Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETs

Kelson Chabak, Air Force Research Laboratory
Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
Andrew Green, Air Force Research Laboratory
Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
Kevin Leedy, AFRL
Donald Dorsey, Air Force Research Laboratory Materials and Manufacturing Directorate

This work characterizes the effects of gate-length (LG) scaling in a self-aligned gate (SAG) β-Ga2O3 MOSFET process. Additional performance gains are expected by extending the SAG process from large LG to sub-micrometer dimensions.  This data incorporates LG scaling down to 200 nm to improve device performance in Ga2O3 SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.

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