Braun-Institut (FBH)
    • 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs

      Hossein Yazdani, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
      Hady Yacoub, Ferdinand-Braun-Institut (FBH)
      Amer Bassal, Ferdinand-Braun-Institut (FBH)
      Taylor Moule, Ferdinand-Braun-Institut (FBH)
      Joost Wartena, Ferdinand-Braun-Institut (FBH)
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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  • Becker, Tom

    Fraunhofer IISB
    • 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

      Eric Guiot, SOITEC
      Frédéric Allibert, SOITEC
      Jürgen Leib, Fraunhofer IISB
      Tom Becker, Fraunhofer IISB
      Oleg Rusch, Fraunhofer IISB
      Alexis Drouin, SOITEC S.A.
      Walter Schwarzenbach, SOITEC
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  • Binetti, M.

    LayTec AG
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Bisi, Davide

    Transphorm Inc.
    • 5.0.1.2024 GaN Power: the solution that is not SiC

      Davide Bisi, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      C. J. Neufeld, Transphorm Inc
      R. Lal, Transphorm Inc
      P. Zuk, Transphorm Inc
      L. Shen, Transphorm Inc
      P. Parikh, Transphorm Inc
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
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  • Boccardi, G.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Bouhamri, Zine

    Yole Développement
    • 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?

      Eric Virey, Yole Développement
      Raphael Mermet-Lyaudoz, Yole Developpment
      Zine Bouhamri, Yole Développement
      A. Jaffal, Yole Intelligence
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  • Brand, T.

    LayTec AG
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Broda, M.

    Northrop Grumman Mission Systems
    • 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing

      A. Molina, Northrop Grumman Mission Systems
      B. Grisafe, Northrop Grumman Mission Systems
      M. Broda, Northrop Grumman Mission Systems
      H. K. Nguyen, Northrop Grumman Mission Center
      J.S. Mason, Northrop Grumman Electronic Systems
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  • Broell, Gilet M.

    ALEDIA SAS
    • 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays

      Gilet M. Broell, ALEDIA SAS
      M. Mairy, ALEDIA SAS
      P. Tchoulfian, ALEDIA SAS
      C. Talagrand, ALEDIA SAS
      T. Ludurczak, ALEDIA SAS
      T. Lacave, ALEDIA SAS
      I-C Robin, ALEDIA SAS
      X. Hugon, ALEDIA SAS
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  • Brown, Tom

    Skyworks Solutions, Inc.
    • 11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity

      Stephanie Y. Chang, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Randy Bryie, Skyworks Solutions, Inc.
      Rainier Lee, Skyworks Solutions, Inc.
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  • Brunelli, Simone Suran

    Aeluma, Inc.
    • 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes

      Jonathan Klamkin, Aeluma, Inc.
      Matthew Dummer, Aeluma, Inc.
      Bei Shi, Aeluma, Inc.
      Bowen Song, Aeluma, Inc.
      Simone Suran Brunelli, Aeluma, Inc.
      Michael McGivney, Aeluma, Inc.
      Robert Buller, Aeluma, Inc.
      Wilmer Barraza, Aeluma, Inc.
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  • Brunner, Frank

    Ferdinand-Braun-Institut, Berlin, Germany
    • 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents

      Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
      Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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    • 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates

      Enrico Brusaterra, Ferdinand-Braun-Institut
      Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
      Alexander Külberg, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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  • Brusaterra, Enrico

    Ferdinand-Braun-Institut
    • 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates

      Enrico Brusaterra, Ferdinand-Braun-Institut
      Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
      Alexander Külberg, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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  • Bryie, Randy

    Skyworks Solutions, Inc.
    • 11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity

      Stephanie Y. Chang, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Randy Bryie, Skyworks Solutions, Inc.
      Rainier Lee, Skyworks Solutions, Inc.
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  • Buller, Robert

    Aeluma, Inc.
    • 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes

      Jonathan Klamkin, Aeluma, Inc.
      Matthew Dummer, Aeluma, Inc.
      Bei Shi, Aeluma, Inc.
      Bowen Song, Aeluma, Inc.
      Simone Suran Brunelli, Aeluma, Inc.
      Michael McGivney, Aeluma, Inc.
      Robert Buller, Aeluma, Inc.
      Wilmer Barraza, Aeluma, Inc.
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  • Cao, Lina

    Keysight Technologies
    • 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes

      Z. Zhu, University of Notre Dame
      Lina Cao, Keysight Technologies
      Yu Duan, University of Notre Dame
      Wesley Turner, University of Notre Dame
      Jinqiao Xie, Qorvo Inc
      Patrick Fay, University of Notre Dame
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  • Cardinael, P.

    Imec and Université catholique de Louvain
    • 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

      H. Hahn, AIXTRON SE
      C. Mauder, AIXTRON SE
      M. Marx, AIXTRON SE
      Z. Gao, AIXTRON SE
      P. Lauffer, AIXTRON SE
      O. Schon, AIXTRON SE
      P. T. John, AIXTRON SE
      S. Banerjee, imec
      P. Cardinael, Imec and Université catholique de Louvain
      J. P. Raskin, Université catholique de Louvain
      B. Parvais, imec & Vrije Universiteit Brussels
      lin, imec
      D. Fahle, AIXTRON SE
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    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Ceulemans, K.

    Imec
    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Chang, Kuo-Jen

    National Chung-Shan Institute of Science and Technology
  • Chang, Li-Cheng

    National Taiwan University; WIN Semiconductor
    • 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application

      Lung-Yi Tseng, WIN Semiconductors Corp.
      Li-Cheng Chang, National Taiwan University; WIN Semiconductor
      Jung-Tao Chung, WIN Semiconductors Corp
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp.
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  • Chang, Stephanie Y.

    Skyworks Solutions, Inc.
  • Charnas,, Adam

    Purdue University
    • 3.2.1.2024 (Invited) Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation Frequency

      Adam Charnas,, Purdue University
      Dongqi Zheng, Purdue University
      Peide D. Ye, Purdue University
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  • Chaw, Derek

    University of Illinois at Urbana-Champaign
    • 6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs

      Zetai Liu, University of Illinois at Urbana-Champaign
      Haonan Wu, University of Illinois at Urbana-Champaign, Holonyak Micro & Nanotechnology Lab,
      Derek Chaw, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
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    • 8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs

      Derek Chaw, University of Illinois at Urbana-Champaign
      Haonan Wu, University of Illinois at Urbana-Champaign, Holonyak Micro & Nanotechnology Lab,
      Zetai Liu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
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  • Chebi, R.

