Abstract
We developed high-power and high-reliability quaternary InAlGaN/GaN HEMTs via TCVD SiNx passivation. This passivation technique achieves lower sheet resistance and higher-voltage operation for an InAlGaN/GaN HEMT compared with PECVD SiNx passivation. Moreover, it yields a record-high output power density of 31.0 W/mm in the X-band. Furthermore, we demonstrated that the InAlGaN/GaN HEMT with TCVD SiNx passivation is highly reliable.
