12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer
Sen Huang*, Student Presentation
, Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Shiping Guo, IQE RF LLC
Junfeng Li, Chinese Academy of Sciences
Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
