Kazukiyo Joshin

Fujitsu Laboratories Ltd.
  • 5.1 Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding

    Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Yuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Motonobu Sato, Fujitsu Laboratories Ltd.
    Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Junji Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Kazukiyo Joshin, Fujitsu Laboratories Ltd.
    Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Download Paper
  • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

    Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Yoichi Kamada, Fujitsu Laboratories
    Masaru Sato, Fujitsu Laboratories LTD.
    Yoshitaka Niida, Fujitsu Laboratories LTD.
    Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Kazukiyo Joshin, Fujitsu Laboratories Ltd.
    Download Paper