May 02, 2019 // 3:40pm – 4:30pm

18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
Bo Zhang, University of Electronic Science and Technology of China
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