4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

Jinhan Zhang, University of Electronic Science and Technology of China
Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
Yijun Shi, University of Electronic Science and Technology of China
Qi Zhou, University of Electronic Science and Technology of China
Wanjun Chen, University of Electronic Science and Technology of China
Bo Zhang, University of Electronic Science and Technology of China
Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
Download Paper