12.19 Multimodal micro-spectroscopy study of red-green-blue InGaN quantum wells for efficient white lighting

K. Nicholson 1) , R. Alshammary 1) , N. Zarrabi 2) , S. Wood 2) , Z. Zhou 3) , S. Robertson 3) , T. Wang 1) , N. Gunasekar 1)

1) School of Physics and Astronomy, Cardiff University, Cardiff, Wales, UK
2) National Physical Laboratory (NPL), Middlesex, England, UK
3) Loughborough Materials Characterization Centre, Loughborough University, Loughborough, England, UK

12.1 Effect of Deposition Conditions in EBeam Evaporation on Low-Resistance Ohmic Contact and Its Film Structure on GaAs Diodes and GaN HEMTs

Pradeep Waduge
MACOM Technology, Durham, NC, USA

12.10 Recessed Selective Area Growth of GaN-on-Ga2O3 Enabled by Ga-Flux Etching

Garrett R. Czajkowski 1) , Frank P. Kelly 2) 3), Kyekyoon (Kevin) Kim1) 2)

1) Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
2) Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
3) U.S. Naval Research Laboratory, Washington, D.C., USA