Halhoul, Houssam

Ferdinand-Braun-Institut (FBH)
- 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
  
  Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
  
  Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs
Hwang, Jinwoo

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Kawashimo, Atsushi

Matsuda Sangyo Co., Ltd.
- 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes
  
  Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
  
  Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
  
  Masatoshi Koyama, Osaka Institute of Technology
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
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Mermet-Lyaudoz, Raphael

Yole Group
- 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?
  
  Eric Virey, Yole Group
  
  Raphael Mermet-Lyaudoz, Yole Group
  
  Zine Bouhamri, Yole Group
  
  Ali Jaffal, Yole Group
  
  6.2.1.2024 Will microLED succeed in high volume consumer applications
Xiao, D.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Zettler, J.-T

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Abdallah, Zeina

University of Bristol
- 10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs
  
  Zeina Abdallah, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Abraham, J.

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Adrian, A.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Ahmad, Habib

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Alcotte, R.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Alian, A.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Allford, Craig

Cardiff University
- 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Craig Allford, Cardiff University
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University
  
  Peter M. Smowton, Cardiff University
  
  8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
Allibert, Frédéric

SOITEC
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Almeida, Carlos

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Anderson, Travis J.

U.S. Naval Research Laboratory
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Anjali, Anjali

University of Bristol
- 11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
  
  Anjali Anjali, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Jr-Tai Chen, SweGaN AB
  
  Martin Kuball, University of Bristol
  
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Asad, M.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Ashraf, Huma

KLA Corporation (SPTS Division)
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
Bagal, I.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Baker, Jack

Cardiff University
- 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Craig Allford, Cardiff University
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University
  
  Peter M. Smowton, Cardiff University
  
  8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
Bakeroot, Benoit

imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Banerjee, S.

imec
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Barraza, Wilmer

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
Basceri, C.

Qromis, Inc.
Bassal, Amer

Ferdinand-Braun-Institut (FBH)
- 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs
  
  Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
  
  Hady Yacoub, Ferdinand-Braun-Institut (FBH)
  
  Amer Bassal, Ferdinand-Braun-Institut (FBH)
  
  Taylor Moule, Ferdinand-Braun-Institut (FBH)
  
  Joost Wartena, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
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Bathurst, L.

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Becker, Tom

Fraunhofer IISB
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Bertoni, M.

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Binetti, M.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Bisi, Davide

Transphorm Inc.
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Black, T.

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Boccardi, G.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Bouhamri, Zine

Yole Group
- 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?
  
  Eric Virey, Yole Group
  
  Raphael Mermet-Lyaudoz, Yole Group
  
  Zine Bouhamri, Yole Group
  
  Ali Jaffal, Yole Group
  
  6.2.1.2024 Will microLED succeed in high volume consumer applications
Brand, T.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Broda, M.

Northrop Grumman Mission Systems
- 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing
  
  A. Molina, Northrop Grumman Mission Systems
  
  B. Grisafe, Northrop Grumman Mission Systems
  
  M. Broda, Northrop Grumman Mission Systems
  
  H. K. Nguyen, Northrop Grumman Mission Center
  
  J. S. Mason, Northrop Grumman Mission Systems
  
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Broell, Gilet M.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Brown, Tom

Skyworks Solutions, Inc.
- 11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity
  
  Stephanie Y. Chang, Skyworks Solutions, Inc.
  
  Tom Brown, Skyworks Solutions, Inc.
  
  Randy Bryie, Skyworks Solutions, Inc.
  
  Rainier Lee, Skyworks Solutions, Inc.
  
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Brunelli, Simone Suran

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
Brunner, Frank

Ferdinand-Braun-Institut (FBH)
- 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
  
  Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
  
  Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
Brusaterra, Enrico

Ferdinand-Braun-Institut (FBH)
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
Bryie, Randy

Skyworks Solutions, Inc.
- 11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity
  
  Stephanie Y. Chang, Skyworks Solutions, Inc.
  
  Tom Brown, Skyworks Solutions, Inc.
  
  Randy Bryie, Skyworks Solutions, Inc.
  
  Rainier Lee, Skyworks Solutions, Inc.
  
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Buller, Robert

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
Cao, Lina

Keysight Technologies
- 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes
  
  Z. Zhu, University of Notre Dame
  
  Lina Cao, Keysight Technologies
  
  Yu Duan, University of Notre Dame
  
  Wesley Turner, University of Notre Dame
  
  Jinqiao Xie, Qorvo Inc
  
  Patrick Fay, University of Notre Dame
  
  8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region
Cardinael, P.

Imec and Université catholique de Louvain
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Carson, B. S.

University of California, Los Angeles
Ceulemans, K.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Chang, Kuo-Jen

National Chung-Shan Institute of Science and Technology
Chang, Li-Cheng

WIN Semiconductors Corp.
- 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Li-Cheng Chang, WIN Semiconductors Corp.
  
  Jung-Tao Chung, WIN Semiconductors Corp
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
Chang, Stephanie Y.

Skyworks Solutions, Inc.
Charnas,, Adam

Purdue University
- 3.2.1.2024 (Invited) Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation Frequency
  
  Adam Charnas,, Purdue University
  
  Dongqi Zheng, Purdue University
  
  Peide D. Ye, Purdue University
  
  3.2.1.2024 Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation
Chaw, Derek

University of Illinois at Urbana-Champaign
- 6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
- 8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
Chebi, R.

Coherent Corp.
- 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
  
  J. A. Turcaud, Coherent Corp.
  
  D. Lee, Coherent Corp.
  
  D. Rossman, Coherent Corp.
  
  J. Schuur, Coherent Corp.
  
  R. Chebi, Coherent Corp.
  
  4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing
Chen, Chih-Tien

National Chung-Shan Institute of Science and Technology
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Chen, Chun-Han

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Chen, Hsiang

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Chen, Jr-Tai

SweGaN AB
- 11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
  
  Anjali Anjali, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Jr-Tai Chen, SweGaN AB
  
  Martin Kuball, University of Bristol
  
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Chen, Sam

Unikorn Semiconductor
- 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend
  
  Sam Chen, Unikorn Semiconductor
  
  HaoMin Ku, Unikorn Semiconductor
  
  Chingen Huang, Unikorn Semiconductor
  
  TzuLing Yang, Unikorn Semiconductor
  
  Jimmy Shen, Unikorn Semiconductor
  
  6.2.2.2024 Micro LED Technology and Platform Trend
Chen, Tao

The Hong Kong University of Science and Technology
- 2.1.2.2024 Expanding the Scope of GaN Power Integration
  
  Kevin J. Chen, The Hong Kong University of Science and Technology
  
  Sirui Feng, The Hong Kong University of Science and Technology
  
  Tao Chen, The Hong Kong University of Science and Technology
  
  Zheyang Zheng, The Hong Kong University of Science and Technology
  
  Jin Wei, The Hong Kong University of Science and Technology
  
  Gang Lyu, The Hong Kong University of Science and Technology
  
  Li Zhang, The Hong Kong University of Science and Technology
  
  2.1.2.2024 Expanding the Scope of GaN Power Integration
Chen, Zequan

University of Bristol
- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Chevtchenko, S. A.

Ferdinand-Braun-Institut (FBH)
- 11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors
  
  S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
  
  I. Ostermay, Ferdinand-Braun-Institut (FBH)
  
  S. Troppenz, Ferdinand-Braun-Institut (FBH)
  
  J. Würfl, Ferdinand-Braun-Institut (FBH)
  
  O. Hilt, Ferdinand-Braun-Institut (FBH)
  
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Chiu, Chao-Wei

Chang Gung University
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Chiu, Hsien-Chin

Chang Gung University
Chiu, J.

VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Chiu, Yi-Shiang

National Chi Nan University
- 12.0.15.2024 Deterioration of ZnO Nanorod Photodetectors in Saline Vapor
  
  Deng-Yi Wang, National Yang Ming Chiao Tung University
  
  Yi-Shiang Chiu, National Chi Nan University
  
  Sang-Hao Lin, National Chi Nan University
  
  YewChung Sermon Wu, National Yang Ming Chiao Tung University
  
  Hsiang Chen, National Chi Nan University
  
  Chao-Sung Lai, Chang Gung University & Chang Gung Memorial Hospital
  
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Choi, Su-Min

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Chou, Edison

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Chuang, Chen-Kang

Chang Gung University
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Chung, Jung-Tao

WIN Semiconductors Corp
- 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Li-Cheng Chang, WIN Semiconductors Corp.
  
  Jung-Tao Chung, WIN Semiconductors Corp
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
Coll, P. Guimerá

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Collaert, N.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Comart, I.

imec & Vrije Universiteit Brussels
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Cornwell, D.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Croot, A.

KLA Corporation (SPTS Division)
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
Cubero, Joaquin Currier

Skyworks Solutions, Inc.
- 10.2.3.2024 Leveraging Smart Factory Principles for Chemical Usage and Cost Reductions
  
  Mark J. Miller, Skyworks Solutions Inc.
  
  Joaquin Currier Cubero, Skyworks Solutions, Inc.
  
  M. Arif Zeeshan, Skyworks Solutions Inc.
  
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D. Dupuis, Russell

Georgia Institute of Technology
- 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
  
  Zhiyu Xu, Georgia Institute of Technology,
  
  Theeradetch Detchprohm, Georgia Institute of Technology
  
  Shyh-Chiang Shen, Georgia Institute of Technology
  
  A. Nepomuk Otte, Georgia Institute of Technology
  
  Russell D. Dupuis, Georgia Institute of Technology
  
  7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas
Dameron, A.

Forge Nano
- 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency
  
  D. Lindblad, Forge Nano
  
  S. Harris, Forge Nano
  
  A. Wang, Forge Nano
  
  L. Mueller, Forge Nano
  
  A. Dameron, Forge Nano
  
  M. Weimer, Forge Nano
  
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Davies, Gareth

Swansea University
- 12.0.1.2024 Gold-free Tantalum and Titanium-based Ohmic Contacts for Gallium Nitride HEMT Devices
  
  Gareth Davies, Swansea University
  
  Andrew Withey, Vishay Ltd.
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  Jon E. Evans, Centre for Integrative Semiconductor Materials (CISM),
  
  Mike Jennings, Centre for Integrative Semiconductor Materials (CISM),
  
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Davies, J. Iwan

IQE plc
- 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Craig Allford, Cardiff University
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University
  
  Peter M. Smowton, Cardiff University
  
  8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
De Backer, J.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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De Pauw, H.

CMST, imec & Ghent University
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Decobert, Jean

III-V Lab
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Decoutere, S.

imec
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Desset, D.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Detchprohm, Theeradetch

Georgia Institute of Technology
- 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
  
  Zhiyu Xu, Georgia Institute of Technology,
  
  Theeradetch Detchprohm, Georgia Institute of Technology
  
  Shyh-Chiang Shen, Georgia Institute of Technology
  
  A. Nepomuk Otte, Georgia Institute of Technology
  
  Russell D. Dupuis, Georgia Institute of Technology
  
  7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas
Dhara, Sushovan

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Dheenan, Ashok

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Di Maso, Peter

Cambridge GaN Devices
- 6.1.2.2024 (Invited) GaN Power ICs bring highest levels of sustainability through manufacturing processes and end-equipment applications.
  
  Peter Di Maso, Cambridge GaN Devices
  
  6.1.2.2024 GaN Power ICs bring highest levels of sustainability through manufacturing
Dipsey, Mark

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Doolittle, W. Alan

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Drouin, Alexis

SOITEC
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Duan, Yu

University of Notre Dame
- 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes
  
  Z. Zhu, University of Notre Dame
  
  Lina Cao, Keysight Technologies
  
  Yu Duan, University of Notre Dame
  
  Wesley Turner, University of Notre Dame
  
  Jinqiao Xie, Qorvo Inc
  
  Patrick Fay, University of Notre Dame
  
  8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region
Dummer, Matthew

Aeluma, Inc.
ElKashlan, R.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Emmer, Hal S.

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Ersland, Peter

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Espenhahn, Leah

University of Illinois at Urbana-Champaign
- 8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical Aperture Definition in Optical Coatings
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Leah Espenhahn, University of Illinois at Urbana-Champaign
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical
Evans, Jon E.

Centre for Integrative Semiconductor Materials (CISM),
- 12.0.1.2024 Gold-free Tantalum and Titanium-based Ohmic Contacts for Gallium Nitride HEMT Devices
  
  Gareth Davies, Swansea University
  
  Andrew Withey, Vishay Ltd.
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  Jon E. Evans, Centre for Integrative Semiconductor Materials (CISM),
  
  Mike Jennings, Centre for Integrative Semiconductor Materials (CISM),
  
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Fahle, D.

AIXTRON SE
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
Fareed, Qhalid

Texas Instrument
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Faria, Mario

Tignis, Inc.
- 10.2.4.2024 Benefits of Implementing AI/ML Controllers for Semiconductor Manufacturing, Including Multi-Tool Co-Optimization
  
  Eric Holzer, Tignis, Inc.
  
  Mario Faria, Tignis, Inc.
  
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Fay, Patrick

University of Notre Dame
- 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes
  
  Z. Zhu, University of Notre Dame
  
  Lina Cao, Keysight Technologies
  
  Yu Duan, University of Notre Dame
  
  Wesley Turner, University of Notre Dame
  
  Jinqiao Xie, Qorvo Inc
  
  Patrick Fay, University of Notre Dame
  
  8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region
Feng, Milton

University of Illinois Urbana-Champaign
- 6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
- 8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
Feng, Sirui

The Hong Kong University of Science and Technology
- 2.1.2.2024 Expanding the Scope of GaN Power Integration
  
  Kevin J. Chen, The Hong Kong University of Science and Technology
  
  Sirui Feng, The Hong Kong University of Science and Technology
  
  Tao Chen, The Hong Kong University of Science and Technology
  
  Zheyang Zheng, The Hong Kong University of Science and Technology
  
  Jin Wei, The Hong Kong University of Science and Technology
  
  Gang Lyu, The Hong Kong University of Science and Technology
  
  Li Zhang, The Hong Kong University of Science and Technology
  
  2.1.2.2024 Expanding the Scope of GaN Power Integration
Ferrante, Frank

Wolfspeed
- 5.0.3.2024 (Invited) Large Scale Commercialization of Silicon Carbide for EV
  
  Frank Ferrante, Wolfspeed
  
  5.0.3.2023 Large Scale CommercializaƟon of Silicon Carbide for EV
Feygelson, Tatyana

U. S. Naval Research Laboratory
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Filice, F.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Foster, Geoffrey M.

U.S. Naval Research Laboratory
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
Francis, Daniel

Akash Systems, San Francisco, CA, USA
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Friedrichs, Peter

Infineon Technologies AG
- 5.0.2.2024 (Invited) SiC power devices as key enabling components for the green energy transition – how the growth journey began and will go on
  
  Peter Friedrichs, Infineon Technologies AG
  
  5.0.2.2024 SiC power devices as key enabling components for the green energy transition
Furuhata, T.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Gao, Z.

AIXTRON SE
Geens, Karen

imec, Leuven, Belgium
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Georgiev, Daniel G.

University of Toledo, Toledo OH
Gillgrass, Sara

Cardiff University
- 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Craig Allford, Cardiff University
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University
  
  Peter M. Smowton, Cardiff University
  
  8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
Goorsky, M. S.

University of California, Los Angeles
- 12.0.7.2024 Lapping and Chemical Mechanical Polishing of wide and ultra-wide bandgap semiconductors
  
  K. Pan, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  M.S. Goorsky, University of California, Los Angeles
  
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- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Goorsky, M.S.

University of California, Los Angeles
- 12.0.7.2024 Lapping and Chemical Mechanical Polishing of wide and ultra-wide bandgap semiconductors
  
  K. Pan, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  M.S. Goorsky, University of California, Los Angeles
  
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- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Goossens, D.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Gramegna, G.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Grisafe, B.

Northrop Grumman Mission Systems
- 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing
  
  A. Molina, Northrop Grumman Mission Systems
  
  B. Grisafe, Northrop Grumman Mission Systems
  
  M. Broda, Northrop Grumman Mission Systems
  
  H. K. Nguyen, Northrop Grumman Mission Center
  
  J. S. Mason, Northrop Grumman Mission Systems
  
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Grupen-Shemansky, Melissa

SEMI
- 10.2.1.2024 (Invited) CHIPS Act and its Impact on the Compound Semiconductor Industry
  
  Melissa Grupen-Shemansky, SEMI
  
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Guiot, Eric

SOITEC
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Guo, Jia-Jyun

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Gupta, Geetak

Transphorm Inc.
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Guy, O. J.

Centre for Integrative Semiconductor Materials (CISM),
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
Haberland, K.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Hahn, H.

AIXTRON SE
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Han, Mao-Tung

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Hao, Pinghai

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Harris, S.

Forge Nano
- 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency
  
  D. Lindblad, Forge Nano
  
  S. Harris, Forge Nano
  
  A. Wang, Forge Nano
  
  L. Mueller, Forge Nano
  
  A. Dameron, Forge Nano
  
  M. Weimer, Forge Nano
  
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Hartlove, Jason

Meta
Hayasaka, A.

Sumitomo Electric Industries, Ltd.
- 2.2.1.2024 (Invited) High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz
  
  S. Yoshida, Sumitomo Electric Industries, Ltd.
  
  K. Makiyama,, Sumitomo Electric Industries, Ltd.
  
  A. Hayasaka, Sumitomo Electric Industries, Ltd.
  
  Isao Makabe, Sumitomo Electric Industries, Ltd.
  
  Ken Nakata, Sumitomo Electric Industries, Ltd.
  
  2.2.1.2024 High Power Nitrogen-polar GaNInAlN HEMT
Hayashi, K.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Herlocker, Jonathan L.

Tignis, Inc.
- 10.2.2.2024 (Invited) Why Every Fab Should be Using AI
  
  Jonathan L. Herlocker, Tignis, Inc.
  
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Heuken, M.

AIXTRON SE
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Heylen, N.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Hilt, O.

Ferdinand-Braun-Institut (FBH)
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
- 11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors
  
  S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
  
  I. Ostermay, Ferdinand-Braun-Institut (FBH)
  
  S. Troppenz, Ferdinand-Braun-Institut (FBH)
  
  J. Würfl, Ferdinand-Braun-Institut (FBH)
  
  O. Hilt, Ferdinand-Braun-Institut (FBH)
  
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Hilt, Oliver

Ferdinand-Braun-Institut (FBH)
- 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
  
  Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
  
  Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
- 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs
  
  Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
  
  Hady Yacoub, Ferdinand-Braun-Institut (FBH)
  
  Amer Bassal, Ferdinand-Braun-Institut (FBH)
  
  Taylor Moule, Ferdinand-Braun-Institut (FBH)
  
  Joost Wartena, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
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Ho, Yang-Ching

Chang Gung University
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Ho, Yu-Li

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Hoang, Vince

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Hobart, Karl D.

U.S. Naval Research Laboratory
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Holtz, P. O.

Polar Light Technologies AB & Linköping University
- 12.0.14.2024 Pyramidal LEDs – a novel bottom-up concept for small, bright and efficient light emitters for AR based LED projectors and displays.
  
  I Martinovic, Polar Light Technologies AB & Linköping University
  
  S. P. Le, Polar Light Technologies AB & Linköping University
  
  C. W. Hsu, Polar Light Technologies AB & Linköping University
  
  L. Rullik, Polar Light Technologies AB
  
  P. O. Holtz, Polar Light Technologies AB & Linköping University
  
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Holzer, Eric

Tignis, Inc.
- 10.2.4.2024 Benefits of Implementing AI/ML Controllers for Semiconductor Manufacturing, Including Multi-Tool Co-Optimization
  
  Eric Holzer, Tignis, Inc.
  
  Mario Faria, Tignis, Inc.
  
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Hopkins, Janet

KLA Corporation (SPTS Division)
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
Hsiao, Fu-Chen

North Carolina State University
- 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures
  
  Robert Kaufman, University of Illinois at Urbana-Champaign
  
  Raman Kumar, City College of New York
  
  Fu-Chen Hsiao, North Carolina State University
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected
Hsu, C. W.

Polar Light Technologies AB & Linköping University
- 12.0.14.2024 Pyramidal LEDs – a novel bottom-up concept for small, bright and efficient light emitters for AR based LED projectors and displays.
  
  I Martinovic, Polar Light Technologies AB & Linköping University
  
  S. P. Le, Polar Light Technologies AB & Linköping University
  
  C. W. Hsu, Polar Light Technologies AB & Linköping University
  
  L. Rullik, Polar Light Technologies AB
  
  P. O. Holtz, Polar Light Technologies AB & Linköping University
  
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Huang, Chingen

Unikorn Semiconductor
- 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend
  
  Sam Chen, Unikorn Semiconductor
  
  HaoMin Ku, Unikorn Semiconductor
  
  Chingen Huang, Unikorn Semiconductor
  
  TzuLing Yang, Unikorn Semiconductor
  
  Jimmy Shen, Unikorn Semiconductor
  
  6.2.2.2024 Micro LED Technology and Platform Trend
Huang, Chong-Rong

Chang Gung University
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Huang, Peng

University of Bristol
- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Hugon, X.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Huynh, K.

University of California, Los Angeles
- 12.0.7.2024 Lapping and Chemical Mechanical Polishing of wide and ultra-wide bandgap semiconductors
  
  K. Pan, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  M.S. Goorsky, University of California, Los Angeles
  
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- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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- 12.0.12.2024 Towards Realization of Large-Scale β-Ga2O3 Composite Wafers
  
  M. E. Liao, Apex Microdevices
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  K. Pan, University of California Los Angeles
  
  B. S. Carson, University of California, Los Angeles
  
  L. Matto, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Ichikawa, K.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Inokuma, T.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Iwaya, M.