    Coherent Corp.
    • 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC

      J. A. Turcaud, Coherent Corp.
      D. Lee, Coherent Corp.
      D. Rossman, Coherent Corp.
      J. Schuur, Coherent Corp.
      R. Chebi, Coherent Corp.
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  • Chen, Chih-Tien

    National Chung-Shan Institute of Science and Technology
    • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

      Chong-Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Yong-Xiang Zhuang, Chang Gung University
      Yang-Ching Ho, Chang Gung University
      Chen-Kang Chuang, Chang Gung University
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
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  • Chen, Sam

    Unikorn Semiconductor
    • 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend

      Sam Chen, Unikorn Semiconductor
      HaoMin Ku, Unikorn Semiconductor
      Chingen Huang, Unikorn Semiconductor
      TzuLing Yang, Unikorn Semiconductor
      Jimmy Shen, Unikorn Semiconductor
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  • Chen, Tao

    The Hong Kong University of Science and Technology
    • 2.1.2.2024 Expanding the Scope of GaN Power Integration

      Kevin J. Chen, The Hong Kong University of Science and Technology
      Sirui Feng, The Hong Kong University of Science and Technology
      Tao Chen, The Hong Kong University of Science and Technology
      Zheyang Zheng, The Hong Kong University of Science and Technology
      Jin Wei, The Hong Kong University of Science and Technology
      Gang Lyu, The Hong Kong University of Science and Technology
      Li Zhang, The Hong Kong University of Science and Technology
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  • Chiu, Chao-Wei

    Chang Gung University
    • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

      Chong-Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Yong-Xiang Zhuang, Chang Gung University
      Yang-Ching Ho, Chang Gung University
      Chen-Kang Chuang, Chang Gung University
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
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  • Chiu, Hsien-Chin

    Chang Gung University
  • Chiu, J.

    VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Choi, Su-Min

    Kyungpook National University
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Chou, Edison

    WIN Semiconductors Corp.
    • 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression

      Wayne Lin, WIN Semiconductors Corp
      Wen-Hsin Wu, WIN Semiconductors Corporation
      Chien-Rong Yu, WIN Semiconductors Corp.
      Yu-Li Ho, WIN Semiconductors Corp.
      Edison Chou, WIN Semiconductors Corp.
      Jia-Jyun Guo, WIN Semiconductors Corp.
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
      Yu-Syuan Lin, WIN Semiconductors Corp.
      Cheng-Kao Lin, WIN Semiconductors Corp.
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  • Chuang, Chen-Kang

    Chang Gung University
    • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

      Chong-Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Yong-Xiang Zhuang, Chang Gung University
      Yang-Ching Ho, Chang Gung University
      Chen-Kang Chuang, Chang Gung University
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
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  • Chung, Jung-Tao

    WIN Semiconductors Corp
    • 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application

      Lung-Yi Tseng, WIN Semiconductors Corp.
      Li-Cheng Chang, National Taiwan University; WIN Semiconductor
      Jung-Tao Chung, WIN Semiconductors Corp
      Hsi-Tsung Lin, WIN Semiconductors Corp.
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Cheng-Kuo Lin, WIN Semiconductors Corp.
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  • Collaert, N.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Comart, I.

    imec & Vrije Universiteit Brussels
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Cornwell, D.

    LayTec AG
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Croot, A.

    KLA Corporation (SPTS Division)
    • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

      A. Croot, KLA Corporation (SPTS Division)
      B. Jones, Swansea University
      J. Mitchell, Swansea University, KLA Corporation (SPTS Division)
      Huma Ashraf, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
      J. Hopkins, KLA Corporation (SPTS Division)
      O. J. Guy, Swansea University
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  • Cubero, Joaquin Currier

    Skyworks Solutions, Inc.
    • 10.2.3.2024 Leveraging Smart Factory Principles for Chemical Usage and Cost Reductions

      M. J. Miller, Skyworks Solutions Inc.
      Joaquin Currier Cubero, Skyworks Solutions, Inc.
      M. A. Zeeshan, Skyworks Solutions Inc.
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  • D. Dupuis, Russell

    Georgia Institute of Technology, Atlanta, GA
    • 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode

      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Shyh-Chiang Shen, Georgia Institute of Technology
      A. Nepomuk Otte, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
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  • Davies, J. Iwan

    IQE plc
    • 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy

      Jack Baker, Cardiff University
      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc
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  • De Backer, J.

    Imec
    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • De Pauw, H.

    CMST, imec & Ghent University
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Decobert, Jean

    III-V Lab
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Decoutere, S.

    imec
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Desset, D.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Detchprohm, Theeradetch

    Georgia Institute of Technology
    • 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode

      Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
      Theeradetch Detchprohm, Georgia Institute of Technology
      Shyh-Chiang Shen, Georgia Institute of Technology
      A. Nepomuk Otte, Georgia Institute of Technology
      Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
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  • Dhara, Sushovan

    Ohio State University
    • 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices

      Sushovan Dhara, Ohio State University
      Ashok Dheenan
      Nathan Wriedt, Ohio State University
      Joe McGlone, Ohio State University
      Jinwoo Hwang, Ohio State University
      Steven Ringel, Ohio State University
      Hongping Zhao, Ohio State University
      Siddharth Rajan, Ohio State University
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  • Dheenan, Ashok

    • 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices

      Sushovan Dhara, Ohio State University
      Ashok Dheenan
      Nathan Wriedt, Ohio State University
      Joe McGlone, Ohio State University
      Jinwoo Hwang, Ohio State University
      Steven Ringel, Ohio State University
      Hongping Zhao, Ohio State University
      Siddharth Rajan, Ohio State University
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  • Di Maso, Peter

    Cambridge GaN Devices
    • 6.1.2.2024 (Invited) GaN Power ICs bring highest levels of sustainability through manufacturing processes and end-equipment applications.

