Above 2000 V Breakdown Voltage on 2 µm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors

N. Herbecq, Institute of Electronics, Microelectronics and Nanotechnology

I. Roch-Jeune, Institute of Electronics, Microelectronics and Nanotechnology

A. Linge, Institute of Electronics, Microelectronics and Nanotechnology

M. Zegaoui, Institute of Electronics, Microelectronics and Nanotechnology

F. Medjdoub, Institute of Electronics, Microelectronics and Nanotechnology

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