12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science

Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences

Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Shiping Guo, IQE RF LLC

Junfeng Li, Chinese Academy of Sciences

Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences

Chao Zhao, Chinese Academy of Sciences

Jinjuan Xiang

Shumin Chai

Yankui Li

Download Paper