      Peter Di Maso, Cambridge GaN Devices
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  • Dipsey, Mark

    Finwave Semiconductor Inc
    • 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications

      Vincent Johnson, Finwave Semiconductor Inc
      Zev Pogrebin, Finwave Semiconductor Inc
      Mark Dipsey, Finwave Semiconductor Inc
      Hal S. Emmer, Finwave Semiconductor Inc
      Yuxuan Zhang, Finwave Semiconductor Inc
      Dongfei Pei, Finwave Semiconductor Inc
      Bin Lu, Finwave Semiconductor Inc
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  • Doolittle, W. Alan

    Georgia Institute of Technology
    • 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market

      W. Alan Doolittle, Georgia Institute of Technology
      Habib Ahmad, Georgia Institute of Technology
      Christopher M. Matthews, Georgia Institute of Technology
      Keisuke Motoki, Georgia Institute of Technology
      Sangho Lee, Georgia Institute of Technology
      Emily N. Marshall, Georgia Institute of Technology
      Amanda L. Tang, Georgia Institute of Technology
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  • Drouin, Alexis

    SOITEC S.A.
    • 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

      Eric Guiot, SOITEC
      Frédéric Allibert, SOITEC
      Jürgen Leib, Fraunhofer IISB
      Tom Becker, Fraunhofer IISB
      Oleg Rusch, Fraunhofer IISB
      Alexis Drouin, SOITEC S.A.
      Walter Schwarzenbach, SOITEC
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  • Duan, Yu

    University of Notre Dame
    • 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes

      Z. Zhu, University of Notre Dame
      Lina Cao, Keysight Technologies
      Yu Duan, University of Notre Dame
      Wesley Turner, University of Notre Dame
      Jinqiao Xie, Qorvo Inc
      Patrick Fay, University of Notre Dame
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  • Dummer, Matthew

    Aeluma, Inc.
  • ElKashlan, R.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Emmer, Hal S.

    Finwave Semiconductor Inc
    • 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications

      Vincent Johnson, Finwave Semiconductor Inc
      Zev Pogrebin, Finwave Semiconductor Inc
      Mark Dipsey, Finwave Semiconductor Inc
      Hal S. Emmer, Finwave Semiconductor Inc
      Yuxuan Zhang, Finwave Semiconductor Inc
      Dongfei Pei, Finwave Semiconductor Inc
      Bin Lu, Finwave Semiconductor Inc
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  • Ersland, Peter

    Macom Technology Solutions
    • 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing

      Pradeep Waduge, MACOM Technology Solutions
      Debdas Pal, MACOM Technology
      Peter Ersland, Macom Technology Solutions
      Sam June, MACOM Technology
      Chris Samson, MACOM Technology
      Vince Hoang, MACOM Technology
      Shanali Weerasinghe, MACOM Technology
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  • Espenhahn, Leah

    University of Illinois at Urbana-Champaign
    • 8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical Aperture Definition in Optical Coatings

      Kevin P. Pikul, University of Illinois Urbana-Champagne
      Leah Espenhahn, University of Illinois at Urbana-Champaign
      Patrick Su, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
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  • Fahle, D.

    AIXTRON SE
    • 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

      H. Hahn, AIXTRON SE
      C. Mauder, AIXTRON SE
      M. Marx, AIXTRON SE
      Z. Gao, AIXTRON SE
      P. Lauffer, AIXTRON SE
      O. Schon, AIXTRON SE
      P. T. John, AIXTRON SE
      S. Banerjee, imec
      P. Cardinael, Imec and Université catholique de Louvain
      J. P. Raskin, Université catholique de Louvain
      B. Parvais, imec & Vrije Universiteit Brussels
      lin, imec
      D. Fahle, AIXTRON SE
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  • Fareed, Qhalid

    Texas Instrument
    • 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap

      Jungwoo Joh, Texas Instruments
      Qhalid Fareed, Texas Instrument
      Yoga Saripalli, Texas Instruments
      Dong Seup Lee, Texas Instruments
      Ethan Lee, Texas Instruments
      Pinghai Hao, Texas Instruments
      Seetharaman Sridhar, Texas Instruments
      Sameer Pendharkar, Texas Instruments
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  • Faria, Mario

    Tignis, Inc.
    • 10.2.4.2024 Benefits of Implementing AI/ML Controllers for Semiconductor Manufacturing, Including Multi-Tool Co-Optimization

      Eric Holzer, Tignis, Inc.
      Mario Faria, Tignis, Inc.
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  • Fay, Patrick

    University of Notre Dame
    • 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes

      Z. Zhu, University of Notre Dame
      Lina Cao, Keysight Technologies
      Yu Duan, University of Notre Dame
      Wesley Turner, University of Notre Dame
      Jinqiao Xie, Qorvo Inc
      Patrick Fay, University of Notre Dame
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  • Feng, Milton

    University of Illinois Urbana-Champaign
    • 6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs

      Zetai Liu, University of Illinois at Urbana-Champaign
      Haonan Wu, University of Illinois at Urbana-Champaign, Holonyak Micro & Nanotechnology Lab,
      Derek Chaw, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
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    • 8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs

      Derek Chaw, University of Illinois at Urbana-Champaign
      Haonan Wu, University of Illinois at Urbana-Champaign, Holonyak Micro & Nanotechnology Lab,
      Zetai Liu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
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  • Feng, Sirui

    The Hong Kong University of Science and Technology
    • 2.1.2.2024 Expanding the Scope of GaN Power Integration

      Kevin J. Chen, The Hong Kong University of Science and Technology
      Sirui Feng, The Hong Kong University of Science and Technology
      Tao Chen, The Hong Kong University of Science and Technology
      Zheyang Zheng, The Hong Kong University of Science and Technology
      Jin Wei, The Hong Kong University of Science and Technology
      Gang Lyu, The Hong Kong University of Science and Technology
      Li Zhang, The Hong Kong University of Science and Technology
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  • Feygelson, Tatyana

    Naval Research Laboratory
    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Filice, F.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Foster, Geoffrey M.

    U.S. Naval Research Laboratory
    • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Geoffrey M. Foster, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Vladimir Odnoblyudov, Qromis, Inc.
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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  • Francis, Daniel

    Akash Systems, San Francisco, CA, USA
    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Furuhata, T.

    Mitsubishi Electric Corporation
    • 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar

      E. Yagyu, Mitsubishi Electric Corporation
      D. Tsunami, Mitsubishi Electric Corporation
      T. Matsuura, Mitsubishi Electric Corporation
      T. Furuhata, Mitsubishi Electric Corporation
      M. Nakamura, Mitsubishi Electric Corporation
      T. Matsuda, Mitsubishi Electric Corporation
      K. Kuwata, Mitsubishi Electric Corporation
      T. Kobayashi, Mitsubishi Electric Corporation
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  • Gao, Z.

