Yoshiki Yabuhara
Sumitomo Electric Industries, Ltd, Itami
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14.6 Development of Si-doped 8-inch GaAs substrates
Masanori Morishita, Sumiden Semiconductor Materials Co., Ltd, KobeHidetoshi Takayama, Sumiden Semiconductor Materials Co., Ltd, KobeShuichi Kaneko, Sumiden Semiconductor Materials Co., Ltd, KobeHirokazu Ota, Sumiden Semiconductor Materials Co., Ltd, KobeTatsuya Moriwake, Sumiden Semiconductor Materials Co., Ltd, KobeSatoshi Horikawa, Sumitomo Electric Industries, Ltd, ItamiKouji Morishige, Sumitomo Electric Industries, Ltd, ItamiYoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami -
5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate
Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, LtdKazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, ItamiYoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami