3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Theodore Kennedy, Raytheon IDS
Lovelace Soirez, Novati
John Bettencourt, Raytheon IDS
Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
William Davis
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