    AIXTRON SE
  • Geens, Karen

    imec, Leuven, Belgium
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Georgiev, Daniel G.

    University of Toledo, Toledo OH
  • Gillgrass, Sara

    Cardiff University
    • 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy

      Jack Baker, Cardiff University
      Sara Gillgrass, Cardiff University
      Craig Allford, Cardiff University
      J. Iwan Davies, IQE plc
      Samuel Shutts, Cardiff University. IQE plc
      Peter M. Smowton, Cardiff University, IQE plc
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  • Goossens, D.

    Imec
    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Gramegna, G.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Grisafe, B.

    Northrop Grumman Mission Systems
    • 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing

      A. Molina, Northrop Grumman Mission Systems
      B. Grisafe, Northrop Grumman Mission Systems
      M. Broda, Northrop Grumman Mission Systems
      H. K. Nguyen, Northrop Grumman Mission Center
      J.S. Mason, Northrop Grumman Electronic Systems
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  • Grupen-Shemansky, Melissa

    Technology Communities, SEMI
    • 10.2.1.2024 (Invited) CHIPS Act and its Impact on the Compound Semiconductor Industry

      Melissa Grupen-Shemansky, Technology Communities, SEMI
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  • Guiot, Eric

    SOITEC
    • 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

      Eric Guiot, SOITEC
      Frédéric Allibert, SOITEC
      Jürgen Leib, Fraunhofer IISB
      Tom Becker, Fraunhofer IISB
      Oleg Rusch, Fraunhofer IISB
      Alexis Drouin, SOITEC S.A.
      Walter Schwarzenbach, SOITEC
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  • Guo, Jia-Jyun

    WIN Semiconductors Corp.
    • 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression

      Wayne Lin, WIN Semiconductors Corp
      Wen-Hsin Wu, WIN Semiconductors Corporation
      Chien-Rong Yu, WIN Semiconductors Corp.
      Yu-Li Ho, WIN Semiconductors Corp.
      Edison Chou, WIN Semiconductors Corp.
      Jia-Jyun Guo, WIN Semiconductors Corp.
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
      Yu-Syuan Lin, WIN Semiconductors Corp.
      Cheng-Kao Lin, WIN Semiconductors Corp.
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  • Gupta, Geetak

    Transphorm Inc.
    • 5.0.1.2024 GaN Power: the solution that is not SiC

      Davide Bisi, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      C. J. Neufeld, Transphorm Inc
      R. Lal, Transphorm Inc
      P. Zuk, Transphorm Inc
      L. Shen, Transphorm Inc
      P. Parikh, Transphorm Inc
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
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  • Guy, O. J.

    Swansea University
    • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

      A. Croot, KLA Corporation (SPTS Division)
      B. Jones, Swansea University
      J. Mitchell, Swansea University, KLA Corporation (SPTS Division)
      Huma Ashraf, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
      J. Hopkins, KLA Corporation (SPTS Division)
      O. J. Guy, Swansea University
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  • Haberland, K.

    LayTec AG
    • 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

      Jean Decobert, III-V Lab
      N. Vaissiere, III-V Lab
      D. Micha, III-V Lab
      D. Néel, III-V Lab
      M. Binetti, LayTec AG
      A. Adrian, LayTec AG
      C. Lörchner-Gerdaus, LayTec AG
      D. Cornwell, LayTec AG
      N. Rezaei-Hartmann, LayTec AG
      T. Brand, LayTec AG
      A. Martinez, LayTec AG
      K. Haberland, LayTec AG
      J.-T Zettler, LayTec AG
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  • Hahn, H.

    AIXTRON SE
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Hao, Pinghai

    Texas Instruments
    • 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap

      Jungwoo Joh, Texas Instruments
      Qhalid Fareed, Texas Instrument
      Yoga Saripalli, Texas Instruments
      Dong Seup Lee, Texas Instruments
      Ethan Lee, Texas Instruments
      Pinghai Hao, Texas Instruments
      Seetharaman Sridhar, Texas Instruments
      Sameer Pendharkar, Texas Instruments
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  • Hartlove, Jason

    Meta
  • Hayasaka, A.

    Sumitomo Electric Industries, Ltd.
    • 2.2.1.2024 (Invited) High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz

      S. Yoshida, Sumitomo Electric Industries, Ltd.
      K. Makiyama,, Sumitomo Electric Industries, Ltd.
      A. Hayasaka, Sumitomo Electric Industries, Ltd.
      Isao Makabe, Sumitomo Electric Industries, Ltd.
      Ken Nakata, Sumitomo Electric Industries, Ltd.
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  • Hayashi, K.

    Kanazawa University
    • 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies

      N. Tokuda, Kanazawa University
      T. Matsumoto, Kanazawa University
      X. Zhang, Kanazawa University
      K. Sato, Kanazawa University
      K. Kobayashi, Kanazawa University
      K. Ichikawa, Kanazawa University
      K. Hayashi, Kanazawa University
      T. Inokuma, Kanazawa University
      S. Yamasaki, Kanazawa University
      C. E. Nebel, Kanazawa University
      M. Ogura, Kanazawa University
      H. Kato, Kanazawa University
      T. Makino, Kanazawa University
      D. Takeuchi, Kanazawa University
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  • Herlocker, Jon

    Tignis, Inc.
  • Heuken, M.

    AIXTRON SE
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Heylen, N.

