Hsuan-Ling Kao

Chang Gung University,
  • 5.6.2021 High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6- inch N-doped Low Resistivity SiC Substrate

    Yu-Chun Huang, Chang Gung University,
    Hsuan-Ling Kao, Chang Gung University,
    Si-Wen Chen, Chang Gung University,
  • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

    Ming Chin Chen, Unikorn Semiconductor Corporation
    Chia Cheng Liu, Unikorn Semiconductor Corporation
    Vladimir Odnoblyudov, Qromis, Inc.
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  • 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

    Hsiang-Chun Wang, Chang Gung University
    Hsien-Chin Chiu, Chang Gung University
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  • 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

    Hsiang Chun Wang, Chang Gung University,
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  • 14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer