3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.

Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.

Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.

Yoichi Kamada, Fujitsu Laboratories

Masaru Sato, Fujitsu Laboratories LTD.

Yoshitaka Niida, Fujitsu Laboratories LTD.

Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.

Kazukiyo Joshin, Fujitsu Laboratories Ltd.

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