Abstract
Both AlN and Ga2O3 have been ardently pursued lately as the upcoming semiconductors after GaN and SiC as the industry has been expanding rapidly on the high-volume manufacturing of GaN and SiC based technologies, including 12-inch GaN-on-Si, 8-inch SiC substrates and processing foundries etc. What are the unique advantages and challenges associated with AlN and Ga2O3? What are the notable breakthrough results in these two material systems? In this talk, I will present the findings of our research group on these topics in the past decade and reflect on the future.