Meijo University
- 8.2.1.2024 (Invited) In-situ epitaxial growth control of GaN-based vertical-cavity surface-emitting lasers
  
  T. Takeuchi, Meijo University
  
  S. Kamiyama, Meijo University
  
  M. Iwaya, Meijo University
  
  8.2.1.2024 In-situ epitaxial growth control of
J. Chen, Kevin

The Hong Kong University of Science and Technology
Jacobs, Alan

U.S. Naval Research Laboratory
- 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Daniel G. Georgiev, University of Toledo, Toledo OH
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Raghav Khanna, University of Toledo, Toledo OH
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  2.1.3.2024
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Jafarpoorchekab, H.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Jaffal, Ali

Yole Group
- 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?
  
  Eric Virey, Yole Group
  
  Raphael Mermet-Lyaudoz, Yole Group
  
  Zine Bouhamri, Yole Group
  
  Ali Jaffal, Yole Group
  
  6.2.1.2024 Will microLED succeed in high volume consumer applications
Jang, H.

KANC
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Jennings, M.

Swansea University
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
Jennings, Mike

Centre for Integrative Semiconductor Materials (CISM),
- 12.0.1.2024 Gold-free Tantalum and Titanium-based Ohmic Contacts for Gallium Nitride HEMT Devices
  
  Gareth Davies, Swansea University
  
  Andrew Withey, Vishay Ltd.
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  Jon E. Evans, Centre for Integrative Semiconductor Materials (CISM),
  
  Mike Jennings, Centre for Integrative Semiconductor Materials (CISM),
  
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Jeon, Yong-Soo

Kyungpook National University
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
Ji, Xiaoyang

University of Bristol
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Jo, H.-B.

Kyungpook National University & KETI
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Joh, Jungwoo

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
John, P. T.

AIXTRON SE
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
Johnson, Greg

Carl Zeiss Microscopy
- 12.0.3.2024 3D Visualization and Characterization of SiC MOSFET Junctions Using EBIC and FIB-SEM Tomography
  
  Heiko Stegmann, Carl Zeiss Microscopy
  
  Greg Johnson, Carl Zeiss Microscopy
  
  David Taraci, Carl Zeiss Microscopy
  
  Andreas Rummel, Kleindiek Nanotechnik
  
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Johnson, Vincent

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Jones, B.

Swansea University
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
June, Sam

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Kamishetty, S.

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Kamiyama, S.

Meijo University
- 8.2.1.2024 (Invited) In-situ epitaxial growth control of GaN-based vertical-cavity surface-emitting lasers
  
  T. Takeuchi, Meijo University
  
  S. Kamiyama, Meijo University
  
  M. Iwaya, Meijo University
  
  8.2.1.2024 In-situ epitaxial growth control of
Kang, Gyuhyeok

Kumoh National Institute of Technology
- 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Soontak Kwon, KEC, Republic of Korea
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Kao, Hsuan-Ling

Chang Gung University,
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Kato, H.

National Institute of Advanced Industrial Science and Technology
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Kaufman, Robert

University of Illinois at Urbana-Champaign
- 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures
  
  Robert Kaufman, University of Illinois at Urbana-Champaign
  
  Raman Kumar, City College of New York
  
  Fu-Chen Hsiao, North Carolina State University
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected
Kawahara, M.

SHIN-ETSU CHEMICAL Co., Ltd
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Kazemi, Samira

KLA Corporation (SPTS Division)
- 3.1.3.2024 Optimization of AlScN Etch Processes Ensuring Minimum Bottom Electrode Loss
  
  Samira Kazemi, KLA Corporation (SPTS Division)
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  3.1.3.2024 Optimization of AlScN Etch Processes Ensuring Minimum Bottom Electrode Loss
Khaled, A.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Khanna, Raghav

University of Toledo, Toledo OH
Kim, Chaeyun

Kumoh National Institute of Technology
- 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Kim, D.-H.

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Kim, Dae-Hyun

Kyungpook National University
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Kim, H. J.

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Kim, Hyo-Jin

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
- 12.0.9.2024 Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
  
  Wan-Soo Park, Kyungpook National University
  
  Hyeok-Jun Lee, Kyungpook National University
  
  Hyo-Jin Kim, Kyungpook National University
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyounghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
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Kim, JG

QSI
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Kim, Sangyeob

Kumoh National Institute of Technology
- 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Soontak Kwon, KEC, Republic of Korea
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Kim, SK

QSI
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Kim, Ted

QSI
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
Kim, Yonghyun

QSI
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
Kish, Fred

North Carolina State University
Klamkin, Jonathan

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
Kobayashi, K.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Kobayashi, T.

Furuno Electric Co. Ltd.
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Kobayashi, Takahiro

Matsuda Sangyo Co., Ltd.
- 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes
  
  Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
  
  Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
  
  Masatoshi Koyama, Osaka Institute of Technology
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
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Koehler, Andrew

U. S. Naval Research Laboratory
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
Konishi, S.

SHIN-ETSU CHEMICAL Co., Ltd
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Koyama, Masatoshi

Osaka Institute of Technology
- 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes
  
  Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
  
  Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
  
  Masatoshi Koyama, Osaka Institute of Technology
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
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Ku, HaoMin

Unikorn Semiconductor
- 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend
  
  Sam Chen, Unikorn Semiconductor
  
  HaoMin Ku, Unikorn Semiconductor
  
  Chingen Huang, Unikorn Semiconductor
  
  TzuLing Yang, Unikorn Semiconductor
  
  Jimmy Shen, Unikorn Semiconductor
  
  6.2.2.2024 Micro LED Technology and Platform Trend
Kuball, Martin

University of Bristol
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs
  
  Zeina Abdallah, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
  
  Anjali Anjali, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Jr-Tai Chen, SweGaN AB
  
  Martin Kuball, University of Bristol
  
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- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Kuball, Martin

University of Bristol
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs
  
  Zeina Abdallah, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
  
  Anjali Anjali, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Jr-Tai Chen, SweGaN AB
  
  Martin Kuball, University of Bristol
  
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- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Külberg, Alexander

Ferdinand-Braun-Institut (FBH)
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
Kumar, A.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Kumar, Raman

City College of New York
- 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures
  
  Robert Kaufman, University of Illinois at Urbana-Champaign
  
  Raman Kumar, City College of New York
  
  Fu-Chen Hsiao, North Carolina State University
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected
Kunert, B.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Kuo, Yao-Wen

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Kurth, C.

Qromis, Inc.
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Kuwata, K.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Kwon, H. M.

Polytech, Incheon
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Kwon, Hyuk-Min

QSI
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
Kwon, Soontak

KEC, Republic of Korea
- 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Soontak Kwon, KEC, Republic of Korea
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Lacave, T.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Lagowski, J.

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Lai, Chao-Sung

Chang Gung University & Chang Gung Memorial Hospital
- 12.0.15.2024 Deterioration of ZnO Nanorod Photodetectors in Saline Vapor
  
  Deng-Yi Wang, National Yang Ming Chiao Tung University
  
  Yi-Shiang Chiu, National Chi Nan University
  
  Sang-Hao Lin, National Chi Nan University
  
  YewChung Sermon Wu, National Yang Ming Chiao Tung University
  
  Hsiang Chen, National Chi Nan University
  
  Chao-Sung Lai, Chang Gung University & Chang Gung Memorial Hospital
  
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Lal, R.

Transphorm Inc
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Langer, R.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Lauffer, P.

AIXTRON SE
Le, S. P.

Polar Light Technologies AB & Linköping University
- 12.0.14.2024 Pyramidal LEDs – a novel bottom-up concept for small, bright and efficient light emitters for AR based LED projectors and displays.
  
  I Martinovic, Polar Light Technologies AB & Linköping University
  
  S. P. Le, Polar Light Technologies AB & Linköping University
  
  C. W. Hsu, Polar Light Technologies AB & Linköping University
  
  L. Rullik, Polar Light Technologies AB
  
  P. O. Holtz, Polar Light Technologies AB & Linköping University
  
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Lee, D.

Coherent Corp.
- 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
  
  J. A. Turcaud, Coherent Corp.
  
  D. Lee, Coherent Corp.
  
  D. Rossman, Coherent Corp.
  
  J. Schuur, Coherent Corp.
  
  R. Chebi, Coherent Corp.
  
  4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing
Lee, Dong Seup

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Lee, Ethan

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Lee, Hyeok-Jun

Kyungpook National University
- 12.0.9.2024 Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
  
  Wan-Soo Park, Kyungpook National University
  
  Hyeok-Jun Lee, Kyungpook National University
  
  Hyo-Jin Kim, Kyungpook National University
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyounghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
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Lee, In-Geun

Kyungpook National University
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Lee, J. H.

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Lee, Jae-Hak

Kyungpook National University
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
- 12.0.9.2024 Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
  
  Wan-Soo Park, Kyungpook National University
  
  Hyeok-Jun Lee, Kyungpook National University
  
  Hyo-Jin Kim, Kyungpook National University
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyounghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
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Lee, Rainier

Skyworks Solutions, Inc.
- 11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity
  
  Stephanie Y. Chang, Skyworks Solutions, Inc.
  
  Tom Brown, Skyworks Solutions, Inc.
  
  Randy Bryie, Skyworks Solutions, Inc.
  
  Rainier Lee, Skyworks Solutions, Inc.
  
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Lee, Sangho

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Leib, Jürgen

Fraunhofer IISB
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Li, Yung-Hui

Hon Hai Research Institute
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Liao, C.-C

VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Liao, M. E.

Apex Microdevices
- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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- 12.0.12.2024 Towards Realization of Large-Scale β-Ga2O3 Composite Wafers
  
  M. E. Liao, Apex Microdevices
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  K. Pan, University of California Los Angeles
  
  B. S. Carson, University of California, Los Angeles
  
  L. Matto, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Liao, Michael E.

National Research Council Postdoctoral Fellow, Residing at NRL
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
lin,

imec
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
Lin, Che-Kai

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Lin, Cheng-Kao

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Lin, Cheng-Kuo

WIN Semiconductors Corp.
Lin, Chia-Feng

National Chung Hsing University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Lin, Eric K.

CHIPS Research and Development Office, National Institute of Standards and Technology
- 9.0.1.2024 CHIPS for America: A Historic Investment in Semiconductor Technology
  
  Eric K. Lin, CHIPS Research and Development Office, National Institute of Standards and Technology
  
  9.0.1.2024 CHIPS for America
Lin, Hsi-Tsung

WIN Semiconductors Corp.
- 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Li-Cheng Chang, WIN Semiconductors Corp.
  
  Jung-Tao Chung, WIN Semiconductors Corp
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
Lin, Sang-Hao

National Chi Nan University
- 12.0.15.2024 Deterioration of ZnO Nanorod Photodetectors in Saline Vapor
  
  Deng-Yi Wang, National Yang Ming Chiao Tung University
  
  Yi-Shiang Chiu, National Chi Nan University
  
  Sang-Hao Lin, National Chi Nan University
  
  YewChung Sermon Wu, National Yang Ming Chiao Tung University
  
  Hsiang Chen, National Chi Nan University
  
  Chao-Sung Lai, Chang Gung University & Chang Gung Memorial Hospital
  
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Lin, Wayne

WIN Semiconductors Corp
Lin, You-Li

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Lin, Yu-Syuan

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Lindblad, D.

