5.2.2021 Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

Wen-Hsin Wu, WIN Semiconductors Corporation
Yong-Han Lin, WIN Semiconductors Corporation
Che-Kai Lin, WIN Semiconductors Corporation
Fan-Hsiu Huang, WIN Semiconductors Corporation
Wei-Chou Wang, WIN Semiconductors Corporation
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