Matin Kuball

University of Bristol, Bristol, UK,
  • GaN-on-diamond: the correlation between interfacial toughness and thermal resistance

    Daniel Francis, Element Six Technologies
    Daniel Field, University of Bristol
    Caho Yuan, University of Bristol
    Roland Simon, Thermap Solutions
    Daniel Twitchen, Element Six Technologies
    Firooz Faili, Element Six Technologies, Santa Clara, CA
    Dong Liu, University of Oxford, University of Bristol
    Matin Kuball, University of Bristol, Bristol, UK,

    A nanoindentation induced blistering method has been used to extract the GaN/diamond interfacial toughness (adhesion energy) from four types of GaN-on-diamond samples with varying SiNx interlayer thicknesses. The mode I energy release rate (GIC) was quantified and is presented. Additionally, transient thermoreflectance has been used to measure the thermal boundary resistance (TBR) between the GaN and the diamond substrate. It was found that a thin SiNx interlayer resulted in a lower TBR (15 m2 K GW-1) whilst maintaining a reasonable interfacial toughness (1.4±0.5 J m-2). For interlayers of a similar thickness, samples with a high interfacial toughness and high residual stresses in the GaN had a smaller TBR. This indicates that the intrinsic interfacial characteristics that enhanced the interfacial toughness could be beneficial in improving the TBR.

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  • May 12, 2022 // 3:20pm

    18.12 GaN-on-Si Membranes for Power Device Applications: Stress Evolution throughout Fabrication

    Jerome Cuenca, Cardiff University, Cardiff, UK
    Oliver Williams, Cardiff University, Cardiff, UK
    Matin Kuball, University of Bristol, Bristol, UK,

    Abstract

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  • May 11, 2022 // 5:30pm

    12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices

    Zeina Abdallah, University of Bristol, Bristol, UK
    Nathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force Academny
    Matin Kuball, University of Bristol, Bristol, UK,
    James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK

    Abstract

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  • May 12, 2022 // 11:30am

    14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness

    Hyun-Seop Kim, University of Bristol, Bristol, UK
    Hassan Hirshy, IQE, Cardiff, UK
    Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
    Robert Harper, Compound Semiconductor Centre, Cardiff, UK
    Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
    Matin Kuball, University of Bristol, Bristol, UK,
    Michael J Uren, University of Bristol, Bristol, UK

    Abstract

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