Abstract
This work presents β-Ga2O3 trench Schottky barrier diodes (TSBDs) with double drift layer structures, achieving a 34% lower on-resistance compared to conventional single drift layer structures, without compromising the off-state performance. The TSBDs exhibit a breakdown voltage of ~2.4 kV, after which the devices were observed to crack along the [010] crystallographic direction in β-Ga2O3. The mechanisms behind breakdown-induced cracking were investigated including using nanoindentation, which revealed that the cracking is due to relatively weak chemical bonding along the [010] direction.
