Travis Anderson

Naval Research Laboratory
  • Predicting Vertical GaN Diode Quality using Long Range Optical tests on Substrates

    Francis Kub, U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Mona Ebrish, National Research Council Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    Michael Mastro, U.S. Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl Holbart, U.S. Naval Research Laboratory

    It is well known that vertical GaN devices could surpass current lateral GaN switch technology due to higher critical electric fields and higher breakdown voltages from its different geometry, and lower impurity concentration from the superior quality of homoepitaxial films. However, the inconsistency of GaN substrate properties, both within wafer and vendor-to-vendor, makes reliable device fabrication difficult. Here we implement long-range spectroscopic studies of GaN substrates and epitaxial wafers using Raman, photoluminescence, and optical profilometry to assess incoming material and correlate to electrical performance of vertical diodes. We have classified incoming wafers into two general types, and determined that inhomogeneities in the wafers can negatively affect the reverse leakage current of PiN diodes.

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  • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

    Marko Tadjer, Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Eugene Imhoff, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
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  • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

    Karl Hobart, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Anindya Nath, George Mason University
    Jennifer Hite, U.S. Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Ozgur Aktas, Qromis, Inc.
    Vladimir Odnoblyudov, QROMIS, Inc.
    Cem Basceri, QROMIS, Inc.
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  • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

    Andrew Koehler, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Marko Tadjer, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
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  • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

    Travis Anderson, Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    David Shahin, University of Maryland
    Marko Tadjer, Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
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  • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

    David Shahin, University of Maryland
    Travis Anderson, Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    Marko Tadjer, Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Aris Christou, University of Maryland-College Park
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  • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

    Marko Tadjer, Naval Research Laboratory
    Peter Raad, TMX Scientific and Southern Methodist University
    Tatyana Feygelson, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
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  • 8a.3 Epitaxial Lift-off and Transfer of III-N Materials and Devices from SiC

    David Meyer, US Naval Research Laboratory
    Brian Downey, US Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    D. Scott Katzer, Naval Research Laboratory
    Neeraj Nepal, US Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    David Storm, US Naval Research Laboratory
    Matthew Hardy, US Naval Research Laboratory
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  • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Boris Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
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  • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

    David Shahin, University of Maryland
    Travis Anderson, Naval Research Laboratory
    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    Marko Tadjer, Naval Research Laboratory
    Tatyana Feygelson, Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
    Aris Christou, University of Maryland-College Park
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  • 11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs

    Andrew Koehler, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Marko Tadjer, Naval Research Laboratory
    Bradley Weaver, U.S. Naval Research Laboratory
    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    David Shahin, University of Maryland
    Karl Hobart, Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
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  • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

    Marko Tadjer, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
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