Abstract
Silicon nitride shadowed selective area growth (SNS-SAG) for homoepitaxy of GaN via RF plasma-assisted molecular beam epitaxy (PAMBE) has been shown to avoid the defects that arise from conventional selective area processing methods such as inductively coupled plasma reactive ion etching (ICP-RIE) and ion implantation. This work investigates the extension of this method to improve the heteroepitaxy of GaN on β-Ga2O3 by modifying the makeup of the SNS-SAG mask. Gallium rich and nitrogen rich GaN films are grown with SNS-SAG masks on β-Ga2O3 substrates. While current device performance has yet to be optimized, the adapted SNS-SAG mask retains both function and structural integrity as shown by scanning electron microscopy (SEM).
