May 02, 2019 // 3:40pm – 4:30pm

18.9 High Thermally Stable AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Bulk Semi-Insulating GaN Substrates

Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
Hao-Chung Kuo, National Chiao-Tung University
Sung-Wen Huang, National Chiao-Tung University
Xinke Liu, N/A
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