16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

Karl D. Hobart, U.S. Naval Research Laboratory
Andrew Koehler, U. S. Naval Research Laboratory
Anindya Nath, George Mason University
Jennifer Hite, U.S. Naval Research Laboratory
N. Mahadik, U.S. Naval Research Laboratory
Fritz Kub, Naval Research Laboratory
Ozgur Aktas, QROMIS, USA
Vladimir Odnoblyudov, QROMIS, USA
Cem Basceri, QROMIS, USA
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