This paper presents Indium Tin Oxide (ITO) films developed using a pulsed DC off-axis sputtering chamber on 300mm substrates to obtain transparent-ohmic contact for pGaN. Film optoelectrical and microstructure properties were investigated per comparison for different deposition techniques such as single ITO target, alloy by co-deposition from two targets (In2O3 and SnO2) and for stacks including different interfacial layers, such as In-rich ITO and Ni. A ranking of the specific contact resistivity of all the films was determined after integration on Transmission Line Method (TLM) devices. A correlation of the specific contact resistivity with film first layer’s texture dependent on film process, thickness and material was observed.
