A nanoindentation induced blistering method has been used to extract the GaN/diamond interfacial toughness (adhesion energy) from four types of GaN-on-diamond samples with varying SiNx interlayer thicknesses. The mode I energy release rate (GIC) was quantified and is presented. Additionally, transient thermoreflectance has been used to measure the thermal boundary resistance (TBR) between the GaN and the diamond substrate. It was found that a thin SiNx interlayer resulted in a lower TBR (15 m2 K GW-1) whilst maintaining a reasonable interfacial toughness (1.4±0.5 J m-2). For interlayers of a similar thickness, samples with a high interfacial toughness and high residual stresses in the GaN had a smaller TBR. This indicates that the intrinsic interfacial characteristics that enhanced the interfacial toughness could be beneficial in improving the TBR.
Matin Kuball
University of Bristol, Bristol, UK,
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GaN-on-diamond: the correlation between interfacial toughness and thermal resistance
Daniel Francis, Akash Systems, San Francisco, CA, USADaniel Field, University of BristolCaho Yuan, University of BristolRoland Simon, Thermap SolutionsDaniel Twitchen, Element Six TechnologiesFirooz Faili, Element Six Technologies, Santa Clara, CADong Liu, University of Oxford, University of BristolMatin Kuball, University of Bristol, Bristol, UK,Download Paper -
May 12, 2022 // 3:20pm
18.12 GaN-on-Si Membranes for Power Device Applications: Stress Evolution throughout Fabrication
Download PaperJerome Cuenca, Cardiff University, Cardiff, UKOliver Williams, Cardiff University, Cardiff, UKMatin Kuball, University of Bristol, Bristol, UK, -
May 11, 2022 // 5:30pm
12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices
Download PaperZeina Abdallah, University of Bristol, Bristol, UKNathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force AcademnyMatin Kuball, University of Bristol, Bristol, UK,James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK -
May 12, 2022 // 11:30am
14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
Download PaperHyun-Seop Kim, University of Bristol, Bristol, UKHassan Hirshy, IQE, Cardiff, UKAndrew Withey, Nexperia Newport Wafer Fab, Newport, UKRobert Harper, Compound Semiconductor Centre, Cardiff, UKSam Evans, Nexperia Newport Wafer Fab, Newport, UKMatin Kuball, University of Bristol, Bristol, UK,Michael J Uren, University of Bristol, Bristol, UK