This work describes an on-going effort to develop and mature a 140 nm GaN MMIC technology with a focus on efficient power amplification at frequencies ranging from DC to 50 GHz and a 90 nm technology targeted towards V- and W-band applications, and then release the technologies within a foundry process that is open to the DoD community.
BAE Systems Inc
140 nm and 90 nm GaN MMIC Technology for Millimeter-wave Power ApplicationsJose Diaz, BAE Systems IncDavid Brown, HRL Laboratories, LLC.Carlton Creamer, BAE Systems IncKanin Chu, BAE Systems IncRichard Isaak, BAE Systems IncLouis Mt. Pleasant, BAE Systems IncDonald Mitchell, BAE Systems IncPuneet Srivastava, BAE Systems IncWen Zhu, BAE Systems IncHong Lu, BAE Systems IncDownload Paper
3.5.2023 Transfer and Implementation of AFRL 140nm Technology on 6-in GaN on SiCWen Zhu, BAE Systems IncDavid Brown, HRL Laboratories, LLC.Puneet Srivastava, BAE Systems IncKanin Chu, BAE Systems Inc