Forge Nano
- 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency
  
  D. Lindblad, Forge Nano
  
  S. Harris, Forge Nano
  
  A. Wang, Forge Nano
  
  L. Mueller, Forge Nano
  
  A. Dameron, Forge Nano
  
  M. Weimer, Forge Nano
  
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Liu, Zetai

University of Illinois at Urbana-Champaign
- 6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
- 8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
Long, Y.

University of California Los Angeles
- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Lörchner-Gerdaus, C.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Lu, Bin

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Ludurczak, T.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Lundh, James Spencer

National Research Council Postdoctoral Fellow, Residing at NRL
- 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Daniel G. Georgiev, University of Toledo, Toledo OH
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Raghav Khanna, University of Toledo, Toledo OH
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  2.1.3.2024
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Lyu, Gang

The Hong Kong University of Science and Technology
- 2.1.2.2024 Expanding the Scope of GaN Power Integration
  
  Kevin J. Chen, The Hong Kong University of Science and Technology
  
  Sirui Feng, The Hong Kong University of Science and Technology
  
  Tao Chen, The Hong Kong University of Science and Technology
  
  Zheyang Zheng, The Hong Kong University of Science and Technology
  
  Jin Wei, The Hong Kong University of Science and Technology
  
  Gang Lyu, The Hong Kong University of Science and Technology
  
  Li Zhang, The Hong Kong University of Science and Technology
  
  2.1.2.2024 Expanding the Scope of GaN Power Integration
M Dallesasse, John

University of Illinois at Urbana-Champaign
- 7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected Quantum Cascade Structures
  
  Robert Kaufman, University of Illinois at Urbana-Champaign
  
  Raman Kumar, City College of New York
  
  Fu-Chen Hsiao, North Carolina State University
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  7.2.3.2024 1.6 μm Lasing and Mid-Wave Infrared Detection in InP-Based Transistor-Injected
- 8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical Aperture Definition in Optical Coatings
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Leah Espenhahn, University of Illinois at Urbana-Champaign
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical
Mairy, M.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Makabe, Isao

Sumitomo Electric Industries, Ltd.
- 2.2.1.2024 (Invited) High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz
  
  S. Yoshida, Sumitomo Electric Industries, Ltd.
  
  K. Makiyama,, Sumitomo Electric Industries, Ltd.
  
  A. Hayasaka, Sumitomo Electric Industries, Ltd.
  
  Isao Makabe, Sumitomo Electric Industries, Ltd.
  
  Ken Nakata, Sumitomo Electric Industries, Ltd.
  
  2.2.1.2024 High Power Nitrogen-polar GaNInAlN HEMT
Makino, T.

National Institute of Advanced Industrial Science and Technology,
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Makiyama,, K.

Sumitomo Electric Industries, Ltd.
- 2.2.1.2024 (Invited) High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz
  
  S. Yoshida, Sumitomo Electric Industries, Ltd.
  
  K. Makiyama,, Sumitomo Electric Industries, Ltd.
  
  A. Hayasaka, Sumitomo Electric Industries, Ltd.
  
  Isao Makabe, Sumitomo Electric Industries, Ltd.
  
  Ken Nakata, Sumitomo Electric Industries, Ltd.
  
  2.2.1.2024 High Power Nitrogen-polar GaNInAlN HEMT
Marshall, Emily N.

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Martin, Paul S.

Mojo Vision
- 7.2.2.2024 (Invited) Micro-LED Maturation from beachhead in AR/VR to TAM of entire Display Market
  
  Paul S. Martin, Mojo Vision
  
  7.2.2.2024 Micro-LED Maturation from beachhead in ARVR to TAM of entire Display Market
Martinez, A.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Martinovic, I

Polar Light Technologies AB & Linköping University
- 12.0.14.2024 Pyramidal LEDs – a novel bottom-up concept for small, bright and efficient light emitters for AR based LED projectors and displays.
  
  I Martinovic, Polar Light Technologies AB & Linköping University
  
  S. P. Le, Polar Light Technologies AB & Linköping University
  
  C. W. Hsu, Polar Light Technologies AB & Linköping University
  
  L. Rullik, Polar Light Technologies AB
  
  P. O. Holtz, Polar Light Technologies AB & Linköping University
  
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Marx, M.

AIXTRON SE
Mason, J. S.

Northrop Grumman Mission Systems
- 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing
  
  A. Molina, Northrop Grumman Mission Systems
  
  B. Grisafe, Northrop Grumman Mission Systems
  
  M. Broda, Northrop Grumman Mission Systems
  
  H. K. Nguyen, Northrop Grumman Mission Center
  
  J. S. Mason, Northrop Grumman Mission Systems
  
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Masten, Hannah N.

National Research Council Postdoctoral Fellow, Residing at NRL
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Matsuda, T.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Matsumoto, T.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Matsuura, T.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Matthews, Christopher M.

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Matto, L.

University of California Los Angeles
- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
  Loading...
  
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Mauder, C.

AIXTRON SE
McGivney, Michael

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
McGlone, Joe

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Mekata, Y.

Sumitomo Electric Device Innovations, Inc.
- 8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
  
  T. Yoshida, Sumitomo Electric Devices Innovations, Inc.
  
  Y. Mekata, Sumitomo Electric Device Innovations, Inc.
  
  S. Nishizawa, Sumitomo Electric Device Innovations, Inc
  
  Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.
  
  8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
Merkle, A.P.

Crystal Sonic Inc.
- 12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates
  
  P. Guimerá Coll, Crystal Sonic Inc.
  
  T. Black, Crystal Sonic Inc.
  
  J. Abraham, Crystal Sonic Inc.
  
  S. Kamishetty, Crystal Sonic Inc.
  
  A.P. Merkle, Crystal Sonic Inc.
  
  L. Bathurst, Crystal Sonic Inc.
  
  M. Bertoni, Crystal Sonic Inc.
  
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Micha, D.

III-V Lab
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Milenin, A.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Miller, Mark J.

Skyworks Solutions Inc.
- 10.2.3.2024 Leveraging Smart Factory Principles for Chemical Usage and Cost Reductions
  
  Mark J. Miller, Skyworks Solutions Inc.
  
  Joaquin Currier Cubero, Skyworks Solutions, Inc.
  
  M. Arif Zeeshan, Skyworks Solutions Inc.
  
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Mingardi, A.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Mishra, U. K.

Transphorm Inc. & University of Santa Barbara California
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Mitchell, J.

KLA Corporation (SPTS Division)
- 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
  
  A. Croot, KLA Corporation (SPTS Division)
  
  B. Jones, Swansea University
  
  J. Mitchell, KLA Corporation (SPTS Division)
  
  Huma Ashraf, KLA Corporation (SPTS Division)
  
  M. Jennings, Swansea University
  
  Janet Hopkins, KLA Corporation (SPTS Division)
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
Mizuhashi, Shoei

Matsuda Sangyo Co., Ltd.
- 3.1.2.2024 Electrochemical Additive Selection for Non–Cyanide Gold Plating Bath for Uniform Thickness Gold Layer for GaAs Backside Metallization
  
  Shoei Mizuhashi, Matsuda Sangyo Co., Ltd.
  
  Yusuke Sato, Matsuda Sangyo Co., Ltd.
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
  3.1.2.2024 Electrochemical Additive Selection for Non–Cyanide Gold Plating Bath
Molina, A.

Northrop Grumman Mission Systems
- 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing
  
  A. Molina, Northrop Grumman Mission Systems
  
  B. Grisafe, Northrop Grumman Mission Systems
  
  M. Broda, Northrop Grumman Mission Systems
  
  H. K. Nguyen, Northrop Grumman Mission Center
  
  J. S. Mason, Northrop Grumman Mission Systems
  
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Mols, Y.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Motoki, Keisuke

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Moule, Taylor

Ferdinand-Braun-Institut (FBH)
- 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs
  
  Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
  
  Hady Yacoub, Ferdinand-Braun-Institut (FBH)
  
  Amer Bassal, Ferdinand-Braun-Institut (FBH)
  
  Taylor Moule, Ferdinand-Braun-Institut (FBH)
  
  Joost Wartena, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
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Mueller, L.

Forge Nano
- 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency
  
  D. Lindblad, Forge Nano
  
  S. Harris, Forge Nano
  
  A. Wang, Forge Nano
  
  L. Mueller, Forge Nano
  
  A. Dameron, Forge Nano
  
  M. Weimer, Forge Nano
  
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Murata, J.

Ritsumeikan University
- 3.1.1.2024 (Invited) Electrochemical Mechanical Polishing of SiC Wafer Using Solid Polymer Electrolyte
  
  J. Murata, Ritsumeikan University
  
  3.1.1.2024 Electrochemical Mechanical Polishing of SiC Wafer
Nakamura, M.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Nakata, Ken

Sumitomo Electric Industries, Ltd.
- 2.2.1.2024 (Invited) High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz
  
  S. Yoshida, Sumitomo Electric Industries, Ltd.
  
  K. Makiyama,, Sumitomo Electric Industries, Ltd.
  
  A. Hayasaka, Sumitomo Electric Industries, Ltd.
  
  Isao Makabe, Sumitomo Electric Industries, Ltd.
  
  Ken Nakata, Sumitomo Electric Industries, Ltd.
  
  2.2.1.2024 High Power Nitrogen-polar GaNInAlN HEMT
Nebel, C. E.

Kanazawa University & Diamond and Carbon Applications
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Néel, D.

III-V Lab
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Neufeld, C. J.

Transphorm Inc
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Nguyen, H. K.

Northrop Grumman Mission Center
- 11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing
  
  A. Molina, Northrop Grumman Mission Systems
  
  B. Grisafe, Northrop Grumman Mission Systems
  
  M. Broda, Northrop Grumman Mission Systems
  
  H. K. Nguyen, Northrop Grumman Mission Center
  
  J. S. Mason, Northrop Grumman Mission Systems
  
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Nichols, Roger

Keysight Technologies
- 9.0.2.2024 The Essential Role of Compound Semiconductors in 6G Wireless
  
  Roger Nichols, Keysight Technologies
  
  9.0.2.2024 The Essential Role of Compound Semiconductors in 6G Wireless
Nishizawa, S.

Sumitomo Electric Device Innovations, Inc
- 8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
  
  T. Yoshida, Sumitomo Electric Devices Innovations, Inc.
  
  Y. Mekata, Sumitomo Electric Device Innovations, Inc.
  
  S. Nishizawa, Sumitomo Electric Device Innovations, Inc
  
  Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.
  
  8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
O’Sullivan, B.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Odnoblyudov, V.

Qromis, inc.
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
Odnoblyudov, Vladimir

Qromis, Inc.
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
Ogura, M.

National Institute of Advanced Industrial Science and Technology
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Okamura, Yoshiko

Hiroshima University
- 7.1.3.2024 (Invited) Recovery of Constituent Elements and Crystal Growth of Compound Semiconductors using Marine Bacteria
  
  Yoriko Tominaga, Hiroshima University
  
  Yoshiko Okamura, Hiroshima University
  
  7.1.3.2024 Recovery of Constituent Elements and Crystal Growth
Ostermay, I.

Ferdinand-Braun-Institut (FBH)
- 11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors
  
  S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
  
  I. Ostermay, Ferdinand-Braun-Institut (FBH)
  
  S. Troppenz, Ferdinand-Braun-Institut (FBH)
  
  J. Würfl, Ferdinand-Braun-Institut (FBH)
  
  O. Hilt, Ferdinand-Braun-Institut (FBH)
  
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Otte, A. Nepomuk

Georgia Institute of Technology
- 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
  
  Zhiyu Xu, Georgia Institute of Technology,
  
  Theeradetch Detchprohm, Georgia Institute of Technology
  
  Shyh-Chiang Shen, Georgia Institute of Technology
  
  A. Nepomuk Otte, Georgia Institute of Technology
  
  Russell D. Dupuis, Georgia Institute of Technology
  
  7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas
Pal, Debdas

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Pan, K.

