Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETs - CS MANTECH Conference CS MANTECH Conference

Self-Aligned Refractory Metal Gate Scaling in β-Ga₂O₃ MOSFETs

Kelson Chabak, Air Force Research Laboratory, Sensors Directorate

Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

Andrew Green, Air Force Research Laboratory, Sensors Directorate

Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA

Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH

Kevin Leedy, Air Force Research Laboratory, Sensors Directorate

Donald Dorsey, Air Force Research Laboratory Materials and Manufacturing Directorate

This work characterizes the effects of gate-length (L_G) scaling in a self-aligned gate (SAG) β-Ga₂O₃ MOSFET process. Additional performance gains are expected by extending the SAG process from large L_G to sub-micrometer dimensions. This data incorporates L_G scaling down to 200 nm to improve device performance in Ga₂O₃ SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.

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