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18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage
Andrew Koehler, U. S. Naval Research Laboratory
Marko Tadjer, U.S. Naval Research Laboratory
Karl D. Hobart, U.S. Naval Research Laboratory
Fritz Kub, Naval Research Laboratory
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