Metal–insulator–semiconductor p-type GaN high-electron-mobility transistor with an Al2O3/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al2O3/AlN layer was processed for comparison. Due to the Al2O3/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a good-quality Al2O3/AlN layer can achieve an enhancement-mode operation with superior stability and high gate swing region.
Chang Gung University
High Gate Voltage Swing Region of Normally-off p-GaN MIS-HEMT With ALD-Growth Al2O3/AlN Gate Insulator LayerJin-Ping Ao, The University of TokushimaHsien-Chin Chiu, Chang Gung UniversityChi-Chuan Chiu, Chang Gung UniversityChao-wei Chiu, Chang Gung UniversityChia-Hao Liu, Chang Gung UniversityDownload Paper
May 10, 2022 // 3:20pm
18.16 Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrateChia-Hao Liu, Chang Gung UniversityHsien-Chin Chiu, Chang Gung UniversityHsiang-Chun Wang, Chang Gung UniversityChong Rong Haung, Chang Gung UniversityDownload Paper