20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

Huaxing Jiang, Hong Kong University of Science and Technology
Chao Liu, Hong Kong University of Science and Technology
Yuying Chen, Hong Kong University of Science and Technology
Chak Wah Tang, Hong Kong University of Science and Technology
Kei May Lau, Hong Kong University of Science and Technology
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