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14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
C. Chen, Momentive Technologies
Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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