14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods - CS MANTECH Conference CS MANTECH Conference

14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods

Billy Lai, Hong Kong University of Science and Technology

Qiang Li, Hong Kong University of Science and Technology

Kei May Lau, Hong Kong University of Science and Technology

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