GaN is a promising material for more efficient high frequency and high voltage power switching. However, GaN still is not the common material for power electronics due to immature substrate, homoepitaxial growth, and processing technology. Electroluminescence is a promising method to predict failure points due to high field stress, which can assist in the separation of inherent defects stemming from substrate quality, and from process-induced defects as well as identify problems related to proper edge termination design. In this work, we compare the Electroluminescence signatures of devices on inhomogeneous substrates to DC I-V behavior to demonstrate the utility of the technique for process monitoring.
Karl Hobart
Naval Research Laboratory
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Exploring the capability of Hyperspectral Electroluminescence for process monitoring in vertical GaN devices
Karl Hobart, Naval Research LaboratoryMona Ebrish, NRC Postdoctoral Fellow Residing at NRLTravis Anderson, Naval Research LaboratoryJames Gallagher, ASEE Postdoctoral Fellow Residing at NRLJoseph Spencer, Virginia TechJennifer Hite, Naval Research LaboratoryMichael Mastro, Naval Research LaboratoryDownload Paper -
13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma
Download PaperMarko Tadjer, Naval Research LaboratoryLunet Luna, U.S. Naval Research LaboratoryEugene Imhoff, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates
Download PaperKarl Hobart, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryAnindya Nath, George Mason UniversityJennifer Hite, U.S. Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryFritz Kub, Naval Research LaboratoryOzgur Aktas, QROMIS, USAVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USA -
18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage
Download PaperAndrew Koehler, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs
Download PaperTravis Anderson, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryDavid Shahin, University of MarylandMarko Tadjer, Naval Research LaboratoryLunet Luna, U.S. Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFrancis Kub, U.S. Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research Laboratory -
20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems
Download PaperDavid Shahin, University of MarylandTravis Anderson, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryLunet Luna, U.S. Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryFritz Kub, Naval Research LaboratoryAris Christou, University of Maryland-College Park -
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Download PaperMarko Tadjer, Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices
Download PaperJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryBoris Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFrancis Kub, U.S. Naval Research Laboratory -
10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs
Download PaperDavid Shahin, University of MarylandTravis Anderson, Naval Research LaboratoryJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryTatyana Feygelson, Naval Research LaboratoryBradford Pate, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryFrancis Kub, U.S. Naval Research LaboratoryAris Christou, University of Maryland-College Park -
11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs
Download PaperAndrew Koehler, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryBradley Weaver, U.S. Naval Research LaboratoryJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryDavid Shahin, University of MarylandKarl Hobart, Naval Research LaboratoryFrancis Kub, U.S. Naval Research Laboratory -
11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD
Download PaperMarko Tadjer, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory