3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

Theodore Kennedy, Raytheon IDS

Lovelace Soirez, Novati

John Bettencourt, Raytheon IDS

Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

William Davis

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