May 02, 2019 // 3:40pm – 4:30pm

18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

Sandra Riedmüller, United Monolithic Semiconductors GmbH
Jan Grünenpütt, United Monolithic Semiconductors France
Manfred Madel, United Monolithic Semiconductors GmbH
Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
Hervé Blanck, United Monolithic Semiconductors
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