    Imec
    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Hilt, Oliver

    Ferdinand-Braun-Institut (FBH)
    • 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents

      Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
      Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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    • 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates

      Enrico Brusaterra, Ferdinand-Braun-Institut
      Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
      Alexander Külberg, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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    • 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs

      Hossein Yazdani, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
      Hady Yacoub, Ferdinand-Braun-Institut (FBH)
      Amer Bassal, Ferdinand-Braun-Institut (FBH)
      Taylor Moule, Ferdinand-Braun-Institut (FBH)
      Joost Wartena, Ferdinand-Braun-Institut (FBH)
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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  • Ho, Yang-Ching

    Chang Gung University
    • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

      Chong-Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Yong-Xiang Zhuang, Chang Gung University
      Yang-Ching Ho, Chang Gung University
      Chen-Kang Chuang, Chang Gung University
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
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  • Ho, Yu-Li

    WIN Semiconductors Corp.
    • 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression

      Wayne Lin, WIN Semiconductors Corp
      Wen-Hsin Wu, WIN Semiconductors Corporation
      Chien-Rong Yu, WIN Semiconductors Corp.
      Yu-Li Ho, WIN Semiconductors Corp.
      Edison Chou, WIN Semiconductors Corp.
      Jia-Jyun Guo, WIN Semiconductors Corp.
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
      Yu-Syuan Lin, WIN Semiconductors Corp.
      Cheng-Kao Lin, WIN Semiconductors Corp.
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  • Hoang, Vince

    MACOM Technology
    • 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing

      Pradeep Waduge, MACOM Technology Solutions
      Debdas Pal, MACOM Technology
      Peter Ersland, Macom Technology Solutions
      Sam June, MACOM Technology
      Chris Samson, MACOM Technology
      Vince Hoang, MACOM Technology
      Shanali Weerasinghe, MACOM Technology
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  • Hobart, Karl D.

    U.S. Naval Research Laboratory
    • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Geoffrey M. Foster, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Vladimir Odnoblyudov, Qromis, Inc.
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Holzer, Eric

    Tignis, Inc.
    • 10.2.4.2024 Benefits of Implementing AI/ML Controllers for Semiconductor Manufacturing, Including Multi-Tool Co-Optimization

      Eric Holzer, Tignis, Inc.
      Mario Faria, Tignis, Inc.
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  • Hopkins, J.

    KLA Corporation (SPTS Division)
    • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

      A. Croot, KLA Corporation (SPTS Division)
      B. Jones, Swansea University
      J. Mitchell, Swansea University, KLA Corporation (SPTS Division)
      Huma Ashraf, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
      J. Hopkins, KLA Corporation (SPTS Division)
      O. J. Guy, Swansea University
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  • Hsiao, Fu-Chen

    University of Illinois at Urbana-Champaign
    • 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures

      Robert Kaufman, University of Illinois at Urbana-Champaign
      Raman Kumar, University of Illinois at Urbana-Champaign
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
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  • Huang, Chingen

    Unikorn Semiconductor
    • 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend

      Sam Chen, Unikorn Semiconductor
      HaoMin Ku, Unikorn Semiconductor
      Chingen Huang, Unikorn Semiconductor
      TzuLing Yang, Unikorn Semiconductor
      Jimmy Shen, Unikorn Semiconductor
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  • Huang, Chong-Rong

    Chang Gung University
    • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

      Chong-Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Yong-Xiang Zhuang, Chang Gung University
      Yang-Ching Ho, Chang Gung University
      Chen-Kang Chuang, Chang Gung University
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
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  • Hugon, X.

    ALEDIA SAS
    • 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays

      Gilet M. Broell, ALEDIA SAS
      M. Mairy, ALEDIA SAS
      P. Tchoulfian, ALEDIA SAS
      C. Talagrand, ALEDIA SAS
      T. Ludurczak, ALEDIA SAS
      T. Lacave, ALEDIA SAS
      I-C Robin, ALEDIA SAS
      X. Hugon, ALEDIA SAS
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  • Ichikawa, K.

    Kanazawa University
    • 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies

      N. Tokuda, Kanazawa University
      T. Matsumoto, Kanazawa University
      X. Zhang, Kanazawa University
      K. Sato, Kanazawa University
      K. Kobayashi, Kanazawa University
      K. Ichikawa, Kanazawa University
      K. Hayashi, Kanazawa University
      T. Inokuma, Kanazawa University
      S. Yamasaki, Kanazawa University
      C. E. Nebel, Kanazawa University
      M. Ogura, Kanazawa University
      H. Kato, Kanazawa University
      T. Makino, Kanazawa University
      D. Takeuchi, Kanazawa University
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  • Inokuma, T.

    Kanazawa University
    • 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies

      N. Tokuda, Kanazawa University
      T. Matsumoto, Kanazawa University
      X. Zhang, Kanazawa University
      K. Sato, Kanazawa University
      K. Kobayashi, Kanazawa University
      K. Ichikawa, Kanazawa University
      K. Hayashi, Kanazawa University
      T. Inokuma, Kanazawa University
      S. Yamasaki, Kanazawa University
      C. E. Nebel, Kanazawa University
      M. Ogura, Kanazawa University
      H. Kato, Kanazawa University
      T. Makino, Kanazawa University
      D. Takeuchi, Kanazawa University
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  • Iwaya, M.

    Meijo University
    • 8.2.1.2024 (Invited) In-situ epitaxial growth control of GaN-based vertical-cavity surface-emitting lasers

      T. Takeuchi, Meijo University
      S. Kamiyama, Meijo University
      M. Iwaya, Meijo University
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  • J. Chen, Kevin

    The Hong Kong University of Science and Technology
  • Jacobs, Alan

    U.S. Naval Research Laboratory, Washington DC
    • 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes

      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Daniel G. Georgiev, University of Toledo, Toledo OH
      Andrew Koehler, Naval Research Laboratory
      Raghav Khanna, University of Toledo, Toledo OH
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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    • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Geoffrey M. Foster, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Vladimir Odnoblyudov, Qromis, Inc.
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Jafarpoorchekab, H.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Jaffal, A.

    Yole Intelligence
    • 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?

      Eric Virey, Yole Développement
      Raphael Mermet-Lyaudoz, Yole Developpment
      Zine Bouhamri, Yole Développement
      A. Jaffal, Yole Intelligence
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  • Jang, H.

    Kyungpook National University
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Jennings, M

    KLA Corporation, SPTS Technologies Division, Swansea University
    • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

      A. Croot, KLA Corporation (SPTS Division)
      B. Jones, Swansea University
      J. Mitchell, Swansea University, KLA Corporation (SPTS Division)
      Huma Ashraf, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
      J. Hopkins, KLA Corporation (SPTS Division)
      O. J. Guy, Swansea University
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  • Jeon, Yong-Soo

    Kyungpook National University
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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  • Ji, Xiaoyang

    University of Bristol
    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Jo, H. B.

    Kyungpook National University
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Joh, Jungwoo

    Texas Instruments
    • 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap

      Jungwoo Joh, Texas Instruments
      Qhalid Fareed, Texas Instrument
      Yoga Saripalli, Texas Instruments
      Dong Seup Lee, Texas Instruments
      Ethan Lee, Texas Instruments
      Pinghai Hao, Texas Instruments
      Seetharaman Sridhar, Texas Instruments
      Sameer Pendharkar, Texas Instruments
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  • John, P. T.