University of California Los Angeles
Parikh, P.

Transphorm Inc
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Park, S.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Park, W. S.

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Park, Wan-Soo

Kyungpook National University
- 12.0.9.2024 Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
  
  Wan-Soo Park, Kyungpook National University
  
  Hyeok-Jun Lee, Kyungpook National University
  
  Hyo-Jin Kim, Kyungpook National University
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyounghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
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Park, Yeongeun

Kumoh National Institute of Technology
- 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Soontak Kwon, KEC, Republic of Korea
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Parvais, B.

imec vzw, Leuven, Belgium
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Parvais, B.

imec & Vrije Universiteit Brussels
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Pate, Bradford

Naval Research Laboratory
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Patti, Robert

Nhanced Semiconductor
- 7.1.1.2024 Advanced Packaging, Heterogeneous Integration, and Foundry 2.0
  
  Robert Patti, Nhanced Semiconductor
  
  7.1.1.2024 Advanced Packaging, Heterogeneous Integration, and Foundry 2.0
Peeters, M.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Pei, Dongfei

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Pendharkar, Sameer

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Peralagu, U.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Pikul, Kevin P.

University of Illinois Urbana-Champagne
- 8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical Aperture Definition in Optical Coatings
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Leah Espenhahn, University of Illinois at Urbana-Champaign
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical
Pinho, N.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Pogrebin, Zev

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Pomeroy, James

University of Bristol
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs
  
  Zeina Abdallah, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
  
  Anjali Anjali, University of Bristol
  
  James Pomeroy, University of Bristol
  
  Jr-Tai Chen, SweGaN AB
  
  Martin Kuball, University of Bristol
  
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Rajan, Siddharth

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Raskin, J. P.

Université catholique de Louvain
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
Rathi, A.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Ravi, N.

University of California Los Angeles
- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Rezaei-Hartmann, N.

LayTec AG
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Ringel, Steven

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Robin, I-C

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Rossman, D.

Coherent Corp.
- 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
  
  J. A. Turcaud, Coherent Corp.
  
  D. Lee, Coherent Corp.
  
  D. Rossman, Coherent Corp.
  
  J. Schuur, Coherent Corp.
  
  R. Chebi, Coherent Corp.
  
  4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing
Rullik, L.

Polar Light Technologies AB
- 12.0.14.2024 Pyramidal LEDs – a novel bottom-up concept for small, bright and efficient light emitters for AR based LED projectors and displays.
  
  I Martinovic, Polar Light Technologies AB & Linköping University
  
  S. P. Le, Polar Light Technologies AB & Linköping University
  
  C. W. Hsu, Polar Light Technologies AB & Linköping University
  
  L. Rullik, Polar Light Technologies AB
  
  P. O. Holtz, Polar Light Technologies AB & Linköping University
  
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Rummel, Andreas

Kleindiek Nanotechnik
- 12.0.3.2024 3D Visualization and Characterization of SiC MOSFET Junctions Using EBIC and FIB-SEM Tomography
  
  Heiko Stegmann, Carl Zeiss Microscopy
  
  Greg Johnson, Carl Zeiss Microscopy
  
  David Taraci, Carl Zeiss Microscopy
  
  Andreas Rummel, Kleindiek Nanotechnik
  
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Rusch, Oleg

Fraunhofer IISB
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Samson, Chris

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Sanyal, Indraneel

University of Bristol
- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Saripalli, Yoga

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Sato, K.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Sato, Yusuke

Matsuda Sangyo Co., Ltd.
- 3.1.2.2024 Electrochemical Additive Selection for Non–Cyanide Gold Plating Bath for Uniform Thickness Gold Layer for GaAs Backside Metallization
  
  Shoei Mizuhashi, Matsuda Sangyo Co., Ltd.
  
  Yusuke Sato, Matsuda Sangyo Co., Ltd.
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
  3.1.2.2024 Electrochemical Additive Selection for Non–Cyanide Gold Plating Bath
Savtchouk, A.

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Schon, O.

AIXTRON SE
- 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
  
  H. Hahn, AIXTRON SE
  
  C. Mauder, AIXTRON SE
  
  M. Marx, AIXTRON SE
  
  Z. Gao, AIXTRON SE
  
  P. Lauffer, AIXTRON SE
  
  O. Schon, AIXTRON SE
  
  P. T. John, AIXTRON SE
  
  S. Banerjee, imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  J. P. Raskin, Université catholique de Louvain
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  lin, imec
  
  D. Fahle, AIXTRON SE
  
  2.2.3.2024 Depleted AlNSi interfaces for minimizing RF loss
Schrayer, B.

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Schuur, J.

Coherent Corp.
- 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
  
  J. A. Turcaud, Coherent Corp.
  
  D. Lee, Coherent Corp.
  
  D. Rossman, Coherent Corp.
  
  J. Schuur, Coherent Corp.
  
  R. Chebi, Coherent Corp.
  
  4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing
Schwarzenbach, Walter

SOITEC
- 6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
  
  Eric Guiot, SOITEC
  
  Frédéric Allibert, SOITEC
  
  Jürgen Leib, Fraunhofer IISB
  
  Tom Becker, Fraunhofer IISB
  
  Oleg Rusch, Fraunhofer IISB
  
  Alexis Drouin, SOITEC
  
  Walter Schwarzenbach, SOITEC
  
  6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate
Sebaai, F.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Seo, K. S.

KANC
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Seok, Ogyun

Kumoh National Institute of Technology
- 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Soontak Kwon, KEC, Republic of Korea
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Shah, P. J.

Apex Microdevices
- 12.0.10.2024 Large-Scale Thin-Film 128° Y-cut LiNbO3 on Sapphire via Wafer Bonding
  
  M. E. Liao, Apex Microdevices
  
  L. Matto, University of California Los Angeles
  
  K. Huynh, University of California, Los Angeles
  
  N. Ravi, University of California Los Angeles
  
  Y. Long, University of California Los Angeles
  
  P. J. Shah, Apex Microdevices
  
  M. S. Goorsky, University of California, Los Angeles
  
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Shekerov, I.

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Shen, Jimmy

Unikorn Semiconductor
- 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend
  
  Sam Chen, Unikorn Semiconductor
  
  HaoMin Ku, Unikorn Semiconductor
  
  Chingen Huang, Unikorn Semiconductor
  
  TzuLing Yang, Unikorn Semiconductor
  
  Jimmy Shen, Unikorn Semiconductor
  
  6.2.2.2024 Micro LED Technology and Platform Trend
Shen, L.

Transphorm Inc
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC
Shen, S.

VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Shen, Shyh-Chiang

Georgia Institute of Technology
- 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
  
  Zhiyu Xu, Georgia Institute of Technology,
  
  Theeradetch Detchprohm, Georgia Institute of Technology
  
  Shyh-Chiang Shen, Georgia Institute of Technology
  
  A. Nepomuk Otte, Georgia Institute of Technology
  
  Russell D. Dupuis, Georgia Institute of Technology
  
  7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas
Shi, Bei

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
Shin, C.-S.

KANC
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Shin, S. H.

Polytech, Incheon
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Shin, Seung Heon

Korea Polytechnics
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
Shindo, Yuichiro

Matsuda Sangyo Co., Ltd.
- 3.1.2.2024 Electrochemical Additive Selection for Non–Cyanide Gold Plating Bath for Uniform Thickness Gold Layer for GaAs Backside Metallization
  
  Shoei Mizuhashi, Matsuda Sangyo Co., Ltd.
  
  Yusuke Sato, Matsuda Sangyo Co., Ltd.
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
  3.1.2.2024 Electrochemical Additive Selection for Non–Cyanide Gold Plating Bath
- 11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes
  
  Atsushi Kawashimo, Matsuda Sangyo Co., Ltd.
  
  Takahiro Kobayashi, Matsuda Sangyo Co., Ltd.
  
  Masatoshi Koyama, Osaka Institute of Technology
  
  Yuichiro Shindo, Matsuda Sangyo Co., Ltd.
  
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Shutts, Samuel

Cardiff University
- 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Craig Allford, Cardiff University
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University
  
  Peter M. Smowton, Cardiff University
  
  8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
Sibaja-Hernandez, A.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Sinha, S.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Smellie, D.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Smith, Matthew

University of Bristol
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Smowton, Peter M.

Cardiff University
- 8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Craig Allford, Cardiff University
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University
  
  Peter M. Smowton, Cardiff University
  
  8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
Song, Bowen

Aeluma, Inc.
- 4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes
  
  Jonathan Klamkin, Aeluma, Inc.
  
  Matthew Dummer, Aeluma, Inc.
  
  Bei Shi, Aeluma, Inc.
  
  Bowen Song, Aeluma, Inc.
  
  Simone Suran Brunelli, Aeluma, Inc.
  
  Michael McGivney, Aeluma, Inc.
  
  Robert Buller, Aeluma, Inc.
  
  Wilmer Barraza, Aeluma, Inc.
  
  4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter
Soulié, J-P

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Spencer, Joseph

U.S. Naval Research Laboratory
- 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Geoffrey M. Foster, U.S. Naval Research Laboratory
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Vladimir Odnoblyudov, Qromis, Inc.
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Sridhar, Seetharaman

Texas Instruments
- 2.1.1.2024 Key Challenges in Process Development for Future High Voltage GaN Roadmap
  
  Jungwoo Joh, Texas Instruments
  
  Qhalid Fareed, Texas Instrument
  
  Yoga Saripalli, Texas Instruments
  
  Dong Seup Lee, Texas Instruments
  
  Ethan Lee, Texas Instruments
  
  Pinghai Hao, Texas Instruments
  
  Seetharaman Sridhar, Texas Instruments
  
  Sameer Pendharkar, Texas Instruments
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Stegmann, Heiko

Carl Zeiss Microscopy
- 12.0.3.2024 3D Visualization and Characterization of SiC MOSFET Junctions Using EBIC and FIB-SEM Tomography
  
  Heiko Stegmann, Carl Zeiss Microscopy
  
  Greg Johnson, Carl Zeiss Microscopy
  
  David Taraci, Carl Zeiss Microscopy
  
  Andreas Rummel, Kleindiek Nanotechnik
  
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Su, Patrick

University of Illinois at Urbana-Champaign
- 8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical Aperture Definition in Optical Coatings
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Leah Espenhahn, University of Illinois at Urbana-Champaign
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  8.2.3.2024 Polarization Control in Vertical-Cavity Surface-Emitting Lasers via Elliptical
Sun, X.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Tadjer, Marko

U.S. Naval Research Laboratory
- 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Daniel G. Georgiev, University of Toledo, Toledo OH
  
  Andrew Koehler, U. S. Naval Research Laboratory
  
  Raghav Khanna, University of Toledo, Toledo OH
  
  Marko J. Tadjer, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  2.1.3.2024

Tadjer, Marko J.

