16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

Karl D. Hobart, U.S. Naval Research Laboratory

Andrew Koehler, U. S. Naval Research Laboratory

Anindya Nath, George Mason University

Jennifer Hite, U.S. Naval Research Laboratory

N. Mahadik, U.S. Naval Research Laboratory

Fritz Kub, Naval Research Laboratory

Ozgur Aktas, QROMIS, USA

Vladimir Odnoblyudov, QROMIS, USA

Cem Basceri, QROMIS, USA

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