    AIXTRON SE
    • 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

      H. Hahn, AIXTRON SE
      C. Mauder, AIXTRON SE
      M. Marx, AIXTRON SE
      Z. Gao, AIXTRON SE
      P. Lauffer, AIXTRON SE
      O. Schon, AIXTRON SE
      P. T. John, AIXTRON SE
      S. Banerjee, imec
      P. Cardinael, Imec and Université catholique de Louvain
      J. P. Raskin, Université catholique de Louvain
      B. Parvais, imec & Vrije Universiteit Brussels
      lin, imec
      D. Fahle, AIXTRON SE
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  • Johnson, Vincent

    Finwave Semiconductor Inc
    • 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications

      Vincent Johnson, Finwave Semiconductor Inc
      Zev Pogrebin, Finwave Semiconductor Inc
      Mark Dipsey, Finwave Semiconductor Inc
      Hal S. Emmer, Finwave Semiconductor Inc
      Yuxuan Zhang, Finwave Semiconductor Inc
      Dongfei Pei, Finwave Semiconductor Inc
      Bin Lu, Finwave Semiconductor Inc
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  • Jones, B.

    Swansea University
    • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

      A. Croot, KLA Corporation (SPTS Division)
      B. Jones, Swansea University
      J. Mitchell, Swansea University, KLA Corporation (SPTS Division)
      Huma Ashraf, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
      J. Hopkins, KLA Corporation (SPTS Division)
      O. J. Guy, Swansea University
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  • June, Sam

    MACOM Technology
    • 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing

      Pradeep Waduge, MACOM Technology Solutions
      Debdas Pal, MACOM Technology
      Peter Ersland, Macom Technology Solutions
      Sam June, MACOM Technology
      Chris Samson, MACOM Technology
      Vince Hoang, MACOM Technology
      Shanali Weerasinghe, MACOM Technology
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  • Kamiyama, S.

    Meijo University
    • 8.2.1.2024 (Invited) In-situ epitaxial growth control of GaN-based vertical-cavity surface-emitting lasers

      T. Takeuchi, Meijo University
      S. Kamiyama, Meijo University
      M. Iwaya, Meijo University
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  • Kao, Hsuan-Ling

    Chang Gung University,
    • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

      Chong-Rong Huang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Chao-Wei Chiu, Chang Gung University
      Hsuan-Ling Kao, Chang Gung University,
      Yong-Xiang Zhuang, Chang Gung University
      Yang-Ching Ho, Chang Gung University
      Chen-Kang Chuang, Chang Gung University
      Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
      Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
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  • Kato, H.

    Kanazawa University
    • 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies

      N. Tokuda, Kanazawa University
      T. Matsumoto, Kanazawa University
      X. Zhang, Kanazawa University
      K. Sato, Kanazawa University
      K. Kobayashi, Kanazawa University
      K. Ichikawa, Kanazawa University
      K. Hayashi, Kanazawa University
      T. Inokuma, Kanazawa University
      S. Yamasaki, Kanazawa University
      C. E. Nebel, Kanazawa University
      M. Ogura, Kanazawa University
      H. Kato, Kanazawa University
      T. Makino, Kanazawa University
      D. Takeuchi, Kanazawa University
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  • Kaufman, Robert

    University of Illinois at Urbana-Champaign
    • 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures

      Robert Kaufman, University of Illinois at Urbana-Champaign
      Raman Kumar, University of Illinois at Urbana-Champaign
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
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  • Kawahara, M.

    SHIN-ETSU CHEMICAL Co., Ltd
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Kazemi, Samira

    KLA Corporation
    • 3.1.3.2024 Optimization of AlScN Etch Processes Ensuring Minimum Bottom Electrode Loss

      Samira Kazemi, KLA Corporation
      M Jennings, KLA Corporation, SPTS Technologies Division, Swansea University
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  • Khaled, A.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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  • Khanna, Raghav

    University of Toledo, Toledo OH
  • Kim, D. H.

    KANC
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Kim, Dae-Hyun

    Kyungpook National University
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Kim, H. J.

    Kyungpook National University
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Kim, JG

    QSI
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Kim, SK

    QSI
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Kim, Ted

    QSI
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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  • Kim, Yonghyun

    QSI
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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  • Kish, Fred

    North Carolina State Iniversary
  • Klamkin, Jonathan

    Aeluma, Inc.
    • 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes

      Jonathan Klamkin, Aeluma, Inc.
      Matthew Dummer, Aeluma, Inc.
      Bei Shi, Aeluma, Inc.
      Bowen Song, Aeluma, Inc.
      Simone Suran Brunelli, Aeluma, Inc.
      Michael McGivney, Aeluma, Inc.
      Robert Buller, Aeluma, Inc.
      Wilmer Barraza, Aeluma, Inc.
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  • Kobayashi, K.

    Kanazawa University
    • 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies

      N. Tokuda, Kanazawa University
      T. Matsumoto, Kanazawa University
      X. Zhang, Kanazawa University
      K. Sato, Kanazawa University
      K. Kobayashi, Kanazawa University
      K. Ichikawa, Kanazawa University
      K. Hayashi, Kanazawa University
      T. Inokuma, Kanazawa University
      S. Yamasaki, Kanazawa University
      C. E. Nebel, Kanazawa University
      M. Ogura, Kanazawa University
      H. Kato, Kanazawa University
      T. Makino, Kanazawa University
      D. Takeuchi, Kanazawa University
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  • Kobayashi, T.

    Mitsubishi Electric Corporation
    • 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar

      E. Yagyu, Mitsubishi Electric Corporation
      D. Tsunami, Mitsubishi Electric Corporation
      T. Matsuura, Mitsubishi Electric Corporation
      T. Furuhata, Mitsubishi Electric Corporation
      M. Nakamura, Mitsubishi Electric Corporation
      T. Matsuda, Mitsubishi Electric Corporation
      K. Kuwata, Mitsubishi Electric Corporation
      T. Kobayashi, Mitsubishi Electric Corporation
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  • Kobayashi, Takahiro

    Matsuda Sangyo Co., Ltd.
    • 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes

      Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
      Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
      Masatoshi Koyama, Osaka Institute of Technology
      Yuichiro Shindo, Precious Metals Materials Division, Matsuda Sangyo Co., Ltd.
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  • Koehler, Andrew

    Naval Research Laboratory
    • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Geoffrey M. Foster, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Vladimir Odnoblyudov, Qromis, Inc.
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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  • Konishi, S.

