In this study, AlGaN back barriers (B.B.) with different Al mole fractions and thicknesses were used in AlGaN/GaN high electron mobility transistors (HEMTs) to improve device performance. Relative to thickness, a proper Al mole fraction (Al0.08GaN) of the B.B. more strongly affected the device’ Ion/Ioff ratio. It exhibited a low leakage current and high Ion/Ioff ratio of approximately 106. Relative to B.B. mole fraction, B.B. thickness more greatly affected the devices’ horizontal breakdown voltage (760V) and LFN characteristics. Increasing the Al mole fraction and the thickness of the B.B. more strongly affected the dynamic RON. The current gain cut-off frequency (fT) and maximum stable gain cut-off frequency (fmax) were 5.2 GHz and 10.5 GHz, respectively, for the Al0.08GaN B.B. device.
Chang Gung University
The Impact of AlxGa1-xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-inch MCZ Si SubstrateYen-Lun HuangHsien-Chin Chiu, Chang Gung UniversityH.Y. Wang, Chang Gung UniversityChia-Hao Liu, Chang Gung UniversityChong-Rong Huang, Chang Gung UniversityChao-Wei Chiu, Chang Gung UniversityWEN-CHING HSUCHE-MING LIUCHIH-YUAN CHUANGJIA-ZHE LIUDownload Paper
8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer DesignHsiang-Chun Wang, Chang Gung UniversityHsien-Chin Chiu, Chang Gung UniversityHsuan-Ling Kao, Chang Gung UniversityDownload Paper
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