May 10, 2022 // 5:30pm

4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications

Min Han, Wavice Inc.
Byoungchul Jun, Wavice Inc.
Seokgyu Choi, Wavice Inc.
Jihun Kwon, Wavice Inc.
Chulsoon choi, Wavice Inc.
Sangmin Lee, Wavice Inc.
Junhyeok Lee, Wavice Inc.,
Kyeongjae Lee, Wavice Inc.,
Hankyul Ji, Wavice Inc.,
Hogeun Lee, Wavice Inc.,


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