    SHIN-ETSU CHEMICAL Co., Ltd
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Koyama, Masatoshi

    Osaka Institute of Technology
    • 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes

      Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
      Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
      Masatoshi Koyama, Osaka Institute of Technology
      Yuichiro Shindo, Precious Metals Materials Division, Matsuda Sangyo Co., Ltd.
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  • Ku, HaoMin

    Unikorn Semiconductor
    • 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend

      Sam Chen, Unikorn Semiconductor
      HaoMin Ku, Unikorn Semiconductor
      Chingen Huang, Unikorn Semiconductor
      TzuLing Yang, Unikorn Semiconductor
      Jimmy Shen, Unikorn Semiconductor
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  • Kuball, Martin

    University of Bristol, Bristol, UK,
    • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

      Daniel Francis, Akash Systems, San Francisco, CA, USA
      Sai Charan Vanjari, University of Bristol
      Xiaoyang Ji, University of Bristol
      Tatyana Feygelson, Naval Research Laboratory
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Marko Tadjer, University of Toledo, Toledo OH
      Travis J. Anderson, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Bradford Pate, Naval Research Laboratory
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Matthew Smith, University of Bristol
      Martin Kuball, University of Bristol, Bristol, UK,
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    • 10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs

      Zeina Abdallah, University of Bristol, Bristol, UK
      James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
      Martin Kuball, University of Bristol, Bristol, UK,
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  • Külberg, Alexander

    Ferdinand-Braun-Institut (FBH)
    • 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates

      Enrico Brusaterra, Ferdinand-Braun-Institut
      Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
      Alexander Külberg, Ferdinand-Braun-Institut (FBH)
      Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
      Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
      Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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  • Kumar, A.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Kumar, Raman

    University of Illinois at Urbana-Champaign
    • 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures

      Robert Kaufman, University of Illinois at Urbana-Champaign
      Raman Kumar, University of Illinois at Urbana-Champaign
      Fu-Chen Hsiao, University of Illinois at Urbana-Champaign
      John M Dallesasse, University of Illinois at Urbana-Champaign
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  • Kunert, B.

    Imec
    • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

      N. Collaert, Imec
      R. Alcotte, Imec
      A. Alian, Imec
      M. Asad, Imec
      I. Bagal, Imec
      S. Banerjee, imec
      G. Boccardi, Imec
      P. Cardinael, Imec and Université catholique de Louvain
      I. Comart, imec & Vrije Universiteit Brussels
      D. Desset, Imec
      R. ElKashlan, Imec
      F. Filice, Imec
      G. Gramegna, Imec
      H. Jafarpoorchekab, Imec
      A. Khaled, Imec
      A. Kumar, Imec
      B. Kunert, Imec
      Y. Mols, Imec
      B. O’Sullivan, Imec
      S. Park, Imec
      U. Peralagu, Imec
      N. Pinho, Imec
      A. Rathi, Imec
      A. Sibaja-Hernandez, Imec
      S. Sinha, Imec
      D. Smellie, Imec
      X. Sun, Imec
      A. Vais, Imec
      B. Vanhouche, Imec
      B. Vermeersch, Imec
      D. Xiao, Imec
      S. Yadav, Imec
      D. Yan, Imec
      H. Yu, Imec
      Y. Zhang, Imec
      J. Van Driessche, Imec
      P. Wambacq, Imec
      M. Peeters, Imec
      B. Parvais, imec & Vrije Universiteit Brussels
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    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Kuwata, K.

    Mitsubishi Electric Corporation
    • 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar

      E. Yagyu, Mitsubishi Electric Corporation
      D. Tsunami, Mitsubishi Electric Corporation
      T. Matsuura, Mitsubishi Electric Corporation
      T. Furuhata, Mitsubishi Electric Corporation
      M. Nakamura, Mitsubishi Electric Corporation
      T. Matsuda, Mitsubishi Electric Corporation
      K. Kuwata, Mitsubishi Electric Corporation
      T. Kobayashi, Mitsubishi Electric Corporation
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  • Kwon, H. M.

    Polytech, Incheon
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Kwon, Hyuk-Min

    QSI
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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  • Lacave, T.

    ALEDIA SAS
    • 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays

      Gilet M. Broell, ALEDIA SAS
      M. Mairy, ALEDIA SAS
      P. Tchoulfian, ALEDIA SAS
      C. Talagrand, ALEDIA SAS
      T. Ludurczak, ALEDIA SAS
      T. Lacave, ALEDIA SAS
      I-C Robin, ALEDIA SAS
      X. Hugon, ALEDIA SAS
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  • Lal, R.

    Transphorm Inc
    • 5.0.1.2024 GaN Power: the solution that is not SiC

      Davide Bisi, Transphorm Inc.
      Geetak Gupta, Transphorm Inc.
      C. J. Neufeld, Transphorm Inc
      R. Lal, Transphorm Inc
      P. Zuk, Transphorm Inc
      L. Shen, Transphorm Inc
      P. Parikh, Transphorm Inc
      Umesh Mishra, Transphorm also Dean of Engineering UCSB
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  • Langer, R.

    Imec
    • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

      G. Boccardi, Imec
      A. Vais, Imec
      A. Kumar, Imec
      S. Yadav, Imec
      Y. Mols, Imec
      R. Alcotte, Imec
      L. Witters, Imec
      J. De Backer, Imec
      A. Mingardi, Imec
      A. Milenin, Imec
      K. Vandersmissen, Imec
      N. Heylen, Imec
      K. Ceulemans, Imec
      D. Goossens, Imec
      F. Sebaai, Imec
      J-P Soulié, Imec
      R. Langer, Imec
      B. Kunert, Imec
      B. Parvais, imec vzw, Leuven, Belgium
      N. Collaert, Imec
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  • Lauffer, P.

    AIXTRON SE
  • Lee, D.

