Abstract
The resurgence of patent litigation in the gallium nitride (GaN) space marks the beginning of a new global conflict, this time centered on GaN power transistors rather than LEDs. This talk traces the unfolding legal battles among key players in this nascent market—EPC, Innoscience, and Infineon—highlighting a complex, multi-jurisdictional struggle with significant commercial stakes. Drawing parallels to the GaN LED patent wars 25 years ago, the analysis underscores how strategic patent enforcement, venue selection, and global coordination are once again shaping the competitive landscape. With litigation now reaching courts and agencies across the U.S., Europe, and China, this paper argues that intellectual property has become a decisive factor in market positioning and survival within the fast-growing GaN power device industry.
