Abstract
Gallium Nitride (GaN) and Silicon Carbide (SiC) are rapidly being adopted over traditional silicon MOSFETs in the realm of high-power applications. In this paper, we discuss both these emerging technologies, their use in hard- and soft-switching applications and advances in the coming years. We will discuss the properties of e-mode/d-mode GaN and SiC, explore their advantages in high-power applications, and compare efficiency and power losses in OBC applications.
