P. C. Chao

MEC, BAE Systems, IQE

  • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

    R. Isaak, MEC, BAE Systems, IQE
    J. Diaz, MEC, BAE Systems, IQE
    M. Gerlach, MEC, BAE Systems, IQE
    J. Hulse, MEC, BAE Systems, IQE
    L. Schlesinger, MEC, BAE Systems, IQE
    P. Seekell, MEC, BAE Systems, IQE
    W. Zhu, MEC, BAE Systems, IQE
    W. Kopp, MEC, BAE Systems, IQE
    X. Yang, MEC, BAE Systems, IQE
    A. Stewart, MEC, BAE Systems, IQE
    K. Chu, MEC, BAE Systems, IQE
    P. C. Chao, MEC, BAE Systems, IQE
    X. Gao, MEC, BAE Systems, IQE
    M. Pan, MEC, BAE Systems, IQE
    D. Gorka, MEC, BAE Systems, IQE
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  • A New High Power GaN HEMT with Low Temperature Bonded Diamond Substrate Technology

    P. C. Chao, MEC, BAE Systems, IQE
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  • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

    Carlton Creamer, BAE Systems Inc
    P. C. Chao, MEC, BAE Systems, IQE
    K K Chu, BAE Systems
    A Kassinos, BAE Systems
    G Campbell, Science Research Laboratories, Inc.
    H Eppich, Science Research Laboratories, Inc.
    A Shooshtari, University of Maryland
    S Dessiatoun, University of Maryland
    M Ohadi, University of Maryland
    C McGray, Modern Microsystems
    R Kallaher, Modern Microsystems
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