10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

Fumimasa Horikiri, Sciocs Company Limited
Yoshinobu Narita, Sciocs Company Limited
Takehiro Yoshida, Sciocs Company Limited
Hiroshi Ohta, Hosei University
Tomoyoshi Mishima, Hosei University
Tohru Nakamura, Hosei University
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