18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage - CS MANTECH Conference CS MANTECH Conference

18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

Andrew Koehler, Naval Research Laboratory

Marko Tadjer, U.S. Naval Research Laboratory

Karl D. Hobart, U.S. Naval Research Laboratory

Fritz Kub, Naval Research Laboratory

Download Paper