Above 2000 V Breakdown Voltage on 2 µm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors

N. Herbecq, Institute of Electronics, Microelectronics and Nanotechnology
I. Roch-Jeune, Institute of Electronics, Microelectronics and Nanotechnology
A. Linge, Institute of Electronics, Microelectronics and Nanotechnology
M. Zegaoui, Institute of Electronics, Microelectronics and Nanotechnology
F. Medjdoub, Institute of Electronics, Microelectronics and Nanotechnology
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