    Coherent Corp.
    • 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC

      J. A. Turcaud, Coherent Corp.
      D. Lee, Coherent Corp.
      D. Rossman, Coherent Corp.
      J. Schuur, Coherent Corp.
      R. Chebi, Coherent Corp.
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  • Lee, Dong Seup

    Texas Instruments
    • 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap

      Jungwoo Joh, Texas Instruments
      Qhalid Fareed, Texas Instrument
      Yoga Saripalli, Texas Instruments
      Dong Seup Lee, Texas Instruments
      Ethan Lee, Texas Instruments
      Pinghai Hao, Texas Instruments
      Seetharaman Sridhar, Texas Instruments
      Sameer Pendharkar, Texas Instruments
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  • Lee, Ethan

    Texas Instruments
    • 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap

      Jungwoo Joh, Texas Instruments
      Qhalid Fareed, Texas Instrument
      Yoga Saripalli, Texas Instruments
      Dong Seup Lee, Texas Instruments
      Ethan Lee, Texas Instruments
      Pinghai Hao, Texas Instruments
      Seetharaman Sridhar, Texas Instruments
      Sameer Pendharkar, Texas Instruments
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  • Lee, In-Geun

    School of Electronic and Electrical Engineering, Kyungpook National University
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Lee, J. H.

    Kyungpook National University
    • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

      J. H. Yoo, Kyungpook National University
      H. B. Jo, Kyungpook National University
      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Su-Min Choi, Kyungpook National University
      H. J. Kim, Kyungpook National University
      W. S. Park, Kyungpook National University
      H. Jang, Kyungpook National University
      C. S. Shin, Kyungpook National University
      K. S. Seo, KANC
      S. H. Shin, Polytech, Incheon
      H. M. Kwon, Polytech, Incheon
      SK Kim, QSI
      JG Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      J. H. Lee, Kyungpook National University
      D. H. Kim, KANC
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  • Lee, Jae-Hak

    Kyungpook National University
    • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

      In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
      Yong-Soo Jeon, Kyungpook National University
      Yonghyun Kim, QSI
      Jacob Yun, QSI
      Ted Kim, QSI
      Hyuk-Min Kwon, QSI
      Seung Heon Shin, Korea Polytechnics
      Jae-Hak Lee, Kyungpook National University
      Kyunghoon Yang, Korea Advanced Institute of Science and Technology
      Dae-Hyun Kim, Kyungpook National University
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  • Lee, Rainier

    Skyworks Solutions, Inc.
    • 11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity

      Stephanie Y. Chang, Skyworks Solutions, Inc.
      Tom Brown, Skyworks Solutions, Inc.
      Randy Bryie, Skyworks Solutions, Inc.
      Rainier Lee, Skyworks Solutions, Inc.
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  • Lee, Sangho

    Georgia Institute of Technology
    • 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market

      W. Alan Doolittle, Georgia Institute of Technology
      Habib Ahmad, Georgia Institute of Technology
      Christopher M. Matthews, Georgia Institute of Technology
      Keisuke Motoki, Georgia Institute of Technology
      Sangho Lee, Georgia Institute of Technology
      Emily N. Marshall, Georgia Institute of Technology
      Amanda L. Tang, Georgia Institute of Technology
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  • Leib, Jürgen

    Fraunhofer IISB
    • 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

      Eric Guiot, SOITEC
      Frédéric Allibert, SOITEC
      Jürgen Leib, Fraunhofer IISB
      Tom Becker, Fraunhofer IISB
      Oleg Rusch, Fraunhofer IISB
      Alexis Drouin, SOITEC S.A.
      Walter Schwarzenbach, SOITEC
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  • Liao, C.-C

    VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

      M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
      S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
      M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
      C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
      Karen Geens, imec, Leuven, Belgium
      A. Vohra, imec, Leuven, Belgium
      H. De Pauw, CMST, imec & Ghent University
      Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
      S. Decoutere, imec
      H. Hahn, AIXTRON SE
      M. Heuken, AIXTRON SE
      K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • Liao, Michael E.

    National Research Council Postdoctoral Fellow, Residing at NRL
    • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

      James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
      Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
      Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
      Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
      Geoffrey M. Foster, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Vladimir Odnoblyudov, Qromis, Inc.
      Marko J. Tadjer, U.S. Naval Research Laboratory
      Karl D. Hobart, U.S. Naval Research Laboratory
      Travis J. Anderson, U.S. Naval Research Laboratory
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  • lin,

    imec
    • 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

      H. Hahn, AIXTRON SE
      C. Mauder, AIXTRON SE
      M. Marx, AIXTRON SE
      Z. Gao, AIXTRON SE
      P. Lauffer, AIXTRON SE
      O. Schon, AIXTRON SE
      P. T. John, AIXTRON SE
      S. Banerjee, imec
      P. Cardinael, Imec and Université catholique de Louvain
      J. P. Raskin, Université catholique de Louvain
      B. Parvais, imec & Vrije Universiteit Brussels
      lin, imec
      D. Fahle, AIXTRON SE
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  • Lin, Che-Kai

    WIN Semiconductors Corporation
    • 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression

      Wayne Lin, WIN Semiconductors Corp
      Wen-Hsin Wu, WIN Semiconductors Corporation
      Chien-Rong Yu, WIN Semiconductors Corp.
      Yu-Li Ho, WIN Semiconductors Corp.
      Edison Chou, WIN Semiconductors Corp.
      Jia-Jyun Guo, WIN Semiconductors Corp.
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
      Yu-Syuan Lin, WIN Semiconductors Corp.
      Cheng-Kao Lin, WIN Semiconductors Corp.
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  • Lin, Cheng-Kao

    WIN Semiconductors Corp.
    • 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression

      Wayne Lin, WIN Semiconductors Corp
      Wen-Hsin Wu, WIN Semiconductors Corporation
      Chien-Rong Yu, WIN Semiconductors Corp.
      Yu-Li Ho, WIN Semiconductors Corp.
      Edison Chou, WIN Semiconductors Corp.
      Jia-Jyun Guo, WIN Semiconductors Corp.
      Che-Kai Lin, WIN Semiconductors Corporation
      Wei-Chou Wang, WIN Semiconductors Corporation
      Yu-Syuan Lin, WIN Semiconductors Corp.
      Cheng-Kao Lin, WIN Semiconductors Corp.
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  • Lin, Cheng-Kuo

    WIN Semiconductors Corp.
  • Lin, Eric K.

    National Institute of Standards and Technology
    • 9.0.1.2024 CHIPS for America: A Historic Investment in Semiconductor Technology

      Eric K. Lin, National Institute of Standards and Technology
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