U.S. Naval Research Laboratory

8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL

Alan Jacobs, U.S. Naval Research Laboratory

Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL

Joseph Spencer, U.S. Naval Research Laboratory

Geoffrey M. Foster, U.S. Naval Research Laboratory

Andrew Koehler, U. S. Naval Research Laboratory

Vladimir Odnoblyudov, Qromis, Inc.

Marko J. Tadjer, U.S. Naval Research Laboratory

Karl D. Hobart, U.S. Naval Research Laboratory

Travis J. Anderson, U.S. Naval Research Laboratory

8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors

10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

Daniel Francis, Akash Systems, San Francisco, CA, USA

Sai Charan Vanjari, University of Bristol

Xiaoyang Ji, University of Bristol

Tatyana Feygelson, U. S. Naval Research Laboratory

Joseph Spencer, U.S. Naval Research Laboratory

Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL

Alan Jacobs, U.S. Naval Research Laboratory

James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL

Marko Tadjer, U.S. Naval Research Laboratory

Travis J. Anderson, U.S. Naval Research Laboratory

Karl D. Hobart, U.S. Naval Research Laboratory

Bradford Pate, Naval Research Laboratory

James Pomeroy, University of Bristol

Matthew Smith, University of Bristol

Martin Kuball, University of Bristol

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Takeuchi, D.

National Institute of Advanced Industrial Science and Technology
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Takeuchi, T.

Meijo University
- 8.2.1.2024 (Invited) In-situ epitaxial growth control of GaN-based vertical-cavity surface-emitting lasers
  
  T. Takeuchi, Meijo University
  
  S. Kamiyama, Meijo University
  
  M. Iwaya, Meijo University
  
  8.2.1.2024 In-situ epitaxial growth control of
Talagrand, C.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Tang, Amanda L.

Georgia Institute of Technology
- 10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market
  
  W. Alan Doolittle, Georgia Institute of Technology
  
  Habib Ahmad, Georgia Institute of Technology
  
  Christopher M. Matthews, Georgia Institute of Technology
  
  Keisuke Motoki, Georgia Institute of Technology
  
  Sangho Lee, Georgia Institute of Technology
  
  Emily N. Marshall, Georgia Institute of Technology
  
  Amanda L. Tang, Georgia Institute of Technology
  
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Tanigawa, K.

OKI ELECTRIC INDUSTRY Co., Ltd
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Taraci, David

Carl Zeiss Microscopy
- 12.0.3.2024 3D Visualization and Characterization of SiC MOSFET Junctions Using EBIC and FIB-SEM Tomography
  
  Heiko Stegmann, Carl Zeiss Microscopy
  
  Greg Johnson, Carl Zeiss Microscopy
  
  David Taraci, Carl Zeiss Microscopy
  
  Andreas Rummel, Kleindiek Nanotechnik
  
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Tchoulfian, P.

ALEDIA SAS
- 7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays
  
  Gilet M. Broell, ALEDIA SAS
  
  M. Mairy, ALEDIA SAS
  
  P. Tchoulfian, ALEDIA SAS
  
  C. Talagrand, ALEDIA SAS
  
  T. Ludurczak, ALEDIA SAS
  
  T. Lacave, ALEDIA SAS
  
  I-C Robin, ALEDIA SAS
  
  X. Hugon, ALEDIA SAS
  
  7.2.1.2024 Mass transfer of Efficient 5µm MicroLED Chips For Efficient and High
Thakkar, Nirav

Einnosys Technologies
- 12.0.13.2024 Plug-n-Play SECS/GEM for Legacy Equipment
  
  Nirav Thakkar, Einnosys Technologies
  
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Tokuda, N.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Tominaga, Yoriko

Hiroshima University
- 7.1.3.2024 (Invited) Recovery of Constituent Elements and Crystal Growth of Compound Semiconductors using Marine Bacteria
  
  Yoriko Tominaga, Hiroshima University
  
  Yoshiko Okamura, Hiroshima University
  
  7.1.3.2024 Recovery of Constituent Elements and Crystal Growth
Treidel, Eldad Bahat

Ferdinand-Braun-Institut (FBH)
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
Troppenz, S.

Ferdinand-Braun-Institut (FBH)
- 11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors
  
  S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
  
  I. Ostermay, Ferdinand-Braun-Institut (FBH)
  
  S. Troppenz, Ferdinand-Braun-Institut (FBH)
  
  J. Würfl, Ferdinand-Braun-Institut (FBH)
  
  O. Hilt, Ferdinand-Braun-Institut (FBH)
  
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Tsai, Shu-Hsiao

WIN Semiconductors Corp
- 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Li-Cheng Chang, WIN Semiconductors Corp.
  
  Jung-Tao Chung, WIN Semiconductors Corp
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
Tseng, Lung-Yi

WIN Semiconductors Corp.
- 3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Li-Cheng Chang, WIN Semiconductors Corp.
  
  Jung-Tao Chung, WIN Semiconductors Corp
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
Tsunami, D.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Turcaud, J. A.

Coherent Corp.
- 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
  
  J. A. Turcaud, Coherent Corp.
  
  D. Lee, Coherent Corp.
  
  D. Rossman, Coherent Corp.
  
  J. Schuur, Coherent Corp.
  
  R. Chebi, Coherent Corp.
  
  4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing
Turner, Wesley

University of Notre Dame
- 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes
  
  Z. Zhu, University of Notre Dame
  
  Lina Cao, Keysight Technologies
  
  Yu Duan, University of Notre Dame
  
  Wesley Turner, University of Notre Dame
  
  Jinqiao Xie, Qorvo Inc
  
  Patrick Fay, University of Notre Dame
  
  8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region
Twitchen, Daniel

Element Six Ltd.
- 10.1.2.2024 (Invited) A review of key developments and challenges in CVD diamond substrates for electronic device applications
  
  Daniel Twitchen, Element Six Ltd.
  
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Unger, Ralph-Stephan

Ferdinand-Braun-Institut (FBH)
- 2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
  
  Houssam Halhoul, Ferdinand-Braun-Institut (FBH)
  
  Ralph-Stephan Unger, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs
Uren, Michael J

University of Bristol
- 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
  
  Zequan Chen, University of Bristol
  
  Peng Huang, University of Bristol
  
  Indraneel Sanyal, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Michael J Uren, University of Bristol
  
  A. Vohra, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  Martin Kuball, University of Bristol
  
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Vais, A.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Vaissiere, N.

III-V Lab
- 6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
  
  Jean Decobert, III-V Lab
  
  N. Vaissiere, III-V Lab
  
  D. Micha, III-V Lab
  
  D. Néel, III-V Lab
  
  M. Binetti, LayTec AG
  
  A. Adrian, LayTec AG
  
  C. Lörchner-Gerdaus, LayTec AG
  
  D. Cornwell, LayTec AG
  
  N. Rezaei-Hartmann, LayTec AG
  
  T. Brand, LayTec AG
  
  A. Martinez, LayTec AG
  
  K. Haberland, LayTec AG
  
  J.-T Zettler, LayTec AG
  
  6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures
Van Driessche, J.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Vandersmissen, K.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Vanhouche, B.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Vanjari, Sai Charan

University of Bristol
- 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
  
  Daniel Francis, Akash Systems, San Francisco, CA, USA
  
  Sai Charan Vanjari, University of Bristol
  
  Xiaoyang Ji, University of Bristol
  
  Tatyana Feygelson, U. S. Naval Research Laboratory
  
  Joseph Spencer, U.S. Naval Research Laboratory
  
  Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Alan Jacobs, U.S. Naval Research Laboratory
  
  James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
  
  Marko Tadjer, U.S. Naval Research Laboratory
  
  Travis J. Anderson, U.S. Naval Research Laboratory
  
  Karl D. Hobart, U.S. Naval Research Laboratory
  
  Bradford Pate, Naval Research Laboratory
  
  James Pomeroy, University of Bristol
  
  Matthew Smith, University of Bristol
  
  Martin Kuball, University of Bristol
  
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Vendier, Olivier

Thales Alenia Space
- 8.1.1.2024 (Invited) RF packaging challenges for high efficiency, space compliant RF power Amplifier
  
  Olivier Vendier, Thales Alenia Space
  
  8.1.1.2024 RF packaging challenges for high efficiency, space compliant RF power Amplifier
Vermeersch, B.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Virey, Eric

Yole Group
- 6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?
  
  Eric Virey, Yole Group
  
  Raphael Mermet-Lyaudoz, Yole Group
  
  Zine Bouhamri, Yole Group
  
  Ali Jaffal, Yole Group
  
  6.2.1.2024 Will microLED succeed in high volume consumer applications
Vohra, A.

imec, Leuven, Belgium
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Waduge, Pradeep

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Wambacq, P.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Wang, A.

Forge Nano
- 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency
  
  D. Lindblad, Forge Nano
  
  S. Harris, Forge Nano
  
  A. Wang, Forge Nano
  
  L. Mueller, Forge Nano
  
  A. Dameron, Forge Nano
  
  M. Weimer, Forge Nano
  
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Wang, Deng-Yi

National Yang Ming Chiao Tung University
- 12.0.15.2024 Deterioration of ZnO Nanorod Photodetectors in Saline Vapor
  
  Deng-Yi Wang, National Yang Ming Chiao Tung University
  
  Yi-Shiang Chiu, National Chi Nan University
  
  Sang-Hao Lin, National Chi Nan University
  
  YewChung Sermon Wu, National Yang Ming Chiao Tung University
  
  Hsiang Chen, National Chi Nan University
  
  Chao-Sung Lai, Chang Gung University & Chang Gung Memorial Hospital
  
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Wang, Wei-Chou

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Wartena, Joost

Ferdinand-Braun-Institut (FBH)
- 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs
  
  Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
  
  Hady Yacoub, Ferdinand-Braun-Institut (FBH)
  
  Amer Bassal, Ferdinand-Braun-Institut (FBH)
  
  Taylor Moule, Ferdinand-Braun-Institut (FBH)
  
  Joost Wartena, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
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Weerasinghe, Shanali

MACOM Technology
- 11.1.3.2024 Novel Nichrome Thin Film Resistor Fabrication Approach in E-Beam Evaporation for High Volume Semiconductor Manufacturing
  
  Pradeep Waduge, MACOM Technology
  
  Debdas Pal, MACOM Technology
  
  Peter Ersland, MACOM Technology
  
  Sam June, MACOM Technology
  
  Chris Samson, MACOM Technology
  
  Vince Hoang, MACOM Technology
  
  Shanali Weerasinghe, MACOM Technology
  
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Wei, Jin

The Hong Kong University of Science and Technology
Weimer, M.

Forge Nano
- 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency
  
  D. Lindblad, Forge Nano
  
  S. Harris, Forge Nano
  
  A. Wang, Forge Nano
  
  L. Mueller, Forge Nano
  
  A. Dameron, Forge Nano
  
  M. Weimer, Forge Nano
  
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Wilson, B.

