The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs - CS MANTECH Conference CS MANTECH Conference

The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

Neung-Hee Lee, Seoul National University

Woojin Choi, Seoul National University

Minseong Lee, Seoul National University

Seonhong Choi, Seoul National University

Download Paper