Abstract
-Ga2O3 and its solid solutions -(AlxGa1-x)2O3 are considered as potential candidate materials for next generation power devices due to their ultra-wide bandgaps (4.85–5.6 eV) and large breakdown electric field ( 8 MVcm-1). Wafers prepared from bulk crystals constitute a foundation in a device fabrication chain. The present report briefly discusses challenges in growing bulk crystals by different methods, crystal structural quality, wafers, and electrical properties
