Abstract
We present an overview of the solutions developed at imec for the manufacture of compound semiconductors in a CMOS-compatible process scalable to 300mm wafer size. Pioneering GaN-on-Si for more than a decade for power electronics, operation at 1200V is now possible. We demonstrate that GaN-on-Si can also achieve state-of-the art performance for 5G/6G wireless applications, both for base stations and user’s equipment. Cutting-edge InP-on-Silicon solutions are proposed for higher data rate wireless communication systems. A Si photonics platform including integrated light sources is proposed as a solution to the interconnect wall which constraints AI systems. The role of engineered substrates is discussed.