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Wilson, M.

Semilab SDI
- 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
  
  M. Wilson, Semilab SDI
  
  Carlos Almeida, Semilab SDI
  
  I. Shekerov, Semilab SDI
  
  B. Schrayer, Semilab SDI
  
  A. Savtchouk, Semilab SDI
  
  B. Wilson, Semilab SDI
  
  J. Lagowski, Semilab SDI
  
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Withey, Andrew

Vishay Ltd.
- 12.0.1.2024 Gold-free Tantalum and Titanium-based Ohmic Contacts for Gallium Nitride HEMT Devices
  
  Gareth Davies, Swansea University
  
  Andrew Withey, Vishay Ltd.
  
  O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
  
  Jon E. Evans, Centre for Integrative Semiconductor Materials (CISM),
  
  Mike Jennings, Centre for Integrative Semiconductor Materials (CISM),
  
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Witters, L.

Imec
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Wolf, Mihaela

Ferdinand-Braun-Institut (FBH)
- 4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
  
  Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
  
  Alexander Külberg, Ferdinand-Braun-Institut (FBH)
  
  Frank Brunner, Ferdinand-Braun-Institut (FBH)
  
  Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
  4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices
Wriedt, Nathan

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Wu, Haonan

University of Illinois at Urbana-Champaign
- 6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  6.2.4.2024 Develop Automated Oxide-Aperture Size Measurement for GaAs VCSELs
- 8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
  
  Derek Chaw, University of Illinois at Urbana-Champaign
  
  Haonan Wu, University of Illinois at Urbana-Champaign
  
  Zetai Liu, University of Illinois at Urbana-Champaign
  
  Milton Feng, University of Illinois Urbana-Champaign
  
  8.2.4.2024 Thermal Stability Enhancement of P-Metals Ohmic Contact in Oxide-VCSELs
Wu, Wen-Hsin

WIN Semiconductors Corporation
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Wu, YewChung Sermon

National Yang Ming Chiao Tung University
- 12.0.15.2024 Deterioration of ZnO Nanorod Photodetectors in Saline Vapor
  
  Deng-Yi Wang, National Yang Ming Chiao Tung University
  
  Yi-Shiang Chiu, National Chi Nan University
  
  Sang-Hao Lin, National Chi Nan University
  
  YewChung Sermon Wu, National Yang Ming Chiao Tung University
  
  Hsiang Chen, National Chi Nan University
  
  Chao-Sung Lai, Chang Gung University & Chang Gung Memorial Hospital
  
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Würfl, J.

Ferdinand-Braun-Institut (FBH)
- 11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors
  
  S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
  
  I. Ostermay, Ferdinand-Braun-Institut (FBH)
  
  S. Troppenz, Ferdinand-Braun-Institut (FBH)
  
  J. Würfl, Ferdinand-Braun-Institut (FBH)
  
  O. Hilt, Ferdinand-Braun-Institut (FBH)
  
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Wuu, Dong-sing

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Xie, Jinqiao

Qorvo Inc
- 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes
  
  Z. Zhu, University of Notre Dame
  
  Lina Cao, Keysight Technologies
  
  Yu Duan, University of Notre Dame
  
  Wesley Turner, University of Notre Dame
  
  Jinqiao Xie, Qorvo Inc
  
  Patrick Fay, University of Notre Dame
  
  8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region
Xu, Zhiyu

Georgia Institute of Technology,
- 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
  
  Zhiyu Xu, Georgia Institute of Technology,
  
  Theeradetch Detchprohm, Georgia Institute of Technology
  
  Shyh-Chiang Shen, Georgia Institute of Technology
  
  A. Nepomuk Otte, Georgia Institute of Technology
  
  Russell D. Dupuis, Georgia Institute of Technology
  
  7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas
Yacoub, Hady

Ferdinand-Braun-Institut (FBH)
- 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs
  
  Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
  
  Hady Yacoub, Ferdinand-Braun-Institut (FBH)
  
  Amer Bassal, Ferdinand-Braun-Institut (FBH)
  
  Taylor Moule, Ferdinand-Braun-Institut (FBH)
  
  Joost Wartena, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
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Yadav, S.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
- 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
  G. Boccardi, Imec
  
  A. Vais, Imec
  
  A. Kumar, Imec
  
  S. Yadav, Imec
  
  Y. Mols, Imec
  
  R. Alcotte, Imec
  
  L. Witters, Imec
  
  J. De Backer, Imec
  
  A. Mingardi, Imec
  
  A. Milenin, Imec
  
  K. Vandersmissen, Imec
  
  N. Heylen, Imec
  
  K. Ceulemans, Imec
  
  D. Goossens, Imec
  
  F. Sebaai, Imec
  
  J-P Soulié, Imec
  
  R. Langer, Imec
  
  B. Kunert, Imec
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  N. Collaert, Imec
  
  4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform
  
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Yagyu, E.

Mitsubishi Electric Corporation
- 2.2.2.2024 (Invited) X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
  
  E. Yagyu, Mitsubishi Electric Corporation
  
  D. Tsunami, Mitsubishi Electric Corporation
  
  T. Matsuura, Mitsubishi Electric Corporation
  
  T. Furuhata, Mitsubishi Electric Corporation
  
  M. Nakamura, Mitsubishi Electric Corporation
  
  T. Matsuda, Mitsubishi Electric Corporation
  
  K. Kuwata, Mitsubishi Electric Corporation
  
  T. Kobayashi, Furuno Electric Co. Ltd.
  
  2.2.2.2024 X-band GaN HEMT and Free-standing GaN Substrate for Marine Radar
Yamada, M.

SHIN-ETSU CHEMICAL Co., Ltd
- 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
  
  C. Basceri, Qromis, Inc.
  
  V. Odnoblyudov, Qromis, inc.
  
  C. Kurth, Qromis, Inc.
  
  M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
  
  S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
  
  M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
  
  C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
  
  Karen Geens, imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  H. De Pauw, CMST, imec & Ghent University
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  S. Decoutere, imec
  
  H. Hahn, AIXTRON SE
  
  M. Heuken, AIXTRON SE
  
  K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
  
  6.1.1.2024 Taking GaN to the Next Level of 100 V to 2000 V and Beyond
Yamaki, Fumikazu

Sumitomo Electric Device Innovations, Inc.
- 8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
  
  T. Yoshida, Sumitomo Electric Devices Innovations, Inc.
  
  Y. Mekata, Sumitomo Electric Device Innovations, Inc.
  
  S. Nishizawa, Sumitomo Electric Device Innovations, Inc
  
  Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.
  
  8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
Yamasaki, S.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Yan, D.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Yang, Kyunghoon

Korea Advanced Institute of Science and Technology
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
Yang, Chun-Yen

National Chi Nan University
- 12.0.11.2024 Pre-warning recognition, protective circuit, and failure analysis of red AlGaInP light emitting diodes in salty water vapor
  
  Chun-Yen Yang, National Chi Nan University
  
  You-Li Lin, National Chi Nan University
  
  Chun-Han Chen, National Chi Nan University
  
  Mao-Tung Han, National Chi Nan University
  
  Dong-sing Wuu, National Chi Nan University
  
  Yao-Wen Kuo, National Chi Nan University
  
  Yung-Hui Li, Hon Hai Research Institute
  
  Chia-Feng Lin, National Chung Hsing University
  
  Hsiang Chen, National Chi Nan University
  
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Yang, Kyounghoon

Korea Advanced Institute of Science and Technology
- 12.0.9.2024 Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
  
  Wan-Soo Park, Kyungpook National University
  
  Hyeok-Jun Lee, Kyungpook National University
  
  Hyo-Jin Kim, Kyungpook National University
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyounghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
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Yang, TzuLing

Unikorn Semiconductor
- 6.2.2.2024 (Invited) Micro LED Technology and Platform Trend
  
  Sam Chen, Unikorn Semiconductor
  
  HaoMin Ku, Unikorn Semiconductor
  
  Chingen Huang, Unikorn Semiconductor
  
  TzuLing Yang, Unikorn Semiconductor
  
  Jimmy Shen, Unikorn Semiconductor
  
  6.2.2.2024 Micro LED Technology and Platform Trend
Yazdani, Hossein

Ferdinand-Braun-Institut (FBH)
- 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs
  
  Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
  
  Hady Yacoub, Ferdinand-Braun-Institut (FBH)
  
  Amer Bassal, Ferdinand-Braun-Institut (FBH)
  
  Taylor Moule, Ferdinand-Braun-Institut (FBH)
  
  Joost Wartena, Ferdinand-Braun-Institut (FBH)
  
  Oliver Hilt, Ferdinand-Braun-Institut (FBH)
  
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Ye, Peide D.

Purdue University
- 3.2.1.2024 (Invited) Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation Frequency
  
  Adam Charnas,, Purdue University
  
  Dongqi Zheng, Purdue University
  
  Peide D. Ye, Purdue University
  
  3.2.1.2024 Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation
Yoo, J. H.

Kyungpook National University
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Yoon, Hyowon

Kumoh National Institute of Technology
- 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Soontak Kwon, KEC, Republic of Korea
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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- 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
  
  Gyuhyeok Kang, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Chaeyun Kim, Kumoh National Institute of Technology
  
  Sangyeob Kim, Kumoh National Institute of Technology
  
  Ogyun Seok, Kumoh National Institute of Technology
  
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Yoshida, S.

Sumitomo Electric Industries, Ltd.
- 2.2.1.2024 (Invited) High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz
  
  S. Yoshida, Sumitomo Electric Industries, Ltd.
  
  K. Makiyama,, Sumitomo Electric Industries, Ltd.
  
  A. Hayasaka, Sumitomo Electric Industries, Ltd.
  
  Isao Makabe, Sumitomo Electric Industries, Ltd.
  
  Ken Nakata, Sumitomo Electric Industries, Ltd.
  
  2.2.1.2024 High Power Nitrogen-polar GaNInAlN HEMT
Yoshida, T.

Sumitomo Electric Devices Innovations, Inc.
- 8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
  
  T. Yoshida, Sumitomo Electric Devices Innovations, Inc.
  
  Y. Mekata, Sumitomo Electric Device Innovations, Inc.
  
  S. Nishizawa, Sumitomo Electric Device Innovations, Inc
  
  Fumikazu Yamaki, Sumitomo Electric Device Innovations, Inc.
  
  8.1.4.2024 i-line Lithography Technology for 0.25 µm GaN-HEMTs for Future Base Station
Yu, Chien-Rong

WIN Semiconductors Corp.
- 2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
  
  Wayne Lin, WIN Semiconductors Corp
  
  Wen-Hsin Wu, WIN Semiconductors Corporation
  
  Chien-Rong Yu, WIN Semiconductors Corp.
  
  Yu-Li Ho, WIN Semiconductors Corp.
  
  Edison Chou, WIN Semiconductors Corp.
  
  Jia-Jyun Guo, WIN Semiconductors Corp.
  
  Che-Kai Lin, WIN Semiconductors Corp.
  
  Wei-Chou Wang, WIN Semiconductors Corp.
  
  Yu-Syuan Lin, WIN Semiconductors Corp.
  
  Cheng-Kao Lin, WIN Semiconductors Corp.
  
  2.2.4.2024 The 50V GaN HEMT with Memory Effect Suppression
Yu, H.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Yun, Jacob

QSI
- 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
  
  In-Geun Lee, Kyungpook National University
  
  Yong-Soo Jeon, Kyungpook National University
  
  Yonghyun Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  Hyuk-Min Kwon, QSI
  
  Seung Heon Shin, Korea Polytechnics
  
  Jae-Hak Lee, Kyungpook National University
  
  Kyunghoon Yang, Korea Advanced Institute of Science and Technology
  
  Dae-Hyun Kim, Kyungpook National University
  
  3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs
- 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
  
  J. H. Yoo, Kyungpook National University
  
  H.-B. Jo, Kyungpook National University & KETI
  
  In-Geun Lee, Kyungpook National University
  
  Su-Min Choi, Kyungpook National University
  
  H. J. Kim, Kyungpook National University
  
  W. S. Park, Kyungpook National University
  
  H. Jang, KANC
  
  C.-S. Shin, KANC
  
  K. S. Seo, KANC
  
  S. H. Shin, Polytech, Incheon
  
  H. M. Kwon, Polytech, Incheon
  
  SK Kim, QSI
  
  JG Kim, QSI
  
  Jacob Yun, QSI
  
  Ted Kim, QSI
  
  J. H. Lee, Kyungpook National University
  
  D.-H. Kim, Kyungpook National University
  
  3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
Zeeshan, M. Arif

Skyworks Solutions Inc.
- 10.2.3.2024 Leveraging Smart Factory Principles for Chemical Usage and Cost Reductions
  
  Mark J. Miller, Skyworks Solutions Inc.
  
  Joaquin Currier Cubero, Skyworks Solutions, Inc.
  
  M. Arif Zeeshan, Skyworks Solutions Inc.
  
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Zhang, Li

The Hong Kong University of Science and Technology
- 2.1.2.2024 Expanding the Scope of GaN Power Integration
  
  Kevin J. Chen, The Hong Kong University of Science and Technology
  
  Sirui Feng, The Hong Kong University of Science and Technology
  
  Tao Chen, The Hong Kong University of Science and Technology
  
  Zheyang Zheng, The Hong Kong University of Science and Technology
  
  Jin Wei, The Hong Kong University of Science and Technology
  
  Gang Lyu, The Hong Kong University of Science and Technology
  
  Li Zhang, The Hong Kong University of Science and Technology
  
  2.1.2.2024 Expanding the Scope of GaN Power Integration
Zhang, X.

Kanazawa University
- 4.1.2.2024 (Invited) Progress in Diamond MOSFET Technologies
  
  N. Tokuda, Kanazawa University
  
  T. Matsumoto, Kanazawa University
  
  X. Zhang, Kanazawa University
  
  K. Sato, Kanazawa University
  
  K. Kobayashi, Kanazawa University
  
  K. Ichikawa, Kanazawa University
  
  K. Hayashi, Kanazawa University
  
  T. Inokuma, Kanazawa University
  
  S. Yamasaki, Kanazawa University
  
  C. E. Nebel, Kanazawa University & Diamond and Carbon Applications
  
  M. Ogura, National Institute of Advanced Industrial Science and Technology
  
  H. Kato, National Institute of Advanced Industrial Science and Technology
  
  T. Makino, National Institute of Advanced Industrial Science and Technology,
  
  D. Takeuchi, National Institute of Advanced Industrial Science and Technology
  
  4.1.2.2024 Progress in Diamond MOSFET Technologies
Zhang, Y.

Imec
- 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications
  
  N. Collaert, Imec
  
  R. Alcotte, Imec
  
  A. Alian, Imec
  
  M. Asad, Imec
  
  I. Bagal, Imec
  
  S. Banerjee, imec
  
  G. Boccardi, Imec
  
  P. Cardinael, Imec and Université catholique de Louvain
  
  I. Comart, imec & Vrije Universiteit Brussels
  
  D. Desset, Imec
  
  R. ElKashlan, Imec
  
  F. Filice, Imec
  
  G. Gramegna, Imec
  
  H. Jafarpoorchekab, Imec
  
  A. Khaled, Imec
  
  A. Kumar, Imec
  
  B. Kunert, Imec
  
  Y. Mols, Imec
  
  B. O’Sullivan, Imec
  
  S. Park, Imec
  
  U. Peralagu, Imec
  
  N. Pinho, Imec
  
  A. Rathi, Imec
  
  A. Sibaja-Hernandez, Imec
  
  S. Sinha, Imec
  
  D. Smellie, Imec
  
  X. Sun, Imec
  
  A. Vais, Imec
  
  B. Vanhouche, Imec
  
  B. Vermeersch, Imec
  
  D. Xiao, Imec
  
  S. Yadav, Imec
  
  D. Yan, Imec
  
  H. Yu, Imec
  
  Y. Zhang, Imec
  
  J. Van Driessche, Imec
  
  P. Wambacq, Imec
  
  M. Peeters, Imec
  
  B. Parvais, imec & Vrije Universiteit Brussels
  
  4.2.1.2024 Silicon Meets Compound Semiconductors
Zhang, Yuxuan

Finwave Semiconductor Inc
- 4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs for highfrequency handset applications
  
  Vincent Johnson, Finwave Semiconductor Inc
  
  Zev Pogrebin, Finwave Semiconductor Inc
  
  Mark Dipsey, Finwave Semiconductor Inc
  
  Hal S. Emmer, Finwave Semiconductor Inc
  
  Yuxuan Zhang, Finwave Semiconductor Inc
  
  Dongfei Pei, Finwave Semiconductor Inc
  
  Bin Lu, Finwave Semiconductor Inc
  
  4.2.4.2024 200-mm Enhancement-mode low-knee-voltage GaN-on-Si MISFETs
Zhao, Hongping

Ohio State University
- 4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices
  
  Sushovan Dhara, Ohio State University
  
  Ashok Dheenan, Ohio State University
  
  Nathan Wriedt, Ohio State University
  
  Joe McGlone, Ohio State University
  
  Jinwoo Hwang, Ohio State University
  
  Steven Ringel, Ohio State University
  
  Hongping Zhao, Ohio State University
  
  Siddharth Rajan, Ohio State University
  
  4.1.1.2024 Electrostatic Engineering for High-Performance Gallium Oxide Devices
Zheng, Zheyang

The Hong Kong University of Science and Technology
- 2.1.2.2024 Expanding the Scope of GaN Power Integration
  
  Kevin J. Chen, The Hong Kong University of Science and Technology
  
  Sirui Feng, The Hong Kong University of Science and Technology
  
  Tao Chen, The Hong Kong University of Science and Technology
  
  Zheyang Zheng, The Hong Kong University of Science and Technology
  
  Jin Wei, The Hong Kong University of Science and Technology
  
  Gang Lyu, The Hong Kong University of Science and Technology
  
  Li Zhang, The Hong Kong University of Science and Technology
  
  2.1.2.2024 Expanding the Scope of GaN Power Integration
Zheng, Dongqi

Purdue University
- 3.2.1.2024 (Invited) Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation Frequency
  
  Adam Charnas,, Purdue University
  
  Dongqi Zheng, Purdue University
  
  Peide D. Ye, Purdue University
  
  3.2.1.2024 Ultra-thin Indium Oxide Thin-film Transistors with Gigahertz Operation
Zhu, Z.

University of Notre Dame
- 8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region IMPATT Diodes
  
  Z. Zhu, University of Notre Dame
  
  Lina Cao, Keysight Technologies
  
  Yu Duan, University of Notre Dame
  
  Wesley Turner, University of Notre Dame
  
  Jinqiao Xie, Qorvo Inc
  
  Patrick Fay, University of Notre Dame
  
  8.1.2.2024 Design, Fabrication, and Characterization of GaN-Based Single Drift Region
Zhuang, Yong-Xiang

Chang Gung University
- 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate
  
  Chong-Rong Huang, Chang Gung University
  
  Hsien-Chin Chiu, Chang Gung University
  
  Chao-Wei Chiu, Chang Gung University
  
  Hsuan-Ling Kao, Chang Gung University,
  
  Yong-Xiang Zhuang, Chang Gung University
  
  Yang-Ching Ho, Chang Gung University
  
  Chen-Kang Chuang, Chang Gung University
  
  Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
  
  Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology
  
  6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT
Zuk, P.

Transphorm Inc
- 5.0.1.2024 GaN Power: the solution that is not SiC
  
  U. K. Mishra, Transphorm Inc. & University of Santa Barbara California
  
  Davide Bisi, Transphorm Inc.
  
  Geetak Gupta, Transphorm Inc.
  
  C. J. Neufeld, Transphorm Inc
  
  R. Lal, Transphorm Inc
  
  P. Zuk, Transphorm Inc
  
  L. Shen, Transphorm Inc
  
  P. Parikh, Transphorm Inc
  
  5.0.1.2024 GaN Power the solution that is not SiC

Halhoul, Houssam

2.1.4.2024 Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents

Hwang, Jinwoo

4.1.1.2024 (Invited) Electrostatic Engineering for High-Performance Gallium Oxide Devices

Kawashimo, Atsushi

11.1.5.2024 Electron-beam Deposition with Low- Spitting Platinum Source Material Improved by New Impurity Removal Processes

Mermet-Lyaudoz, Raphael

6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?

Xiao, D.

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

Zettler, J.-T

6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

Abdallah, Zeina

10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs

Abraham, J.

12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates

Adrian, A.

6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

Ahmad, Habib

10.1.1.2024 (Invited) Semiconducting AlN: A New Rapidly Emerging III-Nitride Market

Alcotte, R.

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

Alian, A.

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

Allford, Craig

8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy

Allibert, Frédéric

6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Almeida, Carlos

11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies

Anderson, Travis J.

8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

Anjali, Anjali

11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs

Asad, M.

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

Ashraf, Huma

3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

Bagal, I.

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

Baker, Jack

8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy

Bakeroot, Benoit

6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates

Banerjee, S.

2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

Barraza, Wilmer

4.2.2.2024 Heterogeneously Integrated Compound Semiconductors on Large-Diameter Substrates for Scaling to Consumer Market Volumes

Basceri, C.

Bassal, Amer

11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs

Bathurst, L.

12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates

Becker, Tom

6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Bertoni, M.

12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates

Binetti, M.

6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

Bisi, Davide

5.0.1.2024 GaN Power: the solution that is not SiC

Black, T.

12.0.4.2024 Sonic Lift-off (SLO) to Enable Substrate Reuse of Bulk GaN and SiC Substrates

Boccardi, G.

4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

Bouhamri, Zine

6.2.1.2024 (Invited) Will microLED succeed in high volume consumer applications?

Brand, T.

6.2.3.2024 Plasma-Etch End-Pointing in InP-Based Laser Device Structures

Broda, M.

11.1.1.2024 Developments in GaAs Photolithography Processing for Improved HBT Base Metal Patterning and Reduced Photoresist Popping and Tearing

Broell, Gilet M.

7.2.1.2024 (Invited) Mass transfer of Efficient <5µm MicroLED Chips For Efficient and High Performance SmartWatch Displays

Brown, Tom

11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity